UNLEASH THE POWER OF YOUR DATA

PROBLEM

SOLUTION

Get fast access to your mission-critical data anytime with the Intel® SSD DC D3700/D3600 Series drives

Modern data centers need a next-generation solid state drive (SSD) that can deliver high-availability storage faster and without interruption.

The Intel® SSD DC D3700/D3600 Series with dual-port NVMe* technology delivers fast performance and high availability for data center storage solutions.

2XBANDWIDTH

LOWER LATENCY

3.9X

3.3X

RANDOM IOPS

Numbers never lie

Compared to a standard SAS* SSD.1

Built-in redundancy through dual-port technology gives you seamless, reliable access to mission-critical data when and where you need it.

High availability of data. Anytime.NVMe controller technology provides high performance and low latency, giving you speedy access to your most important data.

Get your data. Fast.

Proven end-to-end data protection≥100x more reliable in preventing silent data corruption.3

SEE THE DIFFERENCE OF COMBINING HIGH AVAILABILITY WITH PERFORMANCE, RELIABILITY, AND INTEGRITY AT INTEL.COM/SSD.

1 Tests document performance of components on a particular test, in specific systems. Differences in hardware, software, or configuration will affect actual performance. Consult other sources of information to evaluate performance as you consider your purchase. Test and system configurations: The Intel SSD DC D3700/D3600 Series delivers up to 3.9x more IOPS, 2x bandwidth, and 3.3x lower latency vs. SAS SSDs. Performance comparison based on Intel internal analysis using Intel SSD DC D3700 1.6 TB spec data sheet vs. HGST ME SAS 1.6 TB drive spec data sheet. HGST specs: hgst.com/products/solid-state-drives/ultrastar-ssd1600mm, intel.com/content/www/us/en/solid-state-drives/solid-state-drives-dc-s3700-series.html. For more complete information about performance and benchmark results, visit intel.com/performance.

2 Intel SSD DC D3700/D3600 Series specs: intel.com/content/www/us/en/solid-state-drives/solid-state-drives-dc-d3700-series.html, intel.com/content/www/us/en/solid-state-drives/solid-state-drives-dc-d3600-series.html.

3 Demonstrated 10-17 uncorrectable bit-error rate (UBER) as compared to JEDEC* UBER specification of 1016. https://www.jedec.org/standards-documents/focus/flash/solid-state-drives. 100x more reliable in preventing silent data corruption. Test performed on Intel® SSD S3x00 drives, Samsung* PM853T and SM843T, Micron* P400e, Seagate* 600 Pro, and SanDisk* Lightning drives. Drives were exposed to increasing amounts of radiation. After a drive “hang,” a power cycle was performed to determine whether the drive would reboot. If a drive rebooted, it was read, and data was compared to the tester’s master copy of the up-to-date data that the drive was expected to contain based on writes the drive had acknowledged as completed prior to the “hang” event. If the drive returned data that differed from the expected data, it was recorded as failing for silent errors. The annual rate of silent errors was projected from the rate during accelerated testing divided by the acceleration of the beam (see JEDEC standard JESD89A).

Reliable performance under heavy demandSequential read of up to 2,100 MB/s and sequential write speed of up to 1,500 MB/s.2

High random read/write IOPSUp to 470K read and up to 95K write for 4 KB operations.2

Performance built on the latest industry standardsPCIe* 3.0 and NVMe 1.2 provide speed and low latency.

Copyright © 2016 Intel Corporation. All rights reserved. Intel, the Intel logo, the Intel. Experience What’s Inside logo, and Intel. Experience What’s Inside are trademarks of Intel Corporation in the U.S. and/or other countries. *Other names and brands may be claimed as the property of others. 0416/RC/MRM/PDF-USA 334169-001