jan-gustav werthen 1 st cpv china & 4 th international cpv workshop september 17 – 18, 2012...

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Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

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Page 1: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

Jan-Gustav Werthen

1st CPV China & 4th International CPV WorkshopSeptember 17 – 18, 2012

JDSU 6” Wafer CPV Cells

Page 2: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

2

Outline

The value of MQW for CPV• Theory & Modeling

JDSU 42% MQW Cells• Qualified production cells

Performance Roadmap Summary

Page 3: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

3

There are no ternary alloys lattice matched to Ge or GaAs with a lower bandgap than GaAs

The Value of Multiple Quantum Wells (MQW)

InGaP/GaAs

The GaInP and GaAs bandgaps in a tandem/triple junction are too high.

Page 4: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

4

GaAs Band Gap not ideal

• GaAs bandgap energetically too high• InGaAs better suited for AM1.5 spectrum under concentration

GaAsIn0.1GaAs

1000 Suns

J. Ward et al, 23rd IEEE PVSC, 650-654 (1993)

Page 5: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

5

Lattice Mismatch in Bulk InGaAs Leads to Dislocations

Dislocations

Page 6: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

6

GaAsP (barrier)

InGaAs (well)

GaAs (bulk)

We are able to grow up to 65 quantum wells with this technique

‘Strain balanced’ quantum well solar cells are dislocation free

EF

Stress Balancing Avoids the Creation of Dislocations

Page 7: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

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Generation and Recombination with MQWs in Cell Junction

p i

Sh

ock

ley

Inje

ctio

n

Re

com

bin

atio

n

Re

com

bin

atio

n

Δμ

n

Thermal escape

Thermal escape

Ge

ne

ratio

n

At short circuit current all generated carriers escape from the wells

GaAsGaAsP

InGaAs

Page 8: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

8

MQW Cell Spectral Response: Modeling and Experiment

Page 9: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

9

JDSU Production MQW CPV Cells: Spectral Response

Page 10: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

10

Typical Performance Parameters Production MQW Cells

Page 11: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

11

Highest Performing Production MQW Cells

High-Efficiency Cell (9.3mm x 9.3mm)

Page 12: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

12

Distribution (Efficiency and Current at max power)

Data shown for 9.3mm x 9.3mm cells

Page 13: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

13

Temperature Coefficients

Page 14: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

14

MQW Cell Platform Fully Qualified

Page 15: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

15

MQW Cell Performance Roadmap

2012

41%*2014

42%2015

43%

InGaP MQW MQW

2013

41.5%

AlInGaP

6 inch wafer

AlGaAs

GeGe

MQW MQW MQW

Ga(In)As

GeGe

*Minimum average efficiency from the first available production cells

This roadmap contains forward-looking product development plans based on current expectations. The actual products, product functionality, and timing of the product and or product functionality releases could change materially.

Page 16: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION

16

Summary

MQW CPV Cells Perform as Expected• Median cell efficiency at 41.5% per wafer

JDSU MQW Cell Platform Established• Qualified production cells on 150mm (6”) wafers

Roadmap Expands the Use of MQWs • Add MQWs to top cell to reach 43% per wafer

Acknowledgements to the JDSU engineering team:Ben Browne, Jon Lacey, James Liu, Xiaodong Chen,

Ta-Chung Wu, Gianluca Bacchin, Tom Tibbits

Page 17: Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

Thank You

[email protected]