rf power field effect transistors - nxp.com · par = 9.8 lateral n-channeldb @ 0.01% probability on...

MRFE6S9201HR3 MRFE6S9201HSR3

1RF Device DataFreescale Semiconductor

RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications withfrequencies up to 1000 MHz. The high gain and broadband performance ofthese devices make them ideal for large -signal, common-source amplifierapplications in 28 volt base station equipment.

• Typical Single -Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS-95 CDMA (Pilot, Sync,Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz,PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain � 20.8 dBDrain Efficiency � 31.3%Device Output Signal PAR � 8.1 dB @ 0.01% Probability on CCDFACPR @ 750 kHz Offset � -46.5 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW(2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

Features• 100% PAR Tested for Guaranteed Output Power Capability• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation• Qualified Up to a Maximum of 32 VDD Operation• Integrated ESD Protection• RoHS Compliant• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS -0.5, +66 Vdc

Gate-Source Voltage VGS -6.0, +10 Vdc

Storage Temperature Range Tstg - 65 to +150 °C

Case Operating Temperature TC 150 °C

Operating Junction Temperature (1,2) TJ 225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit

Thermal Resistance, Junction to CaseCase Temperature 85°C, 197 W CWCase Temperature 75°C, 40 W CW

RθJC0.340.33

°C/W

1. Continuous use at maximum temperature will affect MTTF.2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRFE6S9201HRev. 1, 12/2008

Freescale SemiconductorTechnical Data

MRFE6S9201HR3MRFE6S9201HSR3

880 MHz, 40 W AVG., 28 VSINGLE N-CDMA

LATERAL N-CHANNELRF POWER MOSFETs

CASE 465A-06, STYLE 1NI-780S

MRFE6S9201HSR3

CASE 465-06, STYLE 1NI-780

MRFE6S9201HR3

© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.

2RF Device Data

Freescale Semiconductor


Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1B (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current(VDS = 66 Vdc, VGS = 0 Vdc)

IDSS � � 10 μAdc

Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS � � 1 μAdc

Gate-Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS � � 10 μAdc

On Characteristics

Gate Threshold Voltage(VDS = 10 Vdc, ID = 400 μAdc)

VGS(th) 1.5 2.2 3 Vdc

Gate Quiescent Voltage(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)

VGS(Q) 2.25 2.9 3.75 Vdc

Drain-Source On-Voltage(VGS = 10 Vdc, ID = 4.11 Adc)

VDS(on) 0.1 0.21 0.35 Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss � 2.3 � pF

Output Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss � 90 � pF

Input Capacitance(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss � 480 � pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg. N-CDMA, f = 880 MHz,Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain Gps 19.5 20.8 22.5 dB

Drain Efficiency ηD 29 31.3 � %

Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR 7.7 8.1 � dB

Adjacent Channel Power Ratio ACPR � -46.5 -45 dBc

Input Return Loss IRL � -16 -9 dB

1. Part is internally matched on input.

(continued)



Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865-900 MHz Bandwidth

Video Bandwidth @ 200 W PEP Pout where IM3 = -30 dBc(Tone Spacing from 100 kHz to VBW)ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (bothsidebands)

VBW� 10 �

MHz

Gain Flatness in 35 MHz Bandwidth @ Pout = 40 W Avg. GF � 0.19 � dB

Average Deviation from Linear Phase in 35 MHz Bandwidth @ Pout = 200 W CW

Φ � 0.461 � °

Average Group Delay @ Pout = 200 W CW, f = 880 MHz Delay � 11.66 � ns

Part - to-Part Insertion Phase Variation @ Pout = 200 W CW, f = 880 MHz, Six Sigma Window

ΔΦ � 14.97 � °

Gain Variation over Temperature(-30°C to +85°C)

ΔG � 0.011 � dB/°C

Output Power Variation over Temperature(-30°C to +85°C)

ΔP1dB � 0.39 � dBm/°C

4RF Device Data



Figure 1. MRFE6S9201HR3(HSR3) Test Circuit Schematic

Z1 0.227″ x 0.065� MicrostripZ2 0.938″ x 0.065� MicrostripZ3 0.492″ x 0.065� MicrostripZ4 0.046″ x 0.300″ MicrostripZ5 0.094″ x 0.300″ MicrostripZ6 0.141″ x 0.546″ x 0.300″ TaperZ7 0.076″ x 0.734″ x 0.546″ TaperZ8 0.023″ x 0.780″ x 0.734″ TaperZ9 0.170″ x 0.780″ Microstrip

Z1

RF

INPUT

C1

C43

Z2 Z3 Z4 Z5 Z7

Z12

C9

C8

C11 C38

C39

RF

OUTPUT

Z6

Z13 Z17 Z18 Z19 Z20 Z25

C4

B1

VBIAS

C20 C29 C31 C42 C26

VSUPPLY++

Z9

R4C2

R2

C14 C17

C10 C13 C16

C19

C18

C24

C22

Z21 Z22 Z23 Z24

Z10

+

Z11

R1

C6 C7

Z8

B2

R3C3

+

C5

DUT

Z26

C32C25C23

C21

C15

C12

Z16

C41

C40

Z15Z14

C30 C28 C27

C44 C46 C37 C33 C45

++

C36 C35 C34

Z10, Z11 0.853″ x 0.100″ MicrostripZ12 0.084″ x 0.780″ MicrostripZ13 0.086″ x 0.780″ MicrostripZ14 0.035″ x 0.780″ x 0.709″ TaperZ15 0.093″ x 0.709″ x 0.499″ TaperZ16 0.131″ x 0.499″ x 0.286″ TaperZ17 0.047″ x 0.365″ MicrostripZ18 0.054″ x 0.365″ Microstrip

Z19 0.020″ x 0.365″ MicrostripZ20 0.097″ x 0.065″ MicrostripZ21, Z22 0.050″ x 0.065″ MicrostripZ23 0.305″ x 0.065″ MicrostripZ24 0.456″ x 0.065″ MicrostripZ25 0.357″ x 0.065″ MicrostripZ26 0.340″ x 0.065″ MicrostripPCB Taconic RF-35, 0.030″, εr = 3.5



Table 5. MRFE6S9201HR3(HSR3) Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer

B1, B2 Short RF Beads 2743019447ROP50 Fair -Rite

C1, C4, C5, C20, C39, C44 33 pF Chip Capacitors ATC100B330JT500XT ATC

C2, C3 10 μF, 50 V Tantalum Capacitors T491C106K050AT Kemet

C6, C32, C38, C43 0.6-4.5 pF Variable Capacitors, Gigatrim 27271SL Johanson

C7, C12, C13, C14, C15, C16,C17, C25

3.3 pF Chip Capacitors ATC600F3R3BT250XT ATC

C8, C9 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC

C10, C11 15 pF Chip Capacitors ATC100B6R8JT500XT ATC

C18, C19, C21, C22, C23, C24 1.0 pF Chip Capacitors ATC600F1R0BT250XT ATC

C26, C45 470 μF, 63 V Electrolytic Capacitors EKMG630ELL331MJ20S United Chemi-Con

C27, C34 1.2K pF Chip Capacitors ATC100B1R2BT500XT ATC

C28, C35 20K pF Chip Capacitors ATC200B203MT50XT ATC

C29, C31, C37, C46 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

C30, C36 0.047 pF, 50 V Chip Capacitors C1825C473J5RAC Kemet

C33, C42 22 μF, 50 V Tantalum Capacitors T491C226K050AT Kemet

C40, C41 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC

R1, R2 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay

R3, R4 1 KΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay

Figure 2. MRFE6S9201HR3(HSR3) Test Circuit Component Layout

CU

T O

UT

AR

EA

MRFE6S9201H/HSRev. 0

B1

R4

C2

C1

C4 R1

C7

C6

C9R2

C8

C43C5

C3

R3B2

C45

C34 C35 C36

C37

C46

C33C44C11

C38C32

C39

C27

C28 C30C31

C26

C42

C29

C20

C10

C40

C41

C12

C15

C13

C14

C16

C17

C18

C19

C21C23

C22

C24

C25

6RF Device Data



TYPICAL CHARACTERISTICS

Gps

, PO

WE

R G

AIN

(dB

)

IRL,

IN

PU

T R

ET

UR

N L

OS

S (

dB)

AC

PR

(dB

c), A

LT1

(dB

c)

−25

0

−5

−10

−15

960800

IRL

Gps

ACPR

f, FREQUENCY (MHz)

Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 40 Watts Avg.

940920900880860840820

12

22

21

20

19

18

17

16

−65

40

35

30

25

−40

−45

−50

−55

η D,

DR

AIN

EF

FIC

IEN

CY

(%

)

ηD

VDD = 28 Vdc, Pout = 40 W (Avg.)IDQ = 1400 mA, N−CDMA IS−95 PilotSync, Paging, Traffic Codes 8 Through 13

15

14

13

20

−60 −20ALT1

Gps

, PO

WE

R G

AIN

(dB

)

IRL,

IN

PU

T R

ET

UR

N L

OS

S (

dB)

AC

PR

(dB

c), A

LT1

(dB

c)

−25

0

−5

−10

−15

960800

IRL

Gps

ACPR

f, FREQUENCY (MHz)

Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 84 Watts Avg.

940920900880860840820

12

22

21

20

19

18

17

16

50

30

20

−30

−40

−45

−50

−55η D

, D

RA

IN

EF

FIC

IEN

CY

(%

)ηD

15

14

13

−35

−60

−20ALT1

Figure 5. Two-Tone Power Gain versusOutput Power

100

23

1

IDQ = 2100 mA

Pout, OUTPUT POWER (WATTS) PEP

700 mA

1050 mA

22

21

20

10 400

Gps

, PO

WE

R G

AIN

(dB

)

19

18

Figure 6. Third Order Intermodulation Distortionversus Output Power

−10

1

IDQ = 700 mA


1050 mA

100

−20

−30

−40

400−70

−50

10

INT

ER

MO

DU

LAT

ION

DIS

TO

RT

ION

(dB

c)

IMD

, T

HIR

D O

RD

ER

VDD = 28 Vdc, Pout = 84 W (Avg.)IDQ = 1400 mA, N−CDMA IS−95 PilotSync, Paging, Traffic Codes 8 Through 13

1400 mA

1750 mA

VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two−Tone Measurements

−60

VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz


1750 mA1400 mA

2100 mA

40




Figure 7. Intermodulation Distortion Productsversus Output Power


IMD

, IN

TE

RM

OD

ULA

TIO

N D

IST

OR

TIO

N (

dBc)

0

1 100

−40

10

−20

−60

7th Order

VDD = 28 Vdc, IDQ = 1400 mA

f1 = 880 MHz, f2 = 880.1 MHz


5th Order

3rd Order

400

Figure 8. Intermodulation Distortion Productsversus Tone Spacing

TWO−TONE SPACING (MHz)

10

−60

IM3−U

−20

−40

1 100

IMD

, IN

TE

RM

OD

ULA

TIO

N D

IST

OR

TIO

N (

dBc)

−50

−30IM3−L

IM5−U

IM5−L

IM7−L

−10

Figure 9. Pulsed CW Output Power versusInput Power

63

Pin, INPUT POWER (dBm)

Actual

Ideal62

Pou

t, O

UT

PU

T P

OW

ER

(dB

m)

29

P6dB = 54.86 dBm (306.2 W)

VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1400 mA


(f1 + f2)/2 = Center Frequency of 880 MHz

−80

−100

IM7−U

61

60

59

58

57

56

55

54

53

52

5130 31 32 33 34 35 36 37 38 39 40

VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW

12 μsec(on), 1% Duty Cycle, f = 880 MHz

P3dB = 54.18 dBm (261.82 W)

P1dB = 53.21 dBm

(209.41 W)

Figure 10. Single-Carrier N-CDMA ACPR, ALT1, PowerGain and Drain Efficiency versus Output Power

0 −90

Pout, OUTPUT POWER (WATTS) AVG.

70 −20

40

−40

30

−50

20

−60

10

10

−70

ηD

Gps TC = −30�C

ACPR

η D, D

RA

IN E

FF

ICIE

NC

Y (

%),

Gps

, PO

WE

R G

AIN

(dB

)

VDD = 28 Vdc, IDQ = 1400 mA

f = 880 MHz, N−CDMA IS−95 (Pilot

Sync, Paging, Traffic Codes 8

Through 13)

ALT

1, C

HA

NN

EL

PO

WE

R (

dBc)

AC

PR

, A

DJA

CE

NT

CH

AN

NE

L P

OW

ER

RA

TIO

(dB

c)

1 100 300

25�C

85�C

−30�C

25�C

85�C

50

60

−80

−30

25�C85�C

ALT1

8RF Device Data




400

16 0

70

Pout, OUTPUT POWER (WATTS) CW

Figure 11. Power Gain and Drain Efficiencyversus CW Output Power

VDD = 28 Vdc

IDQ = 1400 mA

f = 880 MHz

TC = −30�C25�C

85�C

10

23

22

21

20

19

50

40

30

20

10

η D, D

RA

IN E

FF

ICIE

NC

Y (

%)

Gps

ηD

Gps

, PO

WE

R G

AIN

(dB

)

100

−30�C

25�C85�C

18

17

1

60

Figure 12. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) CW

VDD = 24 V

Gps

, PO

WE

R G

AIN

(dB

)

35018

22

0

19

20

21

IDQ = 1400 mA

f = 880 MHz

50 100 200

28 V 32 V

150 250 300

250

108

90

TJ, JUNCTION TEMPERATURE (°C)

Figure 13. MTTF versus Junction Temperature

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 31.3%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

107

106

105

110 130 150 170 190

MT

TF

(H

OU

RS

)

210 230



N-CDMA TEST SIGNAL

10

0.0001

100

0

PEAK−TO−AVERAGE (dB)

Figure 14. Single-Carrier CCDF N-CDMA

10

1

0.1

0.01

0.001

2 4 6 8

IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth

Carriers. ACPR Measured in 30 kHz Bandwidth @

±750 kHz Offset. ALT1 Measured in 30 kHz

Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

PR

OB

AB

ILIT

Y (

%)

.................

... ....... ......... ...... .................................

.

.......

...

......... ..... .............. ..... ... ... ..... . .... ..... .. ...

.

............ ..........................................

............... ........... ....... .........................

....... .... ......... ........... ... ... ... .......................

....................... .... .. .................... ..... .... ................... . ... ..... .... .... .. ....... ......... .. ... ... .. . ....... ... .......... .... .. ..

... .................. .. ... .

.............. .... ................................................................................. ... .... .....

... .............. ... ... ... ...................... .. ..... ........................ ....... .............. .

.............................. ...........................................................

.... ....... ............................ ....... ......................... ......... ................... .... .........

.....

......

....

..

..

..

....

....

..... ... ... .............. ...... ... ... .... .. ... .......... .. .... ... ................ ...... .....

.........................

..

..............

.

............

.

. ................. ..... . ...

........

...................................................

...

−60

−110

−10

(dB

)

−20

−30

−40

−50

−70

−80

−90

−100

+ACPR in 30 kHzIntegrated BW

1.2288 MHzChannel BW

2.90.7 2.21.50−0.7−1.5−2.2−2.9−3.6 3.6

f, FREQUENCY (MHz)

Figure 15. Single-Carrier N-CDMA Spectrum

−ACPR in 30 kHzIntegrated BW

−ALT1 in 30 kHzIntegrated BW

+ALT1 in 30 kHzIntegrated BW

10RF Device Data



Zload

Zsource

Zo = 5 Ω

f = 980 MHz

f = 820 MHz

f = 820 MHz

f = 980 MHz

VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg.

fMHz

Zsource�

Zload�

820 3.28 - j3.94 0.78 + j0.24

840 3.12 - j3.93 0.81 + j0.36

860 2.85 - j3.73 0.83 + j0.51

880 2.58 - j3.39 0.82 + j0.70

900 2.44 - j2.98 0.83 + j0.98

920 2.43 - j2.87 1.02 + j1.60

940 2.31 - j2.66 4.12 + j1.11

960 2.17 - j2.54 1.49 - j0.66

980 1.91 - j2.39 0.90 - j0.26

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Figure 16. Series Equivalent Source and Load Impedance

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network



PACKAGE DIMENSIONS

CASE 465-06ISSUE GNI-780

MRFE6S9201HR3

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DELETED4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.335 1.345 33.91 34.16

B 0.380 0.390 9.65 9.91

C 0.125 0.170 3.18 4.32

D 0.495 0.505 12.57 12.83

E 0.035 0.045 0.89 1.14

F 0.003 0.006 0.08 0.15

G 1.100 BSC 27.94 BSC

H 0.057 0.067 1.45 1.70

K 0.170 0.210 4.32 5.33

N 0.772 0.788 19.60 20.00

Q .118 .138 3.00 3.51

R 0.365 0.375 9.27 9.53

STYLE 1:PIN 1. DRAIN

2. GATE 3. SOURCE

1

3

2

D

G

K

C

E

H

S

FS 0.365 0.375 9.27 9.52

M 0.774 0.786 19.66 19.96

aaa 0.005 REF 0.127 REF

bbb 0.010 REF 0.254 REF

ccc 0.015 REF 0.381 REF

Q2X

MAMbbb B MT

MAMbbb B MT

B

B(FLANGE)

SEATINGPLANE

MAMccc B MT

MAMbbb B MT

A A(FLANGE)

T

N (LID)

M (INSULATOR)

MAMaaa B MT

(INSULATOR)

R

MAMccc B MT

(LID)

CASE 465A-06ISSUE HNI-780S

MRFE6S9201HSR3

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DELETED4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.805 0.815 20.45 20.70

B 0.380 0.390 9.65 9.91

C 0.125 0.170 3.18 4.32

D 0.495 0.505 12.57 12.83

E 0.035 0.045 0.89 1.14

F 0.003 0.006 0.08 0.15

H 0.057 0.067 1.45 1.70

K 0.170 0.210 4.32 5.33

M 0.774 0.786 19.61 20.02

R 0.365 0.375 9.27 9.53

STYLE 1:PIN 1. DRAIN

2. GATE5. SOURCE

1

2

D

K

C

E

H

F3

U(FLANGE)

4X

Z(LID)

4X

bbb 0.010 REF 0.254 REF

ccc 0.015 REF 0.381 REF

aaa 0.005 REF 0.127 REF

S 0.365 0.375 9.27 9.52

N 0.772 0.788 19.61 20.02

U −−− 0.040 −−− 1.02

Z −−− 0.030 −−− 0.76

MAMbbb B MT

B

B(FLANGE)

2X

SEATING

PLANE

MAMccc B MT

MAMbbb B MT

A A(FLANGE)

T

N (LID)

M (INSULATOR)

MAMccc B MT

MAMaaa B MT

R (LID)

S (INSULATOR)

12RF Device Data



PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Sept. 2007 • Initial Release of Data Sheet

1 Dec. 2008 • Updated Typical Performance Full Frequency Band to f = 880 MHz to match production test, p. 1

• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant partnumbers, p. 5



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Document Number: MRFE6S9201HRev. 1, 12/2008

rf power field effect transistors - nxp.com · par = 9.8 lateral n-channeldb @ 0.01% probability on...

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