r6015anx : transistors

Datasheet

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.02 - Rev.B

R6015ANX Nch 600V 15A Power MOSFET

Bulk

-

Type

Packing

mJ

V

15

Tape width (mm) -

Reel size (mm)

Value

V

500

±15

±30

A

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current 7.5

-

EAR *4 mJ

A

3.5

R6015ANX

Unit

600

EAS *3

ID,pulse *2

ID *1 ±7.0

V/ns

150

°C

W

°C

15

−55 to +150

50

Reverse diode dv/dt

IAR *3

Range of storage temperature Tstg

Power dissipation (Tc = 25°C)

dv/dt *5

Junction temperature

PD

Tj

A

A

Symbol

Basic ordering unit (pcs)

Pulsed drain current

Switching Power Supply

VDSS

ID *1

VGSS

±60

Marking

Taping code

1) Low on-resistance.

6) Pb-free lead plating ; RoHS compliant

Gate - Source voltage

Parameter

Tc = 25°C

Drain - Source voltage

Absolute maximum ratings (Ta = 25°C)

Tc = 100°C

Features

50W

Continuous drain current

3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Application

4) Drive circuits can be simple.

2) Fast switching speed.

Outline

Inner circuit

Packaging specifications

TO-220FM600V0.3Ω15A

5) Parallel use is easy.

VDSS

RDS(on) (Max.)IDPD

(1) Gate (2) Drain (3) Source

*1 Body Diode

(1) (2) (3)

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

Data SheetR6015ANX

2/13 2012.02 - Rev.B

ΩGate input resistance RG f = 1MHz, open drain - 10.5 -

Static drain - sourceon - state resistance RDS(on)

*6 ΩTj = 25°C - 0.23 0.3

Tj = 125°C - 0.46 -

VGS = 10V, ID = 7.5A

Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2.5

Gate - Source leakage current VGS = ±30V, VDS = 0V

-

700

Tj = 25°C

Drain - Source avalanchebreakdown voltage -

600

-IDSS

IGSS -

V(BR)DS

Symbol Conditions Values

-

- 70

°C

-

-

±100-

-

4.5

0.1

-

V

Symbol

-

Unit

°C/W

-

2.5-

-

nA

V/nsTj = 125°C

Tj = 125°C

50

V

RthJC

265

µA100

1000

Parameter

Zero gate voltagedrain current

V(BR)DSS

VGS = 0V, ID = 15A

VGS = 0V, ID = 1mA

Values

Parameter

Drain - Source breakdownvoltage

VDS = 600V, VGS = 0V

ConditionsSymbol

Absolute maximum ratings

Thermal resistance

Thermal resistance, junction - case

Parameter

Max.

V

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

Electrical characteristics (Ta = 25°C)

Drain - Source voltage slope dv/dtVDS = 480V, ID = 15A

-

Typ.

Values

Typ.

°C/W

UnitMax.

Unit

Tsold

RthJA

Min.

Min.


Data SheetR6015ANX

3/13 2012.02 - Rev.B

*1 Limited only by maximum temperature allowed.

*2 PW ≤ 10µs, Duty cycle ≤ 1%

*3 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C

*4 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

Max.

Reverse transfer capacitance

Electrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ.

11Transconductance

Input capacitance

4.5

Output capacitance Coss VDS = 25V -

- S

Ciss VGS = 0V - 1700 -

gfs *6 VDS = 10V, ID = 7.5A

pF

-

pF

- 79 -

- 80

-

Crss f = 1MHz - 80 -

1120

Turn - on delay time td(on) *6 VDD ⋍ 300V, VGS = 10V -

Effective output capacitance,energy related

Effective output capacitance,time related

Co(er)

Co(tr)

VGS = 0VVDS = 0V to 480V

ns150 300

60 120

-50

-

RG = 10Ω -

RL = 40Ω -

-

Gate Charge characteristics (Ta = 25°C)

Rise time tr *6 ID = 7.5A

SymbolValues

50

Typ.

Turn - off delay time td(off) *6

Fall time tf *6

Total gate charge

Gate - Source charge Qgs *6 ID = 15A

Qg *6 VDD ⋍ 300V

VGS = 10V

Unit

- 8 -

Min.

nC

50 -

Conditions

20 -

-

Max.Parameter

6.0

-

VGate plateau voltage V(plateau) VDD ⋍ 300V, ID = 15A - -

Gate - Drain charge Qgd *6


Data SheetR6015ANX

4/13 2012.02 - Rev.B

- A

A

A

1.5 V

ns

60

15

-

Rth1

Peak rate of fall of reverserecovery current

dirr/dt

Symbol Value

Typical Transient Thermal Characteristics

700

Symbol Value Unit Unit

-

Rth3 2.14 Cth3 0.507

A/µs-Tj = 25°C

0.00318

K/W Ws/KRth2 0.662 Cth2 0.0429

0.117 Cth1

-

Qrr *6

Irrm *6

IS *1

ISM *2

-

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

- 6.3 - µC

VSD *6 VGS = 0V, IS = 15A

Typ.

Forward voltage

Reverse recovery time

Tc = 25°C

IS = 15Adi/dt = 100A/µs

482

- -

-

UnitMin. Max.

Peak reverse recovery current

Parameter Symbol ConditionsValues

Reverse recovery charge

trr *6

-

Inverse diode continuous,forward current

Inverse diode direct current,pulsed

- 26

-


Data SheetR6015ANX

5/13 2012.02 - Rev.B

Electrical characteristic curves

0

20

40

60

80

100

120

0 50 100 150 200

0.0001

0.001

0.01

0.1

1

10

100

1000

0.0001 0.01 1 100

Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W

top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single

Fig.1 Power Dissipation Derating Curve

Pow

er D

issi

patio

n :

P D/P

D m

ax. [

%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Dra

in C

urre

nt :

I D [A

]

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e : r

(t)

Pulse Width : PW [s]

0.01

0.1

1

10

100

0.1 1 10 100 1000

PW = 10ms

PW = 100us

PW = 1ms

Operation in this area is limited by RDS(ON)

Ta = 25ºC Single Pulse


Data SheetR6015ANX

6/13 2012.02 - Rev.B


0

1

2

3

4

5

6

7

8

9

10

0.01 0.1 1 10 100

Ta = 25ºC VDD = 50V , RG = 25Ω VGF = 10V , VGR = 0V

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

Fig.4 Avalanche Current vs Inductive Load

Aval

anch

e C

urre

nt :

I AR [A

]

Coil Inductance : L [mH]

Fig.5 Avalanche Power Losses

Aval

anch

e Po

wer

Los

ses

: PAR

[W]

Frequency : f [Hz]

Fig.6 Avalanche Energy Derating Curve vs Junction Temperature

Aval

anch

e En

ergy

: E A

S / E

AS m

ax. [

%]

Junction Temperature : Tj [ºC]

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

1.0E+04 1.0E+05 1.0E+06

Ta = 25ºC


Data SheetR6015ANX

7/13 2012.02 - Rev.B


Fig.7 Typical Output Characteristics(I)

Dra

in C

urre

nt :

I D [A

]


Fig.8 Typical Output Characteristics(II)

Dra

in C

urre

nt :

I D [A

]


Fig.9 Tj = 150°C Typical Output Characteristics(I)

Dra

in C

urre

nt :

I D [A

]


Fig.10 Tj = 150°C Typical Output Characteristics(II)

Dra

in C

urre

nt :

I D [A

]


0

3

6

9

12

15

0 5 10 15 20

5.0V

VGS= 4.5V

6.0V 7.0V

8.0V 6.5V

10V Ta = 25ºC Pulsed

5.5V

0

5

10

15

0 1 2 3 4 5

VGS= 4.5V

5.0V

6.0V

5.5V 6.5V 7.0V

8.0V

10V Ta = 25ºC Pulsed

0

3

6

9

12

15

0 5 10 15 20

Ta = 150ºC Pulsed

5.5V

VGS = 4.5V

10V

6.0V

0

3

6

9

12

15

0 1 2 3 4 5

Ta = 150ºC Pulsed

VGS= 4.5V

10V

5.0V 6.0V


Data SheetR6015ANX

8/13 2012.02 - Rev.B


500

550

600

650

700

750

800

850

900

-50 0 50 100 150

0

1

2

3

4

5

6

-50 0 50 100 150

VDS = 10V ID = 1mA

0.001

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VDS = 10V Pulsed

Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC

Fig.11 Breakdown Voltage vs. Junction Temperature

Dra

in -

Sour

ce B

reak

dow

n Vo

ltage

: V

(BR

)DSS

[V]


Fig.12 Typical Transfer Characteristics

Dra

in C

urre

nt :

I D [A

]

Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage vs. Junction Temperature

Gat

e Th

resh

old

Volta

ge :

VG

S(th

) [V]


Fig.14 Transconductance vs. Drain Current

Tran

scon

duct

ance

: g f

s [S]

Drain Current : ID [A]

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7

VDS = 10V Pulsed

Ta= 125ºC Ta= 75ºC Ta= 25ºC

Ta= −25ºC


Data SheetR6015ANX

9/13 2012.02 - Rev.B


0

0.1

0.2

0.3

0.4

0.5

0.6

0 5 10 15

ID = 7.5A

ID = 15A

Ta = 25ºC Pulsed

0

0.1

0.2

0.3

0.4

0.5

0.6

-50 0 50 100 150

ID = 7.5A

ID = 15A

VGS = 10V Pulsed

0.01

0.1

1

10

0.001 0.1 10

VGS = 10V Pulsed

Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = −25ºC

Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [Ω

]

Gate - Source Voltage : VGS [V]

Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [Ω

]

Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State Resistance vs. Drain Current

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [Ω

]



Data SheetR6015ANX

10/13 2012.02 - Rev.B


0

2

4

6

8

10

12

14

0 200 400 600

Ta = 25ºC

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Ciss Coss

Crss

Ta = 25ºC f = 1MHz VGS = 0V

1

10

100

1000

10000

0.01 0.1 1 10 100

tr

tf

td(on)

td(off)

Ta = 25ºC VDD ⋍ 300V VGS = 10V RG = 10Ω Pulsed

0

5

10

15

0 10 20 30 40 50 60 70

Ta = 25ºC VDD ⋍ 300V ID = 15A RG = 10Ω Pulsed

Fig.18 Typical Capacitance vs. Drain - Source Voltage

Cap

acita

nce

: C [p

F]


Fig.19 Coss Stored Energy

Cos

s St

ored

Ene

rgy

: EO

SS [u

J]


Fig.20 Switching Characteristics

Switc

hing

Tim

e : t

[ns]


Fig.21 Dynamic Input Characteristics

Gat

e - S

ourc

e Vo

ltage

: V G

S [V

]

Total Gate Charge : Qg [nC]


Data SheetR6015ANX

11/13 2012.02 - Rev.B


0.01

0.1

1

10

100

0 0.5 1 1.5

VGS = 0V Pulsed

Ta = 125ºC Ta = 75ºC Ta = 25ºC

Ta = −25ºC

Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage

Inve

rse

Dio

de F

orw

ard

Cur

rent

: I S

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current

Rev

erse

Rec

over

y Ti

me

: trr [n

s]

Inverse Diode Forward Current : IS [A]

10

100

1,000

0.1 1 10 100

Ta=25ºC di/dt=100A/µs VGS=0V Pulsed


Data SheetR6015ANX

12/13 2012.02 - Rev.B

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform


Data SheetR6015ANX

13/13 2012.02 - Rev.B

Dimensions (Unit : mm)

Dimension in mm/inches

D

b1

E1

E

e

b

c

F

A2

A1

AL

x A

A4

φp

Q

ATO-220FM

MIN MAX MIN MAXA 16.60 17.60 0.654 0.693A1 1.80 2.20 0.071 0.087A2 14.80 15.40 0.583 0.606A4 6.80 7.20 0.268 0.283b 0.70 0.85 0.028 0.033b1 1.10 1.50 0.043 0.059c 0.70 0.85 0.028 0.033D 9.90 10.30 0.39 0.406E 4.40 4.80 0.173 0.189eE1 2.70 3.00 0.106 0.118F 2.80 3.20 0.11 0.126L 11.50 12.50 0.453 0.492p 3.00 3.40 0.118 0.134Q 2.10 3.10 0.083 0.122x - 0.381 - 0.015

2.54 0.10

DIMMILIMETERS INCHES

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r6015anx : transistors

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