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Military University of Technology Institute of Optoelectronics. Advanced Solid-State Lasers (27 Oct – 1 Nov 2013 – Paris, France) ATu3A.22. Paper no. Room-temperature, efficient, high energy diode-side-pumped Yb:YAG oscillator - PowerPoint PPT PresentationTRANSCRIPT
Paper no.
Military University of TechnologyInstitute of Optoelectronics
Advanced Solid-State Lasers (27 Oct – 1 Nov 2013 – Paris, France) ATu3A.22
Room-temperature, efficient, high energy diode-side-pumped Yb:YAG oscillator
M. Kaskow*, W. Zendzian, J. K. Jabczynski, J. Firak, L. Gorajek, J. Kwiatkowski, K. Kopczynski
Institute of Optoelectronics, Military University of Technology, Warsaw, Poland*e-mail: [email protected]
Free-running operation in a side-pumped Yb:YAG slab laser is reported. For max. available pump pulse energy of 850 mJ the output pulses with energy of 150 mJ were obtained. The laser system provides slope efficiency of 26.9% in room-temperature operation.– Simple, linear resonator– Yb:YAG slab (4x4x13 mm3, 15% Yb)– Facets cut under 10 angle
Output energy vs. pump energy for different
Yb:YAG slab temperatures
Output energy vs. pump energy for different
outcoupling transmissions
Pulse generation delay vs. pump energy for different
Yb:YAG slab temperatueres
SummaryOutput pulse energy up to 160 mJ was achieved with slope efficiency of 26.9 %. Relatively high threshold energy (> 250 mJ) can be diminished via optimization of pump spectrum and caustics sizes, gain element dopant level and cavity parameters. The efficient operation in the Q-switching and power amplification regimes seems to be feasible. Lower laser level is populated with approx. 4% of active ions. For that reason it is crucial to provide best matching between pump region and fundamental mode of the resonator in order to mitigate reabsorption losses.
Output energy vs. pump energy for different
resonator lengths
Pulse generation delay vs. pump energy for different
resonator lenghts
This research has been supported by:– Polish National Science Center Project No. NCN2012/05/B/ST7/00088– Polish Ministry of Science and Higher Education Project No. UMO-2012/06/M/ST/00425
Institute of Optoelectronics MUTUl. Gen. S. Kaliskiego 2, 00-908 Warsaw, Polandphone: (+48 22) 683 94 30, fax: (+48 22) 666 89 50 www.ioe.wat.edu.pl