n- and p-channel enhancement mode mosfet mtc1016c6ftp01.cystekec.com/mtc1016c6.pdf · 2018. 11....

CYStech Electronics Corp.

Spec. No. : C392C6 Issued Date : 2018.11.13 Revised Date : Page No. : 1/ 12

MTC1016C6 CYStek Product Specification

N- AND P-Channel Enhancement Mode MOSFET

MTC1016C6

Features • Low on-resistance

• ESD protected gate

• High speed switching

• Low-voltage drive

• Pb-free lead plating and halogen-free package

Equivalent Circuit Outline

Ordering Information

Device Package Shipping

MTC1016C6-0-T1-G SOT-563

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

SOT-563

MTC1016C6

Tr1 Tr2

N-CH P-CH

BVDSS 20V -20V

ID @VGS=(-)4.5V, TA=25°C 0.57A -0.4A

RDSON(typ.) @VGS=(-)4.5V 0.30Ω 0.61Ω

RDSON(typ.) @VGS=(-)2.5V 0.43Ω 1.06Ω

RDSON(typ.) @VGS=(-)1.8V 0.63Ω 1.41Ω

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

D1 G2 S2

S1 G1 D2




The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (TA=25C, unless otherwise noted)

Parameter Symbol Limits

Unit N-channel P-channel

Drain-Source Breakdown Voltage BVDSS 20 -20 V

Gate-Source Voltage VGS ±8 ±8

Continuous Drain Current @TA=25 C, VGS=4.5V(-4.5V) ID

0.57 -0.40

A Continuous Drain Current @TA=70 C, VGS=4.5V(-4.5V) 0.46 -0.32

Pulsed Drain Current (Note 1) IDM 3.4 -1.7

Power Dissipation @TA=25°C PD

0.15 W

Power Dissipation @TA=70°C 0.1

Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 C

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3.Surface mounted on minimum pad of FR-4 board, t≤5s.

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Rth,ja 833 C/W

Note : Surface mounted on minimum pad of FR-4 board, t≤5s.

N-Channel Electrical Characteristics (Tj=25C, unless otherwise noted)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS 20 - - V

VGS=0V, ID=250μA

VGS(th) 0.5 - 1.2 VDS=VGS, ID=250μA

IGSS - - ±5

μA

VGS=±8V, VDS=0V

IDSS - - 1 VDS=20V, VGS=0V

- - 10 VDS=16V, VGS=0V (Tj=70C)

*RDS(ON)

- 0.30 0.40

VGS=4.5V, ID=600mA

- 0.43 0.65 VGS=2.5V, ID=400mA

- 0.63 1.07 VGS=1.8V, ID=350mA

*GFS - 1.1 - S VDS=10V, ID=400mA

Dynamic

Ciss - 58.5 -

pF VDS=16V, VGS=0V, f=1MHz Coss - 12.3 -

Crss - 7.8 -

td(ON) - 6 -

ns VDS=10V, ID=250mA, VGS=4.5V,

RG=10Ω

tr - 6 -

td(OFF) - 26 -

tf - 20 -




Qg - 0.79 -

nC VDS=10V, ID=250mA, VGS=4.5V Qgs - 0.09 -

Qgd - 0.27 -

Source-Drain Diode

*IS - - 0.57 A

*ISM - - 2.3

*VSD - 0.75 1.0 V VGS=0V, IS=150mA

*Pulse Test : Pulse Width 300μs, Duty Cycle2%

P-Channel Electrical Characteristics (Tj=25C, unless otherwise noted)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS -20 - - V

VGS=0V, ID=-250μA

VGS(th) -0.5 - -1.2 VDS=VGS, ID=-250μA

IGSS - - ±5

μA

VGS=±8V, VDS=0V

IDSS - - -1 VDS=-20V, VGS=0V

- - -10 VDS=-16V, VGS=0V (Tj=70C)

*RDS(ON)

- 0.61 0.83

VGS=-4.5V, ID=-430mA

- 0.65 0.96 VGS=-4V, ID=-300mA

- 1.06 1.60 VGS=-2.5V, ID=-300mA

- 1.41 2.40 VGS=-1.8V, ID=-10mA

*GFS - 0.7 - S VDS=-10V, ID=-250mA

Dynamic

Ciss - 54.7 -

pF VDS=-16V, VGS=0V, f=1MHz Coss - 16.6 -

Crss - 11.9 -

td(ON) - 6 -

ns VDS=-10V, ID=-250mA, VGS=-4.5V,

RG=10Ω

tr - 10 -

td(OFF) - 23 -

tf - 28 -

Qg - 1.13 -

nC VDS=-10V, ID=-250mA, VGS=-4.5V Qgs - 0.09 -

Qgd - 0.42 -

Source-Drain Diode

*IS - - -0.4 A

*ISM - - -1.7

*VSD - -0.78 -1.2 V VGS=0V, IS=-150mA




N-Channel Typical Characteristics

Typical Output Characteristics

0.0

0.4

0.8

1.2

1.6

2.0

0 1 2 3 4 5VDS, Drain-Source Voltage(V)

I D, D

rain

Cur

rent

(A

)

VGS=1.5V

2V

5V, 4.5V,4V,3.5V,3V,2.5V

Brekdown Voltage vs Ambient Temperature

0.6

0.8

1

1.2

1.4

-75 -50 -25 0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

BV

DSS

, No

rmal

ized

Dra

in-S

our

ce

Bre

akdo

wn

Vol

tag

e

ID=250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

0

0.2

0.4

0.6

0.8

1

1.2

0.01 0.1 1 10

ID, Drain Current(A)

RD

S(o

n), S

tati

c D

rain

-Sou

rce

On-

Sta

te

Res

ista

nce(

mΩ

)

VGS=4.5V

VGS=1.8V

VGS=2.5V

Reverse Drain Current vs Source-Drain Voltage

0

0.2

0.4

0.6

0.8

1

0 0.2 0.4 0.6 0.8 1

IDR, Reverse Drain Current (A)

VSD

, Sou

rce-

Dra

in V

olta

ge(V

)

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 1 2 3 4 5 6 7 8

VGS, Gate-Source Voltage(V)

RD

S(O

N),

Sta

tic D

rain

-Sou

rce

On-

Sta

te R

esist

ance

(Ω)

ID=600mA

Drain-Source On-State Resistance vs Junction Tempearture

0.6

0.8

1

1.2

1.4

1.6

1.8

-75 -50 -25 0 25 50 75 100 125 150 175


RD

S(O

N), N

orm

aliz

ed S

tatic

Dra

in-

Sour

ce O

n-St

ate

Res

ista

nce

VGS=4.5V, ID=600mA

RDS(ON)@Tj=25°C : 0.31Ω typ.




N-Channel Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

1

10

100

0 2 4 6 8 10 12 14 16 18 20

VDS, Drain-Source Voltage(V)

Cap

acita

nce-

--(p

F)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

-60 -40 -20 0 20 40 60 80 100 120 140 160


VG

S(t

h),

Nor

mal

ized

Thr

esho

ld V

olta

ge

ID=250μA

ID=1mA

Single Pulse Power Rating, Junction to Ambient(Note on page 2)

0

2

4

6

8

10

0.001 0.01 0.1 1 10 100

Pulse Width(s)

Pow

er (

W)

TJ(MAX)=150°C

TA=25°C

RθJA=833°C/W

Gate Charge Characteristics

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

Qg, Total Gate Charge(nC)

VG

S, G

ate-

Sour

ce V

olta

ge(V

)

VDS=10V

ID=250mA

Maximum Safe Operating Area

0.001

0.01

0.1

1

10

0.01 0.1 1 10 100VDS, Drain-Source Voltage(V)

I D, D

rain

Cur

rent

(A

)

DC

10ms

100ms

1ms

100μs

TA=25°C, Tj=150°C,

VGS=4.5V, RθJA=833°C/W

Single Pulse

RDS(ON)

Limited

Maximum Drain Current vs JunctionTemperature

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

25 50 75 100 125 150 175Tj, Junction Temperature(°C)

I D, M

axim

um D

rain

Cur

rent

(A)

TA=25°C, VGS=4.5V, RθJA=833°C/W




N-Channel Typical Characteristics(Cont.)

Typical Transfer Characteristics

0

0.4

0.8

1.2

1.6

2

0 0.5 1 1.5 2 2.5 3 3.5 4VGS, Gate-Source Voltage(V)

I D, D

rain

Cur

rent

(A

)

VDS=5V

25°C

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1ID, Drain Current(A)

GF

S, For

war

d T

ransf

er A

dmitta

nce

(S)

Ta=25°C

Pulsed

VDS=10V

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t1, Square Wave Pulse Duration(s)

r(t)

, N

orm

aliz

ed T

ran

sien

t T

her

mal

Res

ista

nce

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=833°C/W




P-Channel Typical Characteristics

Typical Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 1 2 3 4 5-VDS, Drain-Source Voltage(V)

-ID, D

rain

Cur

rent

(A

)

2.5V

-VGS=1.5V

2V

5V,4.5V,4V,3.5V,3V

Brekdown Voltage vs Ambient Temperature

0.6

0.8

1

1.2

1.4

-75 -50 -25 0 25 50 75 100 125 150 175


-BV

DSS

, N

orm

aliz

ed D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage

ID=-250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

3.6

4

0.01 0.1 1-ID, Drain Current(A)

RD

S(o

n), S

tati

c D

rain

-Sou

rce

On-

Sta

te

Res

ista

nce(

mΩ

)

-VGS=4.5V

-VGS=2.5V

-VGS=1.8V -VGS=4V

Reverse Drain Current vs Source-Drain Voltage

0

0.2

0.4

0.6

0.8

1

0 0.2 0.4 0.6 0.8 1

-IDR, Reverse Drain Current (A)

-VSD

, Sou

rce-

Dra

in V

olta

ge(V

)

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vsGate-Source Voltage

0

0.5

1

1.5

2

2.5

3

0 1 2 3 4 5 6 7 8

-VGS, Gate-Source Voltage(V)

RD

S(O

N), S

tatic

Dra

in-S

ourc

e O

n-St

ate

Res

ista

nce(

mΩ

)

ID=-430mA

Drain-Source On-State Resistance vs Junction Tempearture

0.6

0.8

1

1.2

1.4

1.6

1.8

-75 -50 -25 0 25 50 75 100 125 150 175


RD

S(O

N), N

orm

aliz

ed S

tatic

Dra

in-

Sour

ce O

n-St

ate

Res

ista

nce VGS=-4.5V, ID=-430mA

RDS(ON)@Tj=25°C : 0.62Ω typ.




P-Channel Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

0 2 4 6 8 10 12 14 16 18 20

-VDS, Drain-Source Voltage(V)

Cap

acita

nce(

pF)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

-75 -50 -25 0 25 50 75 100 125 150 175


-VG

S(t

h),

Nor

mal

ized

Thr

esho

ld V

olta

ge

ID=-250μA

ID=-1mA

Single Pulse Power Rating, Junction to Ambient(Note on page 2)

0

2

4

6

8

10

0.001 0.01 0.1 1 10 100

Pulse Width(s)

Pow

er (

W)

TJ(MAX)=150°C

TA=25°C

RθJA=833°C/W

Gate Charge Characteristics

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Qg, Total Gate Charge(nC)

-VG

S, G

ate-

Sour

ce V

olta

ge(V

)

VDS=-10V

ID=-250mA

Maximum Safe Operating Area

0.001

0.01

0.1

1

10

0.01 0.1 1 10 100-VDS, Drain-Source Voltage(V)

-ID, D

rain

Cur

rent

(A

)

DC

10ms

100ms

1ms

100μs

TA=25°C, Tj=150°C,

VGS=-4.5V, RθJA=833°C/W

Single Pulse

RDS(ON)

Limited

Maximum Drain Current vs JunctionTemperature

0

0.1

0.2

0.3

0.4

0.5

25 50 75 100 125 150 175Tj, Junction Temperature(°C)

-ID, M

axim

um D

rain

Cur

rent

(A)

TA=25°C, VGS=-4.5V, RθJA=833°C/W




P-Channel Typical Characteristics(Cont.)

Typical Transfer Characteristics

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0 1 2 3 4 5-VGS, Gate-Source Voltage(V)

-ID, D

rain

Cur

rent

(A

)

VDS=-5V

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1-ID, Drain Current(A)

GF

S, For

war

d T

ransf

er A

dmitta

nce

(S)

Ta=25°C

Pulsed

VDS=-10V

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t1, Square Wave Pulse Duration(s)

r(t)

, N

orm

aliz

ed T

ran

sien

t T

her

mal

Res

ista

nce

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=833°C/W




Reel Dimension

Carrier Tape Dimension




Recommended wave soldering condition Product Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate

(Tsmax to Tp) 3C/second max. 3C/second max.

Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)

100C

150C 60-120 seconds

150C

200C 60-180 seconds

Time maintained above: −Temperature (TL) − Time (tL)

183C 60-150 seconds

217C 60-150 seconds

Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C

Time within 5C of actual peak temperature(tp)

10-30 seconds 20-40 seconds

Ramp down rate 6C/second max. 6C/second max.

Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.




SOT-563 Dimension

DIM Inches Millimeters

DIM Inches Millimeters

Min. Max. Min. Max. Min. Max. Min. Max.

A 0.021 0.024 0.525 0.600 b 0.007 0.011 0.170 0.270

A1 0.000 0.002 0.000 0.050 E1 0.043 0.051 1.100 1.300

e 0.018 0.022 0.450 0.550 E 0.059 0.067 1.500 1.700

c 0.004 0.006 0.090 0.160 L 0.004 0.012 0.100 0.300

D 0.059 0.067 1.500 1.700 θ 7° REF 7° REF

Notes : 1.Controlling dimension : millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material :

Lead : Pure tin plated.

Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

CYStek reserves the right to make changes to its products without notice.

CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

6-Lead SOT-563 Plastic Surface Mounted Package CYStek Package Code: C6

Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1)

Marking:

Product Code

Date Code: Year+Month

Year: 7→2017, 8→2018

Month: 1→1, 2→2,‧‧‧

9→9, A→10, B→11, C→12

A3

n- and p-channel enhancement mode mosfet mtc1016c6ftp01.cystekec.com/mtc1016c6.pdf · 2018. 11....

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