method for preferential growth of semiconducting verticall
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University of Dayton Office of Technology Partnerships
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Method For Preferential Growth Of Semiconducting Verticall Y Aligned Single Walled Carbon Nanotubes Case #: UD-500
US Patent Serial #: 12/511,517
Inventor: Liming Dai, et. al.
Overview: Carbon nanotubes can be conceptually viewed as a grapheme sheet rulled up into a nanoscale
tube form to produce the single-walled carbon nanotubes (SWNTs). There may be additional
graphene tubes around the core of a SWNT to form multiwallcd carbon nanotubes (MWNTs).
Depending on their diameter and helicity of the arrangement of carbon atoms in the nanotube
