fz2400r33he4 - low vce,sat - high dc stability = 150°c

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features• Electrical features

- VCES = 3300 V- IC nom = 2400 A / ICRM = 4800 A- High current density- High DC stability- High short-circuit capability- Low switching losses- Low VCE,sat

- Tvj,op = 150°C- Trench IGBT 4- Unbeatable robustness- VCE,sat with positive temperature coefficient- Low Qg and Cres

• Mechanical features- AlSiC base plate for increased thermal cycling capability- High power density- Isolated base plate- Package with CTI > 600- RoHS compliant

Potential applications• High-power converters• Medium-voltage converters• Motor drives• Traction drives• UPS systems• Active frontend (energy recovery)• Commercial agriculture vehiclesProduct validation• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068Description

FZ2400R33HE4IHM-B module

Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.10www.infineon.com 2021-10-15

https://www.infineon.com

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

FZ2400R33HE4IHM-B moduleTable of contents

Datasheet 2 Revision 1.102021-10-15

1 Package

Table 1 Insulation coordination

Parameter Symbol Note or test condition Values Unit

Isolation test voltage VISOL RMS, f = 50 Hz 6.0 kV

Partial discharge extinctionvoltage

Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV

DC stability VCE(D) Tvj=25°C, 100 Fit 2100 V

Material of modulebaseplate

AlSiC

Creepage distance dCreep terminal to heatsink 32.2 mm

Clearance dClear terminal to heatsink 19.1 mm

Comparative tracking index CTI > 600

Table 2 Characteristic values


Min. Typ. Max.

Stray inductance module LsCE 6 nH

Module lead resistance,terminals - chip

RAA'+CC' TC=25°C, per switch 0.08 mΩ

Module lead resistance,terminals - chip

RCC'+EE' TC=25°C, per switch 0.095 mΩ

Storage temperature Tstg -40 150 °C

Mounting torque for modulemounting

M - Mounting according tovalid application note

M6, Screw 4.25 5.75 Nm

Terminal connection torque M - Mounting according tovalid application note

M4, Screw 1.8 2.1 Nm

M8, Screw 8 10

Weight G 1200 g

2 IGBT, Inverter

Table 3 Maximum rated values


Collector-emitter voltage VCES Tvj = -40 °C 3300 V

Tvj = 150 °C 3300

Continuous DC collectorcurrent

ICDC Tvj max = 150 °C TC = 105 °C 2400 A

Repetitive peak collectorcurrent

ICRM tP = 1 ms 4800 A

Gate-emitter peak voltage VGES ±20 V

FZ2400R33HE4IHM-B module1 Package




Min. Typ. Max.

Collector-emitter saturationvoltage

VCE sat IC = 2400 A, VGE = 15 V Tvj = 25 °C 2.40 2.65 V

Tvj = 125 °C 2.95

Tvj = 150 °C 3.10 3.25

Gate threshold voltage VGEth IC = 94 mA, VCE = VGE, Tvj = 25 °C 5.20 5.80 6.40 V

Gate charge QG VGE = ±15 V, VCE = 1800 V 40 µC

Internal gate resistor RGint Tvj = 25 °C 0.5 Ω

Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 280 nF

Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 8 nF

Collector-emitter cut-offcurrent

ICES VCE = 3300 V, VGE = 0 V Tvj = 25 °C 5 mA

Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 400 nA

Turn-on delay time(inductive load)

tdon IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGon = 0.5 Ω

Tvj = 25 °C 0.560 µs

Tvj = 125 °C 0.660

Tvj = 150 °C 0.670

Rise time (inductive load) tr IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGon = 0.5 Ω

Tvj = 25 °C 0.250 µs

Tvj = 125 °C 0.270

Tvj = 150 °C 0.290

Turn-off delay time(inductive load)

tdoff IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGoff = 3.3 Ω

Tvj = 25 °C 4.000 µs

Tvj = 125 °C 4.300

Tvj = 150 °C 4.300

Fall time (inductive load) tf IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGoff = 3.3 Ω

Tvj = 25 °C 0.540 µs

Tvj = 125 °C 1.180

Tvj = 150 °C 1.400

Turn-on time (resistive load) ton_R IC = 500 A, VCE = 2000 V,VGE = ±15 V, RGon = 0.5 Ω

Tvj = 25 °C 1.19 µs

Turn-on energy loss perpulse

Eon IC = 2400 A, VCE = 1800 V,Lσ = 85 nH, VGE = ±15 V,RGon = 0.5 Ω, di/dt =7600 A/µs (Tvj = 150 °C)

Tvj = 25 °C 2000 mJ

Tvj = 125 °C 3400

Tvj = 150 °C 3900

Turn-off energy loss perpulse

Eoff IC = 2400 A, VCE = 1800 V,Lσ = 85 nH, VGE = ±15 V,RGoff = 3.3 Ω, dv/dt =1500 V/µs (Tvj = 150 °C)

Tvj = 25 °C 3500 mJ

Tvj = 125 °C 4600

Tvj = 150 °C 4950

SC data ISC VGE ≤ 15 V, VCC = 2400 V,VCEmax=VCES-LsCE*di/dt

tP ≤ 10 µs, Tvj ≤ 150 °C

9600 A

(table continues...)

FZ2400R33HE4IHM-B module2 IGBT, Inverter


Table 4 (continued) Characteristic values


Min. Typ. Max.

Thermal resistance, junctionto case

RthJC per IGBT 5.50 K/kW

Thermal resistance, case toheat sink

RthCH per IGBT, λgrease= 1 W/(m*K) 4.30 K/kW

Temperature underswitching conditions

Tvj op -40 150 °C

3 Diode, Inverter

Table 5 Maximum rated values


Repetitive peak reversevoltage

VRRM Tvj = -40 °C 3300 V

Tvj = 150 °C 3300

Continuous DC forwardcurrent

IF 2400 A

Repetitive peak forwardcurrent

IFRM tP = 1 ms 4800 A

I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 1230 kA²s

Tvj = 150 °C 1110

Maximum power dissipation PRQM Tvj = 150 °C 5400 kW

Minimum turn-on time tonmin 10 µs



Min. Typ. Max.

Forward voltage VF IF = 2400 A, VGE = 0 V Tvj = 25 °C 2.90 3.30 V

Tvj = 125 °C 2.60

Tvj = 150 °C 2.50 2.80

Peak reverse recoverycurrent

IRM VR = 1800 V, IF = 2400 A,VGE = -15 V, -diF/dt =7600 A/µs (Tvj = 150 °C)

Tvj = 25 °C 2440 A

Tvj = 125 °C 2820

Tvj = 150 °C 2880

Recovered charge Qr VR = 1800 V, IF = 2400 A,VGE = -15 V, -diF/dt =7600 A/µs (Tvj = 150 °C)

Tvj = 25 °C 1100 µC

Tvj = 125 °C 2100

Tvj = 150 °C 2500 (table continues...)

FZ2400R33HE4IHM-B module3 Diode, Inverter


Table 6 (continued) Characteristic values


Min. Typ. Max.

Reverse recovery energy Erec VR = 1800 V, IF = 2400 A,VGE = -15 V, -diF/dt =7600 A/µs (Tvj = 150 °C)

Tvj = 25 °C 1480 mJ

Tvj = 125 °C 2750

Tvj = 150 °C 3200

Thermal resistance, junctionto case

RthJC per diode 10.6 K/kW

Thermal resistance, case toheat sink

RthCH per diode, λgrease= 1 W/(m*K) 5.10 K/kW

Temperature underswitching conditions

Tvj op -40 150 °C

FZ2400R33HE4IHM-B module3 Diode, Inverter


4 Characteristics diagrams

output characteristic (typical), IGBT, InverterIC = f(VCE)VGE = 15 V

output characteristic (typical), IGBT, InverterIC = f(VCE)Tvj = 150 °C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

400

800

1200

1600

2000

2400

2800

3200

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4800

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

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800

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1600

2000

2400

2800

3200

3600

4000

4400

4800

transfer characteristic (typical), IGBT, InverterIC = f(VGE)VCE = 20 V

switching losses (typical), IGBT, InverterE = f(IC)RGoff = 3.3 Ω, RGon = 0.5 Ω, VCE = 1800 V, VGE = ± 15 V

5 6 7 8 9 10 11 12 130

400

800

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4800

0 600 1200 1800 2400 3000 3600 4200 48000

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FZ2400R33HE4IHM-B module4 Characteristics diagrams


switching losses (typical), IGBT, InverterE = f(RG)IC = 2400 A, VCE = 1800 V, VGE = ± 15 V

switching times (typical), IGBT, Invertert = f(IC)RGoff = 3.3 Ω, RGon = 0.5 Ω, VCE = 1800 V, VGE = ± 15 V, Tvj =125 °C

0 1 2 3 4 5 60

2000

4000

6000

8000

10000

12000

14000

16000

18000

0 600 1200 1800 2400 3000 3600 4200 48000.01

0.1

1

10

switching times (typical), IGBT, Invertert = f(RG)IC = 2400 A, VCE = 1800 V, VGE = ± 15 V, Tvj = 125 °C

transient thermal impedance , IGBT, InverterZth = f(t)

0 1 2 3 4 5 60.1

1

10

0.001 0.01 0.1 1 100.01

0.1

1

10



reverse bias safe operating area (RBSOA), IGBT,InverterIC = f(VCE)RGoff = 3.3 Ω, VGE = 15 V, Tvj = 150 °C

capacity characteristic (typical), IGBT, InverterC = f(VCE)f = 100 kHz, VGE = 0 V, Tvj = 25 °C

0 500 1000 1500 2000 2500 3000 35000

600

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1800

2400

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3600

4200

4800

5400

6000

0.1 1 10 1000

100

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300

400

500

gate charge characteristic (typical), IGBT, InverterVGE = f(QG)IC = 2400 A, Tvj = 25 °C

forward characteristic of (typical), Diode, InverterIF = f(VF)

0 4 8 12 16 20 24 28 32 36 40-15

-13

-11

-9

-7

-5

-3

-1

1

3

5

7

9

11

13

15

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.00

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4400

4800



switching losses (typical), Diode, InverterErec = f(IF)VCE = 1800 V, RGon = RGon(IGBT)

switching losses (typical), Diode, InverterErec = f(RG)VCE = 1800 V, IF = 2400 A

0 600 1200 1800 2400 3000 3600 4200 48000

500

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3500

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0 1 2 3 4 5 60

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transient thermal impedance , Diode, InverterZth = f(t)

safe operation area (SOA), Diode, InverterIR = f(VR)Tvj = 150 °C

0.001 0.01 0.1 1 100.1

1

10

100

0 500 1000 1500 2000 2500 3000 35000

600

1200

1800

2400

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5400



5 Circuit diagram

Figure 1

6 Package outlines

Figure 2

FZ2400R33HE4IHM-B module5 Circuit diagram


7 Module label code

2

Module label code

Code format Data Matrix Barcode Code128

Encoding ASCII text Code Set A

Symbol size 16x16 23 digits

Standard IEC24720 and IEC16022 IEC8859-1

Code content ContentModule serial numberModule material numberProduction order numberDate code (production year)Date code (production week)

Digit1 – 56 - 1112 - 1920 – 2122 – 23

Example71549142846550549911530

Example

7154914284655054991153071549142846550549911530

Figure 3

FZ2400R33HE4IHM-B module7 Module label code


Revision historyDocument revision Date of release Description of changes

1.00 2021-03-25

1.10 2021-10-15 Final datasheet

FZ2400R33HE4IHM-B moduleRevision history


TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-10-15Published byInfineon Technologies AG81726 Munich, Germany © 2021 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-ABA409-002

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”).With respect to any examples, hints or any typicalvalues stated herein and/or any information regardingthe application of the product, Infineon Technologieshereby disclaims any and all warranties and liabilitiesof any kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

Please note that this product is not qualifiedaccording to the AEC Q100 or AEC Q101 documentsof the Automotive Electronics Council.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury.

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fz2400r33he4 - low vce,sat - high dc stability = 150°c

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