ovonic unified memory
TRANSCRIPT
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OVONIC UNIFIED MEMORY
Sarath Kumar SS7 ECE
Roll no:68
Government Engineering CollegeSreekrishnapuram ,Palakkad
October 29, 2010
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CONTENTS
Introduction
Present memory scenario
OUM operation
Characteristics of OUM
Advantages of OUM
Disadvantages OUm
Conclusion
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Introduction
25percent of world wide chip markets are memory devices
Day by day the user needs are increasing exponentially
Memory objectives
Adequate storage capacityAcceptable level of performanceReasonable cost
Ovonic unified memory (OUM) is an advanced memory technology,which stores data via the phase change characteristics of its basematerial, which provides 3 times faster data storage performance perword than NOR chips
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Present memory scenario
Volatile
SRAMDRAM
Non Volatile
PROMEPROMEEPROMFlash Memory
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Review of memory basics
The memory components of a computer can be subdivided into three maingroups
Internal processor memory
Main memory
Secondary memory
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Memory device characteristics
Access time and access rate
Access mode-random and serial
Cycle time and data transfer rate
Size and Cost
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Limitations of present memory technologies
DRAMs are difficult to integrate
SRAMs are expensive
FLASH memory can have only a limited number of read and writecycles
EPROMs have high power requirement and poor flexibility
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OVONIC UNIFIED MEMORY
Principle
Reversible structural phase change
Applying read or write pulses
Reset state and Set state
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Memory structure
Figure: memory structure of OUM
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Temperature Vs Time graph
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Technology and performance
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I-V characteristics
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R-I characteristics
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Production Process
Melting of the raw material and subsequent milling
Achieves the defined particle size distribution
Powders are processed to discs through Hot Isotactic Pressing
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Chalcogenide alloy
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Comparison of the two states of OUM
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Advantages of OUM
High density
Read-write performance
Low programming energy
Process simplicity
Cost
CMOS embeddability
Scalability
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Disadvantages of OUM
High temperatures involved in the manufacturing process.
Higher voltages are required to write data.
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CONCLUSION
Non volatile OUM with fast read and write speeds,low voltage/low energyoperation,ease of integration and competitive cost structure is suitable forultra high density , stand alone and embedded memory applications. Itsunique combination of features collectively provide a high-density,low-power.Is still a futuristic memory
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References
OUM a a 180 nm non volatile memory cell element technology forstand alone and embedded applications a Stefan Lai and Tyler Lowrey
Current status of Phase change memory a Stefan Lai
Computer Organization a V Carl Hamacher, Zvonko G Vranesic,Safwat G Zaky
Computer Architecture and Organization - John P Hayes.
Solid State Devices- Ben G Streetman,Sanjay Banerjee
http://en.wikipedia.org/wiki/EnergyConversionDevices
http://www.ieee.xplore.org/ovonicunifiedmemory
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Thank you
...........THANK YOU...........
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