large-scale terahertz active arrays in silicon using ...€¦ · recent progress and new challenges...
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Large-Scale Terahertz Active Arrays in Silicon Using Highly-Versatile
Electromagnetic Structures(Invited Paper)
Cheng Wang, Zhi Hu, Guo Zhang,Jack Holloway and Ruonan Han
Dept. of Electrical Engineering and Computer ScienceMicrosystem Technology LaboratoriesMassachusetts Institute of Technology
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Enabling
Technology
Applications
(Demos)
Today
The Dawn of a New Terahertz Era
2
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The Dawn of a New Terahertz Era
3
Cost &
Size
System
Complexity
The Next THz Era
Enabling
Technology
Applications
(Demos)
Today
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The Dawn of a New Terahertz Era
4
Cost &
Size
System
Complexity
The Next THz Era
Enabling
Technology
Applications
(Demos)
Today
![Page 5: Large-Scale Terahertz Active Arrays in Silicon Using ...€¦ · Recent Progress and New Challenges 5 2006 2008 2010 2012 2014 2016 1E-5 1E-4 1E-3 0.01 0.1 1 10) Year 0.2 0.3 0.4](https://reader035.vdocument.in/reader035/viewer/2022080719/5f797fb3df50d01d9139b4c3/html5/thumbnails/5.jpg)
Recent Progress and New Challenges
5
2006 2008 2010 2012 2014 20161E-5
1E-4
1E-3
0.01
0.1
1
10
DC
to
TH
z R
ad
iati
on
Eff
icie
nc
y (
%)
Year
0.2 0.3 0.4 0.5-15
-10
-5
0
5
10
Po
ut (
dB
m)
fout
(THz)
[IMS 2013][ISSCC 2013]
[ISSCC 2012]
[ESSIRC 2013]
[ISSCC 2014]
[T-MTT 2014]
[ISSCC 2014]
10-2
1
10-4
[ISSCC 2008]
[ISSCC 2011]
[VLSI 2011]
[ISSCC 2012]
[ESSIRC 2012][ISSCC 2013]
[ISSCC 2014]
[IMS 2013]
Our Work
Our Work
Our Work
[ISSCC 2015]
Our Work
[ISSCC 2015]
[R. Han, etc., IEDM 2016]
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Recent Progress and New Challenges
6
2006 2008 2010 2012 2014 20161E-5
1E-4
1E-3
0.01
0.1
1
10
DC
to
TH
z R
ad
iati
on
Eff
icie
nc
y (
%)
Year
0.2 0.3 0.4 0.5-15
-10
-5
0
5
10
Po
ut (
dB
m)
fout
(THz)
[IMS 2013][ISSCC 2013]
[ISSCC 2012]
[ESSIRC 2013]
[ISSCC 2014]
[T-MTT 2014]
[ISSCC 2014]
10-2
1
10-4
[ISSCC 2008]
[ISSCC 2011]
[VLSI 2011]
[ISSCC 2012]
[ESSIRC 2012][ISSCC 2013]
[ISSCC 2014]
[IMS 2013]
Our Work
Our Work
Our Work
[ISSCC 2015]
Our Work
[ISSCC 2015]
[R. Han, etc., IEDM 2016]
What are the true advantages of using silicon IC for THz hardware (besides low cost, baseband integration…)?
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Large-Scale Terahertz Active Array
7
Integration Capability of Silicon Chips
Homogeneous Array• Power combining• Beam collimation• Beam steering• …
Heterogeneous Array• Broadband sensing• Parallel signal processing• Waveform generation• …
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Outline
Background
Homogeneous Array: 1-THz Radiation SourceMulti-Functional Mesh Structure
Chip Prototype in SiGe and Measurement Results
Heterogeneous Array: 220-to-320GHz Frequency-Comb SpectrometerHigh-Parallelism Architecture and THz Molecular Probing Module
Chip Prototype in CMOS and Measurement Results
Gas-Sensing Demonstration
Conclusion8
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Outline
Background
Homogeneous Array: 1-THz Radiation SourceMulti-Functional Mesh Structure
Chip Prototype in SiGe and Measurement Results
Heterogeneous Array: 220-to-320GHz Frequency-Comb SpectrometerHigh-Parallelism Architecture and THz Molecular Probing Module
Chip Prototype in CMOS and Measurement Results
Gas-Sensing Demonstration
Conclusion9
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Beam Collimation in a Radiator Array
10
-90 900-60 -30 30 60Angle (degree)
No
rma
lize
d P
ow
er
(dB
)
-30
-20
-10
0
-90 900-60 -30 30 60Angle (degree)
No
rma
lize
d P
ow
er
(dB
)
-30
-20
-10
0
-90 900-60 -30 30 60Angle (degree)
No
rma
lize
d P
ow
er
(dB
)
-30
-20
-10
0
D=λ/4 D=λ/2 D=λ
D
θ
Array of N coherent radiation sources enables: Power combining from a large number of solid-state devices
Beam collimation through wave interference
The far-field radiation intensity increases by N2
Optimum Element Pitch: λ/2
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High-Density, Large-Scale Active Array on Chip
• If the λ/2 pitch is achieved:‒ >10/mm2 radiators at
300 GHz can be built
‒ Dopt is ~300μm(with εr,eff≈3)
• High effective isotropicallyradiated power (EIRP) may be maintained in the mid-THz range
‒ Long transmission distance
11
0.01 0.1 1 10 100 10000.01
0.1
1
10
100
Be
am
Wid
th (
de
gre
e)
Frequency (THz)
100
101
102
103
104
105
106
107
108
# o
f Co
here
nt R
ad
iato
rs
1 Antenna
(JSSC 2002)
2 m
m
2.2 mm
4 Antennas
(ISSCC 2013)Optical Antenna Array
Note: Calculations Based on a 10mm2 Active Area
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High-Density, Large-Scale Active Array on Chip
12
0.01 0.1 1 10 100 10000.01
0.1
1
10
100
Be
am
Wid
th (
de
gre
e)
Frequency (THz)
100
101
102
103
104
105
106
107
108
# o
f Co
here
nt R
ad
iato
rs
1 Antenna
(JSSC 2002)
2 m
m
2.2 mm
4 Antennas
(ISSCC 2013)
1 mm
16 Antennas
(ISSCC 2015)Optical Antenna Array
Our Work
Note: Calculations Based on a 10mm2 Active Area
1.3
mm
1.6mm
Radiators
VC
Os
+B
uff
ers
Other PLL Blocks
1.895 1.9 1.905 1.91 1.915-100
-90
-80
-70
-60
-50
Frequency (GHz)
Po
we
r (d
Bm
)
Frequency Locked
Free Running
Frequency (Hz)
PN
(d
Bc/H
z)
-67.4dBc/Hz @ 100KHz
-87.2dBc/Hz @ 10MHz
Phase Noise After Locking
10K 100K 1M 10M 100M-100
-90
-80
-70
-60
-50
• 320-GHz Array w/ PLL in SiGe BiCMOS
• 4x4 elements in 1-mm2 area
• 3.3mW total radiated power (EIRP: 24mW)
[R. Han, ISSCC 2015]
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High-Density, Large-Scale Active Array on Chip
• ~100/mm2 radiator density should be possible
‒ Only 3° of beamwidth using 10-mm2 chip area(~1000 coherent radiators)
• Large challenges‒ Signal generation at 1 THz
‒ Available radiator area:100×100μm2
‒ Highly scalable array architecture
13
0.01 0.1 1 10 100 10000.01
0.1
1
10
100
Be
am
Wid
th (
de
gre
e)
Frequency (THz)
100
101
102
103
104
105
106
107
108
# o
f Co
here
nt R
ad
iato
rs
1 Antenna
(JSSC 2002)
2 m
m
2.2 mm
4 Antennas
(ISSCC 2013)
1 mm
16 Antennas
(ISSCC 2015)Optical Antenna Array
Our Work
??
Note: Calculations Based on a 10mm2 Active Area
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Implementation Challenges
14
0
100
200
300
400
500
0 40 80 120 160 200 240 280
Me
as
ure
d f
ma
x (
GH
z)
(In
terc
on
ne
ct
Inc
lud
ed
)
Technology Node (nm)
CMOSSiGe
[R. Shmid, et al., IEEE Trans. Electron Devices 2015]
Cutoff Frequency of
Silicon Devices
f0 x 42. Frequency Quadrupler
1. Fundamental (f0) Oscillator
4. Filters for Unwanted Harmonics f0 2f0 3f0 4f0
λf0/4=λ4f0
3. Antenna at 4f0 λ4f0/2
λ4f0/2
Available Area
High-Order Harmonic Radiation
f0=250GHz, fout=4f0=1THz
Low device speed requires high-order harmonic generation‒ Optimal device conditions at all harmonic frequencies should be met
The available area is too small for all these necessary functions
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Enabling Technology: Versatile EM Designs
• A multi-functional electromagnetic structure around the transistors to simultaneously perform all the above tasks
‒ Orthogonality of various EM wave modes
‒ Multi-order standing-wave interference in the near field 15
λ4f0/2
Multi-Functional Structure
3. Antenna at 4f0 λ4f0/2
1. Fundamental (f0) Oscillator
λf0/4=λ4f0
4. Filters for Unwanted Harmonics f0 2f0 3f0 4f0
f0 x 42. Frequency Quadrupler
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High-Density, Large-Scale Active Array on Chip
16
0.01 0.1 1 10 100 10000.01
0.1
1
10
100
Be
am
Wid
th (
de
gre
e)
Frequency (THz)
100
101
102
103
104
105
106
107
108
# o
f Co
here
nt R
ad
iato
rs
1 Antenna
(JSSC 2002)
2 m
m
2.2 mm
4 Antennas
(ISSCC 2013)
1 mm
16 Antennas
(ISSCC 2015)
1 mm
91 Antennas
(RFIC 2017)Optical Antenna Array
Our Work
Note: Calculations Based on a 10mm2 Active Area
1 mm
• 1-THz Array in 130-nm IHP SiGe BiCMOS
• 91 coherent radiator in 1-mm2 area
• 0.1-mW total radiated power(EIRP: 20mW)
[Z. Hu and R. Han, IEEE RFIC, Jun. 2017
(Best Student Paper Award-2nd Place)]
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Fundamental Oscillation at f0=250GHz
• At f0, each square slot line behaves as a pair of λ/4 standing-wave resonators
17
Q≈20 @ 250GHzCap
Cap
ABCD B
C D
AB
C D
B
C
@ f0
λf0/8
λf0/8 AC Short
λf0/4
Optimal Fundamental Oscillation
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Multi-Order Standing Wave Interference
• Unwanted harmonics (@ f0, 2f0, 3f0) are canceled by near-field interference
18
Cap
Cap
Cap
Cap
ABCD B
C D
AB
C D
B
C
AB
C D
B
C
AB
C D
B
C
AB
C D
B
C
ABCD B
C D ABCD B
C D ABCD B C D
@ f0
Cap
Cap
Cap
Cap
250-GHz Oscillation
Radiation Suppression and Energy Recycling of Harmonics 1-THz Radiation
λ/4
@ 2f0
λ/2
@ 3f0
3λ/4
@ 4f0
λ
No Separate Filter is Needed
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High-Density Radiation at 1 THz
• The 1-THz standing waves in all horizontal slots are in phase‒ Effective backside radiation (ηrad,sim=63%)
‒ On average, each oscillator (4x7 in total) drives 2 slot dipole antennas
19
AB
C D
B
C
ABCD B C D
@ 4f0=1THz
Cap
Cap
λ/2 @
1THz
Slot Dipole
Antenna
91 Coherent Antennas (D≈λ/2)
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Measurement Results: Frequency and Spectrum
• Oscillation frequency is determined by a sub-harmonic SBD mixer‒ Weak radiation leakage at f0
‒ Measured fundamental frequency: 252.5 to 254.1 GHz
‒ 4f0 output: 1.01 to 1.016 THz 20
Power Supplies
VB
GNDVCC
Spectrum Analyzer
(Tektronix RSA3303A)
WR-3.4
AntennaWR-3.4
Mixer
IF
Amplifier
Chain
Signal Generator (Keysight E8257D)
LO=15.8GHz
1.0 1.1 1.2 1.3252
253
254
Me
as
ure
d fOSC,fund (
GH
z)
VB (V)
f0 = 16fLO + foffset
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Measurement Results: Radiated Power
• The radiated power is measured by a calibrated WR-1.0 zero-biased diode detector
‒ Measured total radiated power: 80 μW
‒ Measured beam directivity: 24 dBi (θ-3dB=11°)
‒ Measured EIRP: 20 mW21
Simulation
Measurement
H-Plane
-90 -60 -30 0 30 60 90
-40
-30
-20
-10
0
Phi (degree)No
rmalized
Re
ce
ive
d P
ow
er
(dB
)
E-PlaneSimulation
Measurement
-90 -60 -30 0 30 60 90
-40
-30
-20
-10
0
Theta (degree)No
rmalized
Re
ce
ive
d P
ow
er
(dB
)
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Measurement Results: Radiated Power
• The measured radiated power is further verified by a photo-acoustic (TK) power meter with large aperture
22
Power
Supply
Function
Generator
VB
GND VCC
Trigger
TK Processing Unit
Signal
Heater PC
TK Powermeter
(30Hz)
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Comparison with the State-of-the-Arts in Silicon
• The achieved radiated power is 10x higher than prior silicon-based radiation sources in the mid-THz range
‒ 100x higher EIRP than prior arts
• Even larger scale with higher power should be possible
23
[RFIC 2017]
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Outline
Background
Homogeneous Array: 1-THz Radiation SourceMulti-Functional Mesh Structure
Chip Prototype in SiGe and Measurement Results
Heterogeneous Array: 220-to-320GHz Frequency-Comb SpectrometerHigh-Parallelism Architecture and THz Molecular Probing Module
Chip Prototype in CMOS and Measurement Results
Gas-Sensing Demonstration
Conclusion24
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Wave-Matter Interactions for Material Sensing
25
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THz Spectrometer for Gas Sensing
26
MoleculeFrequency
(GHz)Toxic? Flammable?
Carbon Monoxide (CO) 230.538001 Y Y
Sulfur Dioxide (SO2) 251.199668
Hydrogen Cyanide (HCN) 265.886441 Y
Hydrogen Sulfide (H2S) 300.511959 Y
Nitric Oxide (NO) 250.436966 Y
Nitrogen Dioxide (NO2) 292.987169 Y
Nitric Acid (HNO3) 256.657731 Y
Ammonia (NH3) 208.145904 Y
Carbonyl Sulfide (OCS) 231.060989 Y Y
Ethylene Oxide (C2H4O) 263.292515 Y
Acrolein (C3H4O) 267.279359 Y
Methyl Mercaptan (CH3SH) 227.564672 Y
Methyl Isocyanate (CH3NCO)
269.788609 Y
Methyl Chloride (CH3Cl) 239.187523 Y Y
Methanol (CH3OH) 250.507156 Y Y
Acetone (CH3COCH3) 259.6184 Y Y
Acrylonitrile (C2H3CN) 265.935603 Y Y
[Source: HITRAN.org]
0 0.3 0.6 0.9 1.2
40
60
80
100
Tra
ns
mit
tan
ce
(%
)
16O
12C
32S
Frequency (THz)
𝜸 =𝟐𝑱 + 𝟏 𝒉𝑩𝒆−𝒉𝑩𝑱(𝑱+𝟏)/𝒌𝑻
𝒌𝑻Absorption Intensity:
Quantum Number
J≈40
J=1
-5 50
Frequency Offset From
231.060983GHz (MHz)
100%
85%
70%
Wide Detection Range High Sensitivity High Selectivity
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Dual-THz-Comb Spectrometer
27
IF
f (GHz)220 320
Transmitter
f (GHz)220
Receiver
320
• Conventional single-tone sensing scheme– Bandwidth-efficiency tradeoff
– Long scanning time(~3 hours for 100-GHz bandwidth)
IFB,-n
~IFB,n-1 f (GHz)220 320 f (GHz)220 320
IFA,-n
~IFA,n-1
THz Comb A
Spectrum of Comb A Spectrum of Comb B
fIF
THz Comb B• Our scheme using bilateral THz
frequency combs– Each circuit block maintains peak
performance in a narrow band
– Simultaneous scanning using 20 comb lines(>20x increased speed)
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220-to-320GHz Comb-Based CMOS Spectrometer
28
Hemispheric
silicon lens
CMOS chip
[C. Wang and R. Han, IEEE ISSCC, Feb. 2017]
• 10 molecular-probing THz transceivers‒ Key technology: multi-function, energy-efficient electromagnetic structures
• Seamless coverage of the 220 to 320 GHz band with kHz resolution
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Operation of the Transceiver Unit Core
29
• Optimum device conditions created via a multi-functional EM structure‒ Slot 1: resonator at f0 and antenna at 2f0
‒ Slot 2: power recycle path at f0 and leakage blocker at 2f0
• Simultaneous transmit/receive function
[C. Wang and R. Han, IEEE JSSC, Dec. 2017]
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High-Parallelism Broadband Architecture
• The relaxed tunability requirement allows the introduction of device positive feedback and higher device gain
‒ 43% simulated doubler conversion efficiency
• The total spectral scanning time is reduced by more than 20x, leading to high energy efficiency
30
η=18%, w/o
feedback
η=43%, with DTL
feedback
η (%)
Gmax
Original Transistor (W/L=12µ/60n)
Transistor with
DTL Feedback
fmin fmax
Tim
e P
er
Sa
mp
le
fmin fmax
Ave
rag
e T
ime
Pe
r
Sa
mp
le
20x
Single-Tone Spectrometer Dual-Comb Spectrometer
CH
1
CH
2
CH
3
CH
4
CH
17
CH
18
CH
19
CH
20
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CMOS Chip Prototype
• TSMC 65nm bulk CMOS process (fmax=250GHz)‒ Chip area: 2×3mm2
• 10 transceivers (doubler+receiver+antenna), 9 mixers, 40 amplifiers, operating at 0.1~0.3 THz
‒ DC power: 1.7 W 31
3 mm
2m
m
Testing Board
WR-3 Even-Harmonic Mixer
Setup for Radiation Spectrum and Pattern Testing
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Experimental Results
32
Span=10kHz
RBW=10Hz
Antenna Pattern of One Line (265GHz)Average Phase Noise: -102dBc/Hz @ 1MHz
Measured Down-converted IF Spectra of all Comb Lines Spectrum of a Comb Line at 265GHz
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Experimental Results
33
• Total radiated power of the 10 comb lines: 5.2 mW– Highest in silicon
• Minimum detectable signal: 0.1 fW (-130 dBm) @ τ=1 ms
Effective Isotopically-Radiated PowerNoise Figure of Each Channel
(SSB, Antenna Loss Included) This work
TST
2016
On-wafer measured with an
assumed 50% radiation efficiency Radiated
RFIC
2016
RFIC
2015
ISSCC
2015
ISSCC
20161
PBW
JSSC
2013
TST
2015MTT
2012
CSICS
2012 ISSCC
2016
ISSCC
2015
This work
TST
2016
On-wafer measured with an
assumed 50% radiation efficiency Radiated
RFIC
2016
RFIC
2015
ISSCC
2015
ISSCC
20161
PBW
JSSC
2013
TST
2015MTT
2012
CSICS
2012 ISSCC
2016
ISSCC
2015
This work
TST
2016
On-wafer measured with an
assumed 50% radiation efficiency Radiated
RFIC
2016
RFIC
2015
ISSCC
2015
ISSCC
20161
PBW
JSSC
2013
TST
2015MTT
2012
CSICS
2012 ISSCC
2016
ISSCC
2015
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Spectroscopy Demonstration
• Low pressure is applied to eliminate the spectral broadening due to the inter-molecular collisions
• Wavelength modulation is used to reduce the impacts of the standing wave inside the gas chamber 34
Comb A Comb BGas Chamber
fIF
fm 2fm
LNABPFDetector
IFi
L=70 cm, Pressure =3 Pa
WM input
fref+Δf/6·sin(2πfmt)
Signal SourceSignal Source
Lock-in amplifier
fref – fIF/6
GPIB
GPIB
fm
Laptop
fm
Output
Spectral
line
Freq
Am
pli
tud
e
Time
Time
Acetonitrile (CH3CN)
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Spectroscopy Results
• Sensitivity: 11 ppm for OCS, 14 ppm for CH3CN, 3 ppm for HCN…
‒ 10-100 ppt with standard gas pre-concentration
• Any polar molecule heavier than HCN can be detected
• Spectral linewidth is ~1MHz, leading to absolute specificity
O C S
CH3CN
CH3CN
OCS
SNR Pressure
BW=78Hz
279.6825 279.6840 279.6855 279.6870
-4
-2
0
2
4
1st-
Ord
er
De
riv
ati
ve o
f T
ran
sm
iss
ion
(a
.u.)
Frequency (GHz)
-45
0
45
90
135
180
225
Ph
as
e S
hift (D
eg
ree)
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Conclusions• Using CMOS/BiCMOS device technologies not only enables “THz
frontend + analog/digital baseband” integration, but may also directly enhance the THz-circuit performance
‒ Homogeneous arrays: high-density coherent wave interference Large total radiated power
Ultra-narrow beam generation
‒ Heterogeneous arrays: high-parallelism EM spectral sensing Broadband coverage
Optimal energy efficiency
• Key technology: versatile THz circuits with multi-functional structures
36
A unified design framework:device, circuit, electromagnetism and architecture, all rolled into one
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Acknowledgement
• Other Group Members:M. Kim, M. Ibrahim, M. I. Khan,
X. Yi, J. Mawdesley, J. Maclver, Z. Wang
• Collaborators:B. Perkins (MIT Lincoln Lab), S. Coy (MIT),
Q. Hu (MIT), M. Kaynak (IHP)
37
• Sponsors:
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Large-Scale Terahertz Active Arrays in Silicon Using Highly-Versatile
Electromagnetic StructuresCheng Wang, Zhi Hu, Guo Zhang,Jack Holloway and Ruonan Han
Dept. of Electrical Engineering and Computer ScienceMicrosystem Technology LaboratoriesMassachusetts Institute of Technology