equipment and process capabilities - … equipment...pecvd for imd semco memslab sputtering system...

Silicon Technologies, Centre of ExcellenceNanyang Technological University

50 Nanyang AvenueSingapore 639790

School of Electrical and Electronic Engineering

4/28/2014

EQUIPMENT AND

PROCESS

CAPABILITIESSI-COE & N2FC

Updated as of 14 Apr 2014

Our Facilities*

2

673m2 Class-100 Cleanroom on Si-based Research

N2FC Cleanroom 1 (NTU – School of EEE, S1-B5)

* Facilities will be upgraded before End 2014 to house next generation state-of-the-art equipments

Varian EHP-200 Ion Implanter

Sputtering System, Balzers Clusterline CL200

© 2013 Silicon Technologies, Centre of Excellence4/28/2014

Equipment and Process Capabilities

Our Facilities*

3

* Facilities will be upgraded before Year 2014 to house next generation state-of-the-art equipments

N2FC Cleanroom 2 (NTU – School of EEE, S2.2-B5)

693m2 Class-100 Cleanroom on Non-Si-based Research

Raith E_Line EBL system

Sumitomo Precision DRIE MUC-21

Surface Profiler Veeco – DEKTAK D150



4© 2013 Silicon Technologies, Centre of Excellence4/28/2014

E-beam lithography Vistec EBPG5200

MOCVD As/P for InP & GaAs-based

heterostructure growth

Aixtron

RIE for Metal Cello Nasca-20L

ICP RIEOxford Plasmalab System

100

PECVD for IMD Semco MEMSLAB

Sputtering system Oerlikon CLC200

Ion implanter Varian E220HP

On wafer RF test system for high speed

photonic devices Agilent N4373D

High voltage probe station & analyzer

Cascade 200M-STA-M

FESEM upgrade Leo 1550 FESEM

E-beam evaporator Cello Ohmiker-80

Die-to-wafer bonder Finetech Fineplacer Matrix

ALD Cambridge Nanotech

Sputter Elite Engineering

PECVD-RIE dual system

Plasma Therm 790

PECVD Cello

Furnace MRL

Epitaxy ASM E2000

RTP Jetstar 100B

RIE AST

ICP Oxford

Mask Aligner Karl Suss Mask Aligner 3&4

LPCVD Samco

LPCVD MRL

Descum AST

8 inch Capabilities 4/6 inch Capabilities


This material features some of the equipment capabilities of N2FC and Si-COE

equipments.


EquipmentE-beam Lithography. Vistec EBPG5200. The Vistec EBPG5200 is a high performancenanolithography system with full 200 mm writing capability. This Electron Beam Lithographysystem offers a wider range of solutions for both direct write nano-lithography and R&D maskmaking.

SpecificationsAcceleration voltage: 20, 50, 100 kV (TFE Source)Main Field Beam deflection: 20 bit DACField size: 168 μm x 168 μm to 1 mm x 1 mm (at 20, 50, 100 kV) Min. theoretical spot size: 2.2 nm Stage Travel range: 210 mm × 210 mm Writing Mode: Step & Repeat Automation: 10 position airlock Thermal stability: < 50 nm / hr (open loop) Footprint: < 20 m² Minimum feature size: < 8.0 nm Stiching and overlay accuracy: < ± 12 nm



EquipmentMOCVD. Close Coupled Showerhead, AIXTRON. This system is used for for InP & GaAs-basedheterostructure growth. The source materials (which are metal-organic compounds) aretransported by way of a carrier gas and gradually supplied to the reactor. A complex chemicalreaction results in thin semiconductor layers. The introduced gases are of a very high purityand can be exceptionally well dosed, which enables the film growth to be precisely controlled.

SpecificationsAvailable applications: GaN, InP/GaAs, ZnO, and II-VI materialsMaximum wafer size: 3 x 2”Flip-Top reactor lid3 zone heater for temperature uniformity



EquipmentRIE for Metal. Cello Nasca-20L, Cello Technology Co., Ltd. The Cello Nasca-20L Metal ReactiveIon Etching (MRIE) system provides capability of RIE etching of Metal materials. Clusteredmachine with one processing chamber and one loadlock chamber for transfer purpose. Wafersizes up to 8” diameters can be accommodated, as well as small random size pieces.

Process CapabilitiesAvailable gases: Cl2, BCl3, SF6, Ar, N2, O2

Helium mechanical clamp: AvailableMaximum wafer size: Up to 8”Typical targeted materials to be etched: Aluminum (Al), Titanium (Ti), Titanium Nitride (TiN),Tungsten (W) & etc.



EquipmentICP-RIE System. Oxford PlasmaPro100 Cobra, Oxford Instruments Plasma Technology Ltd.The Oxford PlasmaPro100 Cobra Inductive-Coupled Plasma Reactive Ion Etching (ICP-RIE)system provides capability of ICP-RIE etching of III-V, Si and other dielectric materials.Clustered machine with one processing chamber and one loadlock chamber for transferpurpose. Wafer sizes up to 8” diameters can be accommodated, as well as small random sizepieces. The system is NOT OPENED for metal materials.

Process CapabilitiesAvailable gases: Cl2, BCl3, SF6, CHF3, Ar, N2, O2

Helium mechanical clamp: AvailableMaximum wafer size: Up to 8”Typical targeted materials to be etched: AnyIII-V materials such as GaN, InP and etc., Silicon,Silicon oxide (SiO2).



EquipmentPECVD Deposition System. SEMCO MEMSLAB, SEMCO Engineering Inc. The SEMCOMEMSLAB PECVD deposition system provides capability of plasma enhanced chemical vapordeposition (PECVD) for silicon oxide, silicon nitride and amorphous silicon. Batch verticalfurnace type machine with front loaded vertical furnace chamber. Wafer sizes up to 8”diameters can be accommodated, as well as small random size pieces.

Process CapabilitiesAvailable gases: SiH4, N2O, NH3, SF6, O2 & N2

Allowable processing temperature: 380 CFurnace type: Batch VerticalMaximum number of processed wafers: 10 pcsMaximum wafer size: Up to 8”Typical targeted materials to be deposited: Silicon Oxide, Silicon Nitride and Silicon.



EquipmentSputtering System. Oerlikon Clusterline CLC200, Oerlikon Systems Ltd. The OerlikonClusterline CLC200 Metal Sputtering system provides capability of metal sputtering for certainmetal materials. Clustered machine with two processing chambers, one soft-etch chamber,one transfer chamber, one cool chamber and one loadlock chamber. Wafer sizes up to 8”diameters can be accommodated, as well as small random size pieces by sticking onto 8”wafer substrate.

Process CapabilitiesAvailable gases: N2 and ArMaximum allowable temperature: 375 CMaximum wafer size: Up to 8”Types of metal targets: Aluminium (Al), Copper (Cu), Titanium (Ti) and Tantalum (Ta)Typical targeted materials to be sputtered: Aluminium (Al), Copper (Cu), Titanium (Ti),Tantalum (Ta), Titanium Nitride (TiN), Tantalum Nitride (TaN), Aluminium Nitride (AlN).



EquipmentIon Implanter, Varian E220HP.

Process CapabilitiesSi ion implantation: 8” non-metal wafers.BF3 ion implantation: 8” non-metal wafers.AsH3 ion implantation: 8” non-metal wafers.Energy range: from 10 to 120 KeV.Dose range: from 1E14 to 1E15.*Small samples can be implanted (sticking onto 8” wafer)



EquipmentOn wafer RF test system for high speed photonic devices. Agilent Techologies Singapore Pte Ltd. This RF system iscustomized with 3 set of equipment, the N4373D lightwave component analyzer, N5244A network analyzer and N9030APXA signal analyzer. The lightwave component analyzer is to ideal measurement solution for test of electro-opticalcomponents up to 67GHz.The network analyzer is use for measuring active devices such as amplifiers, mixers andfrequency converters. The N9030A PXA signal analyzer provides frequency coverage up to 50GHz, ensures present andfuture flexibility through optional measurement capabilities and hardware expandability.

Process CapabilitiesMeasure S-parameters of the high speed lasers and photodetectors to 43.5 GHz.Schematic diagram for testing



EquipmentHigh voltage probe station & analyzer. Cascade T200M-STA-M, Cascade MicroTech Inc. The T200M-STA-M Tesla manual200mm probe station is engineered to provide probing levels of up to 3,000V (triaxial), 10,000V (coaxial) and 100W/cm2.In combination with Cascade Microtech’s patented MicroChamber®, the Tesla features a high-power, gold-plated chuckto ensure low-contact resistance, thin-wafer handling and power dissipation; all while providing a low-noise, fullyguarded and shielded test environment. To ensure the utmost safety during a high-voltage measurement, the Teslaemploys an infrared laser light curtain and safety interlock system.

Process CapabilitiesChuck Leakage: 15p (3,000v at 300 C for triaxial), 100n (10,000V at 300 C for coaxial)Probe Leakage: 20p (3,000v at 300 C for triaxial), NA (10,000V at 300 C for coaxial)Max Voltage: 3,000V (triaxial), 10,000V (Coaxial)Max Current: 100A (pulsed), 10A (DC)Power Dissipation: 100 W/cm2 at -40 CChuck Size: 8”Flatness: <15 um at ambient, <40 um at 200 CSupport wafer thickness: >= 100umSupported wafer diameter: Shards or wafers from 3” through 8”Temperature range: -55 C to 300 C.



EquipmentLEO 1550 FESEM. LEO 1550 Field Emission Scanning Electron Microscope (FESEM) is an ultra-high resolution field emission SEM utilizing the GEMINI field emission column. It is well suitedto a variety of applications owing to its versatile specimen chamber and large capacityCartesian stage.

Process CapabilitiesResolution: 1kV - 3nm, 20kV - 1nm Magnification: 20x to 200,000x Accelerating Voltage: 200V to 30kVSample Size: up to 6” wafer (available view field 3”).



EquipmentE-beam Evaporator, Cello Ohmiker-80. This e-beam evaporatorallows users to deposit a layer/layers of metals onto thesubstrate.

Process CapabilitiesMaterial: Al, Ti, Au, Cr, Cu, Ni.Wafer size allowed: 4”, 6” and 8”.Maximum Voltage: 10kV.Quantity per run: 18x4” wafers or 6x6” wafers or 3x8” wafers. Process Pressure: 2.0x10E-6 Torr



EquipmentFinetech Fineplacer Matrix. This system is for dieto wafer bonding.

Process CapabilitiesDie Size: 5*5mm

10*10mmSubstrate size: 4-8"Die Head

- Temperature range (top): 25-400C- Minimum temp ramp (top): 60C/min- Maximum process duration: 1 hour

Bottom Chuck- Temperature range (bottom): 25-360C- Maximum temp ramp (top): 48C/min (up to 160C), 6C/min (beyond 250C)



EquipmentAtomic Layer Deposition, Cambridge Nanotech ALD system.

Process CapabilitiesMaterial available: TMA, HfO2 and ZrO2.Wafer size: sample to 8”.Maximum chamber temperature: 300CProcess Pressure: 3x10E-1 Torr



EquipmentSputter. ELITE Sputter System. The ELITE Sputter System is a locallydesigned sputtering system which is equipped with three cathodes - oneRF and two DC. The chamber is pumped by a turbo pump. A rotatingstage is incorporated for better uniformity and able to accommodatewafers up to 4" in diameter, as well as smaller pieces.

Process CapabilitiesDC Power Supply(2 units): 1500 W (max)RF Power Supply(1 unit): 600 W (max)Process Gases: Argon, Nitrogen and OxygenSputter Capability: Single or co-sputter is possibleTarget Size: 3” diameter, thickness 6mm(max)Targets Approved: Ti, Au, W, Si, Cr, Pt, Ni

CrO2 sputtered on 6” wafer Laser Diode sputtered with Ti/Au 30nm Titanium on InP



EquipmentPECVD & RIE Dual System. PlasmaTherm PTi 790. A dual chamber system capable of deposition and etching of 6“ orsmaller wafers. The right chamber is for Plasma Enhanced Chemical Vapor Deposition (PECVD) while the left chamber isfor Reactive Ion Etching (RIE). The two chambers share the same vacuum pumps and RF generator but is hooked up todifferent gases. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlledseparately by a butterfly valve between the chamber and the pump. All system functions are controlled from thecomputer.. The control program has both manual and automatic modes of operation. Automatic mode is viaprogramming a sequence of process steps.

Process CapabilitiesPECVD The system is capable of processing standard and non-standard recipes. Standard recipe consist of high-temp (300 °C) and low-temp (50 °C) SiN and SiO2.Gases available: 5%SiH4 in N2, NH3, N2O, O2, CF4 and N2RF power: 500W (Max)Substrate heater: 300 °C (Max)

RIEThe RIE chamber is used for SiN and SiO2 etching.Gases available: O2, CF4 and ArRF power: 500W (Max)



EquipmentPECVD Deposition System. Cello Aegis-20, Cello Technology Co., Ltd. The Cello Aegis-20PECVD deposition system provides capability of plasma enhanced chemical vapour deposition(PECVD) for silicon oxide, silicon nitride and amorphous silicon. Clustered machine with oneprocessing chamber and one loadlock chamber for transfer purpose. Wafer sizes up to 6”diameters can be accommodated, as well as small random size pieces.

Process CapabilitiesAvailable gases: SiH4, N2O, NH3, SF6 & N2

Allowable processing temperature: 200 & 300 CMaximum wafer size: Up to 6”Typical targeted materials to be deposited: Silicon Oxide, Silicon Nitride and Silicon.



EquipmentMRL Furnaces. The MRL Furnaces are used for various thermal processes.

Process CapabilitiesMRL Drive in Furnace (Furnace A2): High temperature thermal process for 4”&6” non-metalwafers; maximum temperature 1150C; N2, H2 and O2 gases available.MRL Oxidation Furnace 1(Furnace A3): Dry oxide growth for 4”&6” non-metal wafers.MRL Oxidation Furnace 2(Furnace A4): Wet oxide growth for 4”&6” non-metal wafers.MRL POCL3 Furnace (Furnace B2): POCl3 doping at 950C for 4”&6” non-metal wafers.MRL Oxidation Furnace 3(Furnace B3): Annealing process for 4”&6” non-metal wafers,maximum temperature 1000C, N2, H2 and O2 gases available.MRL Alloy(Furnace B4): Annealing process for any kind of samples/wafers, maximumtemperature 1000C, N2, H2 and O2 gases available.



EquipmentASM Epitaxial Reactor, Epsilon 2000.

Process CapabilitiesCrystalline Si growth for 6” non-metal wafers only. Growth temperature ranging from 700C to maximum temperature 1080C using H2 and either SiH4 or SiCl2H2 gases depending on growth temperature.



EquipmentRTP. Jipelec Jetstar 100B. Temperature up to 1000 C for1 minute.

Process CapabilitiesUp to 4” wafer.



EquipmentRIE. AST CRIE 200, Advanced System Technology.CRIE 200 plasma etching system is designed tosupport GaN,InP and compound semiconductoretching. The system comes with a loadlock and isable to process wafers up to 6“. It comes with PC-based automated operating functions together withuser-friendly interface and intelligent errordetection.

Process CapabilitiesRF Power Supply: 600 W (max)Process Gases: Cl2, BCl3, CH4, O2Material Etched: GaN, InPTarget Sizes: 2”, 3”, 4”, 6” or smaller pieces

GaAs Etching GaN Etching using Cl2/BCl3 GaN Mesa Etching



EquipmentICP-RIE System. This system is used for etch III-Vcompound like InP, GaN and GaAs. The etch depthis estimated 5 um.

Process CapabilitiesSample size: very small sample as 1 mm by 1 mm to 4 inch wafer.RF power: up to 200 WICP power: up to 1000 WSubstrate Temperature: 60 deg C.



EquipmentMask Aligner, MJB3. Karl Suss. The MJB3 isequipped with a 350W mercury lamp providingUV Exposure wavelengths of 350 – 450nm. Themachine is equipped with High PrecisionAlignment stage.

SpecificationResolution*: Soft Contact (1-2micron) | HardContact (0.8-1.5 micron) | Vacuum Contact (Upto 0.6micron)Substrate size: up to 3” DiameterMask: 4”UV Range: 405 nm*Achievable parameter/value is subjected and not limited to

internal/external conditions & influences.

Mask SubstrateVacuum Chuck

N2Vac Vac



EquipmentMask Aligner, MJB4. Karl Suss. The MJB4 isequipped with a 350W mercury lamp providingUV Exposure wavelengths of 350 – 450nm. Themachine is equipped with High PrecisionAlignment stage and microscope manipulator.

SpecificationResolution*: Up to 0.5micronSubstrate size: up to 4” DiameterMask: 5”UV Range: 405 nm, 320 nm*Achievable parameter/value is subjected and not limited to

internal/external conditions & influences.



EquipmentLPCVD. Samco. This system is designed for nanowire growths for Si Nanowire and GaN Nanowire.

Process CapabilitiesSample size: very small sample as 1 mm by 1 mmto 2 inch wafer.Maximum ramping temperature: up to 850 C

GaN Nanowire



EquipmentLPCVD, MRL. MRL low pressure chemical vapour deposition systems are used for SiN, Polysiand Teos deposition.

Process CapabilitiesMRL LPCVD SiN(MRL LPCVD C2): LS/HS SiN deposition for 4”&6” non-metal wafers.MRL LPCVD PolySi(MRL LPCVD C3): polysi deposition for 4”&6” non-metal wafers.MRL LPCVD TEOS(MRL LPCVD C4): teos deposition for 4”&6” non-metal wafers.



EquipmentAST Clen100 Stripper / Descum. The Advanced System Technology plasma stripping systemremove thick layers of photoresist and polyimide in the shortest amount of production time.Powerful plasma stripping "sandblasts" tough resist in an automated, user-friendly system.

Plasma cleaning technology replaces hazardous and messy wet chemical processes previouslyused to strip thick layers of photoresist and polyimide. Plasma stripping system is effective fortough jobs as well gentler applications such as descumming and removing organics.

Process CapabilitiesRF Generator: 600 W (max)Process Gases: CF4, O2, ArSample Sizes: 2”, 3”, 4” or smaller piecesUsage Purpose: Photoresist Stripping, Photoresist Descum, Surface Treatment / Cleaning


The End

31

Introduction of Si-COE


equipment and process capabilities - … equipment...pecvd for imd semco memslab sputtering system...

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