g. bertuccio “challenges in the design of front-end electronics for semiconductor radiation...
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![Page 1: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/1.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
14th International Workshop on Room Temperature Semiconductor Detectors and Associated Electronics“, 19-22 October 2004, Rome, Italy.
Challenges in the Design of Challenges in the Design of Front-End ElectronicsFront-End Electronics
for Semiconductor Radiation Detectorsfor Semiconductor Radiation Detectors
Department of Electronics Engineering and Information Science
Milano - Italy
Giuseppe Bertuccio
Politecnico di Milano and INFN
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
The Front-End Electronics is made for a detector
Introduction
The design challenges start from the detector
Silicon Carbide Detectors
…a step forward for Front-end Electronic Design
(useful also for other detectors…)
A stimulating case…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Leakage Current DensityState of the art detectors
Si / GaAs1 nA/cm2
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Leakage Current DensityState of the art detectors
1000 SiC1 pA/cm2
Si / GaAs1 nA/cm2
![Page 5: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/5.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Leakage Current DensityState of the art detectors
Si / GaAs1 nA/cm2
SiC1 pA/cm2
1000
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SiC pixel detector: from 27 °C to 100°C
43 e- r.m.s. @ 100 °C
17 e- r.m.s. @ 27 °C
Front-End limited
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SiC Pixel Detectors
SiC Pad detectors : JSiC = 1 – 10 pA/cm2
Current of a pixel ?
VBIAS=0V; I = 0 ± 0.1 fA
IREV = 1.6 fA - 16 fA !IREV = 1.6 fA - 16 fA !Area = 400 x 400 m2
4x4 Prototype
SiC pixel
400 x 400 m2
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Pixel Leakage Current
SiC Pad detectors : JSiC = 1 – 10 pA/cm2
Current of a pixel ?
VBIAS=200V; I = 3.16 ± 0.3 fA
VBIAS=0V; I = 0 ± 0.1 fA
IREV = 2 fA - 16 fA !IREV = 2 fA - 16 fA !Area = 400 x 400 m2
4x4 Prototype
SiC pixel
400 x 400 m2
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
June 2004 : Reverse Current Map
Leakage Current @ 27 °C
I = 274 fA : 1 pixel
I = 98 fA : 1 pixel
I = 36 fA : 1 pixel
I < 10 fA : 12 pixels
Leakage Current @ 27 °C
I = 274 fA : 1 pixel
I = 98 fA : 1 pixel
I = 36 fA : 1 pixel
I < 10 fA : 12 pixels
Leakage Current E.N.C. @ 27 °C @ 10s
I = 274 fA : 1 pixel = 5.8 e-
I = 98 fA : 1 pixel = 3.5 e-
I = 36 fA : 1 pixel = 2 e-
I < 10 fA :12 pixels < 1 e- r.m.s.
Leakage Current E.N.C. @ 27 °C @ 10s
I = 274 fA : 1 pixel = 5.8 e-
I = 98 fA : 1 pixel = 3.5 e-
I = 36 fA : 1 pixel = 2 e-
I < 10 fA :12 pixels < 1 e- r.m.s.
SiC pixel
A Room Temperature
Sub-electron noise
Semiconductor Detector
SiC pixel
A Room Temperature
Sub-electron noise
Semiconductor Detector
I < 10fA : 12 pixels10 fA
I < 10fA : 12 pixels < 1 e- r.m.s.
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Is it realistic to think to a sub-electron noise room temperature Front-End Electronics ?
Is it possible sub-e-noise in standard CMOS Technology ?
If not, what is the ultimate noise limit ? 1, 2 , 5… electrons r.m.s. ?
What does set the noise limit in CMOS ? 1/f or others ?
What is the power level required to achieve the ultimate noise ?
Is this power compatible with a thousand channels pixel detectoror it is reasonable only for few channels detectors ?
Some questions…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Design toward sub-electron noise FE…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
22/1
22wpfwsTransistorInput ENCENCENCENC 22
/122
wpfwsTransistorInput ENCENCENCENC
122
TransistorInputtot ENCENC 122
TransistorInputtot ENCENC
E. Gatti, V. Radeka, P.F. Manfredi, M. Sampietro, V. Re,
A. Pullia, P. O’Connor, G. De Geronimo, G. Bertuccio …
Front End Noise
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
outline
• The classical theory and its limits
• 1/f noise : models and experiments
• Optimisation of ENC1/f
• Ultimate limit of ENC1/f
1 / f Noise
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ENC 1/f: the classical theory
fLWC
KS
ox
FV
1'
fLWC
KS
ox
FV
1'
LWC
LWCCKAENC
ox
oxILFf '
2'
22
/1
LWC
LWCCKAENC
ox
oxILFf '
2'
22
/1
Assumptions
- Sv is independent by I
- Sv scales with (WL)-1
Are these assumptions always true ?Are these assumptions always true ?
')(
ox
ILopt C
CWL '
)(ox
ILopt C
CWL
ILFET CC ILFET CC Capacitive
Matching
Capacitive
Matching
LWC
LWCC
ox
oxIL'
2' LWC
LWCC
ox
oxIL'
2'
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SV: Experimental data
PMOS 30/2 ( AMS 0.35 m )
10 A
1/f
30 A
100 A
300 A
HznVSV 50
SV/SV ~ 100 % !
fLWC
KS
ox
FV
1'
fLWC
KS
ox
FV
1'
!?
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Models of 1/f noise
Hooge model :
McWhorter modelN
Unified - correlated modelN -
vNI vNI N : carriers numbers
v : carrier velocity
Hooge model :
McWhorter modelN
Unified - correlated modelN -
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
: Hooge model
- Empirical model
- Proposed by Hooge in 1969 to explain 1/f noise in
homogeneous semiconductors (resistors)
fI
Ndf
idS H
I
122
fI
Ndf
idS H
I
122
1/f origin: fluctuations due to phonon scattering
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
: McWhorter model
- Based on a model proposed by McWhorter in 1957
- Fluctuation of number of free carriers
ftzyEffENS
T
TTTTN
21
1)(4
ftzyEffENS
T
TTTTN
21
1)(4
SiSiO2
q-
NSi
SiO2
1/f origin in MOSFET
N due to charge trapping / detrapping in SiO2
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SI vs. model
Ohmic
DST V
L
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2
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1
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2
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Saturation
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VVL
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23
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ILWfC
q
VVL
W
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TGSoxH
Subthreshold
2
'''
4 1I
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2'''
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I
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CkT oxH
3
'2
IL
W
321
ILW
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
What the experiments say…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
p –MOSFET 10/10 (Lmin= 90 nm)
Subthreshold SI I 2
Valenza et al.
IEE 2004
vs. modelsSubthreshold
2
'''
4
)(
1I
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NqS
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2
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N model (McWhorter)N model (McWhorter)
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
vs. modelsSaturation
2
3
2
)( 2 TGST
SATI VVL
W
f
NkTqS
2
3
2
)( 2 TGST
SATI VVL
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f
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)( 2 TGSoxH
SATI VVL
W
f
CqS
3TGS VV 2
TGS VV
Saturation SI (VGS - VT)3
(Hooge) model (Hooge) model
p –MOSFET 10/10 (Lmin= 90 nm)
Valenza et al.
IEE 2004
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
vs. : experimental
PMOS NMOS
ST Microelectronics 0.13 m CMOS
Marin et al. - IEE 2004
I
N - McWhorter model
ILfC
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ox
TSATI
2'
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1
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Hooge model
23
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12I
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23
3')(
12I
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ox
HSATI
23I
saturation
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
bias region Hooge – McWhorter
SUBTHRESHOLD -- PMOS & NMOS
OHMIC PMOS NMOS
SATURATION PMOS NMOS
vs. model
PMOS : deeper channel → bulk effect →
NMOS: interface channel → trapping effects → N
PMOS : deeper channel → bulk effect →
NMOS: interface channel → trapping effects → N
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Implication for Front-end designs…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
vs. ENC optimisationSaturation
ILfC
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TSATI
2'
2
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1
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1
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1
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1
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SV
SV
I
I
SV
I
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Design for N-1/f MOSFET’s…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ENC1/f : model: Saturation
fLWC
NTkqS
ox
TSATV
11
2 2'
2
)(
fLWC
NTkqS
ox
TSATV
11
2 2'
2
)(
LWC
LWCC
C
NTkAENC
ox
GIL
ox
TNf '
2'
'22
2)(/1
LWC
LWCC
C
NTkAENC
ox
GIL
ox
TNf '
2'
'22
2)(/1
• independent by I
• same for equal area WL
• minimum for CG = CIL
• independent by I
• same for equal area WL
• minimum for CG = CIL
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
pFCENC
JK
ILf
F
14
104
/1
25
pFCENC
JK
ILf
F
4.4
104
/1
26
Ultimate limit of ENC1/f
ILF
Nf Cq
KAENC 2
)(/1
2min
ILF
Nf Cq
KAENC 2
)(/1
2min
1
50 fF
3 e-
0.5 pF
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Design for - 1/f MOSFET’s…
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ILWC
LLWCC
q
AENC
ox
GILHNf
3'
2'2
)(/12
I
LWC
LLWCC
q
AENC
ox
GILHNf
3'
2'2
)(/12
model: ENC1/f
2'0min 2 thox Vn
L
WCII
2'
0min 2 thox VnL
WCII
G
GILNf C
CCENC
2
)(/1
G
GILNf C
CCENC
2
)(/1
minimum for CG = CILminimum for CG = CIL
3
2
)(/1
G
GILNf
C
CCENC
3
2
)(/1
G
GILNf
C
CCENC
minimum for CG = 3 CILminimum for CG = 3 CIL
minimum current (within saturation) minimum current (within saturation)
II II
constant current constant current
In contrastwith series white noise
minimisationI
![Page 32: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/32.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ILWC
LLWCC
q
AENC
ox
GILHf
3'
2'22
)(/12
ILWC
LLWCC
q
AENC
ox
GILHf
3'
2'22
)(/12
IW
LLWCCA
Cq
kTENC GIL
ox
SATws
1
2
42'
1
'
2)(
IW
LLWCCA
Cq
kTENC GIL
ox
SATws
1
2
42'
1
'
2)(
ENC optimisation
1/f
White
I
I
1
ENC2
I
1/fws
Iopt
CG1/fws
COPT1/3CIL 3CIL
CG = 3 CILCG = 3 CIL
CG = CIL/3CG = CIL/3
![Page 33: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/33.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ENC optimisation
101
102
103
10-6
10-4
10-22
4
6
8
10
12
Current [A] Gate width W [m]
EN
C [
elec
tron
s r.
m.s
. ]
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
Iopt = 14 A
Wopt = 183 m
ENCmin = 2.8 e- r.m.s.
Iopt = 14 A
Wopt = 183 m
ENCmin = 2.8 e- r.m.s.
14 A183
![Page 34: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/34.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Summary - Conclusions• RT detectors with sub-electron noise (SiC)
• Ultimate limit of CMOS Front End
• 1/f noise models revised McWhorter model limits
Hooge & unified models
Bias dependent 1/f noise
Bias Current / Geometry MOSFET optimisation
• ENC1/f : 1 - 3 e- r.m.s. at RT for CIL 50-500fF
• ENCtot = 3 e- r.m.s. (CIL = 0.3pF ) experimental data based
![Page 35: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/35.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Acknowlegments
Andena Marco
Caccia Stefano
Maiocchi Diego
Mallardi Enzo
Masci Sergio
Olivieri Gianluigi
Thanks to:
![Page 36: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/36.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
![Page 37: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/37.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
![Page 38: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/38.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Foxox
FV Kt
fLWC
KS
1' Fox
ox
FV Kt
fLWC
KS
1'
![Page 39: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/39.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Sub-electron noise Front End :is it interesting ?
Intrinsic detector noise
SiGaAsCdTeSiC
6
4
1 keV30 60 eV
1
![Page 40: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/40.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Parallel noise:MOSFET Gate leakage
1 nA
90 nm Technology
tox = 1.5 nmPMOS 0.3/10
IG
100 nA
ID
Valenza et al. IEE 2004
![Page 41: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/41.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ID= 20 A ID = 5 mA
AMS CMOS 0.35 m
PMOS 300/0.4
AMS CMOS 0.35 mtox = 7.6 nm
![Page 42: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/42.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
101
102
103
10-6
10-4
10-2
0
2
4
6
8
10
12
1/f ENC component
Current [A] Gate width W [m]
EN
C [
elec
tron
s r.
m.s
. ]
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
Iopt = 1 A
Wopt = 570 m
ENCmin = 1.4 e- r.m.s.
Iopt = 1 A
Wopt = 570 m
ENCmin = 1.4 e- r.m.s.
1 A
570
![Page 43: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/43.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
101
102
103
10-6
10-4
10-2
1
2
3
4
White series
Current [A] Gate width W [m]
EN
C [
elec
tron
s r.
m.s
. ]
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
Iopt = 10 mA
Wopt = 60 m
ENCmin = 0.8 e- r.m.s.
Iopt = 10 mA
Wopt = 60 m
ENCmin = 0.8 e- r.m.s.
10 mA
60
![Page 44: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/44.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Unified model : correlated - Proposed by Mikoshiba in 1982, developed in 1987-91
- Trapping (N) & mobility () fluctuations correlation
SiSiO2
SiSiO2
-±
ttt
NNN
N
NI
I
11
ttt
NNN
N
NI
I
11
![Page 45: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/45.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
L
sctI dxxN
NLW
I
f
kTS
0
2
2
2
)(
1
L
sctI dxxN
NLW
I
f
kTS
0
2
2
2
)(
1
Magnitude N & sc determines N or dominance
scxN
)(
1
Implemented in SPICE BSIM3
2*
2
2
2
2200*
*0
'2
2
2ln
NN
CNBNA
LWf
IkTL
NNC
NNBNN
NNA
CLfa
IqkTS
L
LLd
LLLox
effdI
2*
2
2
2
2200*
*0
'2
2
2ln
NN
CNBNA
LWf
IkTL
NNC
NNBNN
NNA
CLfa
IqkTS
L
LLd
LLLox
effdI
Unified model : correlated
![Page 46: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/46.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
120 eVFWHM
55Fe
10.9 e- r.m.s.
NIM A361 (1995)
Floating gate amplifier - multiple non destructive readingsT = - 110 °CProcessing time 160 s = ( 16 readings ) x 10 s
Floating gate amplifier - multiple non destructive readingsT = - 110 °CProcessing time 160 s = ( 16 readings ) x 10 s
![Page 47: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/47.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SiC propertiesWide Bandgap
EG=3.2 eV
High saturation velocity
vS = 200 m/ns
High Critical Field
EC = 2 MV/cmHigh thermal conductivity
SiC Si
![Page 48: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/48.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
PMOS
4
33
20)10(minAI
pFCsENC IL
ws
4
33
20)10(minAI
pFCsENC IL
ws
3.5 e -
6.5 e -
1pF
AMS PMOS:
Lmin= 0.35m ; =126 cm2/Vs ; A1=1
AMS PMOS:
Lmin= 0.35m ; =126 cm2/Vs ; A1=1
1
![Page 49: G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14 th International Workshop on Room Temperature](https://reader034.vdocument.in/reader034/viewer/2022051019/5697bf9f1a28abf838c94a6e/html5/thumbnails/49.jpg)
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
W/L = 2000/0.5 ( STM 0.18 m process)
ID: 0.25 - 0.5 - 1 mA
PMOS
ID: 0.25 - 0.5 - 1 mA
NMOS
ENC 1/f : experimental
from Manghisoni et al., IEEE TNS 2002
HznV13