photochemistry on tio 2 semiconductor...
TRANSCRIPT
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John T. Yates, Jr.John T. Yates, Jr.
Department of ChemistryDepartment of Chemistry
University of University of VirginiaVirginia
Charlottesville, VA 22904Charlottesville, VA 22904
[email protected]@virginia.edu
Photochemistry on TiOPhotochemistry on TiO22 Semiconductor SurfacesSemiconductor Surfaces
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1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005
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ublic
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ns
Year
A. A. FujishimaFujishima and K. Honda, Nature 238 (1972) 37.and K. Honda, Nature 238 (1972) 37.
1972: Water Splitting at n1972: Water Splitting at n--TiOTiO22 ElectrodesElectrodes
www.isiknowledge.com. Search terms = (TiO2OR titanium dioxide AND photo*)
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CB
VB+++
hν
3.0 eV
Upon UV excitation, both electrons and holes are photochemically active
towards adsorbates on the TiO2 surface.
Donor
Molecule
Product
Product
Acceptor
Molecule
Semiconductor Semiconductor PhotoexcitationPhotoexcitation : TiO: TiO22
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Taken from: Fujishima, Hashimoto, Watanabe, “TiO2-Photocatalysis, Fundamentals and Applications”, BKC Inc. Tokyo, 1999
Motivation? TiO2 Based PhotocatalyticTechnology Works!
Motivation? TiO2 Based PhotocatalyticTechnology Works!
TiO2 Based Systems are Efficient Photocatalysts
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TiOTiO22 as a Photochemical Substrateas a Photochemical Substrate
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2.0nm
5-fold Ti
bridging O vacancy
in-plane O 6-fold Tibridging O
5-fold Ti
[001
]
MezhenneyMezhenney et al. Chemical Physics et al. Chemical Physics Letters, 369 (2003) 152.Letters, 369 (2003) 152.
Atomic Structure of TiOAtomic Structure of TiO22(110) Surface(110) Surface
TiOTiO22(110)(110)--(1x1) surface without oxygen(1x1) surface without oxygen
vacancies is vacancies is stochiometricstochiometric (TiO(TiO22))
The surface density of oxygen The surface density of oxygen
vacancy sites is regulated by vacancy sites is regulated by annealing conditions annealing conditions
(time, presence of O(time, presence of O22))
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Heating TiOHeating TiO22 above above ~ 700 ~ 700 ––
800 K 800 K →→→→→→→→ OO--vacancy defectsvacancy defects
(reduced TiO(reduced TiO22))
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Pan, J. M.; Maschhoff, B. L.; Diebold, U.; Madey, T. E. J. Vac. Sci. Technol. A 1992, 10, 2470.
He Ion Scattering Spectroscopy He Ion Scattering Spectroscopy –– Detects Detects 1818OO22 on Vacancy Defect Siteson Vacancy Defect Sites
∼∼∼∼8% defects in surface adsorb 18O2
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•••• TiO2 Photochemistry – Useful for Removal of Organics by Sequence of Reaction Events
i.e.hν
CH3OH H2C=O H-COOH CO2 + H2O
O2 + h O2 + h O2 + h
• Sequence of complex organic oxidation reactions makes the study of photophysics difficult
• ∴∴∴∴Investigate a simple photo reaction to obtaindetails;
hν + TiO2 h + eO2
-(a) + h O2 (g)
TiO2
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Detailed Studies of ODetailed Studies of O22
PhotodesorptionPhotodesorption from TiOfrom TiO22(110)(110)
•• Providing insight into the mechanisms Providing insight into the mechanisms of photonof photon--induced electroninduced electron--hole pair hole pair production and the activation of production and the activation of adsorbed molecules by these charge adsorbed molecules by these charge carriers.carriers.
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a)
b)
Oxygen Vacancies
h+e-c)
hν Oxygen
Photodesorption
--O
O
O
O
O
O
O
O
a)
b)
Oxygen Vacancies
h+e-
h+e-c)
hν Oxygen
Photodesorption
--O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
Mechanism for Oxygen Mechanism for Oxygen PhotodesorptionPhotodesorption from TiOfrom TiO22(110)(110)
h+ + O2-→ O2↑
•de Lara-Castells, M. P.; Krause, J. L. J. Chem. Phys. 2003, 118, 5098-5105.
OOVACVAC + O+ O22 →→ OO22--
••de Larade Lara--CastellsCastells, M. P.; Krause, J. L. , M. P.; Krause, J. L. J. J.
Chem. Phys.Chem. Phys. 2001, 2001, 115115, 4798, 4798--48104810
••de Larade Lara--CastellsCastells, M. P.; Krause, J. L. , M. P.; Krause, J. L. Chem. Phys. Chem. Phys. LettLett.. 2002, 2002, 354354, 483, 483--490.490.
••AnpoAnpo, M.; , M.; CheChe, M.; , M.; FubiniFubini, B.; , B.; GarroneGarrone, E.; , E.; GiamelloGiamello, E.; Paganini, M. , E.; Paganini, M.
C. C. TopTop. Catal. 1999, 8, 189-198.
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G. Lu, A. Linsebigler and J. T. Yates, Jr., "The Adsorption and Photodesorption of Oxygen on the TiO2(110) Surface," J. Chem. Phys. 102, 4657 (1995).
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QMSHg Lamp
and
Filters
Photodiode
Detector
Quartz
Reflector
Fhν
0.096 Fhν
Ta
TiO2
OO22 PhotodesorptionPhotodesorption from TiOfrom TiO22(110)(110)
0 10 20 30 40-2
0
2
4
6
8
10
12
14
Y
(A
x 1
0-9)
Time (s)
Fhν
= 4.08 x 1014
photons cm-2s
-1
Ehν
= 3.4 +/- 0.05 eV
T = 110 K
O2
hυ on
Tracy L. Thompson and John T. Yates, Jr. J. Phys. Chem. B, 109 (2005) 18230.
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OO22 PhotodesorptionPhotodesorption from TiOfrom TiO22(110):(110):kk11 FFhhνν
hhνν + TiO+ TiO2 2 →→ e + h e + h
kk22
h + T h + T →→ T+ T+ (hole capture by a hole trap)(hole capture by a hole trap)kk33
e + h e + h →→ heat heat (on recombination sites) (on recombination sites) kk44
h + Oh + O22--(a) (a) →→ OO22(g) (g) ↑↑
Rate of Rate of photodesorbingphotodesorbing oxygen scales oxygen scales proportionally with the square root of the incident proportionally with the square root of the incident
light intensity:light intensity:
][][
2
2 2/1
2/1
32
1
4 Oh
O
Fkk
kk
dt
dθ
θυ
+−=
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0.0 5.0x106
1.0x107
1.5x107
2.0x107
0
2
4
6
8
10
12
14
hν = 3.4 +/- 0.05 eV
T = 110 K
Flux 1/2
hν (photons
1/2cm
-1sec
-1/2)
Y0 (O
)
(Am
ps x
10-9
)
A
B
F1/2
hν (crit.)
2
18O2 Initial Photodesorption Yield – TiO2(110)
-10 0 10 20 30 40 50-2
0
2
4
6
8
10
12
14
Ion C
urr
ent (3
6 a
mu)
Time (s)
Fhν
= 4.08 x 1014
cm-2s
-1
Y (O2)
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dhν
Fhν
O2- O2
-O2- O2
-O2-O2
-O2-O2
-
TiO2 Hole trap centers (T)and average range of photogenerated holes which will be trapped.
* * **
**
**
Bulk Hole Trapping Sites Within TiOBulk Hole Trapping Sites Within TiO22
After hole trap filling, k2 ceases to contribute
to the charge exchange process.
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Careful studies of hole trapping enhancement Careful studies of hole trapping enhancement by added CHby added CH33OH have been made.OH have been made.
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Summary
• Charge carrier dynamics monitored by quantitatively studying a simple model photoreaction – O2 photodesorption.
• F rate law found – caused by second-order e-h recombination kinetics.
• Artificial enhancement of hole trapping by adding CH3OH – a hole trap molecule.
h υ
½
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QMSHg Lamp
and
Filters
Photodiode
Detector
Quartz
Reflector
Fhν
0.096 Fhν
Ta
TiO2(110)
18O2 Photodesorption from TiO2(110)
0 10 20 30 40
0
2
4
6
8
10
12
14
Y
(A
x 1
0-9)
Time (s)
Fhν
= 4.08 x 1014
photons cm-2s
-1
Ehν
= 3.4 +/- 0.05 eV
T = 110 K
O2
hυ on
18O2
YO (in 0.1s)2
o
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Kinetics of Hole TrappingKinetics of Hole Trapping--As Studied by OAs Studied by O22 PhotodesorptionPhotodesorption
•• Holes are either partially filled or completely filled by theHoles are either partially filled or completely filled by thetime the first point is measured [in time the first point is measured [in ∆∆t (sampling)].t (sampling)].
•• ∆∆t (sampling) = 0.10 secondst (sampling) = 0.10 seconds
•• Therefore, at Therefore, at FFhhνν((critcrit.):.):
•• 0.10 s x 0.10 s x FFhhνν(critical) = # photons needed to saturate holes in (critical) = # photons needed to saturate holes in photon penetration depth.photon penetration depth.
•• Photon penetration depth = ~100Photon penetration depth = ~100ÅÅ x 10x 10--88cm cm ÅÅ--11 = 10= 10--66 cmcm
•• Therefore, density of traps = ~ Therefore, density of traps = ~ FFhhνν((critcrit) x ) x ∆∆∆∆∆∆∆∆tt / 10/ 10--66 cm = ~ 3 x cm = ~ 3 x 10101818 cmcm--33
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ConclusionConclusion-- OO22 PhotodesorptionPhotodesorption Detector of Detector of Hole Trapping PhenomenonHole Trapping Phenomenon
•• First highlyFirst highly--controlled study of charge carrier controlled study of charge carrier trapping effect on TiOtrapping effect on TiO22 single crystal.single crystal.
•• Hole trapping strongly inhibits surface Hole trapping strongly inhibits surface photoreaction.photoreaction.
•• Hole trap density estimated to be ~3x10Hole trap density estimated to be ~3x101818cmcm--33..
•• This hole trap density corresponds to ~3x10This hole trap density corresponds to ~3x10--55
fraction of atomic sites in the crystal bulk.fraction of atomic sites in the crystal bulk.
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A Recent Development- Explanation of UV-Induced TiO2 Hydrophilicity
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Rong Wang, Kazuhito Hashimoto, Akira
Fujishima, Makota Chikuni, Eiichi Kojima,
Atsushi Kitamura, Mitsuhide Shimohigoshi,
Toshiya Watanabe
Nature, 388 (1997) 870-873.
“Light-Induced Amphiphilic Surfaces”
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Taken from: Fujishima, Hashimoto, Watanabe, “TiO2-Photocatalysis, Fundamentals and Applications”,
BKC Inc. Tokyo, 1999
UV
Taken from: Hata, Kai, Yamanaka, Oosaki, Hirota, Yamazaki, JSAE Review 21, 97-102, 2000
60% of Toyota automobiles already use this technology today.
UV
TiO2 - UV-induced Hydrophilicity - ApplicationsAnti-fogging
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LiquidLiquid--Solid Contact Angle MeasurementsSolid Contact Angle Measurements
γSV
γLV
γSL
θ
surface
droplet
γSV
γLV
γSL
θ
surface
droplet
As γγγγSL increases, θθθθ decreases
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This technology allows study of contact angle This technology allows study of contact angle for pure Hfor pure H22O under conditions of:O under conditions of:
-- well controlled initial surface cleanlinesswell controlled initial surface cleanliness
-- well controlled atmospherewell controlled atmosphere
-- well controlled photon fluxwell controlled photon flux
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Typical H2O Contact Angle ShowingSudden Onset of Wetting of TiO2(110)
P = 1 atm; hexane = 120 ppmO2
a
b
c
0 s
154 s
155 s
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0 50 100 150 200 2500
10
20
30
40
T = 297-302 K
P
= 1 atm
Fhν
= 1.1x1017
photons cm-2s
-1 (2.1-4.4 eV)
Phν
= 0.049 W cm-2
Region of uncertainty
O2
360 ppmhexane
120 ppmhexane
0 ppmhexane
Hexane Vapor Effect on the UV-Induced Wetting of TiO2(110)
Time (s)
θC
, C
on
tact A
ng
le (
de
gre
es)
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hν
t100 t200 t300
0
300 ppm C6H
14
200 ppm C6H
14
TiO2
O2 and C
6H
14
100 ppm C6H
14
Schematic Origin of Wetting Delay Period
He
xa
ne C
overa
ge
Induction Periods0
hν
t100 t200 t300
0
300 ppm C6H
14
200 ppm C6H
14
TiO2
O2 and C
6H
14
100 ppm C6H
14
Schematic Origin of Wetting Delay Period
He
xa
ne C
overa
ge
Induction Periods0
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0 100 200 300 400 5000
100
200
300
400
+2σ erro
r
-2σ error
R = 0.906
Hexane Effect on the Wetting Delay
of UV-Induced Wetting of TiO2(110)
We
ttin
g D
ela
y (
s)
Hexane Concentration (ppm)4 data points
P = 1 atm
T = 297-302 K
Fhν
= 1.1x1017
photons cm-2s
-1 (2.1-4.4 eV)
Phν
= 0.049 W cm-2
O2
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ConclusionsConclusions
HydrophilicityHydrophilicity model involving hydrocarbon model involving hydrocarbon
photooxidationphotooxidation to produce clean to produce clean wettablewettable
TiOTiO22 is likely to be true. is likely to be true.
-- Induction period scales with Induction period scales with ppmppm
concentration of hexane in Oconcentration of hexane in O22..
T. Zubkov, D. Stahl, T. L. Thompson, D. Panayotov, O. Diwald, and J. T. Yates, Jr.
J. Phys. Chem. B 109, 15454 (2005)
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Photochemistry on semiconductors occurs by e-h pairproduction in the substrate, accompanied by chargetransfer to adsorbed species.
Defect sites are important,- On surface for adsorption of molecules.- In bulk-promoting charge-carrier recombination.
Second-order e-h recombination can give F1/2hυυυυ
dependence of photochemical kinetics.
Hole traps reduce photochemical efficiency.
Hydrophilicity induced by UV on TiO2 - caused byphotooxidation of organic layers in equilibrium withhydrocarbons in atmosphere, causing cleanup of TiO2
surfaces.
What Have We Learned?What Have We Learned?
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AcknowledgementsAcknowledgements
Tracy L. ThompsonTracy L. Thompson University of PittsburghUniversity of PittsburghPeter MaksymovychPeter Maksymovych University of PittsburghUniversity of PittsburghDimitarDimitar PanayotovPanayotov University of Pittsburgh; Bulgarian University of Pittsburgh; Bulgarian
Academy of SciencesAcademy of SciencesSergey Sergey MezhennyMezhenny University of Pittsburgh University of Pittsburgh →→→→→→→→ University of University of
MarylandMarylandTykhon ZubkovTykhon Zubkov University of PittsburghUniversity of Pittsburgh→→ PNNLPNNLDirk StahlDirk Stahl University of PittsburghUniversity of Pittsburgh→→ LeitzLeitzOliver DiwaldOliver Diwald University of PittsburghUniversity of Pittsburgh→→ T. U. Wien, T. U. Wien,
AustriaAustriaProfessor Erich Professor Erich KnKnöözingerzinger T. U. Wien, AustriaT. U. Wien, AustriaThomas BergerThomas Berger T. U. Wien, AustriaT. U. Wien, AustriaMartin Martin SterrerSterrer T. U. Wien, AustriaT. U. Wien, Austria
This work has been supported by the Army Research Office underThis work has been supported by the Army Research Office underDr. Stephen Lee and DARPA; Also by PPG IndustriesDr. Stephen Lee and DARPA; Also by PPG Industries