nanoelectronics and the future of microelectronics
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Nanoelectronics and the Future of Microelectronics. Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN August 22, 2002. Introduction Challenges in Silicon Technology Beyond the MOSFET: Molecular FETs? Beyond FETs? Conclusions. - PowerPoint PPT PresentationTRANSCRIPT
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Mark LundstromElectrical and Computer EngineeringPurdue University, West Lafayette, IN
August 22, 2002
Nanoelectronics and the Future of Microelectronics
1. Introduction2. Challenges in Silicon Technology
3. Beyond the MOSFET: Molecular FETs?4. Beyond FETs?5. Conclusions
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1) Use theory and computation to understand small electronic devices and to explore the most promising paths for the next 2-3 decades.
2) Educate students and professionals in new ways of treating small electronics devices.
Objectives:
molecularelectronics?
10 nm scale MOSFETs
1. Introduction
“The important thing in science is not so much to obtain new facts as to discover new ways of thinking about them.” -William Bragg
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NASA URETI: Nanoelectronics and Computing
Mission:To lay a foundation for a new class of heterogeneous terascale systems with the intelligence, adaptability, and fault tolerance necessary for future NASA missions
CoreResearchThemes
Ultradense memoryUltraperformance devicesIntegrated sensingAdaptive systems
Education/Outreach
Devices/MaterialsFabrication/AssemblyCircuits/SystemsModeling/Computation
ExpertiseGroups
Curriculum developmentResearch experiencesSummer InstitutesPartnershipsWeb-based networksTech Transfer
Projects
Purdue University, Northwestern,Florida,Cornell, UCSD, Yale
“towardsintegrated
nanosystems”
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Nanoelectronics and the Future of Microelectronics
1. Introduction2. Challenges in Silicon Technology3. Beyond the MOSFET: Molecular FETs?4. Beyond FETs?5. Conclusions
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2. Challenges in Silicon Technology…..
Silicon wafer (12 inches)
Silicon “chip”(~ 2 cm sq.)
Currently: >200M transistors/chip
2016: ~10B transistors/chip
1950 1970 1990 2010 2030 20501 nm
10 nm
100 nm
1 m
10 m
100 m
YearM
inim
um F
eatu
re S
ize 1
1K
1M
?
1G
Technology generation L L/√2
Cost per function drops 25% / yr
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silicide
1.2nm SiO2
Strained Si
1970 1980 1990 2000 2010 2020
Intel: August 2002
www.intel.com/research/silicon/90nm_press_briefing-technical.htm
0.1
10
1
0.01
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2. Challenges in Silicon Technology…..
• fundamental limits
• materials limits
• device limits
• circuit and system limits
• practical limits
J.D. Meindl, et al., Science, 293, 2044, 2001
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2. Challenges in Silicon Technology….. Fundamental Limits
• thermodynamics• quantum mechanics• electromagnetics
c 200 ps
rintc int ~ 2
In practice:
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2. Challenges in Silicon Technology….. Material Limits
• silicon• metal interconnects• interlevel dielectrics• gate dielectric
1.2 nm
Min thickness?
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2. Challenges in Silicon Technology….. Device Limits
~ 60 nm
GateSource Drain
VDD
off-current on-current
power: f CVDD2
C0V
C
+ -
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2. Challenges in Silicon Technology…..
1990 2016
ID(on)
ID(off)
0.00001 A
1000 A
VT 1
N
10 A
device leakage and fluctuations
10X increaseper technology node
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2. Challenges in Silicon Technology…..
Rpar RparRchannel
Rparasitic 0.20 Rchannel
Device contacts
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2. Challenges in Silicon Technology…..Circuit and Systems Limits
• Speed
• Power
Silicon wafer
Metal 1
Metal 2
Metal 3
Metal 4
Metal 5
Metal 6
Metal 7
transistor
global
local
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2. Challenges in Silicon Technology….. Speed
Vin N-ch
ID(on)
CL
VDD
CLVDDID(on)
tt L
0.1ps
1
1.6 THz
localdevice:
globalrintc int ~ 2
circuit:
system:
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2. Challenges in Silicon Technology….. Power
Vin N-ch
ID(off)
CL
VDD
Poff ID(off )VDD
ID(off ) 10 A /m
1010 transistors/chip
1 kW
f CVDD2
static power dynamic power
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2. Challenges in Silicon Technology….. System Speed
J.D. Meindl, et al., “Limits on Silicon Nanoelectronics for Terascale Integration,”Science, 293, 2044, 2001
End-of-the-Roadmap silicon chips will operate 5 orders of magnitudefrom the fundamental limits for two main reasons:
1) Global interconnect delays
2) The need for a relatively high power supply voltage of ~ 0.5V
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2. Challenges in Silicon Technology….. Practical Limits
• lithography• etching• doping, etc.• atomic scale manufacturing
2016 MOSFET
16 < 1
15
All dimensions in units of the Silicon lattice constant, 5.4Å
1967 Cost of a Silicon Fab: $ 2M2002 Cost of a Silicon Fab: ~ $ 3B2015 Cost of a Silicon Fab: ~$100B
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2. Challenges in Silicon Technology…..
Selected 2001 ITRS “Grand Challenges”
• MOSFET on/off ratio• power management• noise management• global interconnects (cost of communication)• next generation lithography• process control• cost-effective manufacturing• decreasing reliability• error tolerant design• design productivity (system complexity)
www.itrs.net
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2. Challenges in Silicon Technology…..
J.D. Meindl, et al., “Limits on Silicon Nanoelectronics for Terascale Integration,”Science, 293, 2044, 2001
“After four decades of rapid advances in … silicon semiconductor technology, a systematic assessment of its hierarchy of physical limits reveals an enormous remaining potential to advance from the current multi-billion transistor chips to the multi-trillion transistor range of terascale integration.”
“This potential represents more than a three decade increase in the number of transistors per chip…”
“Fundamental physical limits….are virtually impenetrable barriers to future advanced of TSI.”
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Nanoelectronics and the Future of Microelectronics
1. Introduction2. Challenges in Silicon Technology
3. Beyond the MOSFET: Molecular FETs?4. Beyond FETs?5. Conclusions
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3. Beyond the Si MOSFET.....
VGVD
VS
VG
VD
VS
Bachtold, et al.,Science, Nov.2001
3) CNTFET
4) Molecular Transistors?
1) MOSFET
2) SBFET VG
VS VD
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L
tox tSi
The Double Gate MOSFET
+ good scaling + good sub-threshold swing+ high drive current- manufacturability- design
0 VD
VG
VG
electron energy = -q x voltage
3. Beyond the Si MOSFET.....
gate-modulated Q
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Jing Guo (Purdue)
VG
VDVS
off-state
on-state
Bn
Bn
EF
EF
The Schottky barrier MOSFET3. Beyond the Si MOSFET.....
gate-modulated T
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3. Beyond the Si MOSFET.....
C na1 ma2
graphene (n, m) carbon nanotube
k C 2 q
the CNTFET
“chirality”metalic: (n-m) = multiple of 3
semiconducting: EG ~ 0.7 eV/D(nm)
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3. Beyond the Si MOSFET.....
coaxial geometry
the CNTFET
planar geometry CNTFET
Buried oxide
SidewallSpacerGate
GateInsulator
CNT
Drain
SourceS
G
D
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max~ 2,000-20,000 cm2/ V-s
Ion ~ 10 at VDD~1V
McEuen group, to be published.
3. Beyond the Si MOSFET..... the CNTFET
D = 3 nmTins = 10nm SiO2
Tins = 3nm HfO2
Tins = water gate
Increasing C
ITRS
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3. Beyond the Si MOSFET..... the CNTFET
The ultimate FET?
negative SBcontact?Rseries ~ 0
near-ballistictransport
high velocitybandstructure
high on-current(perhaps 3 nA/nm)
high on/off ratio
low voltage
good device-devicecontrol
cylindricalgeometry forelectrostatics
no surface statesto accommodate hi-KCQ limited operation
Buried oxide
Source
Drain
CNT
gateinsulator
sidewallspacergate
small footprint
growth, assembly, manufacturing?
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3. Beyond the Si MOSFET..... SAMFETs ?
S ≈ 100 mV/dec
L≈ 1 nmtox << L
tox ≈ 1-2Å !!
P. Damle, et al.
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3. Beyond the Si MOSFET..... SAMFETs ?
tox = 1nm
gate-modulated conformation?
S. Datta, A. Ghosh, P. Damle, T. Rakshit
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www.ece.purdue.edu/celab
Nanoelectronics and the Future of Microelectronics?
1. Introduction2. Challenges in Silicon Technology
3. Beyond the MOSFET: Molecular FETs?4. Beyond FETs?5. Conclusions
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4. Beyond FETs.....
Single electron transistors
gate
channel
2016: L=9nm, W=18nm VDD = 0.4V, VT = ~0.2V
Tox = 1 nm
~6 electrons
gate
island
tunnel barriers
q/C >> kBT/q
for 300K operationDia ~ 1 nm(C ~ 0.1aF)
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4. Beyond FETs.....
Small MOSFET Single Electron Transistor
VDS
IDS
increasing VGS
VT
-VT
increasing VGS
VDS
“Coulomb blockade”
From K. Likharev, to appear 2002
IDS
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4. Beyond FETs.....
SET / MOSFET memories?
From K. Likharev, to appear 2002
Cell size = 8F2
Fmin ≈ 2 nm
-->
> 1012 bits/cm2
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4. Beyond FETs.....
S
NO2
NH2
conjugated molecule backbone
Au
nitroamine redoxcenter
evaporatedcontact
SAM
Au
Reed (Yale) and Taur (Rice)
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4. Beyond FETs.....
-4 -2 0 2 4
0.0
1.0n
2.0n
T = 60 KNO2 only
I (A
)
V
J A601st
-2 -1 0 1 2-400.0n
-200.0n
0.0
200.0n NH2-only
T = 60 K
I (A
)
V
E B
NH2
NH2 only N02
Cur
rent
J. Chen, et al., Yale
Cur
rent
VoltageVoltage
S
NO2
NH2
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4. Beyond FETs..... Transistors and tunnel diodes
• memory• latches• registers• A/D converters• multiplexers• clock generators• etc.
+ increase speed+ lower power+ reduce size
CMOS/TD SRAM
A. Sebaugh, et al. 1998 IEDM Tech. Digest
+ 20X reduction in power (DRAM) + 50% reduction in size (SRAM)
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Nanoelectronics and the Future of Microelectronics
1. Introduction2. Challenges in Silicon Technology
3. Beyond the MOSFET: Molecular FETs?4. Beyond FETs?5. Conclusions
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5. Conclusions
• The science of molecular electronics is rapidly advancing.
• This is a creative time for device invention.
• Silicon technology continues to beat Moore’s Law.
How do we make progress towards integrated nanoelectronic systems?
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• low on-current at low VDS
• high off-current
• large device to device variations
• low reliability and yield
• device footprint hard to scale
End-of-the Roadmap MOSFETs
The characteristics of nano-MOSFETs will be similar to those of the alternatives being explored.
5. Conclusions
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5. Conclusions
Selected 2001 ITRS Design Challenges
• communication centric design (network-oriented paradigms)
• design robustness (fault tolerance)
• system power consumption (on-chip parallelism, re-configurability)
• integration of heterogeneous technologies (for sensing, actuation, possibly computation)
www.itrs.net
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5. Conclusions
Characteristics of future nanocomputer architectures
• extremely localized interconnect
• homogeneous arrays to support heterogeneous processing
• parallelism at multiple levels
• dynamic re-configurability and fault tolerance
Beckett and Jennings., “Towards Nanocomputer Architecture,”ACSAC ‘2002..
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5. Conclusions
gigascale CMOS
• bio-inspired perceptualization• sensors• optoelectronics• …
• ultra-dense nonvolatile memory• cooling (active/passive)• low-cost manufacturing• …
3D heterogeneoussystems
1) add functionality to a Si SOC:
2) improve a Si SOC:
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5. Conclusions
Year 5 Year 10
identify promising approaches
develop scienceand engineering base for prototype integratednanosystems
1) develop the science base2) explore transistors and novel devices3) growth and assembly…
…guided by system issues
Year 1
Integrated Nanoelectronic Systems: A 10 Year Vision
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5. Conclusions
-nano / molecular science-device invention
-circuit / systemdesign
“The best way to predict the future is to invent it.” -Alan Kay