san jose january 23-24, 2001 taipei february 14-15, 2001 ddr penetrates mobile computing bill...

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San Jose San Jose January 23-24, 2001 January 23-24, 2001 Taipei Taipei February February 14-15, 2001 14-15, 2001 DDR Penetrates DDR Penetrates Mobile Computing Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics Committee

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Page 1: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

San JoseSan Jose January 23-24, 2001 January 23-24, 2001 TaipeiTaipei February 14-15, 2001 February 14-15, 2001

DDR PenetratesDDR PenetratesMobile ComputingMobile Computing

Bill Gervasi

Technology Analyst

Chairman, JEDEC Memory

Parametrics Committee

Page 2: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

AgendaAgenda

• Why DDR for Mobile?

• Standard versus cached DRAMs

• DDR Configurations

• Introducing the DDR MicroDIMM

• Mobile System Design Guidelines

Page 3: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Reasons for DDR in MobileReasons for DDR in Mobile

• Performance

• Power

• Form factors

Page 4: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

SDRAM EvolutionSDRAM Evolution

1000MB/s

2700MB/sMainstreamMemories

SDR

DDR333

Simple,incrementalsteps

DDR II4800MB/s

2100MB/s

DDR266

Page 5: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Power: DDR vs SDRPower: DDR vs SDR

0

0.5

1

1.5

2

2.5

3

3.5

Throughput per Second per Unit Power

PC-100

1X

DDR-266

3.2X

PC-133

0.8X

DDR-333

2.6X est.

Page 6: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

DDR Power ManagementDDR Power Management  Relative

PowerCPU ClockLatency**

Active on 100% 0 x 5 = 0

Inactive on   3 x 5 = 15

Active off   1 x 5 = 5

Inactive off 0.2% 4 x 5 = 20

Sleep  0.4% 200 x 5=1000

PowerState*

12%

4%

* Not industry standard terms – simplified for brevity** Assuming memory clock frequency = 1/5 CPU frequency

Op

enP

age

Clo

sed

Pag

e

Page 7: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Implications: Mobile PowerImplications: Mobile Power

• Encourages closed page policy– Precharge banks as soon as data read– Takes latency hit to reactivate

Page 8: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Closed Page Power ProfileClosed Page Power Profile

NOP ACT R R PRE NOP

NOP ACT W W PRE NOP

Command Activity

Power Profile

Power Profile

Command ActivityLower Power

Higher Power

Page 9: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Cached DRAM Power ProfileCached DRAM Power Profile

NOP ACT R-PRE R R NOP

NOP ACT W W PRE NOP

Lower Power

Higher Power

Command Activity

Power Profile

Power Profile

Command Activity

Depending on cached DRAM architecture

Page 10: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Standard vs CachedStandard vs Cached

• Cached DRAM architectures save power– Improved closed page performance– Latency reduction on page hits– Lower power profile

(See my other presentation at Platform 2001… “An Analysis of Virtual Channel and Enhanced Memories Technologies”)

Page 11: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

DDR ConfigurationsDDR Configurations

TSOP-II

SO-DIMM

DIMM

TQFP

NEW!MicroDIMM

NEW!FBGA

Page 12: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Next: Small PackagesNext: Small PackagesFBGA (fine pitch BGA)

•Lower inductance•Lower capacitance•Smaller footprint•Tighter layouts enabled

Details:

Package size = 104 mm2 = 54% smaller

Inductance: 1.7nH lower

Inductance variation, pin to pin: 3X less

Capacitance: 0.5pF lower

Performance gain: 300ps of data valid time

Page 13: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

DDR Chip ConfigurationsDDR Chip Configurations• TQFP devices for point to point

– x32 … 64Mb, 128Mb coming– 100 pins, 16 x 22 mm footprint

• TSOP devices– x4, x8, x16 … 64Mb, 128Mb, 256Mb– 66 pins, 12 x 22 mm footprint

• FBGA selection in process– x4, x8, x16 … 128Mb, 256Mb, 512Mb/1Gb coming– 60 ball, 6.4 x 11 mm minimum footprint

Page 14: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

DDR Module ConfigurationsDDR Module Configurations• DDR SO-DIMM – done!

– Sockets, modules in production

• DDR MicroDIMM – in process– Task group active

• System application combinations– One module only– Soldered down + module– Two modules

Page 15: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Next: DDR MicroDIMMNext: DDR MicroDIMM

• Half the size of the DDR SO-DIMM• Half the capacity if using TSOP

– or –• Same capacity if using FBGA• Target markets:

– PDAs– Internet appliances– Subnotebook computers

Page 16: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

SO- and Micro- DIMMsSO- and Micro- DIMMs

DDR SO-DIMM

TSOP:67.6 x 31.75 mm = 2146 mm2

4 or 8 devices

200 pins on 0.6 mm pin pitch(supports ECC)

---------------------

FBGA:Under consideration if needed

DDR MicroDIMM

TSOP:45.5 x 30 mm = 1365 mm2

4 devices

172 pins on 0.5 mm pin pitch(no ECC)

---------------------

FBGA:45.5 x 25 mm = 1137 mm2

4 or 8 devices

Page 17: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Module StatusModule Status

• DDR SO-DIMM– DDR266 validated– DDR333 under analysis– Looking okay to 333 MHz with TSOP

• DDR MicroDIMM– TSOP easy, DDR266/333 speeds– FBGA package needed to fit 8 chips– Possible schedule

• Sample April 2001• Approved spec June 2001

Page 18: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Module DensitiesModule Densities

SO-DIMM MicroDIMM

RawCard

64(Mb)

128(Mb)

256(Mb)

RawCard

64(Mb)

128 (Mb)

256 (Mb)

A: 8 TSOPs(MB) 64 128 256 A: 4 TSOPs

(MB) 32 64 128

B: 8 TSOPs(MB) 64 128 256 B: 4 FBGAs

(MB) 32 64 128

C: 4-5 TSOPs(MB) 32 64 128 C: 8 FBGAs

(MB) 64 128 256

Page 19: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Small System ConfigurationsSmall System Configurations

• One data bus, one address bus

• Point to point, single socket– Series damped data, address, clock

• Two sockets– SSTL_2 terminated data– Series damped address, clock– Top/bottom or butterfly arrangement

Page 20: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Top/Bottom Mobile ModulesTop/Bottom Mobile Modules

• Standard for many current full size notebooks• Hard to get at one of the modules• Thickest form factor

CPU

Socket Module

CPUModule SOCKET

Motherboard

Note: There may be patents regarding use of these layouts

Page 21: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Butterfly Mobile ModulesButterfly Mobile Modules

• Perfect for thin/light notebooks & subnotes• Single access door to both modules• Also good for small form factor desktop PCs

CPU

Module Socket

CPUModule SOCKET

Motherboard

-- or --

Note: There may be patents regarding use of these layouts

Page 22: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

MicroDIMM DesignsMicroDIMM Designs

You know the DDR SO-DIMM, so…

…let’s focus on the MicroDIMM design

First, system configurations…

Page 23: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Clock TopologyClock Topology

RAM

RAM

RAM

RAM

CK

CK

25

25

Conn

Page 24: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Data Topology, 1 SlotData Topology, 1 Slot

RAM

RAM

DQ, DQS, DM

25Conn

22

2 bank

Page 25: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Data Topology, 2 SlotData Topology, 2 SlotRAM

RAM

DQ, DQS, DM

25Conn

22

Conn

RAM

RAM22

25 VTT

2 bank

2 bank

Page 26: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

A/C Topology, 1 SlotA/C Topology, 1 SlotRAM

A, BA, WE,

RAS, CAS

10Conn

RAM

RAM

RAM

RAM

RAM

RAM

RAM

Two Bank

MicroDIMM

shown

Page 27: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

A/C Topology, 1 SlotA/C Topology, 1 Slot

10Conn

RAM RAM RAM RAM

11pF

One Bank

MicroDIMM

shown

A, BA, WE,

RAS, CAS

Page 28: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

A/C Topology, 2 SlotA/C Topology, 2 Slot

10Conn

Conn

RAM RAM RAM RAM

11pF

Two Bank

MicroDIMM

shown

One Bank

MicroDIMM

shown

A, BA, WE,

RAS, CAS

RAM

RAM

RAM

RAM

RAM

RAM

RAM

RAM

Page 29: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

CS & CKE TopologyCS & CKE Topology

CS, CKE

10Conn

RAM RAM RAM RAM

One or Two Bank

MicroDIMM

shown

11pF

Page 30: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Increasing Focus on SystemsIncreasing Focus on Systems

• JEDEC packaging committee charter extended to include module sockets– Land pattern for pin pads– Mechanical support tab locations– Orientation holes– Shadow area of socket body– Module height & centerline

• Working system configuration first time!

Page 31: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics
Page 32: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics
Page 33: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

DDR MicroDIMM ClearancesDDR MicroDIMM Clearances

Standard socket, double sided memory module

Reverse socket, double sided memory module

Reverse socket, single sided memory module

Standard socket, single sided memory module

4.43mm max

0.65mm min

3.78mm max

5.40mm max

3.78mm max

discretes

Page 34: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Socket Spec StatusSocket Spec Status

• Merging 144, 172 pin sockets into single parameterized MO-214 spec– Priming spring included

• Shoves module “to the left”

– Redimensioned by left edge, not center– Edge bevel defined

Page 35: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

ConclusionsConclusions

• DDR solutions for mobile growing

• Cached DRAM would be even better

• Point to point and DDR SO-DIMM done

• DDR333 development in progress

• FBGA packaged DDR coming

• DDR MicroDIMM development on track

Page 36: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Memory of choice for the future

Page 37: San Jose January 23-24, 2001 Taipei February 14-15, 2001 DDR Penetrates Mobile Computing Bill Gervasi Technology Analyst Chairman, JEDEC Memory Parametrics

Thank YouThank You