igbt for drives inkl ts600v outlook - home - faculdade …fdosreis/ftp/catalogos/igbt_drives...bas,...

Drive and Control seminar 2003

Power Management& Supply

May 20031

F a s t ... F a s t ... H i g h S p e e d ... H i g h S p e e d ... T r e n c h S t o p ...T r e n c h S t o p ...

I G B TI G B T& D u o P a c & D u o P a c kk

TMTM

& E m C o & E m C o nnTMTM

DiodeDiode


May 20032 Application frequency is the main selection criteria of IGBT

IGBT - Where to use...Different application frequencies require different IGBTs

Frequency

Application Requirements

Ultra high (>150 kHz)

low

high

low <12 kHz medium <40 kHz

Bipolar Transistor

MOSFET

IGBTs for:

Low Frequency

Applications

(e.g. drives,induction cooking)

Medium FrequencyApplications

(e.g. UPS)

HighFrequencyApplications

(e.g. SMPS,lamp ballast)

high <150kHz



May 20033

Different switching frequencies require different IGBTs.Different switching frequencies require different IGBTs.

Pulse frequency typ. 2...16 kHz

(e.g. drives, induction cooking..)Pulse frequency typically 30..100 kHz (e.g. SMPS)

Conduction losses predominant! Switching losses predominant!

IGBT - Selection Depending on Application Frequency Application Specific Optimization

Low frequency applications: Higher frequency applications:

LO

W V

CE

sat

nee

ded

LO

W E

OFF

nee

ded

TrenchStop IGBT (600) / (1000) /1200V

High Speed (2) IGBT 600 / 1200V; LightMOS

Pulse frequency typ. 10...40kHz(e.g. UPS..)

Conduction and switching losses to be considered equally!

Medium frequency:

Fast IGBT600 / 1200V

EO

FFvs

. V

CE

sat


May 20034

IGBT PortfolioToday

600V (Fast IGBT) Fast IGBT HighSpeed IGBT e.g. SKP06N60 e.g. SKP15N60 e.g. SKW20N60HS

1000V --- (not required) (not required)

1200V TrenchStop IGBT Fast IGBT HighSpeed2 e.g. IKW15T120 e.g. SKW25N120 e.g. IKW03N120H2

Application

Voltage

Low Frequency Medium Frequency High Frequencye.g. drives, ind. cooking e.g. UPS e.g. SMPS

Application

Voltage

Application

Voltage

Today, our portfolio covers main applications



May 20035

Current Infineon IGBTs in Focus Applications

SK..06/10N60SK..15/20N60SK(G)..02/04N60

IKW25N120T

SGW10/20N60(HS)SGW25N120

IKW15T120 / IKW25T120

IGW03N120H2ILD(P)03N60(upcoming)

Application Infineon Device

Fast IGBT 600V DuoPack

TrenchStop 1200V DuoPack

High Speed 600V / Fast 1200V(depending on design)

Fast IGBT 1200V DuoPack (or Single)

HighSpeed2LightMOS(upcoming)

Product Family

Motor Drives e.g.- Wasching Machine- AirCon- Refridgerator /Dish W.

- Industrial Drives< 2.5 kW

UPS

Induction Cooking/Microwave

SMPSe.g. lamp ballast


May 20036

IGBT Features and Benefits

Features and BenefitsIGBT Feature

Temperature stable

switching behaviour

Temperature stable

switching behaviour No thermal runawayNo thermal runaway

Lowest conduction losses

(TrenchStop IGBT)

Lowest conduction losses

(TrenchStop IGBT) Reduced need for coolingReduced need for cooling

Positive temp. coefficient of VcesatPositive temp. coefficient of Vcesat Easy paralleling also for 600Vdevices

Easy paralleling also for 600Vdevices

Non Punch Trough Technology:

Short circuit rated Avalanche rated

Latch -up free

Non Punch Trough Technology:

Short circuit rated Avalanche rated

Latch -up free

High ruggednessHigh ruggedness

High current density(TrenchStop IGBT)

High current density(TrenchStop IGBT)

Highest current class (60A single & 40A DuoPack)

Highest current class (60A single & 40A DuoPack)

Customer Benefit



May 20037

Feature: Short Circuit RatedExceptional ruggedness of NPT and TrenchStop-Technology

Test Circuit :

Test Conditions :

TA=150°C

RG=56Ω; VDC=800V

VGEon=+15V; VGEoff= 0V

Short-circuit

Lσ

DUT2 0µ s

VDC

NPT and TrenchsTOP IGBT are short circuit proved due to the positive temperature coefficient in Vcesat

Short circuit IKW25T120

-20

0

20

40

60

80

100

120

140

160

180

0 5 10 15 20Time [µs]

Co

llect

or

curr

ent [

A]

-100

0

100

200

300

400

500

600

700

800

900

Co

llect

or

volt

age

[V]

UG E=0V U G E=15V U G E=0V

U C E

I C

10µs

10µs short:Successfulswitch-off


May 20038

Avalanche ruggedness of High Speed IGBT

Single pulse rated IGBTs in NPT-Technology

Avalanche rugged devices :

• 600V Fast IGBT

• 600V High Speed IGBT

• 1200V Fast IGBT

(limited by pulse energy)

Avalanche rugged devices :

• 600V Fast IGBT

• 600V High Speed IGBT

• 1200V Fast IGBT

(limited by pulse energy)

Avalanche SGW20N60HS

-1

0

1

2

3

4

5

6

7

0 10 20 30 40 50Time [µs]

Co

llect

or

curr

ent

[A]

-200

0

200

400

600

800

1000

1200

1400

Co

llect

or

volt

age

[V]

UGE

=15V UG E

=0V

UC E

I C

600V device

Typical avalanche breakdown voltage

of 900V - 1000V

Feature: Avalanche RatedExceptional ruggedness of NPT and TrenchStop-Technology



May 20039

Du

oP

ack™

15A

25A

40A

IKW15N120T

IKW25N120T

IKW40N120T

8A IKW08N120T

Sin

gle

IGB

T 8A

15A

25A

40A

IGW08N120T

IGW15N120T

IGW25N120T

IGW40N120T

60A IGW60N120T

Continuouscollectorcurrent

at T C =100°C

TO-247

IGW60T120 Best in Class

TO247

IKW40T120 Best in Class

TO247

Portfolio for Low Switching Frequencies (f <16kHz)TrenchStop IGBT 1200V


May 200310

Future IGBT PortfolioComplete Coverage of Focus Applications starting 2003

600V TrenchStop IGBT Fast IGBT HighSpeed IGBT(begin of 2004) HighSpeed2 (2004)e.g. IKP10T60 e.g. SKP15N60 e.g. IKW20N60H2

*)

1000V TrenchStop IGBT (not required) (not required)e.g. IKW25T100 (2004)

1200V TrenchStop IGBT Fast IGBT HighSpeed2 e.g. IKW25T120 e.g. SKW25N120 e.g. IKW03N120H2

Application

Voltage


Application

Voltage

Application

Voltage

*) plus LightMOS IGBT [Application specific IGBT for lamp ballast] (end 2003)e.g. ILD03N60

Our portfolio soon will cover all our target applications

CompanyCompanyConfidential

Confidential



May 200311

0

10

20

30

40

50

1,4 1,6 1,8 2 2,2 2,4 2,6 2,8

Conduction losses [a.u.]

Sw

itch

ing

loss

es [a

.u.]

conventionalNPT IGBTs

PT technology range

Infineon TrenchStop

TrenchStop 600VTechnology: Target parameters, Benchmark vs. Competitors

SGP10N60A IGP10N60TVCEsat 150°C 2.4V 1.75V -27%

Eoff 150°C 0.34mJ 0.34mJ +/- 0%Eon 150°C 0.31mJ 0.28mJ -10%

Latest NPT devices offer good performance. 600V TrenchStop will

even outperform this and become benchmark in consumer drives.


May 200312

TrenchStop 600VTechnology: Application requirements

PLUG

DC 1

PFC Controller

••

••

AC

85..

.380

V

D r i v e

µCon

trolle

r

CoolMOSTM / IGBT

EmConTM

TrenchStop IGBT

TrenchStop DuoPackTM

Consumer drives require:n Short circuit capability

(5µs, 15V Gate voltage , 400V Bus voltage)n Surge Current capability

(3x nominal current @ 15V Gate voltage)

TrenchStop – the DRIVES IGBT

Trenchstop 600V

ü

ü



May 200313

TrenchStop 600VTarget markets

TrenchStop 600V is ideally suited for all drivesapplications with low switching frequency (6-16kHz)

Main target applications: Consumer drives & applications:Washing mashines / Dishwashers /

Refrigerators / Aircons /Microwave ovens / Induction cooking

etc.


May 200314

TrenchStop 600VTechnology: Concept

TrenchStop

(Trench + Fieldstop)

n +

p+

GateEmitter (-)

Collector (+)

pEmitter

n-Fieldstop

n- wBas Bas,

p+

Fast IGBT

n+

p+ p

Gate

pEmitter

Emitter (-)

Collector (+)

n- wBas Bas,

The innovative TrenchStopIGBT concept is the next

evolutionary technology step

TrenchStop is the combination of Trench and FieldStop technologies



May 200315

TrenchStop 600VExpected Product Range

§ 3A to 75A

§ Single and DuoPacks (co-packed with antiparallel diode)

§ D-Pak, TO-220, TO-220 FullPack, TO-263 (D2Pak), TO-247

§ Lead products: 6A, 10A, 50A


May 200316

Future IGBT PortfolioComplete Coverage of Focus Applications starting 2003

600V TrenchStop IGBT Fast IGBT HighSpeed IGBT(begin of 2004) HighSpeed2 (2004)e.g. IKP10T60 e.g. SKP15N60 e.g. IKW20N60H2

*)

1000V TrenchStop IGBT (not required) (not required)e.g. IKW25T100 (2004)

1200V TrenchStop IGBT Fast IGBT HighSpeed2e.g. IKW25T120 e.g. SKW25N120 e.g. IKW03N120H2

Application

Voltage


Application

Voltage

Application

Voltage

*) plus LightMOS IGBT [Application specific IGBT for lamp ballast] (end 2003)e.g. ILD03N60

Our portfolio soon will cover all our target applications

CompanyCompanyConfidential

Confidential



May 200317

New HighSpeed2 IGBT (1200V) for “Fast Switching” Applications

HighSpeed2, the SMPS IGBT.

What’s new?• About 40% lower switching losses than conventional IGBTs in resonant topologies • About 15% lower price compared to high voltage power MOSFETs

Where’s it for?• For fast switching or resonant applications , e.g. SMPS for industrie drives , lamp

ballast, lighting ignition, DCM PFC, welding

What‘s available ?• 1A & 3A, 1200V IGBT• Qualification samples available ; production release in May 2003• Available in D2Pak, TO220 and TO247 packages and even in small DPak• DuoPack available (co-packed with antiparallel diode)


May 200318

HighSpeed2 IGBT - Features and Benefits


Smaller packages and lower price than MOSFET

Smaller packages and lower price than MOSFET Space and cost savingSpace and cost saving

Temperature stable behaviorTemperature stable behavior No thermal runawayNo thermal runaway

Optimized for resonant switchingOptimized for resonant switching Ideally suited for soft switchingapplications

Ideally suited for soft switchingapplications

No tail currentNo tail current MOSFET-like switching behaviorwithout EMI challenges

MOSFET-like switching behaviorwithout EMI challenges

Low threshold voltage Low threshold voltage Compatible to MOSFET gate driversCompatible to MOSFET gate drivers

Customer Benefit



May 200319

Portfolio for High Switching Frequencies (f<120kHz)HighSpeed2 IGBT 1200V

TO-252 TO-263(D-PAK) (D²-PAK)


at T C =100°C

TO-220 TO-247

1A1A IGD01N120H2IGD01N120H2 IGB01N120H2IGB01N120H2 IGP01N120H2IGP01N120H2

3A3A IGB03N120H2IGB03N120H2 IGP03N120H2IGP03N120H2

Sin

gle

IGB

TS

ing

le IG

BT

IGW03N120H2IGW03N120H2

Du

oP

ack

™D

uo

Pac

k™

1A1A IKB01N120H2IKB01N120H2 IKP01N120H2IKP01N120H2

3A3A IKB03N120H2IKB03N120H2 IKP03N120H2IKP03N120H2 IKW03N120H2IKW03N120H2

NEW!


May 200320

IGBT Roadmap

Time2002 2003 2004+

1200V

600V

Pulse Frequency

low

medium

high

TrenchStop8 - 60A

HighSpeed21 - 3A

Fast IGBT2 - 25A

low

high

medium

Fast IGBT2 - 30A

HighSpeed23 - 50A

TrenchStop3 - 50A

LightMOS3A

High Speed6 - 30A

Next

confidential



May 200321

Thank you!Feel free to ask questions now or later

Contact :[email protected]


May 200322

BackupIGBT & EmCon


Outlook – 600V IGBTs for Low Switching Frequencies (TrenchStop) Trade Off Behaviour Eoff vs. VCEsat @ 150°C

Dat

afr

omm

easu

rem

ent,

*) ta

rget

data

Trade Off 150°C (25°C)for 20A components

0

100

200

300

400

500

600

700

1 1.5 2 2.5 3 3.5 4

Ucesat/V

Eo

ff/µ

J

IFX HS

IFX FastIFX TrenchStop*)

VCEsat importantfor total losses !

The new TrenchStop 600V IGBTs reduce conduction losses to a minimum

Dat

afr

omda

tash

eets

, m

ayha

vedi

ffere

nt m

easu

rem

entc

ondi

tions

Comparision – 1200V IGBTs for Low Switching FrequenciesTrade Off Behaviour Eoff vs. VCEsat @ 25°C

trade off 25°Cfor 25A components

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

1 1.5 2 2.5 3 3.5 4 4.5

Ucesat/V

Eof

f/m

J

IFX Trenchstop

IFX Fast

FSC RUFD

FSC NPT series

IR motor control

Infineon TrenchStop IGBTs 1200V: lowest saturation voltage



Dat

afr

omda

tash

eets

, m

ayha

vedi

ffere

nt m

easu

rem

entc

ondi

tions

Comparision – 1200V IGBTs for Low Switching FrequenciesTrade Off Behaviour Eoff vs. VCEsat @ 150°C

trade off 150°C for 25A components

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

1 1.5 2 2.5 3 3.5 4 4.5

Ucesat/V

Eof

f/m

J

IFX Trenchstop

IFX FastFSC RUFD

FSC NPT series

IR motor control

Infineon TrenchStop IGBTs 1200V: lowest saturation voltage



May 200326

Focus Application: DriveReliability and Efficiency in Consumer and Industry Drives

IGBT is the key solution for drives and consumer applicationsIGBT is the key solution for drives and consumer applications

Low conduction losses & High reliability in:

• Home Appliances• Air Conditions• UPS• Industry Robots• General purpose drives • Consumer Applications

PLUG

DC 1

PFC Controller

••

••

AC

85..

.380

V

D r i v e

µCon

trolle

r

CoolMOSTM / IGBT

EmConTM

TrenchStop / Fast IGBT

TrenchStop / Fast DuoPackTM

600V & 1200V Fast IGBT for frequency 10-40kHz

1200V TrenchStop IGBT for benchmark lowest losses in slow switching applications (<16kHz)



May 200327

DuoPack™ :NPT IGBT with anti parallel EmCon™ Diode

IGBT Diode

DuoPack is the optimum solution for Drives

Benefit of the DuoPack, compared to single IGBT and single diode:• Low inductive connection• Savings in PCB space• Cost savings due to only one package

Benefit of the DuoPack, compared to single IGBT and single diode:• Low inductive connection• Savings in PCB space• Cost savings due to only one package


May 200328

-5

-4

-3

-2

-1

0

1

2

3

4

5

0.6 0.8 1 1.2 1.4 1.6 1.8 2t [µs]

V, I

Feature: Latch-up freeExceptional ruggedness through NPT-Technology

VGE = 20V

VCE : 150 V/div IC : 60 A/div

Turn off capability even at high gate voltages and current levels

VGE : 5 V/div

IC > 5.5 I nom

Tj =150°C

fSuccessful turn off

Inom

LL

Lσ

DUT

VDC

Test Circuit :

Device : IGW60T120



May 200329

Feature: Temperature Stable Switching BehaviourTurn off behavior of NPT and TrenchsTOP-Technology

Turn off energy - hard switchingHigh Speed IGBT v s Competitors

Minimum Tj-Dependence of Eoff due to NPT and TrenchStop IGBT

Rising Tj increases Eoff

only moderately due to NPT-Technology

èNo thermal runaway

Rising Tj increases Eoff

only moderately due to NPT-Technology

èNo thermal runaway

Temperature dependent Eoff at 400V, 20A, 16Ω

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0 25 50 75 100 125 150 175Tj [°C]

Eof

f[m

J]

Infineon HS-IGBTSKW20N60HS

IR WarpSpeedIRG4PC40W

Fairchild SMPS IHGTG12N60A4D

All devices similar chip size

SKW20N60HS

IRG4PC40W

HGTG12N60A4D


May 200330

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.4 0.8 1.2 1.6 2 2.4

Vce [V]

Ic [

arb

. un

its]

IGBT1

IGBT2

*) The effects of temperatureare exagerated to simplify visualisation!

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.4 0.8 1.2 1.6 2 2.4

Vce [V]

Ic [

arb

. un

its]

IGBT1

IGBT2

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.4 0.8 1.2 1.6 2 2.4

Vce [V]

Ic [

arb

. un

its]

IGBT1

IGBT2

IGBT with lowerVCEsat takes higher

current ⇒Tjunction rises

IGBT with lowerVCEsat takes higher

current ⇒Tjunction rises

Current share of hot IGBT increases

because of negative tempe-raturecoefficient

Current share of hot IGBT increases

because of negative tempe-raturecoefficient

Thermal runaway!Thermal runaway!

Pre

sent

atio

n M

ode

only

!!!

Feature: Positive Temperature Coefficient of VcesatParalleling NOT feasible with NEGATIVE temperature coefficient

Negative temperature coefficient szenario:

A negative temperature coefficient of Vcesat causes thermal runaway



May 200331

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.4 0.8 1.2 1.6 2 2.4

Vce [V]

Ic [

arb

. un

its]

IGBT1

IGBT2

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.4 0.8 1.2 1.6 2 2.4

Vce [V]

Ic [

arb

. un

its]

IGBT1

IGBT2

IGBT with lower VCEsattakes higher current ⇒

Tjunction rises higher

IGBT with lower VCEsattakes higher current ⇒

Tjunction rises higher

Current share of hot IGBT decreases

because of positive temperature coefficient

Current share of hot IGBT decreases

because of positive temperature coefficient

NO thermal runaway!NO thermal runaway!

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.4 0.8 1.2 1.6 2 2.4

Vce [V]

Ic [

arb

. un

its]

IGBT1

IGBT2

*) The effects of temperatureare exagerated to simplify visualisation!

Feature: Positive Temperature Coefficient of VcesatEasy paralleling with POSITIVE temperature coefficient

Positive temperature coefficient szenario:

A positive temperature coefficient of Vcesat causes thermal runaway

Equilibriumis reachedEquilibriumis reached


May 200332

Features: Lowest Conduction Losses (TrenchStop IGBT)TrenchStop™ IGBT versus competition

TrenchStop leads to massive reduction in conduction losses.

Typical output characteristic

Test Conditions :TJ=25°C

VGE=+15V

Collector current normalized to max. DC current @ 100°C Tcase

0.5V lower VCE(sat) than FCS0.8V lower VCE(sat) than IR

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0 0.5 1 1.5 2 2.5 3 3.5 4

Vce [V]

Ic n

orm

aliz

ed t

o In

om

IFX TrenchStope.g. IKW25T120

Fairchilde.g. SGH15N120RUFD

Interntl. Rectifiere.g. IRGP30B120KD-E



May 200333

Portfolio for Medium Switching Frequencies (f<40kHz)Fast IGBT 600V


at T C =100°C

SGW10N60ASGW10N60ASGW15N60SGW15N60SGW20N60SGW20N60

2A2A SGD02N60SGD02N60 SGB02N60SGB02N60 SGP02N60SGP02N604A4A SGD04N60SGD04N60 SGB04N60SGB04N60 SGP04N60SGP04N606A6A SGD06N60SGD06N60 SGB06N60SGB06N60 SGP06N60SGP06N60

10A10A SGB10N60ASGB10N60A SGP10N60ASGP10N60A15A15A SGB15N60SGB15N60 SGP15N60SGP15N6020A20A SGB20N60SGB20N60 SGP20N60SGP20N60

Sin

gle

IGB

TS

ingl

e IG

BT

30A30A SGB30N60SGB30N60 SGP30N60SGP30N60 SGW30N60SGW30N60

TO-247TO-252(D-PAK)

TO-263TO-220 TO-220

FULL-PAK

SKW10N60ASKW10N60ASKW15N60SKW15N60SKW20N60SKW20N60

SKB02N60SKB02N60 SKP02N60SKP02N60SKB04N60SKB04N60 SKP04N60SKP04N60SKB06N60SKB06N60 SKP06N60SKP06N60SKB10N60ASKB10N60A SKP10N60ASKP10N60ASKB15N60SKB15N60 SKP15N60SKP15N60D

uoP

ack

™D

uoP

ack

™

SKW30N60SKW30N60

SKA06N60SKA06N60SKA04N60SKA04N60

2A2A4A4A6A6A

10A10A15A15A20A20A30A30A

(D²-PAK)

SKA10N60ASKA10N60A

SGA20N60SGA20N60


May 200334



at T C =100°C

2A2A SKB02N120SKB02N120 SKP02N120SKP02N120

7A7A SKW07N120SKW07N120

15A15A SKW15N120SKW15N120

25A25A SKW25N120SKW25N120Duo

Pac

k™

Duo

Pac

k™

2A2A SGD02N120SGD02N120 SGB02N120SGB02N120 SGP02N120SGP02N120

7A7A SGB07N120SGB07N120 SGP07N120SGP07N120

15A15A SGB15N120SGB15N120 SGP15N120SGP15N120 SGW15N120SGW15N120

25A25A SGW25N120SGW25N120Sin

gle

IGB

TS

ingl

e IG

BT

TO-220 TO-247

Portfolio for Medium Switching Frequencies (f <40kHz)Fast IGBT 1200V



May 200335

TO-247TO-220TO-263

(D²-PAK)


at T C =100°C

Sin

gle

IGB

TS

ing

le IG

BT

SGW20N60HSSGW20N60HSSGW30N60HSSGW30N60HS

Du

oP

ack

™D

uo

Pac

k™

SKW20N60HSSKW20N60HSSKW30N60HSSKW30N60HS

SGP20N60HSSGP20N60HSSGP30N60HSSGP30N60HS

2A2A4A4A6A6A

10A10A15A15A20A20A30A30A

SKB15N60HSSKB15N60HS

10A10A15A15A20A20A30A30A

SGB15N60HSSGB15N60HS

SKB06N60HSSKB06N60HS

2A2A4A4A6A6A

Portfolio for High Switching Frequencies (f<100kHz)High Speed IGBT 600V


May 200336

New HighSpeed2 IGBT (1200V) for “Fast Switching” Applications

HighSpeed2, the SMPS IGBT.

What’s new?• About 40% lower switching losses than conventional IGBTs in resonant topologies • About 15% lower price compared to high voltage power MOSFETs

Where’s it for?• For fast switching or resonant applications , e.g. SMPS for industrie drives , lamp

ballast, lighting ignition, DCM PFC, welding

What‘s available ?• 1A & 3A, 1200V IGBT• Qualification samples available ; production release in May 2003• Available in D2Pak, TO220 and TO247 packages and even in small DPak• DuoPack available (co-packed with antiparallel diode)



May 200337

HighSpeed2 IGBT - Features and Benefits


Smaller packages and lower price than MOSFET

Smaller packages and lower price than MOSFET Space and cost savingSpace and cost saving

Temperature stable behaviorTemperature stable behavior No thermal runawayNo thermal runaway

Optimized for resonant switchingOptimized for resonant switching Ideally suited for soft switchingapplications

Ideally suited for soft switchingapplications

No tail currentNo tail current MOSFET-like switching behaviorwithout EMI challenges

MOSFET-like switching behaviorwithout EMI challenges

Low threshold voltage Low threshold voltage Compatible to MOSFET gate driversCompatible to MOSFET gate drivers

Customer Benefit


May 200338

Portfolio for High Switching Frequencies (f<120kHz)HighSpeed2 IGBT 1200V



at T C =100°C

TO-220 TO-247

1A1A IGD01N120H2IGD01N120H2 IGB01N120H2IGB01N120H2 IGP01N120H2IGP01N120H2

3A3A IGB03N120H2IGB03N120H2 IGP03N120H2IGP03N120H2

Sin

gle

IGB

TS

ing

le IG

BT

IGW03N120H2IGW03N120H2

Du

oP

ack

™D

uo

Pac

k™

1A1A IKB01N120H2IKB01N120H2 IKP01N120H2IKP01N120H2

3A3A IKB03N120H2IKB03N120H2 IKP03N120H2IKP03N120H2 IKW03N120H2IKW03N120H2

NEW!



May 200339

EmConTM DiodeShort Description

EmConEmConTMTM -- the the standardstandard diodediode for for electricelectric drivesdrives

EmCon - Emitter Controlled DiodeEmConEmCon -- Emitter Controlled DiodeEmitter Controlled Diode

n For industrial and consumer applicationse.g. home appliances / industrial motor drives, UPS, induction cooking, welding machines

n Low reverse current

n Soft switching behaviour

n 600V & 1200V diodes optimized to Infineon IGBTS


May 200340

EmConTM DiodeShort Description

EmConEmConTMTM -- the the standardstandard diodediode for for electricelectric drivesdrives

EmCon - Emitter Controlled DiodeEmConEmCon -- Emitter Controlled DiodeEmitter Controlled Diode

n For industrial and consumer applicationse.g. home appliances / industrial motor drives, UPS, induction cooking, welding machines

n Low reverse current

n Soft switching behaviour

n 600V & 1200V diodes optimized to Infineon IGBTS



May 200341

EmConTM Diode 600V & 1200V for DuoPackTM

Comparison of different diode concepts

p

n -

n+

Infineon EmCon technology

Ø Ultra-thin wafer and field-stop technology for smaller switching losses

Ø Adjusted front- and backside emittersfor improved switching

Ø Fast & soft switching

n+

70 µm

Conventional Epi-diodep

n - n

n+-Substrate

240 µm

0

5

2

43

1

76

8

n, p

[10

16 c

m-3]

High / Low carrier lifetime

n=p

p+ n- n+

QS

Ø Epitaxial silicon wafersØ Strong carrier lifetime killingØ High peak reverse recovery currentØ Strong negative temperature coefficient of VF

|E|

p–

n=p

E(x) atUR=UDC n–

p+ n- n+


May 200342

P- TO220- 2-2

Discrete EmCon™ Diodes Product Family 600V & 1200V

Continuousforwardcurrent

at T C =100°C

6A6A IDP06E60IDP06E609A9A IDP09E60IDP09E60

15A15A IDP15E60IDP15E6023A23A IDP23E60IDP23E6030A30A IDP30E60IDP30E6045A45A IDP45E60IDP45E60

600V

600V

TO-252(D-PAK)

TO-263 TO-220

1200

V12

00V

4A4A9A9A

12A12A18A18A30A30A

(D²-PAK)

3A3AIDD06E60IDD06E60IDD09E60IDD09E60IDD15E60IDD15E60IDD23E60IDD23E60

IDD03E60IDD03E60IDB06E60IDB06E60IDB09E60IDB09E60IDB15E60IDB15E60IDB23E60IDB23E60IDB30E60IDB30E60IDB45E60IDB45E60

IDP04E120IDP04E120IDP09E120IDP09E120IDP12E120IDP12E120IDP18E120IDP18E120IDP30E120IDP30E120

IDB04E120IDB04E120IDB09E120IDB09E120IDB12E120IDB12E120IDB18E120IDB18E120IDB30E120IDB30E120



May 200343

Power Semiconductors IGBT, DuoPack™ and Power Diode Numbering System

S G P 20 N 60 HS

Device :G for IGBTK for IGBT & Diode (DuoPack™)D for Diode

PackageType :D for TO252AA (D Pack)U for TO251AA (I Pack)B for TO263AB (D² Pack)P for TO220ABA for TO220-3-31( Fullpack)W for TO247AC

Voltage :Breakdown voltagedivided by 10

Technology :N for N ChannelE for EmCon™ Diode

T for TrenchStop IGBT

Current :Continuous collector current( @ Tc=100°C)

Company :S for Infineon formerly SiemensI for Infineon

Specifications:

HS for HighSpeedH2 for HighSpeed 2


May 200344

IGBT & DuoPackTM

Short Description

IGBT & IGBT & DuoPackDuoPackTMTM -- the the optimumoptimum devicedevice for for electricelectric drivesdrives

Insulated Gate Bipolar Transistor (IGBT)Insulated Gate Bipolar Transistor (IGBT)Insulated Gate Bipolar Transistor (IGBT)

n For industrial and consumer applications e.g. home appliances / industrial motor drives, UPS, induction cooking, welding machines

n Reduced conducting and switching losses in power conversion systems

n Manufactured in Ultra-Thin-Wafer NPT-Technology

n 600V & 1200V IGBTs optimized to different switching frequencies

n DuoPack™ - the combination with the very soft, fast recovery anti-parallel EmCon™ diode in one only package



May 200345 IGBT addresses low and medium frequency applications

IGBT - Where to use...IGBT vs. MOSFET and Bipolar Transistor


low

high

Bipolar Transistor

MOSFETIGBT

Frequency

Ultra high (>150 kHz)low <12 kHz medium <40 kHz high <150kHz


May 200346

Frequency


Ultra high (>150 kHz)

low

high

low <12 kHz medium <40 kHz

Bipolar Transistor

MOSFETIGBTInsulated Gate Bipolar Transistor

high <150kHz

Application frequency is the main selection criteria of IGBT

IGBT - Where to use...Difference between IGBT, MOSFET and Bipolar Transistor

MOS Field Effect Transistor

Difference IGBT vs. MOSFET:• smaller chip size -> lower price• softer switching, lower EMI• temperature stable - no significant losses

increase @ increasing Ta / Tj• not suitable for ultra high frequencies

Diff. IGBT vs. Bipolar: • higher ruggedness

(short circuit, avalanche)

• easier design• less passive devices

needed in system ->lower system costat same low VCEsat



May 200347

IGBT BehaviourCharacteristic difference between IGBT and MOSFET

VCEsatVDS

IC

ID

The IGBT is characterized by it‘s knee voltage.Conduction loss are in linear relation to IC

The MOSFET behaves like a resistor.Conduction loss are proportional to ID²

The IGBT has a characteristic current tail.Turn off losses are dominated by the tail current.

The IGBT is basically the preferred device for higher currents at limited pulse frequencies.

knee voltage

IGBT

MOSFET VCE

t

IC

current tail

ID

UDS

IGBT

MO

SFET


May 200348

MOSFET and IGBTDevice Structure in On State

IGBT current is provided by electrons and holes because of the additional p doped layer

RDSonMOSFET

n -

p n+

SiO2

Al

p

D

G

S

Resistor behavior : RDSon

NPT-IGBT

n -

pn+

SiO2

Al

G

p

C

E

VCEsat

Additional p layer



May 200349 If a reverse voltage can occur, a DuoPack is needed.

IGBT applied to reverse voltage (VCE<0)

n-

p n+

SiO2

Al

p

C

G

E

Diode withundefined

reversevoltage ~30V

VCE<0n+

n -

p

C

A

n-

p n+

SiO2

Al

p

C

G

E

Single IGBT

The pn- Diode has an undefined blocking voltage

-> Reverse voltage VCE<0 is not allowed.

IGBT with anti parallel Diode (DuoPack™)

Under reverse voltage condition current flow in the

anti parallel Diode occurs.


May 200350

Benefits of NPT

Technology

1) Thinner wafer → lower thermal resistance RthJC→ less carriers in IGBT on state

and therefore reduced Eoff.

2) Positive temperature coefficientof VCEsat

→ easy paralleling capability→ high short circuit withstand time.

3) Temperature stable behavior→ turn-on and turn-off characte-

ristic dos not depend on thetemperature.

4) No Epitaxie process required→ Lower cost.

emitter

n-p

n +Al

pcollector

600V NPT-IGBT

E

x

n +

SiO2

collector

emitter

Al

p+

n-

n+ Buffer

p

600V PT-IGBT

E

x

Insulated Gate Bipolar Transistor - IGBTNPT versus PT Technology

Thin wafer technology allows NPT IGBT’s also for 600V.



May 200351

TrenchStop™ IGBT and DuoPack™ 1200VTrenchStop versus Fast IGBT

1200V TrenchStop is implemented with Trench and Field Stop technologyand regards InfineonsThin Wafer Technology

1200V TrenchStop is implemented with Trench and Field Stop technologyand regards InfineonsThin Wafer Technology

Advantage for the Infineon Customer

Thinner wafer → massive reduction of

conduction losses→ Ideal IGBT for

Drives Applications

emitter

n-

p

p

n +Al

collector

1200V Fast IGBT

emitter n + Al

n-

p+

p body

collector

1200V TrenchStop

pn-Fieldstop

TrenchStop helps to save energy.


May 200352

60 -120 µmHuman hair

<100µm

TrenchStop

600V

100µm

Fast IGBT

600V

120µm

TrenchStop

1200V

175µm

Fast IGBT

1200V

70µm

EmCon

600V

120µm

EmCon

1200V

New Technologies, starting with higher voltage IGBTsThickness of different IGBTs and Diodes

Due to the thin Chip thickness a major challenge for 600V products is the reliable manufacturing process.



May 200353

Turn off behavior

Turn off Infineon SKW20N60HS - High Speed IGBT

PT-technology competitors: High tail current + Eoff

SKW20N60HS

-5

-4

-3

-2

-1

0

1

2

3

4

5

0 0.1 0.2 0.3 0.4 0.5 0.6t [µs]

V,

I

Turn off Fairchild HGTG12N60A4D - SMPS I

HGTG12N60A4D

-5

-4

-3

-2

-1

0

1

2

3

4

5

0 0.1 0.2 0.3 0.4 0.5 0.6t [µs]

V,

I

Turn off International Rectifier IRG4PC40W - Warp Speed

IRG4PC40W

-5

-4

-3

-2

-1

0

1

2

3

4

5

0 0.1 0.2 0.3 0.4 0.5 0.6t [µs]

V,

I

SKW20N60HS - HGTG12N60A4D - IRG4PC40W

-5

-4

-3

-2

-1

0

1

2

3

4

5

0 0.1 0.2 0.3 0.4 0.5 0.6t [µs]

V,

I

Uce_HS

Ic_HS

Uce_HGTG

Ic_HGTG

Uce_IRW

Ic_IRW

Infineon: Negligible tail current è Minimum Eoff at 150°C


May 200354

0

50

100

150

200

250

300

0 50 100 150 200 250 300 350 t [ns]

VCE [V]

0

5

10

15

20

25

IC [V]

Epi-DiodeEmCon™

Epi-DiodeEmCon™

IGBT turn-on losses dependence on the Diode.

Using EmCon Diode reduces IGBT turn off losses by 40%.

EmConTM Diode 600V & 1200V for DuoPackTM

Turn on measurement



May 200355

600V EmCon™Dynamic Performance

EmCon offers low Qrr=> reduced switching losses, soft behavior => EMI reduction.

(IGBT: SGP06N60, TJ = 150°C, RG = 47Ohm, DC link 300V)

-20

-10

0

10

IF [A]

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 t [µs]

EmConCompetitor 1Competitor 2

Low maximum reverse recovery current,low reverse recovery charge

Fast rise of blocking voltage, butdU/dt limited (EMC!)

Soft recovery

0

150

UF [V]

300

-150

450

igbt for drives inkl ts600v outlook - home - faculdade …fdosreis/ftp/catalogos/igbt_drives...bas,...

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