powerpoint presentation · aalborg university, denmark “simulation including layout parasitic in...

2019 WiPDARaleigh, NC October 29- October 31

SPONSORED BY THE IEEE POWER ELECTRONICS AND ELECTRON DEVICES SOCIETIES + THE POWER SOURCES

MANUFACTURERS ASSOCIATION

7th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications

The State View Hotel 2451 Alumni Drive Raleigh, NC 27606

SCHEDULE AT A GLANCE: TUESDAYOctober 29, 2019

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Start End Agenda Item

9:00 AM 10:20 AMTutorial: “Designing for Switching Stresses in a Circuit

Breaker Application using SiC Semiconductors” DOUGLAS HOPKINS, North Carolina State University

10:20 AM 11:40 AMTutorial: “Simulation including Layout Parasitics in the Design Phase of Power Modules Reduces the Laboratory Workload”

STIG MUNK-NIELSEN, Aalborg University, Denmark

12:00 PM 1:00 PM Lunch (State View Hotel)

1:00 PM 2:20 PMTutorial: “GaN and SiC Switched Tank Converter for Data

Centers and Electric Vehicles”DONG CAO, University of Dayton

2:20 PM 3:40 PMTutorial: “Best Practices Using Voltage Acceleration to

Determine Device Reliability in High Voltage GaN”RONALD BARR, Transphorm Inc.

3:40 PM 5:00 PM

Tutorial: “Performance Evaluation and Design Considerations of HV SiC 10kV MOSFETs and SiC 15kV IGBT for Soft and Hard

Switching Medium-Voltage Converter Applications”SUBHASHISH BHATTACHARYA, North Carolina State University

5:15 PM 6:15 PMOptional Tour of FREEDM Center Power Electronics Lab

The Future Renewable Electric Energy Delivery and Management (FREEDM) is a NSF Engineering research facility at NCSU. Their goal is to develop a more secure,

sustainable environmentally friendly electric grid.

6:30 PM 8:30 PM Vendor Exhibits and Social ReceptionSynergy Ballroom

Tutorial Sessions Location: Fusion Ballroom

SCHEDULE AT A GLANCE: TUESDAYOctober 29, 2019


1:00 PM 5:00 PM ITRW Meeting (Viewpoint Room)

7:00 PM 10:00 PM JEDEC Meeting JC-70 (Viewpoint Room) (committee members and invited guests only)

MISSION

The International Technology Roadmap for Wide bandgap power semiconductors (ITRW)will provide reference, guidance and services to identify the future research andtechnology development needs of wide bandgap power semiconductors and theirapplication, and thereby provide a reliable and comprehensive view on the StrategicResearch Agenda and Technology Roadmap.

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JEDEC is the global leader in developing open standards for the microelectronics industry, with more than 3,000 volunteers representing nearly 300 member companies.JEDEC brings manufacturers and suppliers together to participate in more than 50 committees and subcommittees, with the mission to create standards to meet the diverse technical and developmental needs of the industry.Having already established important test methods and datasheet parametric standards for Power MOSFETs, JEDEC is working towards establishing standards for wide bandgap power semiconductors.JEDEC publications and standards are adopted worldwide. JEDEC is accredited by ANSI and maintains liaisons with numerous standards bodies throughout the world.

http://www.ansi.org/about_ansi/overview/overview.aspx?menuid=1

SCHEDULE AT A GLANCE: WEDNESDAYOctober 30, 2019


8:00 AM 8:15 AM Welcome AddressVICTOR VELIADIS, PowerAmerica/North Carolina State University

8:15 AM 8:45 AM

Keynote“SiC Power Devices Beyond e-mobility – a Wide Adoption in

the Industrial Landscape is Reality”PETER FRIEDRICHS, Infineon Technologies

(Fusion Ballroom)

8:45 AM 9:15 AMKeynote

“The Power SiC and GaN Market in 2019 ”KEVIN ANDERSON , IHS Markit

(Fusion Ballroom)

9:15 AM 9:40 AM Break

9:45 AM 10:45 AM

Panel Session“GaN Power Device Market Adoption – What is the Status and

What are the Barriers and Accelerators to Market Penetration?”

ALAIN CHARLES, Infineon TechnologiesSANDEEP BAHL, Texas Instruments

PETER DI MASO, GaN SystemsTIM MCDONALD, Infineon Technologies

ROBERT KAPLAR, Sandia National Laboratories(Fusion Ballroom)

10:45 AM 11:45 AM

Panel Session“Challenges and Opportunities for SiC in High Power

Applications”BRIJ SINGH, John DeereKAMIAR KARIMI, Boeing

PETER FRIEDRICHS, InfineonSATISH PRABHAKRAN, GE Global Research

SUBHASHISH BHATTACHARYA, North Carolina State UniversityDAVID GRIDER, Wolfspeed

(Fusion Ballroom)

11:45 AM 1:15 PM Lunch

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SCHEDULE AT A GLANCE: WEDNESDAYOctober 30, 2019


1:15 PM 1:45 PM

Keynote“To Use or Not to Use and How to Use – These Are the

Questions:Wide Bandgap Semiconductor Ecosystem in Power Supply

Design”LASZLO BALOGH, Texas Instruments

(Fusion Ballroom)

1:45 PM 2:15 PM

Keynote“Using GaN – Trends, Opportunities, and Challengesfrom the Perspective of a Power Converter Designer”

SANDEEP BALA, ABB(Fusion Ballroom)

2:15 PM 2:45 PM

Keynote“How to Implement SiC-based Power Modules intothe AQG 324 Automotive Qualification Guideline”THOMAS HARDER, European Center for Power Electronics

(Fusion Ballroom)

2:45 PM 3:15 PM BreakCoffee, Tea, and Refreshments

3:15 PM 4:55 PM

Technical Session 1

1A SiC Applications 1

Fusion A

1BGaN Devices 1

Fusion B

1CSiC Devices 1

Fusion C

5:30 PM 7:00 PM Poster Session(Synergy Ballroom)

7:00 PM 10:00 PM Conference Banquet (Fusion Ballroom)

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SCHEDULE AT A GLANCE: THURSDAYOctober 31, 2019



“SiC Devices: Powering the Next Generation of Electric Vehicles”JOHN PALMOUR, Wolfspeed

(Fusion Ballroom)

8:30 AM 9:00 AM

Keynote“Potential and Challenges of Medium Voltage Power Electronic Circuits

with WBG Devices”IQBAL HUSAIN, North Carolina State University

(Fusion Ballroom)


“Vertical GaN: New Medium-Voltage Power Devices on the Horizon”YUHAO ZHANG, Virginia Polytechnic Institute and State University

(Fusion Ballroom)

9:30 AM 10:00 AM Break/Session Setup PeriodCoffee, Tea, and Refreshments

10:00 AM 11:40 AM

Technical Session 2

2ASiC Applications 2

Fusion A

2BGaN Applications 1

Fusion B

2CSiC Devices 2

Fusion C

11:40 AM 1:00 PM Lunch

1:00 PM 2:40 PM

Technical Session 3


Fusion A

3BGaN Devices 2

Fusion B

3CSiC Devices 3

Fusion C

2:40 PM 3:00 PM Break/Session Setup PeriodCoffee, Tea, and Refreshments

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SCHEDULE AT A GLANCE: THURSDAYOctober 31, 2019

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1:00 PM 2:40 PM

Technical Session 4


Fusion A

4BGaN Applications 2

Fusion B

4CThermal and

Emerging Technologies

Fusion C

4:40 PM 5:00 PM Conference Wrap-upVictor Veliadis, PowerAmerica/North Carolina State University

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TUTORIAL SESSIONS OVERVIEW

Dr. Douglas HopkinsNorth Carolina State University

“Designing for Switching Stresses in a Circuit Breaker Application using SiC Semiconductors ”

Speaker BiographyDr. Hopkins is a professor in Electrical and Computer Engineering and is Director of the Laboratory for Packaging Research in Electronic Energy Systems, part of the FREEDM Systems Center, and is an affiliate faculty member in the Center for Additive Manufacturing and Logistics CAMAL, at North Carolina State University. He has over 20 years of academic and industrial experience focused on high-frequency, high density power electronic systems. He received his Ph.D. in Electrical Engineering from Virginia Tech, and spent his early career at the R&D centers of GE and Carrier Air-Conditioning Companies in advanced power electronic systems for military and commercial applications. He was co-founder of DensePower, LLC, an early launch technology company, and co-founder and general chair of the “2016 International Symposium on 3D Power Electronics Integration and Manufacturing”. He has published over 120 journal and conference articles, a number recognized with awards and is an IMAPS Fellow.

Abstract:Ultra-fast solid-state circuit breakers, including hybrid breakers, are being developed for a broad range of 1.2kV to >15kV DC distribution applications. However, the ultra-fast response within a fraction of an AC cycle allows designs to be applied also to AC. In either case the semiconductors must remain conducting during a “dwell time” at well above rated currents while startup transients or momentary fault conditions are cleared. If faults are not cleared, then the semiconductors must respond when at near-maximum junction temperature at excessive current.Typically, turn-off is under zero voltage with a dv/dt determined by the breaker topology. This Tutorial provides a detailed analysis of breaker designs and selection of proper semiconductors. The analysis includes thermal transient response showing heating typically limited to semiconductor, attachment and copper layers within the power module. The analysis looks at inherent turn-on propagation limits on a SiC MOSFET die. A full design of a solid-state breaker is given, including snubber and transient absorption layers, with impact on semiconductor selection. An actual SSCB SiC JFET design is given as a demonstration. This is intended for basic and intermediate design engineers. Hardware will be passed around.

Tuesday, October 29, 2019, 9:00 – 10:20 AM

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Tuesday, October 29, 2019, 10:20 – 11:40 AM

Dr. Stig Munk-NielsenAalborg University, Denmark

“Simulation including layout parasitic in the design phase of Power Modules reduces the laboratory work

load”

Speaker BiographyCurrent interests include cross-disciplinary cooperation between physics and electronics researchers. On the technical side, interests are power electronics hardware design with focus on including the physical circuit properties in simulations and working on new electric circuit topologies utilizing the features of WBG devices. The applications of interest are including wind turbine power converts, motor drives, induction and di-electric heating using medium and low voltage SiC and GaN device technology. Currently Professor wso of power electronics at Aalborg University, Denmark. Managed several power electronics projects including the IEPE and the MVBASIC projects.


Abstract:A few years ago, we managed to buy expensive 10kV SiC dies and the goal was to build half-bridge power modules. With zero packaging experiences, we needed luck and a way to obtain design experience without damaging the 10kV SiC dies. A simple circuit simulation model is not sufficient to evaluate the design quality, as the impact of the layout parasitic must be included to obtain an accurate behavioral model. Standard 3D drawing, FEM and circuit simulation tools enable the user to extract parasitic behavior in lumped models and then the user can do the iterative design on the computer not needing laboratory mockups. Comparing power module simulations and measurements showed excellent agreement. Today the digital design process extended to the gate-drive and dc-link implemented on four layers PCBs. A few design cases comparing simulation and laboratory results are included: A) 10kV MOSFET power module designed for low level of capacitive displacement currents. B) 2.5 MHz Class E converter using SiC dies with integrated gate-drive on DBC. C) 20 kHz GaN inverter using 650V GaN devices on DBC sandwiched to PCB. D) 500 kW 10 kV power stack including models of passive components.

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Dr. Dong CaoUniversity of Dayton

“GaN and SiC Switched Tank Converter for Data Center and Electric Vehicle ”

Speaker BiographyDong Cao received the B.S. degree from Zhejiang University, Hangzhou China, in 2005, the M.S.and Ph.D. degrees in electrical engineering from Michigan State University, East Lansing USA, in 2010 and 2012, respectively. He worked at Ford Motor Company as a core power electronics engineer for hybrid electric vehicle electrified driveline hardware development from 2012 ~ 2014. He was an assistant professor at North Dakota State University from Aug. 2014 to Aug. 2019. He will join University of Dayton at Associate Professor level as GE EPIS Center Professor in Aerospace Electric Power Systems from Aug. 2019.His research interests include emerging applications utilizing high power or high frequency wide bandgap devices e.g. SiC or GaN; high density power conversion using innovative topologies for data center and transportation electrification; health monitoring and lifetime prediction of power converters. He is the associated editor for the IEEE Journal of Emerging and Selected Topics in Power Electronics.

Tuesday, October 29, 2019, 1:00 – 2:20 PM

Abstract:In this presentation, the efficient power delivery challenges of data-center and the automotive application will be discussed. The advantages and application challenges of GaN and SiC power devices based power converters will be summarized. The limitation of magnetic materials for future high frequency and high power applications will also be reviewed. The power converter solution concept – switched tank converter that has the potential of fully leveraging the GaN and SiC power devices advantage with minimal or zero usage of magnetic materials will be presented. The development history or origin of the switched tank converters will be reviewed. The GaN based switched tank converter example for the intermediate bus converter in the data center application including the design optimization will be presented. The practical mass production challenges and solutions for the proposed switched tank converter for data center application in mass production application will be addressed. Several new application areas utilizing the GaN switched tank converter concept with the partial power regulator for high-density automotive applications and solar farm application will also be discussed. Recent advances of utilizing the SiC-based switched-tank converter for high voltage, high power (~100 kW) automotive application will be finally presented.

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Ronald BarrTransPhorm, Inc.

“Best Practices Using Voltage Acceleration to Determine Device Reliability in High Voltage GaN

Speaker BiographyRon leads the quality and reliability validation initiatives for Transphorm’s high voltage GaN power transistors. His team is responsible for defining the company’s quality standards as well performing engineering analysis of product reliability test data. Previously, Ron held similar quality and analytics roles at KLA-Tencor and Nanosys. He has also held positions at Read-Rite Corporation, Digital Equipment Corporation, Signetics and Fairchild Semiconductor with responsibilities in front end wafer fab engineering and operations. Ron holds a BS in Chemistry from Syracuse University along with an MBA in Business from Santa Clara University and has over 30 patents in design and process engineering. He is a certified manager of Quality and Organizational Excellence (ASQ CMQ/OE) and a Certified Six Sigma Black Belt (ASQ CSSBB).

Abstract:Virtually all suppliers of high voltage GaN devices are utilizing some form of voltage acceleration to determine device reliability. The purpose of this tutorial is to discuss best practices for the generation and analysis of voltage accelerated reliability data. The main topics of the tutorial are:1. Why is voltage accelerated testing useful/necessary for GaN devices. Compare and

contrast the GaN case with standard silicon MOSFETS2. Because GaN devices do not avalanche like Silicon devices it is possible to test using

voltages in excess of their rating. However GaN devices experience increased leakage as the voltage increases. How should leakage be taken into account?

3. There are many voltage models that can be used. How to select one? What are the implications of using the “wrong” model?

4. Proper and improper use of regression analysis in model building and evaluation. How to use regression analysis to determine if voltage and temperature are dependent or independent variables.

5. Differences between Early Life Failure and Lifetime Reliability testing, and how to use Voltage/Temperature acceleration testing correctly.



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Dr. Subhashish BhattacharyaNorth Carolina State University

“Performance Evaluation and Design Considerations of HV SiC 10kV and 15kV MOSFETs and SiC 15kV IGBT for Soft- and Hard-Switching Medium-Voltage Converter Applications”

Speaker BiographySubhashish Bhattacharya received his B.E. (Hons), M.E. and PhD degrees in Electrical Engineering from Indian Institute of Technology-Roorkee (formerly University of Roorkee), India in 1986, Indian Institute of Science (IISc), Bangalore, India in 1988, and University of Wisconsin-Madison in 2003. He worked in the FACTS (Flexible AC Transmission Systems) and Power Quality group at Westinghouse R&D Center in Pittsburgh which later became part of Siemens Power Transmission & Distribution, from 1998 to 2005. He joined the Department of Electrical and Computer Engineering at North Carolina State University (NCSU) in August 2005, where he is the Duke Energy Distinguished Professor, founding faculty member and co-PI of NSF ERC FREEDM Systems Center (www.freedm.ncsu.edu), Advanced Transportation Energy Center [ATEC] (www.atec.ncsu.edu) and DOE initiative on WBG based Manufacturing Innovation Institute – PowerAmerica(www.poweramericainstitute.org). He has authored over 450 peer-reviewed technical papers, 3 book chapters, and 5 issued (and 6 provisional/pending) patents to his credit. A part of his PhD research on active power filters was commercialized by York Corp. for their air-conditioner chiller application. His research interests are Solid-State Transformers, MV power converters, FACTS, Utility applications of power electronics and power quality issues; high-frequency magnetics, active filters, and application of new power semiconductor devices such as SiC for converter topologies.

Abstract:This tutorial is targeted to provide an understanding of HV SiC 10kV and 15kV MOSFETs and SiC 15kV IGBT for Soft- and Hard-Switching Medium-Voltage Converter Applications. There has been a lot of industry interests for performance evaluation of the HV SiC devices and to assess their performance under both soft- and hard-switching MV converter applications. Characterization of the HV SiC devices for both soft- and hard-switching under different circuit operating conditions, and impact on MV converter applications in terms of losses, dv/dt control, gate driver considerations and protection will be enumerated. Saber modeling results of HV SiC 10kV MOSFETs and SiC 15kV IGBT devices will be discussed to evaluate the impact for device losses under different circuit conditions and prediction of MV converter losses. Switching frequency limits of HV SiC 10kV and 15kV MOSFETs and SiC 15kV IGBT devices will be presented. Integration of hard- and soft-switching MV converters as building blocks of SST (Solid State Transformer), MV motor drives with high frequency fundamental and MV DC-DC converters will be used to evaluate the performance of HV SiC devices in MV converter applications. The above topics will be discussed in-depth and this tutorial is intended for intermediate to advanced audience.


http://www.freedm.ncsu.edu/

http://www.atec.ncsu.edu/

http://www.poweramericainstitute.org/

KEYNOTES

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Dr. Peter FriedrichsInfineon Technologies

“SiC Power Devices Beyond e-Mobility –a Wide Adoption in the Industrial Landscape is Reality”

Wednesday, October 30, 2019, 8:15- 8:45 AM

Speaker BiographyDr. Peter Friedrichs was born in 1968 in Aschersleben, Germany. After achieving his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993, he started a Ph.D work at the Fraunhofer Institut FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC power MOSFETs. In 1996 he joined the Corporate Research of the Siemens AG and was involved in the development of power switching devices on SiC, mainly power MOSFETs and vertical junction FETs. Peter Friedrichs joined SiCED GmbH & Co. KG, a company being a joint venture of Siemens and Infineon and originated from the former Siemens research group, on March the 1st, 2000. Since July 2004 he was the managing director of SiCED, responsible for all technical issues. In 2009 he achieved the Dipl.-Wirt.-Ing. From the University of Hagen. After the integration of SiCED’s activities into Infineon he joined Infineon as Senior Director Silicon Carbide from April 1st, 2011. He is a member of the ECPE board and acts as co-chair for the JEDEC JC70.2 committee. He holds numerous patents in the field of SiC power devices and technology and is an author or co/author of more than 50 scientific papers and conference contributions.

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KEYNOTES

AbstractSince 2001 SiC based power components complement the mainstream silicon technology in applications where power density and high efficiency are key drivers. Due to the cost performance ratio offered by the new technology historically certain key applications where the high component cost have been justified could be addressed, but a wide spread roll out was difficult to achieve. Examples are the use of SiC didoes in high density power supplies in the infant times of SiC between 2001 and 2010 and the next strong push by solar string inverters.

A similar situation occurred for SiC MOSFETs shortly after its introduction in the 2011/2012 timeframe, again certain areas could be addressed easily, namely solar and EV charging, but a large scale penetration into other applications was not taking place. Based on market studies and publicly available reports a significant push is expected from the EV/HEV motor drive market, but the actual timeline for the big ram is still under discussion, despite some early adaptors. Early pioneers in the field like Toyota meanwhile corrected their outlook significantly.

However, the huge industrial market becomes now more and more attractive for SiC.Initial hurdles on the technical and mental side could be addressed; design engineers become more and more familiar with the new technology and learn to mitigate the challenges when operating with ultra-fast switches at high voltages and currents. Step by step more and more applications step into the landscape of SiC utilization. Beside the early adopters solar and EV off board charging now UPS, motor drives and train application gain attention, plus numerous smaller segments where efficiency and power density matter. The keynote will give some more insides in the benefits which can be offered in those applications and will sketch the related requirements to the devices. Focus will be in addition on the different mission profiles of those applications and how those influence the device configuration and qualification.

KEYNOTES

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Kevin AndersonIHS Markit

“The Power SiC and GaN Market in 2019 ”

Wednesday, October 30, 2019, 8:45- 9:15 AM

Speaker BiographyKevin Anderson is a Sr. Research Analyst at IHS Markit. He follows and reports on the Power Semiconductor market and is part of the team that publishes the syndicated Power Semiconductor Intelligence Service. He also authors the Power Semiconductors in Automotive report and the Power Semiconductors in Data Centers Database. He often consults with clients on product, research and development and market strategies. Prior to joining IHS Markit, he spent over 30 years in new product development, marketing and strategy in the semiconductor and electronics industries, mostly focused on power and analog devices for the automotive, industrial and consumer markets. He holds two patents, has numerous publications credits and is a frequent speaker at industry events worldwide.

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KEYNOTES

AbstractThe Power SiC and GaN market has been in the incubation phase for many years. These wide bandgap semiconductors offer higher switching frequencies, higher operating temperatures and lower losses that improve power conversion efficiency. However, their adoption has been hampered by higher material costs, lack of reliability data and qualification standards and implementation knowledge as to how to extract the best performance in application circuits. These barriers to adoption are now falling as material costs are improving with additional volume, organizations such as PowerAmerica, working to advance the design-in information available to power engineers, and work by standards bodies to define and implement reliability procedures. In addition, volume shipments have begun to early adopter applications, providing real-world evidence of the benefits and ruggedness offered by these devices.This talk will provide a current view of the market for power SiC and GaN including a look at the players in the market, industry trends, market drivers and barriers, key applications and developments in the substrate market. I will also offer a summary view of the market size and growth forecast developed after research and interviews with more than 40 participants in the market.

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KEYNOTES

Laszlo BaloghTexas Instruments

“To Use or Not to Use and How to Use – These Are the Questions:

Wide Bandgap Semiconductor Ecosystem in Power Supply Design”

Wednesday, October 30, 2019, 1:15- 1:45 PM

Speaker BiographyLaszlo Balogh is the Senior Technologist of TI’s High Voltage Power business unit and aDistinguished Member of the Technical Staff at Texas Instruments. Laszlo has more than35 years of experience in power supply design, power system engineering and powermanagement integrated circuit architecture development. In recent years, Laszlofocuses on wide band gap semiconductor ecosystems and their impact on convertertopologies and control algorithms. Laszlo has authored numerous conference papers,application notes, and he is well known through his contributions to industry leadingpower supply design seminars at Unitrode, Fairchild, ON Semiconductor and TexasInstruments.

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KEYNOTES

AbstractUndeniably, wide bandgap semiconductors are slowly but steadily gaining acceptance in the power supply industry. The focus of extensive discussions about the new technology centers around three main areas: the promised higher efficiency, the opportunity to provide unprecedented power densities and demonstrating the ease of use of these devices. In order to deliver these advantages, the designers need to revisit some of the traditional design approaches and find the optimum solutions for the new challenges presented by these WBG power semiconductors. The motivation of this talk is to highlight the impact of wide bandgap semiconductor characteristics on the system and circuit designs. By examining the advantages and unique requirements of SiC and GaN power devices, the door opens wide to successfully deploy them in off-line power supply designs.

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KEYNOTES

Dr. Sandeep BalaABB Corporate Research

“Using GaN – Trends, Opportunities, and Challenges

from the Perspective of a Power Converter Designer”


Speaker BiographySandeep Bala is a Research Team Manager at ABB Corporate Research in Raleigh, North Carolina. Prior to joining ABB in December 2008, he obtained his M.S. and Ph.D. degrees in Electrical Engineering from the University of Wisconsin-Madison, where he worked on the control of power electronic converters in micro-grids. He received his Bachelor’s degree in Electrical Engineering from the Indian Institute of Technology Bombay, India.

At ABB Dr. Bala has been responsible for research on low and medium voltage power electronics technologies for applications in the future electrical grid. He has worked on and led a number of research projects on the power electronics-based volt-VAR control devices for the distribution grid, distributed energy storage units, and grid integration of offshore wind and marine renewable energy. His team currently works on using wide bandgap devices in power converters for a variety of applications, including PV inverters, UPS systems, EV chargers, and motor drives.

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KEYNOTES

Abstract650V-class GaN HEMTs are already being adopted by designers for power converters invarious applications that benefit from the unique properties of these lateral devices; forexample, in power supplies for consumer electronics and datacenters. As costs for thesedevices come down, GaN may be able to tap into its potential to supplant Si and even SiCFETs in many more applications; for example, in automotive or industrial inverters. Thereremain, however, some critical challenges that must be tackled by researchers in order toallow effective implementation of GaN in these applications. This talk will provide theperspectives of an industrial power converter designer in terms of where GaN standstoday and what needs to be done.

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KEYNOTES

Thomas HarderECPE, European Center for Power Electronics e.V.

“How to Implement SiC-based Power Modules Into

The AQG 324 Automotive Qualification Guideline”


Speaker BiographyThomas Harder is the general manager of the ECPE European Center for Power Electronics e.V. He received his diploma in Physics from Christian-Albrechts-University in Kiel, Germany. He was scientific employee (researcher) at CEM Centrum für MikroverbindungstechnikGmbH in Neumuenster/Germany in the years 1989-1996 in the research area of assembly and interconnection technology for electronics. After that, he was scientific employee (researcher) at Fraunhofer Institute for Silicon Technology (ISiT) in Itzehoe/Germany from 1996–2003 as head of the research group ´Packaging for MEMS and Multi-Chip-Modules´. Since October 1st 2003 he is the general manager of the industry-driven research network ECPE European Center for Power Electronics e.V. and ECPE GmbH in Nuremberg/Germany.

Martin RittnerRobert Bosch GmbH

Co-Author BiographyDr. Martin Rittner is senior expert for power electronics assembly and interconnection technologies in the Corporate Research unit of Bosch. He studied Physics at the University of Stuttgart/Germany and received his diploma in Nuclear Physics in 1994. Afterwards he did his PhD thesis in the field of Semiconductor Physics at the same university. Since working as research employee in the Corporate Research sector of Bosch in 2001, he attended several German and EU public funded projects in the field of electronics packaging and assembly technologies for automotive and power electronics applications. For the German automotive supplier industry he is currently the chairman of the ZVEI-ECPE working group ‘High Temperature and Power Electronics’ and additionally he is currently the chairman of the ECPE working group ‘Automotive Power Module Qualification Guideline (AQG324)’. In the year 2015, he rounded his academic skills by finalizing his economic studies and receiving the degree as Master of Business Administrations (MBA).

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KEYNOTES

AbstractThe evolutionary history, recent work and results of the industry experts’ working group founded within the ECPE are illustrated. In this so-called AQG 324 ‘Automotive Power Module Qualification Guideline’ working group, qualification routines for power modules are under expert discussions and investigations for the later usage in automotive vehicles. Considerations take place, which existing routines are incomplete or which ones are missed from the perspective of automotive requirements and what has to be implemented newly to assure automotive high-level reliability and robustness demands.

After the latest release of guideline version 2 in May 2019, that respects just rarely the upcoming situation of SiC-based power modules in automotive drive inverter applications, the focus of considerations turns now towards the demands for new power module technologies. This includes the new technology solutions, which will utilize the wide-band-gap power semiconductors at their maximum performance, and all impacts from the power semiconductor characteristic itself, especially the SiC MOSFET.

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KEYNOTES

Dr. John PalmourWolfspeed, A Cree Company

“SiC Devices: Powering the Next Generation ofElectric Vehicles”

Thursday, October 31, 2019, 8:00- 8:30 AM

Speaker BiographyDr. John W. Palmour is the Chief Technology Officer for Wolfspeed, a Cree company. He directs and conducts the Power Device, Microwave device, and materials development for Wolfspeed. He was one of the co-founders of Cree in 1987, and served on the Board of Directors for the company from 1995 to 2010. Dr. Palmour has been a leader in SiC and GaN device development for the last 30 years, and has demonstrated numerous firsts in these technology areas. He has been responsible for the development of high voltage, 4H-SiC power transistors and diodes, as well as high frequency GaN HEMTs and MMICs. During his career, he has authored or co-authored more than 380 publications and is a co-inventor on 75 U.S. patents. Dr. Palmour received his B.S. and Ph.D. degrees from North Carolina State University, Raleigh, in 1982 and 1988, respectively, where his major was in Materials Science and Engineering. Dr. Palmour became a Fellow of the IEEE in 2013.

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KEYNOTES

AbstractSiC semiconductor technology has entered a stage of rapid market adoption in the lastfew years. The reasons for this are continuous cost reduction due to improved materialdefect densities and cost, increasing volume, the high number of field hours amassedthat show SiC to be highly reliable, and the realization that SiC can reduce overallsystem cost despite having a higher component cost than silicon devices.

The bulk of SiC power device manufacturing has now migrated to the use of 150 mmsubstrates. This has allowed cost reduction, and access to a more modern andautomated tool set that has further increased device yields. As the market growsfurther, the push to 200 mm substrates is inevitable, and these have beendemonstrated in R&D already.

SiC power MOSFETs are now driving the market growth, whereas much of the marketwas based on SiC Schottky diodes in the past. SiC MOSFETs have been adopted in avariety of markets such as solar inverters, industrial power supplies, and EV on-boardand off-board chargers.

Going forward, the rapid adoption of SiC will be driven by the equally rapid adoption ofBattery Electric Vehicles (BEVs). SiC is now being targeted for use in the inverter for thedrive train of electric vehicles. This is because SiC offers a 7-10% improvement inefficiency for the motor drive, which results in either extended range for the vehicle fora given battery charge, or a reduction in the battery pack required to go a certaindistance. A large number of automotive OEMs now have SiC targeted for incorporationinto their EV drives.

In order to enable these EV drive applications, the power modules to be used requirelarge area SiC MOSFET chips delivering current in the range of 80-120 Amps per chip. Avariety of chips ranging from 650 V to 1200 V in this amperage range will be discussed.These chips were designed for the unique requirements of the power modules theywill go into. Some power module design considerations will also be discussed, thatallow one to take full advantage of the SiC performance versus the traditional Si-basedpower modules.

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KEYNOTES

Dr. Iqbal HusainNorth Carolina State University

“Potential and Challenges of Medium Voltage Power Electronic Circuits with

WBG Devices”

Thursday, October 31, 2019, 8:30 AM- 9:00 AM

Speaker BiographyProf. Iqbal Husain is the Director of the Future Renewable Electric Energy Delivery and Management (FREEDM) Engineering Research Center and the ABB Distinguished Professor at North Carolina State University where he joined in Fall 2011. Prior to coming to NC State he was serving as a faculty member at the University of Akron, Ohio was also a visiting Professor at Oregon State University. Prof. Husain also serves as the Director of Power Electronics for the PowerAmerica Institute. He received the B.Sc. degree from Bangladesh University of Engineering and Technology, Bangladesh, and the M.S. and Ph.D. degrees from Texas A&M University, College Station, Texas.Prof. Husain’s research interests are in the areas of control and modeling of electrical drives, design of electric machines, development of power conditioning circuits, inverters for distributed power generation, inverter controls for grid synchronization, and modeling and control of electric and hybrid vehicle systems. The primary application of Prof. Husain’s work is in the transportation, automotive, aerospace, power system, and renewable energy industries.Prof. Husain is a Fellow of the IEEE, and also, is the Editor-in-Chief of the IEEE Electrification Magazine. He was the General Co-Chair for Energy Conversion Congress & Expo (ECCE) 2012 in Raleigh, NC, the chairman of the IEEE-IAS Transportation Systems Committee, and the chairman of the IEEE-IAS Electric Machines Committee. Prof. Husain received the 2006 SAE Vincent Bendix Automotive Electronics Engineering Award, the 2004 College of Engineering Outstanding Researcher Award, the 2000 IEEE Third Millennium Medal, the 1998 IEEE-IAS Outstanding Young Member award, and several IEEE-IAS prize paper awards.

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KEYNOTES

AbstractAdvances in wide bandgap device technologies with their high frequency, high voltage and high temperature capabilities provide tremendous opportunities for high power and medium voltage power converter circuit developments with significant benefits in power density, energy efficiency, control bandwidth and performance at the system level. However, the very benefits of these power devices brings in design challenges that need to addressed before widespread adoption is possible. In this talk, we will address the potential near and long term applications of WBG devices, particularly high voltage (>1.2 kV) SiC devices, in the context of solid state transformers (SSTs) that are being developed for power distribution systems, electric vehicle fast chargers, data centers power supply, ship power systems, and renewable wind/solar energy integration. The challenges associated with EMI, grounding, isolation, protection, and system controls most of which arise due to the essential beneficial features of WBG devices will be discussed. Few solutions and approaches to mitigate risks in the FREEDM Center with the power electronic controls for the SST will be included.

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KEYNOTES

Dr. Yuhao ZhangVirginia Polytechnic Institute and State University

“Vertical GaN: New Medium-Voltage Power Devices on the Horizon”

Thursday, October 31, 2019, 9:00- 9:30 AM

Speaker BiographyDr. Yuhao Zhang is an assistant professor in the Center for Power Electronics Systems (CPES) at Virginia Tech. Before joining CPES, he worked as a postdoctoral associate at Massachusetts Institute of Technology (MIT) from 2017 to 2018. He received his Ph. D. and S. M., both in electrical engineering from MIT in 2017 and 2013, respectively. Prior to joining MIT, he received his B. S. in physics from Peking University in 2011 with the highest honor. He received the MIT Microsystems Technology Laboratories Best Doctoral Dissertation Award in Spring 2017, for his impactful work on vertical GaN power devices.His research interest is at the intersection of power electronics, micro/nano-electronic devices and advanced semiconductor materials. His group is currently working on the development of novel lateral and vertical GaN power devices, reliability and robustness of SiC and GaN devices, and ultra-wide bandgap power electronics.

28

KEYNOTES

AbstractGallium nitride (GaN) devices are exciting candidates for next-generation power electronics, thanks to the superior physical properties of GaN compared to Si and SiC for power applications. Recently, lateral GaN power transistors have been commercialized from 15 V to 650 V. Vertical GaN power devices are promising to expand the application space of GaN devices into the medium-voltage range. Compared to their lateral cousins, vertical GaN devices can achieve high breakdown voltage and power levels without enlarging the chip size, enable superior reliability and provide easier thermal management.Since 2013, the field of vertical GaN power devices has grown exponentially and has evolved to the point where production devices are coming. Vertical GaN pn diodes over 5 kV and Schottky barrier diodes over 2 kV have showed near-theoretical power figure of merit. Different transistor technologies, including trench MOSFETs, JFETs and two novel structures utilizing 2DEG channels (CAVETs) and fin channels (FinFETs), have been demonstrated with a voltage close to 2 kV. Large-area transistors have shown superior switching figure-of-merits to Si and SiC transistors. Pre-commercialized 1.2 kV diodes and transistors have become available recently.This talk will provide a comprehensive review of vertical GaN power device technologies, spanning materials, devices and their preliminary converter-test and reliability results. An in-depth discussion will be followed on the application space, current challenges and exciting research opportunities in this very dynamic research field.

PANEL DISCUSSIONS OVERVIEW

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GaN Power Device Market Adoption – What is the Status and What are the Barriers and Accelerators to Market Penetration?Wednesday, October 30, 2019, 9:45 – 10:45 AMFusion BallroomHas the Power GaN market adoption met manufacturers’ and customers’ projections and expectations? Why have sales revenues been revised lower every year as per published market research reports? What are the main barriers and accelerators for market penetration?

ModeratorSameh G. Khalil, Infineon Technologies

Panelists• Alain Charles, Infineon Technologies• Sandeep Bahl, Texas Instruments• Peter Di Maso, GaN Systems• Tim McDonald, Infineon Technologies• Robert Kaplar, Sandia National Laboratories

Challenges and Opportunities for SiC in High Power ApplicationsWednesday, October 30, 2019, 10:45 – 11:45 AMFusion BallroomThe SiC panel at WiPDA2019 has experts from multiple industries and academia to discuss and shed some light on the following question: what are the remaining challenges and new opportunities for SiC in high power applications ranging from electric vehicles, medium voltage motor drives, renewable energy interfaces, microgrids, to emerging applications such as electric propulsion for aircraft?

ModeratorJin Wang, The Ohio State University

Panelists• Brij Singh, John Deere• Kamiar Karimi, Boeing• Peter Friedrichs, Infineon• Satish Prabhakran, GE Global Research• Subhashish, Bhattacharya, North Carolina State University• David Grider, Wolfspeed

ORAL PRESENTATION SCHEDULE

Wednesday, October 30, 2019, 3:15 PM – 4:55 PM TECHNICAL SESSION 1

1A. SiC Applications (Fusion A)Session Chairs: Yu Du, ABB

Dong Dong, Virginia Polytechnic Institute and State University

3:15 PM – 3:40 PM Three-level Gate Driving Method for Inrush Current Suppression in a Hybrid Si+SiC based Transformer-less Medium Voltage PV InverterZhehui Guo, Hui Li

3:40 PM – 4:05 PM Efficiency Improvement and Loss Modeling of a Hybrid Switch Based T-NPC InverterHaichen Liu, Tiefu Zhao

4:05 PM – 4:30 PM Series Connection of SiC MOSFETs with Hybrid Clamping for SSTDakai Wang, Wensong Yu

4:30 PM – 4:55 PM A New Family of 7-Level Boost Active Neutral Point Clamped InverterHaider Mhiesan, Alan Mantooth

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1B. GaN Devices (Fusion B)Session Chairs: Sandeep Bahl, Texas Instruments

Eric Persson, Infineon3:15 PM – 3:40 PM Channel resistance behavior of GaN HEMTs: an experimental study

Heikki Jarvisalo, Juhamatti Korhonen, Mikko Nykyri , Pertti Silventoinen

3:40 PM – 4:05 PM Asymmetrical Substrate-Biasing Effects at up to 350 V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-BridgesStefan Moench, Richard Reiner, Patrick Waltereit, Dirk Meder, Michael Basler, Ruediger Quay, Oliver Ambacher, Ingmar Kallfass

4:05 PM – 4:30 PM Short Circuit Study of 600 V GaN GITPaige Williford, Fred Wang, Sandeep Bala, Jing Xu

4:30 PM – 4:55 PM A Reliable Ultra-Fast Short Circuit Protection Method for GaN based Gate Injection TransistorsKe Wang, Yousef M. Abdullah, Xiao Li, Jin Wang


Thursday, October 31, 2019, 10:00 AM – 11:40 AM TECHNICAL SESSION 2

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1C. SiC Devices – Short Circuits (Fusion C)Session Chair: Subhashish Bhattacharya, North Carolina State University3:15 PM – 3:40 PM Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC MOSFETs with

Various Channel Lengths Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETsKijeong Han, Ajit Kanale, B. Jayant Baliga, Subhashish Bhattacharya

3:40 PM – 4:05 PM Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-Connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Use of a Series ResistanceAjit Kanale, B. Jayant Baliga

4:05 PM – 4:30 PM Impact of Gate Oxide Thickness on Switching and Short Circuit Performance of 1200V 4H-SiC Inversion-channel MOSFETsAditi Agarwal, Ajit Kanale, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya

4:30 PM – 4:55 PM An Experimental Investigation into the Short Circuit Behavior of 15 kV 4H-SiC IGBTs under Hard-Switched FaultAshish Kumar, B. Jayant Baliga, Bhattacharya Subhashish, Victor Veliadis

2A. SiC Applications (Fusion A)Session Chairs: Brij Singh, John Deere

Liming Liu, ABB10:00 AM – 10:25 AM Switched-Capacitor Bidirectional Voltage Buck-Boost dc-ac Converter with

Single SiC LegAmeer Janabi, Bingsen Wang

10:25 AM – 10:50 AM A WBG based active reflected wave canceller for SiC motor drivesYu Zhang, Hui Li

10:50 AM – 11:15 AM A Simple Control Strategy for dv/dt Reduction in SiC MOSFET based Modular Multilevel ConvertersXiao Li, Jianyu Pan, Ziwei Ke, Jia Niu, Liu Rui, Zhang Yue, Na Risha, Wang Jin

11:15 AM – 11:40 AM Contactless Medium Voltage Supply Directly to Data-center Server Racks using SiC-Based ConverterSuvendu Samanta, Richard Beddingfield, Isaac Wong, Subhashish Bhattacharya, Birger Pahl


2B. GaN Applications (Fusion B)Session Chair: Peter Di Maso, GaN Systems

10:00 AM – 10:25 AM A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static LossesMichael Basler, Stefan Moench, Richard Reiner, Patrick Waltereit, Ruediger Quay, Ingmar Kallfass, Oliver Ambacher

10:25 AM – 10:50 AM Comparative Study of Variable-Ratio Modular Multilevel Switched Capacitor Dc/dc Converter TopologiesYue Zhang, Yizhou Cong, Xiao Li, Jin Wang

10:50 AM – 11:15 AM An Investigation of Current Distribution Over Four GaN HEMTs in Parallel ConfigurationThilini Wickramasinghe, Cyril Buttay, Martin Christian, Herve Morel, Pascal Bevilacqua, Thanh-Long Le, Stephane Azzopardi, Jean-Fracois Mogniotte, Allard Bruno, Joubert Charles

11:15 AM – 11:40 AM A Flip-Chip Capable Low-Side and High-Side SOI Gate Driver with Variable Drive Strength for GaN Power FETsRobert Murphree, Sajib Roy, Affan Abbasi, Pourya Assem, Robert Pilawa-Podgurski, Alan Mantooth

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2C. SiC Advanced Devices (Fusion C)Session Chair: Anant Agarwal, The Ohio State University10:00 AM – 10:25 AM Design and Simulation of 600V 4H-SiC Superjunction JBS Diode

Xixi Luo, Alex Huang

10:25 AM – 10:50 AM A New Junction Barrier Schottky Diode Using a Novel Lateral Architecture on a 4H-SiC SubstrateJustin Lynch, Nick Yun, Sung Woongje

10:50 AM – 11:15 AM Switching and Robustness Capability of 4000 V/40 mOhm SiC DMOSFETsVamsi Mulpuri, Sumit Jadav, Siddarth Sundaresan, Ranbir Singh

11:15 AM – 11:40 AM Numerical Simulation Model Development and Comparative Analysis of Low-voltage SiC BJT for Compact ModelingArman Ur Rashid, Md Maksudul Hossain, Sajib Roy, Alex Metreveli, Alan Mantooth, Carl M. Zetterling


1:25 PM – 1:50 PM Isolated Active-Clamped SEPIC based on SiC Devices with Integrated MagneticsDeliang Wu, Rajapandian Ayyanar

1:50 PM – 2:15 PM Direct Power Control for Dual Active Bridge Converter with Parabolic CarrierYunting Liu, Xiaorui Wang, Wei Qian, Ameer Janabi, Bingsen Wang, Xi Lu, Ke Zou, Chingchi Chen, Fang Peng

2:15 PM – 2:40 PM Drive Cycle Based Multi-Objective Optimization of 50kW SiC Composite Converter System for Electric VehiclesAritra Ghosh, Manuel Cereijido Fernandez, Dragan Maksimovic, Robert Erickson

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Thursday, October 31, 2019, 1:00 PM – 2:40 PMTECHNICAL SESSION 3

3A. SiC Applications (Fusion A)Session Chairs: Mark Scott, Miami University1:00 PM – 1:25 PM Design, and Control of a SiC Isolated Bidirectional Power Converter for V2L

Applications to both DC and AC LoadXiaorui Wang, Yunting Liu, Wei Qian, Ameer Janabi, Bingsen Wang, Xi Lu, Ke Zou, Chingchi Chen, Fang Peng

3B. GaN Devices (Fusion B)Session Chair: Andrew Binder, Sandia National Laboratories1:00 PM – 1:25 PM ESD Behavior of GaN-on-Si power devices under TLP/VFTLP measurements

Wen Yang, Nicholas Stoll, Jiann-Shiun Yuan, Balakrishnan Krishna

1:25 PM – 1:50 PM On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD CapabilityDavid Zhou

1:50 PM – 2:15 PM Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMTKarthick Murukesan, Loizos Efthymiou, Florin Udrea

2:15 PM – 2:40 PM Design Consideration for Characterization and Study of Dynamic On State Resistance of GaN DevicesChondon Roy and Babak Parkhideh


4A. SiC Applications (Fusion A)Session Chairs: Dong Dong, Virginia Polytechnic Institute and State University

Brij Singh, John Deere3:00 PM – 3:25 PM A Comprehensive PD Study Method on Power Modules with Ultra-high dv/dt Output

Haoyang You, Zhuo Wei, Boxue Hu, Risha Na, Jin Wang

3:25 PM – 3:50 PM SiC versus Si Free-wheeling Diodes: A Comparative Study of their Impact on IGBT Turn-off Vce OvershootArun Kadavelugu, Maziar Mobarrez, Eddy Aeloiza and Rostan Rogrigues

3:50 PM – 4:15 PM PCB Busbar Optimization for High Power SiC ModuleLuowei Wen, Li Yang, Wensong Yu, Iqbal Husain

4:15 PM – 4:40 PM Characterization of a Silicon Carbide BCD Process for 300C CircuitsAffan Abbasi, Sajib Roy, Robert Murphree, Arman-Ur Rashid, MD Maksudul Hossain, Pengyu Lai, Tobias Erlbacher, John Fraley, Zhong Chen, Alan Mantooth

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3C. SiC Devices– Reliability & Applications (Fusion C)Session Chair: Brett Hull, Wolfspeed, A Cree Company1:00 PM – 1:25 PM Surge Current Capability of SiC JFETs in AC Distribution Systems

Yuzhi Zhang, Pietro Cairoli, Rostan Rodrigues, Taosha Jiang

1:25 PM – 1:50 PM Fowler-Nordheim Tunneling Current and Time-Dependent Dielectric Breakdown of Commercial 1.2 KV 4H-SiC MOSFETsTianshi Liu, Susanna Yu, Diang Xing, Minseok Kang, Arash Salemi, Marvin White, Anant Agarwal

1:50 PM – 2:15 PM Detailed Study of Breakdown Voltage and Critical Field in Wide Bandgap SemiconductorsFranklin Nouketcha, Aivars Lelis, Ronald Green, Yumeng Cui, Christopher Darmody, Neil Goldsman

2:15 PM – 2:40 PM Demonstration of New Generation 10kV SiC MOSFET Modules in Medium Voltage Power ConvertersSanket Parashar, Ashish Kumar, Venkat Jakka, Subhashish Bhattacharya, Victor Veliadis

Thursday, October 31, 2019, 3:00 PM – 4:40 PMTECHNICAL SESSION 4


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4B. GaN Applications (Fusion B)Session Chair: Deliang Wu, Arizona State University3:00 PM – 3:25 PM A 3 kW 500 kHz E-mode GaN HEMT based Soft-switching Totem-pole PFC

Nikhil Korada, Raja Ayyanar

3:25 PM – 3:50 PM Zero Voltage Switching Switched-Tank Modular Converter for Data Center ApplicationMengxuan Wei, Yanchao Li, Ze Ni, Chengkun Liu, Dong Cao

3:50 PM – 4:15 PM Evaluation of EMI in GaN and Si based Isolated DC/DC ConvertersHanging Nie, Yujie Bai, Mark Scott

4:15 PM – 4:40 PM GaN HEMT Outperforms Silicon in Low Frequency ApplicationsLei Kou, Lucas Lu

4C. Thermal Management and Emerging Technologies (Fusion C)Session Chair: Doug Hopkins, North Carolina State University3:00 PM – 3:25 PM Novel Doping Engineering Techniques for Gallium Oxide MOSFET to Achieve High

Drive Current and Breakdown VoltageJohan Saltin, Shiyang Tian, Fei Ding, Hiu Yung Wong

3:25 PM – 3:50 PM Thermal Conductivity of Power Semiconductors--When Does It Matter?Lauren Boteler, Aivars Lelis, Morris Berman, Michael Fish

3:50 PM – 4:15 PM Overload and Short Circuit Thermal Load for Aluminum Wire Bonding in WBG Power SemiconductorsTaosha Jiang, Rostan Rodrigues, Yu Du, Yuzhi Zhang, Pietro Cairoli

4:15 PM – 4:40 PM Thick CVD-Grown Graphene Nanomaterial for Thermal Management of High-Power Switching TransistorsVishank Talesara, Paul Garman, L. James Lee, Wu Lu


Poster Session Synergy BallroomSession Chairs: Ali Salih, ON Semiconductor

Dong Cao, University of DaytonVictor Veliadis, PowerAmerica/North Carolina State University

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• Experimental Evaluation of Time-Dependent Dielectric Breakdown for GaN MIS HEMTs under Various Substrate BiasesWen Yang, Jiann-Shiun Yuan, Balakrishnan Krishnan and Patrick Shea

• Bevel Edge Termination for Vertical GaN Power DiodesAndrew Binder, Jeramy Dickerson, Mary Crawford, Greg Pickrell, Andrew Allerman, Paul Sharps and Robert Kaplar

• Automatic Big Data Acquisition of Electrical Parameters in Wide Bandgap DevicesChengkun Liu, Ze Ni, Mengxuan Wei, Aaron Niehaus and Dong Cao

• 650 V p-GaN Gate Power HEMTs on 200 mm Engineered SubstratesKaren Geens, Xiangdong Li, Ming Zhao, Weiming Guo, Dirk Wellekens, Niels Posthuma, Dirk Fahle, Ozgur Aktas, Vlad Odnoblyudov and Stefaan Decoutere

• Design Considerations of LLC Resonant Converters Based on Parameter Sensitivity AnalysisWeikang Wang, Yang Liu, Zeyu He and Jin Zhao

• An Optimization Framework for GaN Power Device Design and ApplicationsMichael Hontz, William Collings, Alan Courtay and Raghav Khanna

• Implementation and Characterization of Point Field Detectors for Current Mismatch Measurements in Paralleled GaN HEMTsHossein Niakan and Parkhideh Babak

• Switching Performance Evaluation of 1200 V Vertical GaN Power FinFETsHengyu Wang, Ming Xiao and Yuhao Zhang

POSTER PRESENTATIONS

GaN Devices

Poster Session (cont.) Synergy Ballroom

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• DC Voltage Control of Inverter Interfaced Dual Active Bridge Converter for V2L applicationsYunting Liu, Xiaorui Wang, Wei Qian, Ameer Janabi, Bingsen Wang, Xi Lu, Ke Zou, Chingchi Chen andFang Peng

• Efficiency and Thermal Analysis of Si and SiC-Based Bidirectional DC-DC Converters for TransactiveEnergy SystemsMd Multan Biswas and Dhiman Chowdhury

• Active Voltage Clamping for Series Connected 1.7 KV SiC MOSFETs for Solid State Circuit BreakerApplicationMuhammad Foyazur Rahman, Tiancan Pang, Nazmus Sakib, Ehab Shoubaki and Madhav Manjrekar

• Why Wideband Gap Needs Techno-economicsSamantha Reese, Akanksha Singh, Andriy Zakutayev, Sertac Akar and Timothy Remo

• Efficiency Maximization Using SiC Multi-Die Asymmetric Configuration for Composite ConvertersAritra Ghosh, Dragan Maskimovic and Robert Erickson

• Design of a Multi-winding Transformer for a Fully SiC-Based Triple-Active-Bridge ConverterConsidering the Effect of Device Transient BehaviourZhenyu Wang and Alberto Castellazzi

• Effects of Aging and Temperature on Supercapacitor Peukert ConstantKaren Geens, Xiangdong Li, Hengzhao Yang

• Comparative Study of Power Semiconductor Devices Using Saber-Simulink Co-simulationKenneth Mordi, Md Maksudul Hossain, Dereje Woldegiorgis, Haider Mhiesan and Alan Mantooth

• High Frequency ZVT Converter for Variable DC-link in Electric Vehicle Traction DriveDeliang Wu, Bassam Raza and Rajapandian Ayyanar

• A High-Bandwidth Resistive Current Sensing Technology for Breakers and Desaturation ProtectionBo Gao, Utkarsh Mehrotra and Douglas C. Hopkins

• Effects of Basal Plane Defects on the Performance of Voltage Source ConvertersAmel Lachichi and Phil Mawby

POSTER PRESENTATIONS

SiC Applications

Poster Session (cont.) Synergy Ballroom

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• Switching Loss Characterization of GaN-based Buck Converter under Different Substrate BiasesMd Safayatullah, Wen Yang, Jiann-Shiun Yuan and Balakrishnan Krishnan

• Hybrid Operation of a GaN Three-Level T-type Inverter for Pulse Load ApplicationsHarish Pulakhandam, Subhashish Bhattacharya, Tom Byrd

• Advantages of GaN in Phase Shift Full BridgesFeng Qi, Zhan Wang and Yifeng Wu

• 900V GaN FETs in a 300kHz 2kW LLC for High Input Voltage ApplicationsFeng Qi, Zhan Wang, Yifeng Wu and Philip Zuk

• High Resolution Signal Generation and Management in Fast Switching Power Electronic SystemsYashar Naeimi, Srdjan Lukic and Iqbal Husain

• ZVS Analysis of a GaN-Based Series-Parallel Dual Transformer LLC Resonant ConverterNathan Strain, Jingjing Sun, Daniel Costinett and Leon Tolbert

• Investigation of ESD Protection in SiC BCD ProcessPengyu Lai, Hui Wang, Affan Abbasi, Sajib Roy, Arman Rashid, Alan Mantooth and Zhong Chen

• High-Performance 4H-SiC Planar 700 V MOSFETs for the Industrial MarketAmaury Gendron-Hansen, Changsoo Hong, Yifan Jiang, Dumitru Sdrulla, Bruce Odekirk and AvinashKashyap

• Body Diode Reliability of Commercial SiC Power MOSFETsMinseok Kang, Susanna Yu, Diang Xing, Tianshi Liu, Arash Salemi, Marvin White and Anant Agarwal

• Bias-induced Threshold voltage instability and Interface trap density extraction of 4H-SiC DMOSFETsSusanna Yu, Tianshi Liu, Diang Xing, Minseok Kang, Arash Salemi, Marvin White and Anant Agarwal

• High-Power Pulsed Evaluation of High-Voltage SiC N-GTOMichihiro Shintani, Hiroki Tsukamoto and Takashi Sato

• Active Voltage Balancing Methodology for Series connection of 1700V SiC MOSFETsSanket Parashar, Eddy Aeloiza and Subhashish Bhattacharya

• Avalanche Ruggedness of Series Connected SiC MOSFETsAshish Kumar, Subhashish Bhattacharya and Victor Veliadis

• Use of Non-Constant Size Moving Meshes for Analysis and Synthesis of Integrated SiC Power ModulesOlufisayo Olanrewaju, Nathan Evans, Asad Fayyaz, Thomas Lagier, Alberto Castellazzi

POSTER PRESENTERS

GaN Applications

SiC Devices

GENERAL INFORMATION

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SPEAKER INFORMATIONIt is mandatory that each technical speakermeet with the session chair in thedesignated room during the Session SetupPeriod to transfer the presentation files tothe computer. The session setup periodsoccur before the morning technical sessionand again before the afternoon technicalsession. Please consult the schedule.

POSTER PRESENTERSPosters should be 24”W x 36”H. Posterswill be on display on Wednesday, October30th, 5:30 PM – 7:00 PM at the Synergyballroom. It is mandatory that posters bedisplayed in advance of the posterpresentation session and remain displayedduring the entire session. A posterpresenter must remain near the posterand be available to discuss during theentire session.

REGISTRATION & HELP DESKThroughout the duration of theconference, the registration desk willremain staffed for the convenience of theparticipants. Any conference or programquestions, including at-conferenceregistration, may be directed to this helpdesk; when the conference is not insession, The State View Hotel staff isavailable to assist at the hotel’s front desk.

CAMERAS & RECORDING DEVICESThe use of cameras and/or recorders isstrictly prohibited during the oral andposter sessions. Limited use is allowed forExhibitors in their own booth area.Personal photography is allowed at socialfunctions.

ACCESSIBILITY FOR REGISTRANTSThe meeting staff will work with attendeesto provide reasonable accommodations forthose who require special needs. Torequest assistance on-site, please check inat the Registration & Help Desk

THINGS TO DO AND SEE IN RALEIGH• Carolina Hurricanes NHL Hockey at PNC

Arena• Dorothea Dix Park• The NC Museums of Art and Sculpture

Garden• NC Museum of History and NC Museum

of Natural Sciences • The NC State Capitol Building• Morgan Street and Transfer Co. Food

Halls• NC State Women’s Basketball Game at

Reynolds Coliseum (Free)• Pullen Park

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