©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

KS

T3

906

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Symbol Parameter Value Units

VCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temperature 150 °C

Symbol Parameter Test Condition Min. Max. Units

BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 -40 VBVCEO * Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -40 VBVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 -5 VICEX Collector Cut-off Current VCE= -30V, VEB= -3V -50 nAhFE * DC Current Gain VCE= -1V, IC= -0.1mA

VCE= -1V, IC= -1mAVCE= -1V, IC= -10mAVCE= -1V, IC= -50mAVCE= -1V, IC= -100mA

60801006030

300

VCE (sat) * Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mAIC= -50mA, IB= -5.0mA

-0.25-0.4

VV

VBE (sat) * Base-Emitter Saturation Voltage IC= -10mA, IB= -1.0mAIC= -50mA, IB= -5.0mA

-0.65 -0.85-0.95

VV

fT Current Gain Bandwidth Product IC= -10mA, VCE= -20Vf=100MHz

250 MHz

Cob Output Capacitance VCB= -5V, IE=0, f=1.0MHz 4.5 pFNF Noise Figure IC= -100µA, VCE= -5V

RS=1KΩf=10Hz to 15.7KHz

4 dB

tON Turn On Time VCC= -3V, VBE= -0.5VIC= -10mA, IB1= -1mA

70 ns

tOFF Turn Off Time VCC= -3V, IC= -10mAIB1=IB2= -1mA

300 ns

KST3906

General Purpose Transistor

2A

Marking

1. Base 2. Emitter 3. Collector

SOT-231

2

3

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

KS

T3

906

Typical Characteristics

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage

Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product

-1 -10 -100 -10001

10

100

1000

VCE = -1V

h FE,

DC

CU

RR

ENT

GAI

N

IC[A], COLLECTOR CURRENT

-0.1 -1 -10 -100

-0.01

-0.1

-1

-10

VCE(sat)

VBE(sat)

IC = 10 IB

V BE(

sat),

VC

E(sa

t)[V]

, SAT

UR

ATIO

N V

OLT

AGE

IC[mA], COLLECTOR CURRENT

-1 -10 -1000.1

1

10

100

IE = 0f = 1MHz

Cob

[pF]

, CAP

ACIT

ANCE

VCB [V], COLLECTOR-BASE VOLTAGE

-0.1 -1 -10 -10010

100

1000

VCE = -20V

f T[M

Hz]

, C

UR

REN

T G

AIN

BAN

DW

IDTH

PR

OD

UC

T

IC[mA], COLLECTOR CURRENT

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

0.9

7R

EF

1.3

0 ±

0.1

00.4

5~

0.6

0

2.4

0 ±

0.1

0

+0.05–0.023

0.2

0 M

IN

0.40 ±0.03

SOT-23

Package DimensionsK

ST

39

06

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. I1

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2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

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Definition of Terms

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Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

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