rf components enabling backhaul - microwave & rf · pdf filerf component technologies...
TRANSCRIPT
RF Component Technologies Enabling Affordable Wireless Backhaul
Gorden Cook, Director of Business Development RF Micro Devices
2
RF Micro Devices Overview
• >$1B RF Wireless Components Supplier • Cell phone • Base Station • Backhaul • 802.11, other wireless markets
• Scale Driven Cost • High volume, low cost capability
• High Frequency, High Power • Broad portfolio of products
• Internal Foundry Processes • GaAs, pHEMT, HBT • GaN
• Performance • Robust, reliable devices designed to deliver optimal performance
Backhaul Options – Macro, Micro
Cable/DSL
Fiber
WiFi
Wireless PtP/PMP Small Cell
Wireless Backhaul Challenges
CapEx & OpEx TCO costs
Business Model …to enable small cell rollout
Capacity Requirements Mbps, Gbps, …
Siting and Installation Antenna size, alignment, etc
Spectrum • NLoS <6GHz • 6-42GHz LoS • 60GHz V Band • E band
Mixed Topologies and Equipment • LOS • NLOS • Multiple bands • PtP, PMP
…component innovations to impact all areas
Two Key Ingredients to the Wireless Backhaul Solution
LoS NLoS
V Band 60GHz
E Band 71-76, 81-86GHz
~6-42GHz <6GHz
• Spectrum • RF Component Technologies • …
Rx In
Tx Out
Downconverter
Upconverter
Frac-N PLL
Tx In
Rx Out
TxVCO
PA
2nd IF Converter
Gain Block/DVGA
Gain Block/DVGA
RF Out
RF In
Freq
LO In
IFRxI
IFRxQ
LO In
IFTxI
IFTxQ
RxVCO
RF Component Technologies Enabling Backhaul
Core Semiconductor Components • Up Converter • Down Converter • VCOs • Driver, PA • 2nd IF Frequency Conversion • Digital Baseband
Competing Enabler Processes • GaAs • GaN • Silicon
Key Innovation Vectors • Cost • Integration • Linearity • Power Efficiency • PA output power • Multi-band Coverage
Rx In
Tx Out
Downconverter
Upconverter
Frac-N PLL
Tx In
Rx Out
TxVCO
PA
2nd IF Converter
Gain Block/DVGA
Gain Block/DVGA
RF Out
RF In
Freq
LO In
IFRxI
IFRxQ
LO In
IFTxI
IFTxQ
RxVCO
RF Component Innovations: Semiconductor Process
Rx In
Tx Out
Downconverter
Upconverter
Frac-N PLL
Tx In
Rx Out
TxVCO
PA
2nd IF Converter
Gain Block/DVGA
Gain Block/DVGA
RF Out
RF In
Freq
LO In
IFRxI
IFRxQ
LO In
IFTxI
IFTxQ
RxVCO
GaAs • Incumbent legacy process for
high frequency components • Moderate MMIC integration • Good power density, efficiency • High linearity, low noise
GaN • High power density process • Power Amp stage, >3W • High power density, efficiency • Good linearity, low noise
SiGe • Silicon, low price for high
volumes • Higher integration • Higher noise process, lower
output power
RF Component Future Innovations: End Benefits
Rx In
Tx Out
Downconverter
Upconverter
Frac-N PLL
Tx In
Rx Out
TxVCO
PA
2nd IF Converter
Gain Block/DVGA
Gain Block/DVGA
RF Out
RF In
Freq
LO In
IFRxI
IFRxQ
LO In
IFTxI
IFTxQ
RxVCO
Cost • Competing GaAs and SiGe solutions aggressively driving down component
pricing • Ex: VCO pricing over last 2 years: $18à$11à$8 future • Total RF BOM dropping 10%+ yr/yr • Industry-wide developments in mm wave will drive substantially lower cost
components in a few years. Output Power • Higher power components for traditional bands, enabling longer link lengths,
higher data rates • Higher power components to enable longer links, higher data rates,
antennas considerations Bandwidth, Integration, Linearity
• SiGe (silicon) trend towards integrated ‘system-on-chip’ parts • SiGe has unit price cost advantage, but higher development investment and market scale challenge • GaAs, GaN chips trending towards higher linearity, impacts to data rate, efficiency, … Power Consumption • GaN has lead on power efficiency, currently limited to lower frequencies <20GHz in volume • Higher linearity parts to enable more power efficient systems 5 Years Out, Key Expectations • >50% reduction in components pricing, particularly in mm wave • Increased integration in backhaul chipsets, but no all-in-one chip for all bands • Substantial Increase in cost effective chipset solutions in all bands, increased R&D focus on V, E band. • Increasing GaN portfolios at higher frequencies
Thank You