power semiconductors technology outlook - 'technology outlook_epsma tc2_2016'.pdf ·...

Power semiconductors technology outlook

Francesco Di DomenicoPrincipal Application EngineeringInfineon Technologies Austria AG

November 2016

Content

HP SMPS Application Roadmap update

HV power semiconductors outlook

1

2

22016-11-07 Copyright © Infineon Technologies AG 2016. All rights reserved.

How far can the Superjunction concept beexploited in terms of RDSon*A?

CoolMOS C3CoolMOS CP

Other 1Other 2

Other 31.55 Ωmm2

CoolMOS C70.8 Ωmm2

0.01

0.10

1.00

2000 2002 2004 2006 2008 2010 2012 2014 2016 2018 2020

RD

SO

N,

ma

x×

A [Ω

mm

2]

Si Superjunction MOSFET

SiC FET

GaN HEMT

Still a long way until the limit is reached with Si super junction.Si limit potentially lower than 0.5 Ωmm2

Si superjunction limitD. Disney, G. DolnyISPSD 2008

nepi

D

p-

n+

s

ub

G

p+n

p

S

SiC and GaN devices


88

63

4540

33

0

10

20

30

40

50

60

70

80

90

100

Comp B Comp A C7 650V C7 600V C7 GOLD 650V

Footprint 150mm² Footprint 115mm²

D²PAK TOLL

RD

SO

Nm

ax

in m

Ω

RDSON/Package - D²PAK_TOLL

As a natural consequence:best RDSON/Package

› Infineon already have

the best RDSON in

D²PAK

Now improved again with C7 GOLD and

TOLL package with smaller footprint

CoolMOS™ C7

with the best

RDSON in the world

CoolMOS™

C7 GOLD is

even better


CoolMOSTM Discrete roadmap –CoolMOSTM 7 family within focus

High power ≤ 190 mΩ

Low power > 190 mΩ

Existing families Topologies

Efficiency,highest frequencies

Ease-of-use

CFD2

C6

E6

CE

in

CP

600V

700V

800V

2012 2013 2014 2015 2016 2017

Roadmap

C7-650V

C7-600V

P7-600V

CFD7-600V

P7-700V

P7-800V

PFC

PFC, LLC

PFC, LLC

ZVS, LLC

PFC, LLC, FB

FB

FB

P6

P7-600V


P7_600V CoolMOS™ - Applications

Topologies Applications

1. LLC

2. PFC (CCM and DCM PFC)

3. Flyback

TV

Server

High end PC Power

Telecom

Adapter

value

Cost/Performance series. A follower to CoolMOS™ P6 series

Well balance in ease of use and efficiency; Rdson 17mOhm up to 600mOhm


CoolMOS P7 600V: New portfolio & waves


P7 600V features & Benefits

Product Features Customer Benefits

Integrated ESD diode whereapplicable

Ensures high quality in customersmanufacturing environment

Rugged Body diodeSame part suitable in both hard switching

and soft switching topologies within the PSU i.e. PFC & LLC circuits.

Optimized Integrated RgEasy for customer to balance ease of use vs efficiency by controlling switching behavior

using external Rg selection.

Wide RDSON portfolio including

both Through Hole & SMD packages available

Suitable for many different applications bothconsumer & Industrial

Well balanced features forPerformance/Ease of Use/Price

Suitable for many different applicationsboth consumer & Industrial


600V CoolMOS™ CFD7 – Project scope

Telecom

Server

Key

applications

Topology

Resonant topologies:

ZVS Phase Shifted FB

LLC FB/HB

Key facts

› Higher switching frequencies to be reached

› Best-in-class RDS(on) offerings possible in TO and SMD packages

› Reduced switching losses enable improved light-load efficiency

› FOM RDS(on)*QG -40% vs. CFD2


CoolMOS™ CFD7 Planned Portfolio

Wave 1- leadproducts Wave 2a D9=11.2017 Wave 2b D9=06.2018 Wave 2c D9=04.2019


250 W

10 W

Du

al

sta

ge f

lyb

ack

Sin

gle

sta

ge f

lyb

ack

75 W

CoolMOSTM P7 800V mainly targets flyback based low power SMPS applications


Best-in-class efficiency and thermal performance

Best-in-class DPAK RDS(on)

CoolMOSTM P7 800V delivers best-in-class performanceas compared to competitors

Parameter P7 Comp.1 Comp.2 C3

TO-220 FP RDS(on) [Ω]

0.45 0.45 0.4 0.45

Qg [nC] 24 29 43 64

Eoss [uJ] 2.7 6.3 4.9 6.1

Ciss [pF] 770 860 1813 1583

Coss [pF] 14 35 24.7 32

280 mΩ

-56%

P7P7P7

450 mΩ

Comp.2

360 mΩ

850 mΩ

Comp.1

630 mΩBest-in-class DPAK RDS(on)

Customer benefits:

› High power density

› Lower BOM cost

› Less production cost

Customer benefits:

› Lower standby power

› Better efficiency

› Less thermal effort

› 0.5% efficiency gain

› 6°C lower MOSFET temperature

Relative efficiency [%] Relative Temperature [°C]

0.5%

0.3%-6°C

80 W LED driver 230 VAC

Comp.1

P7

Comp.2

C3

Comp.1

P7

Comp.2

C3

80 W LED driver 230 VAC

Dual stage flyback Vout=24-40 V, Iout=2.1 A


CoolMOSTM P7 800V comes with state-of-the-art ease-of-use as compared to competitors

3 3

4

3,5

1

1.5

2

2.5

3

3.5

4

4.5

5

P7 C3 Comp.1 Comp.2

Customer benefits

Easy to drive

› Avoiding MOSFET linear mode operation

› Allowing lower driving voltage

› Reducing idle loss

Easy to design in

› Increased design freedom due to tighter tolerance

> 1.6 billion parts shipped

All CoolMOSTM

Technologies

0.03 DPM on average

Over 1.6 billion parts shipped only 38 fails

38 fails

Zener

Diode

D

S

G

ESD Protection Mechanism

During ESD event:

› VGS is clamped by Zener Diode

› IGS flows through Zener Diode

› Thus protect gate oxide

S

G

VGS CGS

−

+

IGS

HBM:

› 2 – 4.5 Ω: Class 1C (1 – 2 kV )

› 0.28 – 1.4 Ω: Class 2 (2 - 4 kV )

CDM: Class C3 (≥1 kV)

CoolMOSTM P7 ESD Robustness

Customer Benefits

› Better assembling yield thus less cost

› Less field failure rate

› Higher quality and better reputation

Best-in-Class CoolMOSTM quality and reliability

Integrated Zener Diode ESD protection

Best-in--class VGS(th) and smallest VGS(th) deviation

VGS(th) and its deviation [V]


CoolMOSTM P7 800V shows similar EMI as compared to market offers tested in a IFX 45 W adapter

› EMI is a system level topic and optimization needs to be done on system level

Plug and play

Conductive EMI (dBµV)

Vertical radiative EMI (dBµV/m)

Horizontal radiative EMI (dBµV/m)


RDS(on)

[mΩ]

4500

3300

2400

1400

900

750

600

450

360

280

2000

1200

CoolMOSTM P7 offers fully optimized portfolio for target applications

Wave 1 In production Wave 2 QS in Q2 cy17

TO-220 FullPAK

IPA80R1K4P7

IPA80R900P7

IPA80R750P7

IPA80R600P7

IPA80R450P7

IPA80R360P7

IPA80R280P7

IPA80R1K2P7

TO-252 DPAK

IPD80R4K5P7

IPD80R3K3P7

IPD80R2K4P7

IPD80R1k4P7

IPD80R900P7

IPD80R750P7

IPD80R600P7

IPD80R450P7

IPD80R360P7

IPD80R280P7

IPD80R2K0P7

IPD80R1K2P7

TO-220

IPP80R1K4P7

IPP80R900P7

IPP80R750P7

IPP80R600P7

IPP80R450P7

IPP80R360P7

IPP80R280P7

IPP80R1K2P7

TO-247

IPW80R360P7

IPW80R280P7

TO-251 IPAK SL

IPS80R2K4P7

IPS80R900P7

IPS80R750P7

IPS80R600P7

IPS80R1K4P7

IPS80R2K0P7

IPS80R1K2P7

TO-251 IPAK LL

IPU80R4K5P7

IPU80R3K3P7

IPU80R2K4P7

IPU80R1K4P7

IPU80R900P7

IPU80R750P7

IPU80R600P7

IPU80R2K0P7

IPU80R1K2P7

800 V SJ MOSFET fully optimized portfolio with 12 different RDS(on)s and 6 packages

2

1C

ESD class

› Fine RDS(on) granularity

› Easy to choose right parts for fine tuning of designs


CoolMOSTM package roadmap

High power

Low power

2012 2013 2014 2015 2016 2017Product families Focus topic

Roadmap

TO-247 – 4 pin P6,C7 Low turn-on loss via Kelvin source

CP, P6, C7, P7 Small form factorThin PAK 8 x 8

G7 SMD replacement of TO247, wave solderability

TOLL

C7, P7 Topside coolingDouble DPAK/QDPAK

C7, P7 Lowest on-state resistance of 9 mΩTO-247 max

C6, E6, P7 Small form factorThinPAK 5x6

CE Cost reduction vs. DPAKSOT-223

CE/P7 Improved creepage behavior (4 mm creepage)

TO-220 wide-creepage

TO-247 – 4 pin TOLL Double DPAK SOT-223Thin PAK TO-220 wide-creepage


SMD packages as high performance enabler:TOLL vs. D²PAK

2.3mm

11.7mm9.9mm

Footprint: 115 mm²

4.4mm

Footprint: 150 mm²

30%

Footprint

Reduction

10.0mm15mm

50%

Height

Reduction

60%

Space

reduction

5nH inductance 1nH inductance


SMD packages as high performance enabler:DDPAK & QDPAK – Thermal Characteristics

QD-Pak

DD-PakTO220

TO247


1-channel Driver ICs 2-channel Driver ICs

2EDI Family

› 2x 4/8Apeak or 2x 1/2Apeak

› Isolation: Functional/Basic/Reinforced

› CMTI: > 100V/ns dyn.

› 55ns typ. propagation delay

› 4V & 8V UVLO options

› -10V robustness of inputs

› 5A reverse current robustness

› 16-pin DSO 150 / 300mil, 14-pin LGA

2EDI Family

› 2x 4/8Apeak or 2x 1/2Apeak

› Isolation: Functional/Basic/Reinforced

› CMTI: > 100V/ns dyn.

› 55ns typ. propagation delay




› 16-pin DSO 150 / 300mil, 14-pin LGA

1EDI-Compact

› 1x 4A or 10A versions

› Separate source / sink

› Isolation: Functional

› CMTI: 100V/ns (dyn.)

› 105 ns typ. prop. delay

› 9V UVLO

› 8-pin DSO (4.2 mm, 1.27 mm)

No

n-i

so

late

d

1EDN Family

› 4A source/8A sink low ohmic outputs

› Separate source / sink outputs

› 19ns typ. prop. delay (max 10ns IC2IC)




› 5-/6-pin SOT-23 & WSON

Galv

an

icall

yIso

late

d

2EDN Family

› 2x 5Apeak low impedance outputs



› - 10V robustness of inputs


› 8-pin DSO & TSSOP & WSON

2EDN Family

› 2x 5Apeak low impedance outputs



› - 10V robustness of inputs


› 8-pin DSO & TSSOP & WSON

2016/17Shipping

EiceDRIVERTM IC OverviewProduct Roadmap for SMPS and Industrial

ShippingSampling


1-channel Driver ICs 2-channel Driver ICs

2EDI Family 1EDI-Compact (IPC product)

No

n-i

so

late

d

1EDN Family

Galv

an

icall

yIso

late

d

2EDN Family

In R&DIn R&DShippingShipping

EiceDRIVERTM IC OverviewProduct Roadmap for SMPS

ShippingShippingSamplingSampling

Note: Packages are not drawn to scale

SOT23-5pins

SOT23-6pins

WSON DSO WSONTSSOP


power semiconductors technology outlook - 'technology outlook_epsma tc2_2016'.pdf ·...

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