memristor - yonsei universitytera.yonsei.ac.kr/class/2011_1/lecture/20110413_pre7... ·...
TRANSCRIPT
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School of electrical & electronics engineering.
Yonsei University. Undergraduate 8th semester
Ki joon, Chang
Memristor - Finding missing links -
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CONTENTS
1. Getting started
2. What’s the meaning of missing links?
3. The properties of Memristance
4. Characteristics
5. TiOx based Memristor
6. Future of Memristor
7. Question session
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Part 1. Getting Started
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Getting Started
Have you seen this picture before?
Sung-Mo "Steve" Kang
Chancellor / Professor, School of Engineering, UC Merced
Research Area
* Low power/large-scale integration design
* Mixed-signal, mixed-technology integrated systems
* Modeling and simulation of semiconductor devices and circuits
* High-speed optoelectronic circuits and optical network systems
* Nanoelectronics
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Part 2. What’s the meaning of missing link?
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What’s the meaning of missing link?
Q
Φ
I
V
dV = R di
dq = i dt
dq = C dV
dΦ = V dt
dΦ = L di ??
Memristance (M),
Memory + resistance
dΦ = M dq
New property!
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What’s the meaning of missing link?
Ohm
(1827)
Faraday
(1831)
Von Kleist
(1745)
L. Chua
(1971)
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Part 3. The properties of Memristance
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The properties of Memristance
a. Memristor theory was formulated by Leon Chua in a 1971 paper.
b. ‘Φ’ means magnetic flux leakage (not magnetic field!)
c. By this derivation, the new property ‘M’ stands for ‘charge dependent resistance’. d. Operation as a switch (similar operation to CMOS)
𝑃𝑠𝑤𝑖𝑡𝑐ℎ t = 𝐼 𝑡 2𝑀 𝑞 𝑡 = 𝑉2 𝑑𝑡
𝑀(𝑞 𝑡 )
𝑄𝑜𝑛𝑄𝑜𝑓𝑓
=
𝑉2 𝑑𝑞
𝐼 𝑞 𝑀(𝑞)= 𝑉2
𝑑𝑞
𝑉(𝑞)
𝑄𝑜𝑛𝑄𝑜𝑓𝑓
= 𝑉∆𝑄 = 𝑉(𝑄𝑜𝑛 − 𝑄𝑜𝑓𝑓𝑄𝑜𝑛𝑄𝑜𝑓𝑓
)
e. Unlike the transistor, the final state of the Memristor in terms of charge does not
depend on bias voltage. (Non-volatile characteristic)
M(q) = dΦ / dq M(q(t)) = dΦ/dt / dq/dt = V / I (Ohm’s Law)
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Part 4. Characteristics
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Characteristics
a. Candidates for universal memory
b. Migration to the “Non-volatile architecture”
Reduce power consumption fro Flip-Flops(FFs) and registers
Reduce transmission power loss
Reduce static power – in idle mode (no need to refresh)
c. Memristor can resolve conventional limitation of the past NV architecture.
Block access requirements
Long read/write times
Access penalty for multilevel cell
d. Many experts expects that Memrisitive device will be rival against 20-nm CMOS
technology.
e. TiOx(Titanium Oxide) or Amorphous-Si are most famous.
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Characteristics
• Less Write/Erase/Read speed (less than 10ns)
• Data holding time is approximately, 7 year
NV characteristic, Resistive RAM
• ON/OFF ratio (>1000000)
In CMOS case, on/off ratio is less than 1000,
better characteristic!
• Scaling potential = less than 30nm
• Endurance >100000 cycles
200nm p-Si Memristor nanowire, Crossbar junctions >>
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Part 5. TiOx based Memristor
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TiOx based Memristor
When a positive bias voltage is applied to electrode 2, the
positively charged O vacancies drift to the left, which
narrows the tunneling gap.
See this Video,
(brief explanation)
Figure. Stacked structure of TiOx Memristor
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Part 6. Future of the Memristor
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Future of the Memristor
• Migration to other phase
• CMOS - Memristor Hybrid circuit
• Another application (Neuromorphic etc.)
CURRENT Phase
On Going
<SEM image of a 1 kb crossbar array,
based on the Ag/a-Si/Ni Memristor structure.
Scale bar: 2 μm>
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Future of the Memristor
a. Bio-inspired super-computing systems : DARPA SyNAPSE project (2008)
b. A synapse is essentially a two-terminal device and bears striking resemblance to the
memristor.
<Schematic of a Hybrid CMOS neuron/memristor synapse circuit approach for neuromorphic systems>
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c. HP(Hewlett – Peckard) collaborate with Hynix Semiconductor to bring in the first
commercial Memristive device to the market.(31 Aug, 2010, until 2013)
Future of the Memristor
<This colorized atomic-force microscopy image
shows 17 TiOx memristors. The circuit elements,
shown in green, are formed at the crossroads of
metal nanowires. - HP>
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Part 7. Q & A session
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Thank you!
Any Questions?