october 2002sienna, jl. faure, dapnia/spp in 8th topical seminar on innovative particle and...

October 2002 Sienna, JL. Faure, DAPNIA/SPP

InIn

8th Topical Seminar on Innovative Particle and 8th Topical Seminar on Innovative Particle and Radiation DetectorsRadiation Detectors

Jean-louis Faure CEA-DAPNIA-SPPJean-louis Faure CEA-DAPNIA-SPP

Progress with Photo-detectors


Photo-detectorsPhoto-detectors

Vacuum DevicesSolid States DetectorsGaseous Detectors

High Energy PhysicsAstro-PhysicsMedecine

Restriction to Visible Light


Requirements IRequirements IPhoton counting capability

In scintillation detection In Cerenkov light detection

Pixelisation & Single photonScintillating fiberCerenkov counter RICH

Low photon Yield (single photon)Gain

SpeedLarge Surface CoverageHarsh Environement

Magnetic fieldRadiation field

High Energy Physics

Medicine

Astro Physics


Requirements II Requirements II Resolution reminderResolution reminder

Nphoto−electron=QuantumEff⋅Ccollected⋅ Nγ_ signal.or.background

σsignal/background= ENF ⋅ Nphoto−electron

ENF =1+ 1δ1

+ 1δ1δ2

+⋅⋅⋅+ 1δ1δ2 ⋅⋅⋅δn

σENC =ENCGain

σE

= σNphoto−electron

= σsignal2 +σBackground

2 +σ ENC2

Npe


Requirements III Requirements III Resolution reminderResolution reminder

σE

≈ ENFQE⋅Ccol ⋅Nγ

σE

=ENF⋅QuantumEff⋅Ccol ⋅(Nγ _ signal+Nγ _ background)+(ENC/ Gain)2

QuantumEff⋅Ccol ⋅Nγ

G >>ENC or ENC small !!Nbackground << Nsignal

QE as high as possibleENF as close as 1.Ccol as close as 100%

N as large as possible !!!


Requirements IV Requirements IV Resolution summaryResolution summary

No.of Photons

Ener

gy R

eso l

u ti o

n

0.001

Poisson (statistic) LimitENF=1QE=1Ccol=1

Photo Diode

Avalanche Photo-diode

Hybrid Photo-DiodePMT

0.01

0.1

1

10

10 1 10 2 10 710 3 10 4 10 610 0


Vacuum DevicesVacuum DevicesVacuum Devices are the ground of Photodetection

since more than 40 years

There are still important progress made and to be made ?

Last years a lot of efforts on “Compactness” Flat PMT“Pixelization” Multi-anode PMT“Hybridation” Hybrid Photo-diode


FLAT PMT HamamatsuFLAT PMT Hamamatsu

64 Pixels

Metal Channel dynode

RICH2002 J. Va’vra (SLAC)


Delft Electronic Products B.V. HPDs

LHCb

19 x 5.5mm

73 x 2.75mm

CMS HCAL

Photon Countingpossibility


MultiAnode PMTMultiAnode PMT

Hamamatsu R7600-M16/M64

EUSO Focal Plane 2.5 m diameter250.000 pixels

Hamamatsu R5900 seriesM64 (64 anodes – metal dynode chains)

Enhancing the actual active surfaceFrom 38 % to 85 %

From RICH2002 Workshop: Franz Muheim (U.of Edinburgh)


””Large” PMT ExamplesLarge” PMT Examples

1 km

10 TeV Muon Event

Photomultiplier

ICECUBE(Amanda II)60 PMTs/string80 strings4800PMTs

AUGER1600 water tanks 3 PMTs≈ 4800 PMT of 9”

Photonis XP1805/D1


Quantum Quantum EfficiencyEfficiency


MCP R&DMCP R&D

Photoelectron

photonFaceplate

Photocathode !V ~ 300V

Dual MCP !V ~ 3000V

6 !V ~ 300V

Anode

Gain ~ 106

BurlePlanacom™

Micro Channel PlateMCP-PMTs

SiliconMicro Channel Plate

Silicon MCP are made by photolithography5 m pores Potential large surfaceStrip readout (X and Y) pixel nb reduction

From O.Siegmund SSL UCB


APDsAPDs

Si3N4, SiO2, contactp++photon conversionp e- accelerationn e- multiplication

n-e- drift

n++e- collection

contact

Not to scale

APD are grown by epitaxy on n++ wafer

5 mm

Active area 5x5 mm2

Operating voltage (Vr) ~380 VCapacitance 70 pFSerial resistance 3 ΩDark Current <10 nAQuantu efficien cy ∼72% @ 420 n

CMS ECALDouble APD


APDs con’t APDs con’t

1

3

5

7

9

11

13

15

0 500 1000 1500 2000

Gain

Excess Noise Factor

0

10

20

30

40

50

60

70

80

90

100

300 400 500 600 700 800 900 1000Wavelength [nm]

Quantum Efficiency [%]

dMdV

× 1M

=3%/V dMdT

× 1M

=−2%/0C

ENF =k ×G+ 2−1G( )×(1−k)k is the hole / elec velocity ratioG the gain

ENF≥2


APDs R&DAPDs R&DHow to overcome the ENF versus Gain issue

=How to operate at high gain without increasing ENF

Run at low temperature

Reverse APDs

LAAPD Large Array APD

Build a HAPDHPMT using an APD instead of an PIN diode


Silicon PMSilicon PMby P. Buzhan, B. Dolgoshein et. al.

G= 2x106

ENF≈1QE≈10%Sensitive area 1.5x1.5 mm


Gaseous Photo DetectorGaseous Photo Detector

• fast signals [1-10 ns] • high gain [>105] • sensitivity to single photoelectrons• operation in noble gases (mixtures) • high 2D precision

Multi-GEM GMPTs

From Breskin et al.CsI Quantum Efficiency

CsI photo-cathode mature technologyIs well adpated to RICH

How to work in visible light ?A possible solution for very large surface detector


SummarySummaryHuge progress in small pixel photodetectors

Hybid devices [HPD, MaPMT,….] Solid states arrays [PiN, APD,….]

R&DHybrid improvement (HAPD)Promising use of nano-technology Silicon MCP

Very Large surface (volume) coverageVacuum devices today only solution ?R&D needs

Dream no vacuumLarge area photo-cathode

High Energy Physics&

Medicine

Astro Particule&

Astrophysics

october 2002sienna, jl. faure, dapnia/spp in 8th topical seminar on innovative particle and...

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