on semiconductor bav99lt1g datasheet
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8/10/2019 On Semiconductor BAV99LT1G Datasheet
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BAV99LT1G
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OFF CHARACTERISTICS (TA= 25C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage,
(I(BR)= 100 A) V(BR) 70 Vdc
Reverse Voltage Leakage Current,
(VR= 70 Vdc)
(VR= 25 Vdc, TJ= 150C)
(VR
= 70 Vdc, TJ= 150C)
IR
2.53050
Adc
Diode Capacitance,
(VR= 0, f = 1.0 MHz) CD 1.5 pF
Forward Voltage,
(IF= 1.0 mAdc)
(IF= 10 mAdc)
(IF= 50 mAdc)
(IF= 150 mAdc)
VF
715855
10001250
mVdc
Reverse Recovery Time,
(IF= IR= 10 mAdc, iR(REC)= 1.0 mAdc) RL= 100 trr 6.0 ns
Forward Recovery Voltage,
(IF= 10 mA, tr= 20 ns) VFR 1.75 V
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BAV99LT1G
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PACKAGE DIMENSIONS
SOT23 (TO236)CASE 31808
ISSUE AN
*For additional information on our PbFree strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
mminches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.0370.95
0.037
2.0
0.079
D
A1
3
1 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUMTHICKNESS OF BASE MATERIAL.
4. 31801 THRU 07 AND 09 OBSOLETE, NEW STANDARD 31808.
VIEW C
L
0.25
L1
e
E E
b
A
SEE VIEW C
DIMA
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001b 0.37 0.44 0.50 0.015c 0.09 0.13 0.18 0.003D 2.80 2.90 3.04 0.110E 1.20 1.30 1.40 0.047e 1.78 1.90 2.04 0.070L 0.10 0.20 0.30 0.004
0.040 0.0440.002 0.0040.018 0.0200.005 0.0070.114 0.1200.051 0.0550.075 0.0810.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104HE
0.35 0.54 0.69 0.014 0.021 0.029
c
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BAV99LT1/D
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