mosfet - farnell element14 · 5 optimostm5 power-mosfet, 25 v bsc009ne2ls5i final data sheet rev....

MOSFETMetalOxideSemiconductorFieldEffectTransistor

OptiMOSTM

OptiMOSTM5Power-MOSFET,25VBSC009NE2LS5I

DataSheetRev.2.0Final

PowerManagement&Multimarket

2

OptiMOSTM5Power-MOSFET,25V

BSC009NE2LS5I

Rev.2.0,2015-03-10Final Data Sheet

12

34

56

78

43

21

56

78

SuperSO8

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

1DescriptionFeatures•Optimizedforhighperformancebuckconverters•MonolithicintegratedSchottkylikediode•Verylowon-resistanceRDS(on)@VGS=4.5V•100%avalanchetested•N-channel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 25 V

RDS(on),max 0.95 mΩ

ID 100 A

QOSS 27 nC

QG(0V..4.5V) 17 nC

Type/OrderingCode Package Marking RelatedLinksBSC009NE2LS5I PG-TDSON-8 09NE2L5I -

1) J-STD20 and JESD22

3


BSC009NE2LS5I


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID

-----

-----

10010010010040

A

VGS=10V,TC=25°CVGS=10V,TC=100°CVGS=4.5V,TC=25°CVGS=4.5V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W1)

Pulsed drain current2) ID,pulse - - 400 A TC=25°C

Avalanche current, single pulse3) IAS - - 50 A TC=25°C

Avalanche energy, single pulse EAS - - 50 mJ ID=50A,RGS=25Ω

Gate source voltage VGS -16 - 16 V -

Power dissipation Ptot--

--

742.5 W TC=25°C

TA=25°C,RthJA=50K/W1)

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

3Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 1.7 K/W -

Thermal resistance, junction - case,top RthJC - - 20 K/W -

Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See figure 3 for more detailed information3) See figure 13 for more detailed information

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BSC009NE2LS5I


4Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=1mA

Breakdown voltage temperaturecoefficient dV(BR)DSS/dTj - 15 - mV/K ID=10mA,referencedto25°C

Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250µA

Zero gate voltage drain current IDSS --

-3

0.5- mA VDS=20V,VGS=0V,Tj=25°C

VDS=20V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

1.050.80

1.350.95 mΩ VGS=4.5V,ID=30A

VGS=10V,ID=30A

Gate resistance RG - 1.1 1.8 Ω -

Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=30A

Table5DynamiccharacteristicsValues


Input capacitance1) Ciss - 2400 3200 pF VGS=0V,VDS=12V,f=1MHz

Output capacitance1) Coss - 1400 1900 pF VGS=0V,VDS=12V,f=1MHz

Reverse transfer capacitance Crss - 130 - pF VGS=0V,VDS=12V,f=1MHz

Turn-on delay time td(on) - 5 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω

Rise time tr - 5 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω

Turn-off delay time td(off) - 27 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω

Fall time tf - 4 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω

1) Defined by design. Not subject to production test

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Table6Gatechargecharacteristics1)Values


Gate to source charge Qgs - 5.7 - nC VDD=12V,ID=30A,VGS=0to4.5V

Gate charge at threshold Qg(th) - 3.9 - nC VDD=12V,ID=30A,VGS=0to4.5V

Gate to drain charge Qgd - 4.3 - nC VDD=12V,ID=30A,VGS=0to4.5V

Switching charge Qsw - 6.1 - nC VDD=12V,ID=30A,VGS=0to4.5V

Gate charge total Qg - 17 23 nC VDD=12V,ID=30A,VGS=0to4.5V

Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=30A,VGS=0to4.5V

Gate charge total Qg - 36 49 nC VDD=12V,ID=30A,VGS=0to10V

Gate charge total, sync. FET Qg(sync) - 15 - nC VDS=0.1V,VGS=0to4.5V

Output charge Qoss - 27 - nC VDD=12V,VGS=0V

Table7ReversediodeValues


Diode continuous forward current IS - - 74 A TC=25°C

Diode pulse current IS,pulse - - 400 A TC=25°C

Diode forward voltage VSD - 0.48 0.62 V VGS=0V,IF=11A,Tj=25°C

Reverse recovery charge Qrr - 5 - nC VR=15V,IF=12A,diF/dt=400A/µs

1) See ″Gate charge waveforms″ for parameter definition

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BSC009NE2LS5I


5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 40 80 120 1600

10

20

30

40

50

60

70

80

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 40 80 120 1600

20

40

60

80

100

120

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs

10 µs100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-1 10010-3

10-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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BSC009NE2LS5I


Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 2 30

100

200

300

400

500

600

700

800

4 V

4.5 V

5 V10 V

3.5 V

3.2 V

3 V

2.8 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 10 20 30 40 500.0

0.5

1.0

1.5

2.0

3.2 V

3.5 V

4 V

4.5 V5 V

7 V 8 V10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 1 2 3 4 50

80

160

240

320

400

150 °C 25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 100 200 300 4000

200

400

600

800

1000

gfs=f(ID);Tj=25°C

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BSC009NE2LS5I


Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

typ

RDS(on)=f(Tj);ID=30A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

10 mA

VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 5 10 15 20 25101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.4 0.8 1.210-1

100

101

102

103

-55 °C25 °C125 °C150 °C

IF=f(VSD);parameter:Tj

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BSC009NE2LS5I


Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

25 °C

100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 400

2

4

6

8

10

12

20 V

12 V

5 V

VGS=f(Qgate);ID=30Apulsed;parameter:VDD

Diagram15:Typ.drain-sourceleakagecurrent

VDS[V]

IDSS[A

]

0 5 10 15 2010-6

10-5

10-4

10-3

10-2

125 °C

100 °C

75 °C

25 °C

IDSS=f(VDS);VGS=0V;parameter:Tj

Gate charge waveforms

11


BSC009NE2LS5I


6PackageOutlines

Figure1OutlinePG-TDSON-8,dimensionsinmm

12


BSC009NE2LS5I


Dimension in mm

Figure2OutlineTDSON-8Tape

13


BSC009NE2LS5I


RevisionHistoryBSC009NE2LS5I

Revision:2015-03-10,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2015-03-10 Release of final version

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PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

mosfet - farnell element14 · 5 optimostm5 power-mosfet, 25 v bsc009ne2ls5i final data sheet rev....

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