out ldmos avionics radar transistor5 test circuit 5.1 electrical schematic and bom figure 9....

16
STAC780-2B 1 2 3 Pin connection Pin Connection 1 Drain 2 Gate 3 Source (bottom side) Features Order code Frequency V DD P OUT Gain Efficiency STAC1011-350 1030 to 1090 MHz 36 V 350 W 15 dB 53 % Excellent thermal stability Common source configuration P OUT = 350W with 15 dB gain over 1030 to 1090 MHz ST air-cavity STAC packaging technology Applications Avionics Description The STAC1011-350 is a common source N-channel enhancement-mode lateral field- effect RF power transistor designed for avionics applications at frequencies range 1030 to 1090 MHz. Product status link STAC1011-350 Product summary Order code STAC1011-350 Marking 1011-350 Package STAC780-2B Packing Tube Base/bulk quantity 15/90 LDMOS avionics radar transistor STAC1011-350 Datasheet DS8584 - Rev 8 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com

Upload: others

Post on 14-Sep-2020

2 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

STAC780-2B

1

2

3

Pin connection

Pin Connection

1 Drain

2 Gate

3 Source (bottom side)

FeaturesOrder code Frequency VDD POUT Gain Efficiency

STAC1011-350 1030 to 1090 MHz 36 V 350 W 15 dB 53 %

• Excellent thermal stability• Common source configuration• POUT = 350W with 15 dB gain over 1030 to 1090 MHz• ST air-cavity STAC packaging technology

Applications• Avionics

DescriptionThe STAC1011-350 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for avionics applications at frequencies range1030 to 1090 MHz.

Product status link

STAC1011-350

Product summary

Order code STAC1011-350

Marking 1011-350

Package STAC780-2B

Packing Tube

Base/bulk quantity 15/90

LDMOS avionics radar transistor

STAC1011-350

Datasheet

DS8584 - Rev 8 - July 2020For further information contact your local STMicroelectronics sales office.

www.st.com

Page 2: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

1 Electrical data

1.1 Maximum ratings

Table 1. Absolute maximum ratings (TCASE = +25 °C)

Symbol Parameter Value Unit

V(BR)DSS Drain-source voltage 80 V

VGS Gate-source voltage ±20 V

PDISS Power dissipation (at TCASE = +70 °C) 1440 W

TJ Maximum operating junction temperature +200 °C

TSTG Storage temperature range -65 to +150 °C

1.2 Thermal data

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Junction-case thermal resistance 0.09 °C/W

Note: Thermal data at 50 µs - 2%

1.3 ESD protection characteristics

Table 3. ESD protection

Symbol Test methodology Class

HBM Human body model (per JESD22-A114) 2

STAC1011-350Electrical data

DS8584 - Rev 8 page 2/16

Page 3: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

2.1 Static

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, IDS = 20 mA 80 V

IDSSZero gate voltage drain leakagecurrent VGS = 0 V, VDS = 28 V 2 μA

IGSS Gate-source leakage current VGS = 15 V, VDS = 0 V 1 μA

VGS(Q) Gate quiescent voltage VDS = 28 V, IDS = 150 mA 2.0 5.0 V

VDS(on) Drain-source on voltage VGS = 10 V, IDS = 6 A 550 600 mV

GFS Forward transconductance VDS = 10 V, IDS = 6 A 2.5 S

2.2 Dynamic

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

f Frequency 1030 1090 MHz

POUT Output power PIN = 15 W 350 370 W

GPS Power gain POUT = 350 W 13 15 dB

ŋD Drain efficiency POUT = 350 W 50 53 %

tr Rise time POUT = 350 W 50 ns

tf Fall time POUT = 350 W 25 ns

ΔGPS Gain variation POUT = 350 W, gain droop withinthe pulse 0.2 dB

VSWR Load mismatch All phase angles at POUT = 350 W 10:1

Note: VDD = 36 V, IDQ = 150 mA, pulse width = 50 μs, duty cycle = 2%.

STAC1011-350Electrical characteristics

DS8584 - Rev 8 page 3/16

Page 4: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

3 Impedance data

Figure 1. Impedance data

Table 6. Impedance data

Frequency (MHz) Zsource (Ohm) Zload (Ohm)

1030 1+j0.126 1.12+j0.242

1060 0.855+j0.417 0.929+j0.560

1090 0.709+j0.764 0.752+j0.881

STAC1011-350Impedance data

DS8584 - Rev 8 page 4/16

Page 5: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

4 Typical performances

Figure 2. Output power vs gain and supply voltage at1030 MHz

1011121314151617181920

0 50 100 150 200 250 300 350 400 450

VDD = 32V VDD = 36V

Broadband dataIDQ= 150mA

Pulse width = 50 µsDuty cycle = 2%

Gai

n (d

B)

Output power (W)AM10111V1

Figure 3. Output power and efficiency vs frequency -broadband data

40

42

44

46

48

50

52

54

56

58

60

320

330

340

350

360

370

380

390

400

410

420

1020 1030 1040 1050 1060 1070 1080 1090 1100

Effic

ienc

y (%

)

Out

put p

ower

(W)

f(MHz)

Pout Efficiency

VDD= 36V IDQ = 150mAPIN = 15W

Pulse width = 50 µsDuty cycle = 2%

AM10112V1

Figure 4. Output power vs gain and supply voltage at1060 MHz

1011121314151617181920

0 50 100 150 200 250 300 350 400 450

Gai

n (d

B)

Output power (W)

VDD = 32V VDD = 36V

Broadband dataIDQ = 150mA

Pulse width = 50 µsDuty cycle = 2%

AM10113V1

Figure 5. Gain and input return loss vs frequency -broadband data

-26

-22

-18

-14

-10

-6

10

11

12

13

14

15

16

17

18

19

20

1020 1030 1040 1050 1060 1070 1080 1090 1100

Inpu

t ret

urn

loss

(dB)

Gain

(dB)

Gain IRL

VDD= 36V IDQ = 150mAPOUT = 350W

Pulse width = 50 µsDuty cycle = 2%

f(MHz)

AM10114V1

STAC1011-350Typical performances

DS8584 - Rev 8 page 5/16

Page 6: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

Figure 6. Output power vs gain and supply voltage at1090 MHz

1011121314151617181920

0 50 100 150 200 250 300 350 400 450

Gain

(dB)

Output power (W)

VDD = 32V VDD = 36V

= 150mABroadband data

IDQPulse width = 50 µs

Duty cycle = 2%

AM10115V1

Figure 7. Output power vs input power - broadband data

0

50

100

150

200

250

300

350

400

450

500

0 2 4 6 8 10 12 14 16 18 20 22

Out

put p

ower

(W)

Input power (W)

1030 MHz 1060 MHz 1090 MHz

VDD= 36V IDQ = 150mAPulse width = 50 µs

Duty cycle = 2%

AM10116V1

Figure 8. Efficiency vs output power broadband data

0

10

20

30

40

50

60

70

0 50 100 150 200 250 300 350 400 450

Effic

ienc

y (%

)

Output power (W)

1030 MHz 1060 MHz 1090 MHz

VDD= 36V IDQ = 150mAPulse width = 50 µs

Duty cycle = 2%

AM10117V1

STAC1011-350Typical performances

DS8584 - Rev 8 page 6/16

Page 7: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

5 Test circuit

5.1 Electrical schematic and BOM

Figure 9. Broadband 1030-1090 MHz electrical schematic

C6

T1 C1 T2 T3 T4

VggC3

R1

DUT

T5

R2C4

R3

T6 T7

T15

T8 T9 T10

C5

C2T12T11

C7 C8

T13

Vdd

T14

GADG060420201202SA

Table 7. Component list

Component Description Dimension (X,Y) Values

TL1 Stripline L=0.111" W=0.022"

TL2 Stripline L=0.063" W=0.196"

TL3 Stripline L=0.172" W=0.082"

TL4 Stripline L=0.273" W=0.022"

TL5 Stripline L=1.196" W=0.196"

TL6 Stripline L=0.092" W=0.929"

TL7 Stripline L=0.311" W=1.259"

TL8 Stripline L=0.100" W=0.994"

TL9 Stripline L=0.148" W=0.994"

TL10 Stripline L=0.385" W=0.929"

TL11 Stripline L=1.183" W=0.196"

TL12 Stripline L=0.111" W=0.022"

TL13 Stripline L=0.183" W=0.196"

TL14 Stripline L=0.145" W=0.022"

TL15 Stripline L=0.741" W=0.022"

S1 Shim L=0.022" W=0.389"

S2 Shim L=0.050" W=0.087"

S3 Shim L=0.050" W=0.087"

S4 Shim L=0.100" W=0.0474"

S5 Shim L=0.110" W=0.160"

S6 Shim L=0.110" W=0.160"

S7 Shim L=0.050" W=0.183"

S8 Shim L=0.055" W=0.366"

S9 Shim L=0.050" W=0.183"

S10 Shim L=0.105" W=0.183"

S11 Shim L=0.050" W=0.183"

STAC1011-350Test circuit

DS8584 - Rev 8 page 7/16

Page 8: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

Component Description Dimension (X,Y) Values

S12 Shim L=0.380" W=0.065"

S13 Shim L=0.105" W=0.065"

S14 Shim L=0.022" W=0.200"

C8 1000 μF, 63 V electrolytic capacitor 1000 µF

C7 100 μF, 100 V electrolytic capacitor 100 µF

C6 ATC700B122JT 50 X 1200 pF

C5 ATC100B330KW500X 33 pF

C4 ATC100B101KW500X 100 pF

C3 220 μF, 63 V electrolytic capacitor 220 pF

C2 ATC100A300JP 150X 30 pF

C1 ATC100A300JP 150X 30 pF

R3 CR1206-4W-132JB 1.3 kΩ

R2 CR1206-4W-681JB 680Ω

R1 CR1206-4W-361JB 360 Ω

PCB Rogers Duroid 6010 Er = 10.2, Th = 0.64 mm 3X5"

STAC1011-350 Electrical schematic and BOM

DS8584 - Rev 8 page 8/16

Page 9: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

5.2 Layout

Figure 10. Broadband 1030-1090 MHz test circuit layout

AM12368v1+

R2R1

R3

C3

C5

C1 C2

T1T2

T3

S1

S2

S4

T5 T7

T8

S7

S10

S11

S9

S13

T11 T13

S12

T14

S14

+ +C7 C8

T4

C4

C6

T6

S6

S5

T9

T10 T12

S8

S3

T15

Figure 11. Demonstration board picture

STAC1011-350Layout

DS8584 - Rev 8 page 9/16

Page 10: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STAC1011-350Package information

DS8584 - Rev 8 page 10/16

Page 11: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

6.1 STAC780-2B package information

Figure 12. STAC780-2B package outline

DM00481924_2

STAC1011-350STAC780-2B package information

DS8584 - Rev 8 page 11/16

Page 12: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

Table 8. STAC780-2B mechanical data

Ref.Millimeters

Min. Typ. Max.

A 12.65 12.75

B 4.57 5.08

C 9.65 9.91

D 17.78 18.08

E 33.88 34.19

F 0.11 0.17

G 0.97 1.14

H 1.52 1.70

I 4.83 5.33

J 9.52 9.78

K 27.69 28.19

L 3.20 3.25 3.30

M 3.43 3.51 3.58

N 3.30 3.38 3.45

p 7.14 7.21 7.29

q 1.37

r 1.52

R1 0.63

R2 1.52

s 0.51

θ 10°

CH1 2.72

CH2 1.52

STAC1011-350STAC780-2B package information

DS8584 - Rev 8 page 12/16

Page 13: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

6.2 STAC780-2B marking information

Figure 13. STAC780-2B marking information

CD00362879_13

LEGEND

Unmarkable Surface

Marking Composition Field ADDITIONAL INFORMATION

(MAX CHAR ALLOWED = 1) MARKING AREA ADDITIONAL INFORMATION (MAX CHAR ALLOWED = 1) STANDARD ST LOGO (0000093) Assy Plant (PP) FE Sequence (nnn) Diffusion Traceability

Plant(WX)

COUNTRY OF ORIGIN (MAX CHAR ALLOWED = 3)

Test & Finishing Plant (TF) Assy Year (Y) Assy Week (WW)

Product

A B CD

E F G

H I J K

PACKAGE FACE : TOP

A

BC

D

E

F

G

H

J

I

K

STAC1011-350STAC780-2B marking information

DS8584 - Rev 8 page 13/16

Page 14: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

Revision history

Table 9. Document revision history

Date Version Changes

25-Jul-2011 1 First release

12-Sep-2011 2 Inserted Section 5: Circuit and BOM.

13-Sep-2011 3 Updated dimensions in Table 8: STAC265B mechanical data.

06-Jun-2012 4

– Modified: Figure 10

– Added: Figure 11

– Updated the entire Table 7

24-Sep-2012 5Updated title on the cover page.

Updated Table 4.

20-May-2014 6

Updated Figure 12: Package dimensions.

Minor text changes.

Document status promoted from preliminary to production data.

16-Apr-2020 7

Updated Section 6.1 STAC780-2B package information.

Added Section 1.3 ESD protection characteristics.

Minor text changes.

13-Jul-2020 8 Modified features table on cover page.

STAC1011-350

DS8584 - Rev 8 page 14/16

Page 15: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.3 ESD protection characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Static. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Impedance data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

5.1 Electrical schematic and BOM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5.2 Layout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

6.1 STAC780-2B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6.2 STAC780-2B marking information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STAC1011-350Contents

DS8584 - Rev 8 page 15/16

Page 16: OUT LDMOS avionics radar transistor5 Test circuit 5.1 Electrical schematic and BOM Figure 9. Broadband 1030-1090 MHz electrical schematic C6 T1 C1 T2 T3 T4 Vgg C3 R1 DUT T5 R2 C4 R3

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2020 STMicroelectronics – All rights reserved

STAC1011-350

DS8584 - Rev 8 page 16/16