mosis tsmc 0.35um hi-esd pad - auburn universitynelson/courses/elec5250_6250... · non-disclosure...

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Consulting & Engineering Services www.tanner.com/ces CE-LI-CC- IOmosis35 2650 East Foothill Blvd. Pasadena, CA 91107 USA Tel: (626) 792-3000 Fax: (626) 792-0300 [email protected] The MOSIS Service Hi-ESD Pad Library TSMC CMOS (0.35μ) Process June 1999 Tanner Consulting & Engineering Services develops and delivers advanced ASIC and VLSI solutions for customers. We accomplish this through training programs, consulting services, field engineering and contracted design/development efforts. Copyright © 1999 by Tanner Research, Inc. All rights reserved

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Page 1: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

Consulting & Engineering Serviceswww.tanner.com/ces

CE-LI-CC-IOmosis35

2650 East Foothill Blvd.Pasadena, CA 91107 USATel: (626) 792-3000Fax: (626) [email protected]

The MOSIS Service

Hi-ESD Pad Library

TSMC CMOS (0.35µµ) ProcessJune 1999

Tanner Consulting & Engineering Servicesdevelops and delivers advanced ASIC and VLSI solutions for customers.

We accomplish this through training programs, consulting services,field engineering and contracted design/development efforts.

Copyright © 1999 by Tanner Research, Inc. All rights reserved

Page 2: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

Consulting & Engineering Serviceswww.tanner.com/ces

CE-LI-PR-CE

TANNER CES GENERAL TERMS & CONDITIONSLiability

All designs will be implemented under the Client’s front-end specification. Our contracted engineering services are accomplished for theClient on a best effort basis. Quality assurance is achieved by arriving at a common understanding of the nature of the Project among the

engineers and managers at the Client operation and at Tanner CES. Tanner Research is not liable for the functionality, quality, orperformance of the Client’s future Projects using components produced as part of the contracted work. Tanner Research is not liable if

the Client chooses to use our recommended design or application methodologies. If prototype chips are delivered, the process vendors donot generally guarantee yield, quality, or performance of their products. Neither does Tanner Research extend any warrantee to the

contracted design and its fabricated results.

Non-Disclosure Agreement

Non-disclosure agreements (NDAs) serve the following purposes.

oo Signed between the Client and Tanner Research, the NDA protects Client’s original concept, status, and intentions in currentand future product development and manufacturing.

oo Signed between the Client and Tanner Research, the NDA protects Tanner Research’ specific technologies, IC libraries,building blocks and methodologies that are developed prior to the Client Project, or developed specifically for the Clientapplication.

oo Specific non-disclosure or non-distribution conditions may be added to the Statement of Work for individual Client Projects.These conditions do not replace or supercede any previously signed NDA; rather they serve as additional constraints to theNDA.

oo During or at the end of the Client Project, if we communicate with a process vendor or receive fabricated parts from aprocess vendor which will be forwarded to the Client, we assume that the Client is also a current customer of the vendor. Wemay request Client to provide a proof of its NDA with the vendor before any such communication or transaction.

Ownership of Work Results

The Client owns the delivered version and the fabricated version of the work results from a contracted Client Project. Theseresults are subject to the following re-distribution conditions:

oo The Client agrees to use the work results only in its own Projects or products, as developed by the Client and on the Client’sown site.

oo The Client will not distribute copies of the delivered data files and documents (such as design, libraries, process technologysetups, design flows and methodologies, software utilities, etc.) to any third parties or to any other Client site, with thefollowing two exceptions:

Exception 1: If applicable, results can be delivered to the Government Agency sponsoring the Client Project, if such deliveryis negotiated as part of the Client Project. During contract negotiations, the Client shall inform Tanner Research aboutsuch a delivery and receive advance agreement from us for the contents to be disclosed.

Exception 2: If applicable, results can be incorporated into published academic research or presented for academic purposes.During contract negotiation, the Client shall inform Tanner Research about such a presentation and receive advancedagreement from us for the contents to be disclosed.

Any other exceptions shall be specified in a written document signed by both the Client and Tanner Research.

Tanner Research does not own the original design and application concepts from the Client. We agree not to disclose the Client’sproprietary design and applications information. However, we shall distinguish the following items that remain the property ofTanner Research:

oo The methodology used through the development of the Client Project, or that we planned for Client to apply the Project’sresults, are usually either common knowledge in the industry or specific methods invented by Tanner Research. Using oradopting these methodologies in the Client Project does not institute the Client’s ownership to these methodologies.

oo Client does not own Tanner Research’s general-purpose building elements (such as cell libraries, building blocks, IO padcells, etc.) that we utilize in a contracted Project. These building elements are Tanner Research’s current design resourcesthat are widely used internally and/or distributed as commercial products. Using these building elements does not institutethe Client’s ownership of them.

Protect Tanner Research’s Engineering Resources

Through the entire Client Project cycle, starting from bid and proposal to the end of the Project, the Client will contact variousengineering resources within Tanner Research. These resources may include Tanner Research’s employees and its associates

(subcontracting firms or individuals). The Client agrees not to recruit or hire any of these individuals or contract with any firms duringthe three years following Project completion.

ooþþ

Page 3: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

LOGIC

NMOS

PMOS

ESD

ESD

A

A B

B C

C D

D E

E F

F

1 1

22

3 3

44

5 5

G

G

Size: 5x7

Rev A

Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2

Module:Pad_Frame Page:Page0

Designer:Victor Dinh

Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set

Modified:Jun 15, 1999 13:36:11Created:Nov 9, 1998 15:15:18

Tel: (626)792-3000

2650 East Foothill Blvd, Pasadena, CA 91107Fax: (626)792-0300

0.9 mm

(4500 lambda)

0.9 mm(4500 lambda)

(450 lambda)pitch = 0.09 mm

1.5 mm(7500 lambda)

1.5 mm

(7500 lambda)

MOSIS TSMC/HP 0.35umHi-ESD Minimum Pad Frame

(1) lambda = 0.20um

Size: 5x7Created:Nov 9, 1998 15:15:18Modified:Jun 15, 1999 13:36:11

Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set

Designer:Victor Dinh

Page:Page0Module:Pad_Frame

Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2

Rev A

Fax: (626)792-03002650 East Foothill Blvd, Pasadena, CA 91107

Tel: (626)792-3000

Page 4: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

Tel: (626)792-3000

2650 East Foothill Blvd, Pasadena, CA 91107Fax: (626)792-0300

Rev A

Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2

Module:Pad_Dimension Page:Page0

Designer:Victor Dinh

Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set

Modified:Jun 15, 1999 13:34:21Created:Nov 9, 1998 13:20:00

A

A B

B C

C D

D E

E F

F

1 1

22

3 3

44

5 5

G

G

Size: 5x7

231 micron

46 micron

90 micron

(450 lambda)300 micron

78 micron

(390 lambda)

78 micron

60 micron

(300 lambda)

(1) lambda = 0.20um

Hi-ESD Pad DimensionsMOSIS TSMC/HP 0.35um

(230 lambda)

(1155 lambda)

(1500 lambda)

(390 lambda)

BONDINGPAD

ESD TRANSISTORPMOS

PADLOGIC

ESD TRANSISTORNMOS

60 micron

LOGICPAD

NMOSESD TRANSISTOR

ESD TRANSISTORPMOS

pitch = 90 micron

(300 lambda)

PADBONDING

(300 lambda)

Fax: (626)792-03002650 East Foothill Blvd, Pasadena, CA 91107

Tel: (626)792-3000

Created:Nov 9, 1998 13:20:00Modified:Jun 15, 1999 13:34:21

Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set

Designer:Victor Dinh

Page:Page0Module:Pad_Dimension

Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2

Rev A

Size: 5x7

Page 5: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADLIB

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Library PADLIB

Description: Pad Library

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: Library

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: Lib_Pads

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A N/A

Height Width Area Equivalent Gate DriveN/A N/A N/A N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

Page 6: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADLIB

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Library PADLIB

This page is intentionally left blank.

Page 7: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADLIB

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Library Schematic PADLIB

Hi-ESD IO PAD SET

Inpu

t Pa

d wi

th B

uffe

r

Outp

ut P

ad w

ith

Buff

er

Vdd

Pad

with

ESD

Gnd

Pad

with

ESD

Anal

og R

efer

ence

Pad

wit

h ES

DAn

alog

IO

Pad

with

ESD

MOSIS TSMC 0.35um - Submicron Rules

PadOut_SCMOS

PadInC_SCMOS

PadVdd

PadGnd

PadIO

PadARef

DIB

DIDI_UNBUF

IPadC

PAD

DO

OPad

PAD

Page 8: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADLIB

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Library Layout PADLIB

Page 9: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFRAME

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame PADFRAME

Description: Pad Frame

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035.tdbCell: FRAME

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A N/A

Height Width Area Equivalent Gate Drive1.5 mm 1.5 mm 2.25 mm2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

Page 10: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFRAME

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame PADFRAME

This page is intentionally left blank.

Page 11: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFRAME

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame Schematic PADFRAME

N/A

Page 12: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFRAME

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame Layout PADFRAME

Page 13: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADAREF

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Analog Ref Pad PADAREF

Description: Analog Reference Pad

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADAREF

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADAREF

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

PadARef

Page 14: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADAREF

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Analog Ref Pad PADAREF

This page is intentionally left blank.

Page 15: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADAREF

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Analog Ref Pad Schematic PADAREF

SIGNALSIGNAL

PadARef

L='3*l'M=16

TESDP W='175*l'

BONDING

PAD

L='3*l'M=16

TESDN W='175*l'

Page 16: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADAREF

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Analog Ref Pad Layout PADAREF

Page 17: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADBIDIR

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Bi-Directional Pad PADBIDIR

Description: Bi-Directional Pad with Buffer

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADBIDIR

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADBIDIR

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

See truth table

Delay Characteristics: N/A

PAD OE DI DOX 1 X In1 0 1 X0 0 0 X

PadBidirHE_SCMOS

Page 18: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADBIDIR

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Bi-Directional Pad PADBIDIR

This page is intentionally left blank.

Page 19: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADBIDIR

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Bi-Directional Pad Schematic PADBIDIR

EN

Data

Out

Pad

DataInB

DataIn

OEOE OEB

OEB

OEB

OEL=

'3*l

'T1

3bW=

'35*

l'

L='3

*l'

M=5

T3W=

'35*

l'

L='2

*l'

M=4

T5W=

'35*

l'

L='3

*l'

M=5

T6W=

'35*

l'L=

'3*l

'M=

14

TESD

N2W=

'175

*l'

L='3

*l'

M=6

T10

W='3

5*l'

L='3

*l'

M=6

T12

W='3

5*l'

L='2

*l'

T14b

W='3

5*l'

L='3

*l'

M=2

TESD

N1W=

'175

*l'

BOND

ING PAD

L='3

*l'

T13a

W='5

2*l'

L='3

*l'

M=5

T1W=

'52*

l'

L='3

*l'

M=4

T2W=

'52*

l'

L='3

*l'

M=5

T4W=

'52*

l'L=

'3*l

'M=

12

TESD

P2W=

'175

*l'

L='3

*l'

M=6

T9W=

'52*

l'L=

'3*l

'M=

6

T11

W='5

2*l'

L='3

*l'

T14a

W='5

2*l'

L='3

*l'

M=4

TESD

P1W=

'175

*l'

R1100

Page 20: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADBIDIR

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Bi-Directional Pad Layout PADBIDIR

Page 21: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFC

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame Corner PADFC

Description: Pad Frame Corner

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADFC

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A N/A

Height Width Area Equivalent Gate Drive300 µ 300 µ 90000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

Page 22: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFC

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame Corner PADFC

This page is intentionally left blank.

Page 23: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFC

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame Corner Schematic PADFC

N/A

Page 24: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADFC

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad Frame Corner Layout PADFC

Page 25: MOSIS TSMC 0.35um Hi-ESD Pad - Auburn Universitynelson/courses/elec5250_6250... · Non-Disclosure Agreement ... The Client agrees not to recruit or hire any of these individuals or

mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADGND

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Ground Pad PADGND

Description: Ground Pad

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADGND

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADGND

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

PadGnd

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADGND

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Ground Pad PADGND

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADGND

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Ground Pad Schematic PADGND

PadGnd

Pad

L='3*l'M=16

TESDP W='175*l'

BONDING

PAD

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADGND

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Ground Pad Layout PADGND

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADINC

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input Pad PADINC

Description: Buffered Input Pad with Complementary Signals

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADINC

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADINC

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

See truth table

Delay Characteristics:

PAD DI DIB0 0 11 1 0

Pad

DataInBPadInC_SCMOS

DataInPad

0.28nsTpd =

0.24nsTr =

0.18nsTf =

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADINC

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input Pad PADINC

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADINC

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input Pad Schematic PADINC

PadInC

DataInB

DataIn

Pad

Pad

PadBidirHE_SCMOS

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADINC

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input Pad Layout PADINC

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADIO

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input/Output Pad PADIO

Description: Input/Output Pad

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADIO

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADIO

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

PadIO

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADIO

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input/Output Pad PADIO

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADIO

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input/Output Pad Schematic PADIO

DATASIGNAL

PadIO

R1 100

L='3*l'M=16

TESDP W='175*l'

BONDING

PAD

L='3*l'M=16

TESDN W='175*l'

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADIO

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Input/Output Pad Layout PADIO

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADSPACE

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Padless Spacer PADSPACE

Description: Padless Spacer without Bonding Pad

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADSPACE

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADSPACE

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Padless Spacer PADSPACE

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADSPACE

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Padless Spacer Schematic PADSPACE

N/A

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADSPACE

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Padless Spacer Layout PADSPACE

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADNC

Page1 of 4

Copyright

Pad NoConnect PADNC

Description: Pad Spacer with No Connection to Bonding Pad

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADNC

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADNC

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad NoConnect PADNC

This page is intentionally left blank.

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADNC

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad NoConnect Schematic PADNC

N/A

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADNC

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Pad NoConnect Layout PADNC

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADOUT

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Output Pad PADOUT

Description: Output Pad with Buffer

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADOUT

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADOUT

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

Delay Characteristics:

PAD D00 01 1

DataOut Pad

PadOut_SCMOS

DataOutPad =

1.92nsTpd =

1.48nsTr =

1.23nsTf =

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADOUT

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Output Pad PADOUT

This page is intentionally left blank.

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADOUT

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Output Pad Schematic PADOUT

PadOut

DataOut

Pad

PadBidirHE_SCMOS

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADOUT

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Output Pad Layout PADOUT

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADVDD

Page1 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Power Pad PADVDD

Description: Power Pad

Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples

Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADVDD

Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADVDD

Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac

Logic Symbol Truth Table Capacitance

N/A N/A

Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A

Logic Equation

N/A

Delay Characteristics: N/A

PadVdd

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADVDD

Page2 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Power Pad PADVDD

This page is intentionally left blank.

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADVDD

Page3 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Power Pad Schematic PADVDD

PadVdd

PadBONDING

PAD

L='3*l'M=16

TESDN W='175*l'

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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library

Rev. APADVDD

Page4 of 4

Copyright 1999 by Tanner Research, Inc. All rights reserved.

Power Pad Layout PADVDD