mosis tsmc 0.35um hi-esd pad - auburn universitynelson/courses/elec5250_6250... · non-disclosure...
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Consulting & Engineering Serviceswww.tanner.com/ces
CE-LI-CC-IOmosis35
2650 East Foothill Blvd.Pasadena, CA 91107 USATel: (626) 792-3000Fax: (626) [email protected]
The MOSIS Service
Hi-ESD Pad Library
TSMC CMOS (0.35µµ) ProcessJune 1999
Tanner Consulting & Engineering Servicesdevelops and delivers advanced ASIC and VLSI solutions for customers.
We accomplish this through training programs, consulting services,field engineering and contracted design/development efforts.
Copyright © 1999 by Tanner Research, Inc. All rights reserved
Consulting & Engineering Serviceswww.tanner.com/ces
CE-LI-PR-CE
TANNER CES GENERAL TERMS & CONDITIONSLiability
All designs will be implemented under the Client’s front-end specification. Our contracted engineering services are accomplished for theClient on a best effort basis. Quality assurance is achieved by arriving at a common understanding of the nature of the Project among the
engineers and managers at the Client operation and at Tanner CES. Tanner Research is not liable for the functionality, quality, orperformance of the Client’s future Projects using components produced as part of the contracted work. Tanner Research is not liable if
the Client chooses to use our recommended design or application methodologies. If prototype chips are delivered, the process vendors donot generally guarantee yield, quality, or performance of their products. Neither does Tanner Research extend any warrantee to the
contracted design and its fabricated results.
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Non-disclosure agreements (NDAs) serve the following purposes.
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oo Client does not own Tanner Research’s general-purpose building elements (such as cell libraries, building blocks, IO padcells, etc.) that we utilize in a contracted Project. These building elements are Tanner Research’s current design resourcesthat are widely used internally and/or distributed as commercial products. Using these building elements does not institutethe Client’s ownership of them.
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ooþþ
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
LOGIC
NMOS
PMOS
ESD
ESD
A
A B
B C
C D
D E
E F
F
1 1
22
3 3
44
5 5
G
G
Size: 5x7
Rev A
Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2
Module:Pad_Frame Page:Page0
Designer:Victor Dinh
Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set
Modified:Jun 15, 1999 13:36:11Created:Nov 9, 1998 15:15:18
Tel: (626)792-3000
2650 East Foothill Blvd, Pasadena, CA 91107Fax: (626)792-0300
0.9 mm
(4500 lambda)
0.9 mm(4500 lambda)
(450 lambda)pitch = 0.09 mm
1.5 mm(7500 lambda)
1.5 mm
(7500 lambda)
MOSIS TSMC/HP 0.35umHi-ESD Minimum Pad Frame
(1) lambda = 0.20um
Size: 5x7Created:Nov 9, 1998 15:15:18Modified:Jun 15, 1999 13:36:11
Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set
Designer:Victor Dinh
Page:Page0Module:Pad_Frame
Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2
Rev A
Fax: (626)792-03002650 East Foothill Blvd, Pasadena, CA 91107
Tel: (626)792-3000
Tel: (626)792-3000
2650 East Foothill Blvd, Pasadena, CA 91107Fax: (626)792-0300
Rev A
Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2
Module:Pad_Dimension Page:Page0
Designer:Victor Dinh
Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set
Modified:Jun 15, 1999 13:34:21Created:Nov 9, 1998 13:20:00
A
A B
B C
C D
D E
E F
F
1 1
22
3 3
44
5 5
G
G
Size: 5x7
231 micron
46 micron
90 micron
(450 lambda)300 micron
78 micron
(390 lambda)
78 micron
60 micron
(300 lambda)
(1) lambda = 0.20um
Hi-ESD Pad DimensionsMOSIS TSMC/HP 0.35um
(230 lambda)
(1155 lambda)
(1500 lambda)
(390 lambda)
BONDINGPAD
ESD TRANSISTORPMOS
PADLOGIC
ESD TRANSISTORNMOS
60 micron
LOGICPAD
NMOSESD TRANSISTOR
ESD TRANSISTORPMOS
pitch = 90 micron
(300 lambda)
PADBONDING
(300 lambda)
Fax: (626)792-03002650 East Foothill Blvd, Pasadena, CA 91107
Tel: (626)792-3000
Created:Nov 9, 1998 13:20:00Modified:Jun 15, 1999 13:34:21
Info:MOSIS TSMC/HP 0.35um Hi-ESD IO Pad Set
Designer:Victor Dinh
Page:Page0Module:Pad_Dimension
Path:O:\ces_prjct\mosis\Pad025-035U\work_dir\layout_TSMC035\mlou\databook\HiESD_Pad2
Rev A
Size: 5x7
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADLIB
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Library PADLIB
Description: Pad Library
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: Library
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: Lib_Pads
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A N/A
Height Width Area Equivalent Gate DriveN/A N/A N/A N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADLIB
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Library PADLIB
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADLIB
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Library Schematic PADLIB
Hi-ESD IO PAD SET
Inpu
t Pa
d wi
th B
uffe
r
Outp
ut P
ad w
ith
Buff
er
Vdd
Pad
with
ESD
Gnd
Pad
with
ESD
Anal
og R
efer
ence
Pad
wit
h ES
DAn
alog
IO
Pad
with
ESD
MOSIS TSMC 0.35um - Submicron Rules
PadOut_SCMOS
PadInC_SCMOS
PadVdd
PadGnd
PadIO
PadARef
DIB
DIDI_UNBUF
IPadC
PAD
DO
OPad
PAD
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADLIB
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Library Layout PADLIB
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFRAME
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame PADFRAME
Description: Pad Frame
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035.tdbCell: FRAME
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A N/A
Height Width Area Equivalent Gate Drive1.5 mm 1.5 mm 2.25 mm2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFRAME
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame PADFRAME
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFRAME
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame Schematic PADFRAME
N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFRAME
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame Layout PADFRAME
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADAREF
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Analog Ref Pad PADAREF
Description: Analog Reference Pad
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADAREF
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADAREF
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
PadARef
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADAREF
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Analog Ref Pad PADAREF
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADAREF
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Analog Ref Pad Schematic PADAREF
SIGNALSIGNAL
PadARef
L='3*l'M=16
TESDP W='175*l'
BONDING
PAD
L='3*l'M=16
TESDN W='175*l'
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADAREF
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Analog Ref Pad Layout PADAREF
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADBIDIR
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Bi-Directional Pad PADBIDIR
Description: Bi-Directional Pad with Buffer
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADBIDIR
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADBIDIR
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
See truth table
Delay Characteristics: N/A
PAD OE DI DOX 1 X In1 0 1 X0 0 0 X
PadBidirHE_SCMOS
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADBIDIR
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Bi-Directional Pad PADBIDIR
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADBIDIR
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Bi-Directional Pad Schematic PADBIDIR
EN
Data
Out
Pad
DataInB
DataIn
OEOE OEB
OEB
OEB
OEL=
'3*l
'T1
3bW=
'35*
l'
L='3
*l'
M=5
T3W=
'35*
l'
L='2
*l'
M=4
T5W=
'35*
l'
L='3
*l'
M=5
T6W=
'35*
l'L=
'3*l
'M=
14
TESD
N2W=
'175
*l'
L='3
*l'
M=6
T10
W='3
5*l'
L='3
*l'
M=6
T12
W='3
5*l'
L='2
*l'
T14b
W='3
5*l'
L='3
*l'
M=2
TESD
N1W=
'175
*l'
BOND
ING PAD
L='3
*l'
T13a
W='5
2*l'
L='3
*l'
M=5
T1W=
'52*
l'
L='3
*l'
M=4
T2W=
'52*
l'
L='3
*l'
M=5
T4W=
'52*
l'L=
'3*l
'M=
12
TESD
P2W=
'175
*l'
L='3
*l'
M=6
T9W=
'52*
l'L=
'3*l
'M=
6
T11
W='5
2*l'
L='3
*l'
T14a
W='5
2*l'
L='3
*l'
M=4
TESD
P1W=
'175
*l'
R1100
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADBIDIR
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Bi-Directional Pad Layout PADBIDIR
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFC
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame Corner PADFC
Description: Pad Frame Corner
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADFC
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A N/A
Height Width Area Equivalent Gate Drive300 µ 300 µ 90000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFC
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame Corner PADFC
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFC
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame Corner Schematic PADFC
N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADFC
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad Frame Corner Layout PADFC
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADGND
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Ground Pad PADGND
Description: Ground Pad
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADGND
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADGND
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
PadGnd
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADGND
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Ground Pad PADGND
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADGND
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Ground Pad Schematic PADGND
PadGnd
Pad
L='3*l'M=16
TESDP W='175*l'
BONDING
PAD
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADGND
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Ground Pad Layout PADGND
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADINC
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input Pad PADINC
Description: Buffered Input Pad with Complementary Signals
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADINC
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADINC
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
See truth table
Delay Characteristics:
PAD DI DIB0 0 11 1 0
Pad
DataInBPadInC_SCMOS
DataInPad
0.28nsTpd =
0.24nsTr =
0.18nsTf =
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADINC
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input Pad PADINC
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADINC
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input Pad Schematic PADINC
PadInC
DataInB
DataIn
Pad
Pad
PadBidirHE_SCMOS
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADINC
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input Pad Layout PADINC
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADIO
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input/Output Pad PADIO
Description: Input/Output Pad
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADIO
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADIO
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
PadIO
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADIO
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input/Output Pad PADIO
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADIO
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input/Output Pad Schematic PADIO
DATASIGNAL
PadIO
R1 100
L='3*l'M=16
TESDP W='175*l'
BONDING
PAD
L='3*l'M=16
TESDN W='175*l'
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADIO
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Input/Output Pad Layout PADIO
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADSPACE
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Padless Spacer PADSPACE
Description: Padless Spacer without Bonding Pad
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADSPACE
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADSPACE
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Copyright 1999 by Tanner Research, Inc. All rights reserved.
Padless Spacer PADSPACE
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADSPACE
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Padless Spacer Schematic PADSPACE
N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADSPACE
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Padless Spacer Layout PADSPACE
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADNC
Page1 of 4
Copyright
Pad NoConnect PADNC
Description: Pad Spacer with No Connection to Bonding Pad
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: N/A
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADNC
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADNC
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad NoConnect PADNC
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADNC
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad NoConnect Schematic PADNC
N/A
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADNC
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Pad NoConnect Layout PADNC
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADOUT
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Output Pad PADOUT
Description: Output Pad with Buffer
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADOUT
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADOUT
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
Delay Characteristics:
PAD D00 01 1
DataOut Pad
PadOut_SCMOS
DataOutPad =
1.92nsTpd =
1.48nsTr =
1.23nsTf =
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADOUT
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Output Pad PADOUT
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADOUT
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Output Pad Schematic PADOUT
PadOut
DataOut
Pad
PadBidirHE_SCMOS
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADOUT
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Output Pad Layout PADOUT
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADVDD
Page1 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Power Pad PADVDD
Description: Power Pad
Library: MOSIS TSMC 035P Primitive Set: Tanner SCMOS.Cells Tanner.TIB.Samples
Schematic: S-Edit File: TannerLb\scmos\mTSMs035P.sdbModule: PADVDD
Mask layout: L-Edit File: TannerLb\scmos\mTSMs035P.tdbCell: PADVDD
Mapping Macros: GateSim: TannerLb\nettran\scmos\scms2sim.mac L-Edit/SPR: TannerLb\nettran\scmos\scms2tpr.mac
Logic Symbol Truth Table Capacitance
N/A N/A
Height Width Area Equivalent Gate Drive300 µ 90 µ 27000 µ2 N/A N/A
Logic Equation
N/A
Delay Characteristics: N/A
PadVdd
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADVDD
Page2 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Power Pad PADVDD
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mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADVDD
Page3 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Power Pad Schematic PADVDD
PadVdd
PadBONDING
PAD
L='3*l'M=16
TESDN W='175*l'
mTSMs035P – MOSIS TSMC 0.35µµmHi-ESD Pad Cell Library
Rev. APADVDD
Page4 of 4
Copyright 1999 by Tanner Research, Inc. All rights reserved.
Power Pad Layout PADVDD