project prism optronics: protection & surveillance
DESCRIPTION
Project PRISM Optronics: Protection & Surveillance. Dr Dirk Bezuidenhout CSIR. Universities Involved. Stellenbosch Physics (Dr E Rohwer) Process Eng (Prof H Knoetze) NMMU Physics (Prof J Engelbrecht) Rhodes Chemistry (Prof T Nyokong) UKZN Computer Science (Prof J-R Tapamo) - PowerPoint PPT PresentationTRANSCRIPT
Project PRISMProject PRISMOptronics: Protection & Optronics: Protection &
SurveillanceSurveillanceDr Dirk Bezuidenhout
CSIR
Universities InvolvedUniversities Involved
StellenboschPhysics (Dr E Rohwer)Process Eng (Prof H Knoetze)
NMMUPhysics (Prof J Engelbrecht)
RhodesChemistry (Prof T Nyokong)
UKZNComputer Science (Prof J-R Tapamo)Physics (Dr V Couling)
Universities InvolvedUniversities Involved
UJ Electr. & Electronic Eng. (Dr W Clarke)
UPMathematics (Dr R Anguelov)
TUTFrench South African Technical Institute in Electronics (Prof B van Wyk)
Number of StudentsNumber of Students
Nine Departments
Eight Disciplines
Number of Students: 22
PRISM-L: LasersPRISM-L: Lasers
Light SourcesCountermeasuresBeam Propagation
High-power end-pumped High-power end-pumped Nd:YLFNd:YLF
A OM
P um p d iode 1 P um p d iode 2
OC
N d:YLF
R = - 30 m m
R = 150 m m
L1
Reverse Saturable AbsorptionReverse Saturable Absorption
Fibre Laser LaboratoryFibre Laser Laboratory
PRISM-P: PyrophoricsPRISM-P: Pyrophorics
PyrophoricsPyrophorics
Interface with Project COUPLE
Semi- conductor MaterialsSemi- conductor Materials
0.30 0.32 0.34 0.52 0.54 0.56 0.58 0.60 0.62 0.64 0.66 0.680.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Wa
vele
ng
th (
nm
)
400
600
800
1000
2000
SiC
HgTe
CdTe
ZnOGaN
InP
AlSb
InAs InSb
GaSb
AlAsGaP
GaAs
SiEn
erg
y G
ap
(e
V)
Lattice constant (nm)
Bandgap ModificationBandgap ModificationB
an
dg
ap
En
erg
y [
eV
]
0.0 0.2 0.4 0.6 0.8 1.0
0.15
0.25
0.35
0.45
Lat
tice
-mat
ched
to G
aSb
Wa
vele
ng
th [
nm
]
15000
100008000
6000
5000
4000
30003.537 μm
0.089
2 K
300 K
InSbInAs
Sb mole fraction x
4.218 μm
InAs1-XSbX
Bandgap spans strategic 3-7 μm range at low T
Backside IlluminationBackside Illumination
Development of InAs0.91Sb0.09/GaSb backside-illuminated detector
λcut-off ~3.6 μm at 77 K
n:GaSb Substrate
n:InAs
p:InAsSb
Optical Limiters: Electronic Optical Limiters: Electronic structurestructure 2 photon absorption
Singlet states S, triplets TCross sections σ Inter-System Crossing
Desirable properties:high triplet quantum yield σex >> σg
rapid inter-system crossinga long lifetime τT in the triplet stateoptical stabilityHigh damage thresholds for the material
Metallo-phthalocyanines, MPcMetallo-phthalocyanines, MPc
Unsubstituted MPcSubstituted MPc
Peripheral substituent
Axial substituent
SymmetrySymmetryZnPc
-0.15
-0.1
-0.05
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0 1 2 3 4 5 6 7 8
r /Å
z /Å
C2v dome shape is energy minimum
C2v
Highest Occupied Molecular Highest Occupied Molecular Orbital Orbital
ResultsResults
Vibrational frequencies
0
1
2
3
4
5
6
40060080010001200140016001800
Frequency
IR i
nte
nsit
y
Image ProcessingImage Processing
Optical Surveillance PathOptical Surveillance Path
Solar GlintSolar Glint
Discreet Pulse TransformsDiscreet Pulse TransformsDevelop a method for the decomposition of images into 2D block pulsesAnalysis of sea images via discrete pulse decompositionCharacterization of the images of marine background in varying conditionsDeveloping algorithms for identifying anomalies in a sea imageAlgorithms for target detection using the discrete pulse decomposition of the image
Image Processing and Optical Image Processing and Optical TrackingTracking
Optical TrackingOptical Tracking
Image ProcessingImage Processing
Solving the Heat Scintillation Problem in Images(Rishaad Abdoola)
Robust Real-Time Motion Detection
(Petrus Nyathela)
Gated Camera ApplicationsGated Camera Applications
Stress Induced BirefringenceStress Induced Birefringence
Birefringence Map for doublet
QuestionsQuestions