ika03n120h2 rev2 3g - infineon technologies
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IKA03N120H2
Power Semiconductors 1 Rev. 2.3 17.07.2013
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diode
Designed for:- TV – Horizontal Line Deflection
2nd
generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parameter distribution- Integrated anti-parallel diode- Eoff optimized for IC =3A
Qualified according to JEDEC2
for target applications Pb-free lead plating; RoHS compliant
G
C
E
PG-TO220-3-31(FullPAK)
PG-TO220-3-34(FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE IC Eoff Tj Marking Package
IKA03N120H2 1200V 3A 0.15mJ 150C K03H1202 PG-TO-220-3-31
IKA03N120H2 1200V 3A 0.15mJ 150C K03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VC E 1200 V
Triangular collector peak current (VGE = 15V)
TC = 100C, f = 32kHz
IC
8.2
A
Pulsed collector current, tp limited by Tjmax IC p u l s 9
Turn off safe operating area
VCE 1200V, Tj 150C
- 9
Diode forward current
TC = 25C
TC = 100C
IF
9.6
3.9
Gate-emitter voltage VG E 20 V
Power dissipation
TC = 25C
P t o t 29 W
Operating junction and storage temperature T j , T s t g -40...+150 C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Isolation Voltage V i s o l 2500 V r m s
1J-STD-020 and JESD-022
IKA03N120H2
Power Semiconductors 2 Rev. 2.3 17.07.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,junction – case
R t h J C 4.3 K/W
Diode thermal resistance,junction - case
R t h J C D 5.8
Thermal resistance,junction – ambient
R t h J A 62
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter Symbol ConditionsValue
Unitmin. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=300A 1200 - - V
Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=3A
T j=25C
T j=150C
VG E = 10V, IC=3A,T j=25C
-
-
-
2.2
2.5
2.4
2.8
-
-
Diode forward voltage VF VG E = 0, IF=3A
T j=25C
T j=150C
-
-
1.55
1.6
-
-
Gate-emitter threshold voltage VG E ( t h ) IC=90A,VC E=VG E 2.1 3 3.9
Zero gate voltage collector current IC E S VC E=1200V,VG E=0V
T j=25C
T j=150C
-
-
-
-
20
80
A
Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA
Transconductance g f s VC E=20V, IC=3A - 2 - S
Dynamic Characteristic
Input capacitance C i s s VC E=25V,
VG E=0V,
f=1MHz
- 205 - pF
Output capacitance Co s s - 24 -
Reverse transfer capacitance C r s s - 7 -
Gate charge QG a t e VC C=960V, IC=3A
VG E=15V
- 8.6 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 7 - nH
IKA03N120H2
Power Semiconductors 3 Rev. 2.3 17.07.2013
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T j=25C,
VC C=800V, IC=3A,
VG E=0V/15V,
RG=82 ,L
2 )=180nH,
C2 )
=40pF
Energy losses include“tail” and diode
3)
reverse recovery.
- 9.2 - ns
Rise time t r - 5.2 -
Turn-off delay time td ( o f f ) - 281 -
Fall time t f - 29 -
Turn-on energy Eo n - 0.14 - mJ
Turn-off energy Eo f f - 0.15 -
Total switching energy E t s - 0.29 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time t r r T j=25C,
VR=800V, IF=3A,
RG=82
- 52 - ns
Diode reverse recovery charge Q r r - 0.23 - µC
Diode peak reverse recovery current I r r m - 9.3 - A
Diode current slope diF /d t - 723 - A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T j=150C
VC C=800V, IC=3A,
VG E=0V/15V,
RG=82 ,
L2 )
=180nH,
C2 )
=40pF
Energy losses include“tail” and diode
3)
reverse recovery.
- 9.4 - ns
Rise time t r - 6.7 -
Turn-off delay time td ( o f f ) - 340 -
Fall time t f - 63 -
Turn-on energy Eo n - 0.22 - mJ
Turn-off energy Eo f f - 0.26 -
Total switching energy E t s - 0.48 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time t r r T j=150C
VR=800V, IF=3A,
RG=82
- 112 - ns
Diode reverse recovery charge Q r r - 0.52 - µC
Diode peak reverse recovery current I r r m - 11 - A
Diode current slope diF /d t - 661 - A/s
2)Leakage inductance L and stray capacity C due to dynamic test circuit in figure E
3)Commutation diode from device IKP03N120H2
IKA03N120H2
Power Semiconductors 4 Rev. 2.3 17.07.2013
Switching Energy ZVT, Inductive Load
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT Characteristic
Turn-off energy Eo f f VC C=800V, IC=3A,
VG E=0V/15V,
RG=82 , C r2 )
=4nF
T j=25C
T j=150C
-
-
0.05
0.09
-
-
mJ
IKA03N120H2
Power Semiconductors 5 Rev. 2.3 17.07.2013
I C,
CO
LLE
CT
OR
CU
RR
EN
T
10Hz 100Hz 1kHz 10kHz 100kHz0A
2A
4A
6A
8A
10A
12A
TC=100°C
TC=25°C
I C,
CO
LLE
CT
OR
CU
RR
EN
T
1V 10V 100V 1000V0,01A
0,1A
1A
10A
50s
DC
100ms
100s
20s
1ms
tp=10s
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency(Tj 150C, D = 0.5, VCE = 800V,VGE = +15V/0V, RG = 82)
Figure 2. Safe operating area(D = 0, TC = 25C, Tj 150C)
Pto
t,P
OW
ER
DIS
SIP
AT
ION
25°C 50°C 75°C 100°C 125°C 150°C0W
10W
20W
30W
I C,
CO
LLE
CT
OR
CU
RR
EN
T
25°C 50°C 75°C 100°C 125°C 150°C0A
2A
4A
6A
8A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature(Tj 150C)
Figure 4. Collector current as a function ofcase temperature(VGE 15V, Tj 150C)
Ic
Ic
IKA03N120H2
Power Semiconductors 6 Rev. 2.3 17.07.2013
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 1V 2V 3V 4V 5V0A
2A
4A
6A
8A
10A
12V
10V
8V
6V
VG E
=15V
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 1V 2V 3V 4V 5V0A
2A
4A
6A
8A
10A
12V
10V
8V
6V
VGE
=15V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25C)
Figure 6. Typical output characteristics(Tj = 150C)
I C,
CO
LLE
CT
OR
CU
RR
EN
T
3V 5V 7V 9V0A
2A
4A
6A
8A
10A
12A
Tj=+150°C
Tj=+25°C
VC
E(s
at),
CO
LLE
CT
OR
-EM
ITT
ER
SA
TU
RA
TIO
NV
OLT
AG
E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
IC=6A
IC=3A
IC=1.5A
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 20V)
Figure 8. Typical collector-emittersaturation voltage as a function of junctiontemperature(VGE = 15V)
IKA03N120H2
Power Semiconductors 7 Rev. 2.3 17.07.2013
t,S
WIT
CH
ING
TIM
ES
0A 2A 4A1ns
10ns
100ns
1000ns
tr
td(on)
tf
td(off)
t,S
WIT
CH
ING
TIM
ES
0 50 100 1501ns
10ns
100ns
1000ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, Tj = 150C,VCE = 800V, VGE = +15V/0V, RG = 82,dynamic test circuit in Fig.E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, Tj = 150C,VCE = 800V, VGE = +15V/0V, IC = 3A,dynamic test circuit in Fig.E)
t,S
WIT
CH
ING
TIM
ES
25°C 50°C 75°C 100°C 125°C 150°C1ns
10ns
100ns
1000ns
tr
td(on)
tf
td(off)
VG
E(t
h),
GA
TE-E
MIT
TE
RT
HR
ES
HO
LD
VO
LT
AG
E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
4V
5V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE = 800V,VGE = +15V/0V, IC = 3A, RG = 82,dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltageas a function of junction temperature(IC = 0.09mA)
IKA03N120H2
Power Semiconductors 8 Rev. 2.3 17.07.2013
E,
SW
ITC
HIN
GE
NE
RG
YLO
SS
ES
0A 2A 4A0.0mJ
0.5mJ
1.0mJ
Eon
1
Eoff
Ets
1
E,
SW
ITC
HIN
GE
NE
RG
YLO
SS
ES
0 50 100 150 200 250
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJ
Eon
1
Ets
1
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy lossesas a function of collector current(inductive load, Tj = 150C,VCE = 800V, VGE = +15V/0V, RG = 82,dynamic test circuit in Fig.E )
Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, Tj = 150C,VCE = 800V, VGE = +15V/0V, IC = 3A,dynamic test circuit in Fig.E )
E,
SW
ITC
HIN
GE
NE
RG
YLO
SS
ES
25°C 80°C 125°C 150°C
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
Ets
1
Eon
1
Eoff
Eoff,
TU
RN
OF
FS
WIT
CH
ING
EN
ER
GY
LO
SS
0V/us 1000V/us 2000V/us 3000V/us0.00mJ
0.04mJ
0.08mJ
0.12mJ
0.16mJ
IC=1A, T
J=150°C
IC=1A, T
J=25°C
IC=3A, T
J=150°C
IC=3A, T
J=25°C
Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy lossesas a function of junction temperature(inductive load, VCE = 800V,VGE = +15V/0V, IC = 3A, RG = 82,dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energyloss for soft switching(dynamic test circuit in Fig. E)
1) Eon and Ets include lossesdue to diode recovery.
1) Eon and Ets include lossesdue to diode recovery.
1) Eon and Ets include lossesdue to diode recovery.
IKA03N120H2
Power Semiconductors 9 Rev. 2.3 17.07.2013
C,
CA
PA
CIT
AN
CE
0V 10V 20V 30V
10pF
100pF
1nF
Crss
Coss
Ciss
VG
E,
GA
TE-E
MIT
TE
RV
OLT
AG
E
0nC 10nC 20nC 30nC0V
5V
10V
15V
20V
UCE
=240V
UCE
=960V
VCE, COLLECTOR-EMITTER VOLTAGE QGE, GATE CHARGE
Figure 17. Typical capacitance as afunction of collector-emitter voltage(VGE = 0V, f = 1MHz)
Figure 18. Typical gate charge(IC = 3A)
Zth
JC,
TR
AN
SIE
NT
TH
ER
MA
LR
ES
IST
AN
CE
1µs 10µs 100µs 1ms 10ms100ms 1s 10s
10-2
K/W
10-1
K/W
100K/W
101K/W
0.01
0.02
0.05
0.1 0.2
single pulse
D=0.5
Zth
JC,
TR
AN
SIE
NT
TH
ER
MA
LR
ES
IST
AN
CE
10µs 100µs 1ms 10ms100ms 1s 10s10
-2K/W
10-1
K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 19. Typical IGBT transient thermalimpedance as a function of pulse width(D=tP/T)
Figure 22. Typical Diode transientthermal impedance as a function ofpulse width(D=tP/T)
R , ( K / W ) , ( s ) 1,4285 5,24041,8838 1,76880,4057 0,075920,4234 0,0050180,3241 0,0005950,1021 0,0001260,1340 0,000018
C1=1/R1
R1 R2
C2=2/R2
R , ( K / W ) , ( s ) 0.9734 4.2791.452 1.0940.6213 4.899*10-2
0.7174 3.081*10-3
0.7037 4.341*10-4
0.1445 0.833*10-5
C 1= 1 /R 1
R 1 R 2
C2= 2/R 2
IKA03N120H2
Power Semiconductors 10 Rev. 2.3 17.07.2013
t rr,
RE
VE
RS
ER
EC
OV
ER
YT
IME
0Ohm 100Ohm 200Ohm 300Ohm
40ns
60ns
80ns
100ns
120ns
140ns
160ns
180ns
TJ=150°C
TJ=25°C
Qrr,
RE
VE
RS
ER
EC
OV
ER
YC
HA
RG
E
0Ohm 100Ohm 200Ohm 300Ohm0.2uC
0.3uC
0.4uC
0.5uC
0.6uC
TJ=150°C
TJ=25°C
RG, GATE RESISTANCE RG, GATE RESISTANCE
Figure 23. Typical reverse recovery timeas a function of diode current slopeVR=800V, IF=3A,Dynamic test circuit in Figure E)
Figure 24. Typical reverse recoverycharge as a function of diode currentslope(VR=800V, IF=3A,Dynamic test circuit in Figure E)
I rr,
RE
VE
RS
ER
EC
OV
ER
YC
UR
RE
NT
0Ohm 100Ohm 200Ohm 300Ohm8A
10A
12A
14A
16A
TJ=150°C
TJ=25°C
di rr
/dt,
DIO
DE
PE
AK
RA
TE
OF
FA
LL
OF
RE
VE
RS
ER
EC
OV
ER
YC
UR
RE
NT
0Ohm 100Ohm 200Ohm 300Ohm-1800A/us
-1600A/us
-1400A/us
-1200A/us
-1000A/us
-800A/us
-600A/us
TJ=150°C
TJ=25°C
RG, GATE RESISTANCE RG, GATE RESISTANCE
Figure 25. Typical reverse recoverycurrent as a function of diode currentslope(VR=800V, IF=3A,Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fallof reverse recovery current as afunction of diode current slope(VR=800V, IF=3A,Dynamic test circuit in Figure E)
IKA03N120H2
Power Semiconductors 11 Rev. 2.3 17.07.2013
I F,
FO
RW
AR
DC
UR
RE
NT
0V 1V 2V 3V0A
2A
4A TJ=150°C
TJ=25°C
VF,
FO
RW
AR
DV
OLT
AG
E-50°C 0°C 50°C 100°C 150°C
1.0V
1.5V
2.0V
2.5V
3.0V
IF=4A
IF=2A
IF=1A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward currentas a function of forward voltage
Figure 28. Typical diode forwardvoltage as a function of junctiontemperature
IKA03N120H2
Power Semiconductors 12 Rev. 2.3 17.07.2013
TO-220-3-FP
IKA03N120H2
Power Semiconductors 13 Rev. 2.3 17.07.2013
Ir r m
90% Ir r m
10% Ir r m
di /dtF
tr r
IF
i,v
tQS
QF
tS
tF
VR
di /dtr r
Q =Q Qr r S F
+
t =t tr r S F
+
Figure C. Definition of diodesswitching characteristics
p(t)1 2 n
T (t)j
11
2
2
n
n
TC
r r
r
r
rr
Figure D. Thermal equivalentcircuit
Figure E. Dynamic test circuit
Leakage inductance L= 180nH,Stray capacitor C = 40pF,Relief capacitor Cr = 4nF (only forZVT switching)
Figure A. Definition of switching times
Figure B. Definition of switching losses
öö
VDC
DUT(Diode)
½ L
RG DUT(IGBT)
L
½ L
C Cr
IKA03N120H2
Power Semiconductors 14 Rev. 2.3 17.07.2013
Published byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGAll Rights Reserved.
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