gan sbd rectenna circuit with higher-harmonics rejection filtercs/wpt/paper/wpt2012-53.pdf ·...
TRANSCRIPT
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THE INSTITUTE OF ELECTRONICS, TECHNICAL REPORT OF IEICE INFORMATION AND COMMUNICATION ENGINEERS WPT2012-53 (2012-03)
This article is a technical report without peer review, and its polished and/or extended version may be published elsewhere.
GaN SBD
770-8506 2-1
E-mail: [email protected]
SBD
GaN SBD 2.45GHz
GaN SBD
GaN SBD Rectenna Circuit with Higher-Harmonics Rejection Filter K. Hayashino, H. Kume, K. Fukui, Y. Iwasaki, J. -P. Ao and Y. Ohno
Institute of Technology and Science, The University of Tokushima,
2-1 Minami-Josanjima, Tokushima 770-8506, Japan
E-mail: [email protected]
Abstract Inserting a higher-harmonics rejection filter in rectenna circuits, the reflected signal contains only the fundamental-mode. Then, the impedance matching becomes easy allowing the complete suppression of the reflection. Circuit simulation results indicated that the rectenna circuits look like the parallel connection of the junction capacitance of the SBD and load resistance. The parameters did not vary so largely that the matching operation is stable. Also, the filter characteristics did not largely affect the parameters. The technique is applied to GaN SBD rectenna circuits and confirmed that the reflection suppression at any load resistance values.
Keyword Rectenna Circuit, Higher-Harmonics Rejection Filter, Impedance Matching, GaN SBD, Reflection Suppression
1.
DC
[1]
L C
GaN (SBD)
-67-
-
2.
Z=0 Z= /4Z=0
DC
DC
Microwave Office(MWO)
( A)( B)
LPF2
S
S A)B) S
MWOS
SBD
GaN SBD (IS=3e-13mA, RS=7.2, CJ0=0.19pF, VJ=1V, N=1.5, M=0.28 )[2]
(1mF)2.45GHz 1W
1W
1~16
Cj0 1/24(b)
10W 0.1WC-V
S
5
1W
[3]
RLOADC
1
(B) Ry LPF
(A)
LPF RLOAD C
3
0
0.2
0.4
0.6
0.8
1
1.2
0 2.45 4.9 7.35 9.8 12.25 14.7 17.15 19.6
[GHz]
AB
LPF
2 3
-68-
-
3. GaN SBD
1.27mmAD1000 =10.6 tan =0.0023@10GHz
( 6)
DC 100pF
GRM1882-C2A-101JA01D) /42
5A
GaN SBD
72 m×100 m
8 DCRON=0.675 VF=1.17V 1MHz
C j0=3.96pF1 16
4. 8
Agilent E8364BVNA VNA Port 1
(40dB, Mini-Circuits ZHL-16W-43-S+)
-1
0
1
-1 0 1
1 finger
8 finger
16 finger
4 finger
2 finger
-1
0
1
-1 0 1
1 finger
8 finger
16 finger
4 finger
2 finger
10 W
(a)
(b) 4 (a)
(b)C
RLOAD nCj0/2
RLOAD
/4
n-finger diode
GaN
SBD
RF DC /4
6 GaN SBD
40
60
80
100
0.1 1 10 100
[%]
A
B
LPF
RLOAD=500
A
B
LPF
5 RF/DC-
DC ( DIODE) (f=2.45GHz)
-69-
-
(Agilent 772D Dual Directional Coupler)% -20dB
1%VNA Port 2 VNA
S21 S11VNA
/4/4
VNADC
Agilent U2722
2
VNA
5. 9
2 -20dB
3 -10dB 4 -15dB
10S11 11 P IN PREF
DC PDC DIODEREF RF/DC TOTAL
2.45GHz 0.25W, 20 200
1060 1.4 11
S100 150
100 150
15011
11
REF RF/DC TOTAL 1213
20
(1)
(2)
(3) REFDIODE
IN
DC
TOTAL
IN
REF
REF
REFIN
DC
DIODE
P
P
P
P
PP
P
1
RLOAD C
GaN SBD
VNA
( )
(-20dB)
(-20dB) (40dB)
( )
(DC )
( )
8
7 GaN SBD ( )8 (2 m×100 m)
Substrate
n-GaN
n+-GaN
Ni
Au
9 AD1000 A
-50
-40
-30
-20
-10
0
0 2.45 4.9 7.35 9.8 12.25 14.7
S[d
B]
S21
S11
-70-
-
14 20 150 40
,60 ,80RF/DC
RF/DC 56.6%
0.25W1.17V
5V10V
DC 35V
0.25W
0%
20%
40%
60%
80%
10 100 1000
EF
FIC
IEN
CY
0
2
4
6
8
OU
TP
UT
VO
LT
AG
E(V
)
No Match ing
DIODE
VDC
13 DIODE VDC
0%
20%
40%
60%
80%
10 100 1000
EF
FIC
IEN
CY
TOTA
REF
12 REF RF/DC TOTAL
20 150
0%
20%
40%
60%
80%
10 100 1000
EF
FIC
IEN
CY
REF
TOTAL
DIODE
10
11 S/4
-0.1
-0.05
0
0.05
0.1
-0.1 -0.05 0 0.05 0.1
SRE
SIM
No Matching
-71-
-
6.
GaN SBD20 150
100%
[1] K. Harauchi, et. al., “Power Transmission through
Insulating Plate Using Open-Ring Resonator Coupling and GaN Schottky Diode, ” IMWS-IWPT 2011, May 12-13, 2011 – Uji (Kyoto), Japan, IWPT2-2 (2011)
[2] K. Fukui, Taro Takeuchi, K. Hayashino, K.Harauchi,
Y. Iwasaki, J-P Ao, and Y. Ohno, "T-shaped Anode GaN Schottky Barrier Diode for Microwave Power Rectification," IMWS-IWPT 2012, FRI-F-23, Kyoto, Japan (2012)
[3] K. Hayashino, K.Harauchi, Y. Iwasaki, K. Fukui, J-P
Ao, and Y. Ohno, "Analysis of Loss Mechanism in Rectenna Circuit with GaN Schottky Barrier Diode," IMWS-IWPT 2012, FRI-E-2, Kyoto, Japan (2012)
0%
20%
40%
60%
80%
10 100 1000
EF
FIC
IEN
CY
0
2
4
6
8
OU
TP
UT
V
OL
TA
GE
(V)
REF
TOTAL
VDC
14 RF/DC TOTAL
-72-