ion implanter – hv terminal 500 kv a number of nielsen and rf ion sources
DESCRIPTION
Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources for gaseous and solid materials mass analysis better than 1 a.m.u. beam current from 1-100 m A, beam scanning system target area up to 5 cm diameter. 2MV Van de Graaff ion accelerator - PowerPoint PPT PresentationTRANSCRIPT
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Ion implanter – HV terminal 500 kVa number of Nielsen and RF ion sources for gaseous and solid materialsmass analysis better than 1 a.m.u.beam current from 1-100 A, beam scanning systemtarget area up to 5 cm diameter
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2MV Van de Graaff ion acceleratorRF source for light ions - H, He and their isotopesRBS – beam line in preparation
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UHV chamber for thin film depositione-beam or thermal evaporation
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Dual ion miller for TEM specimen preparation
Thin film coating unitfor SEM sample preparation
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TEM – Philips EM400
120 keV
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TEM – Philips EM400T
120 keV
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SEM – Philips EM500
Oxford Instruments EDAX
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SEM – JEOL 25N with EPMA (e-microprobe)
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ANA
HV thin film deposition unit
with dual ion beams
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EMA 10 – UHV system
Surface analysis - LEIS i SIMS
(low energy ion
scattering and
Secondary ion
mass spectroscopy)
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Balzers SPUTTRON II thin film deposition system
d.c. and r.f. sputtering, four target elements, raective deposition
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Balzers BAK 550 evaporation system
e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor, programmable four layer deposition, reactive evaporation, residual gas analyzer, flash evaporation
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Talistep – thin film thickness and surface roughness measurements