sct2h12ny : sic power devicesdatasheet sct2h12ny n-channel sic power mosfet outline vdss 1700v...
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DatasheetSCT2H12NY N-channel SiC power MOSFET
Outline
VDSS 1700V TO-268-2L
RDS(on) (Typ.) 1.15ID 4A
PD 44W
Features Inner circuit
1) Low on-resistance
2) Fast switching speed
3) Long creepage distance with no center lead
4) Simple to drive
5) Pb-free lead plating ; RoHS compliant
Packaging specifications
Type
Packing Embossed tape
Application Reel size (mm) 330
・Auxilialy power supplies Tape width (mm) 24
・Switch mode power supplies Basic ordering unit (pcs) 400
Unit
Taping code TB
Marking SCT2H12NY
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Value
Drain - Source voltage VDSS 1700 V
Continuous drain currentTc = 25°C ID
*1 4 A
Tc = 100°C ID *1 2.9 A
Pulsed drain current ID,pulse *2 10 A
Gate - Source voltage (DC) VGSS 6 to 22 V
Range of storage temperature Tstg 55 to 175 °C
Junction temperature Tj 175 °C
Power dissipation (Tc = 25°C) PD 44 W
Gate - Source surge voltage (tsurge<300nsec) VGSS_surge *3 10 to 26 V
(1) Gate(2) Drain(3) Source
*1 Body Diode
(1)
(3)
(2)
*1
(2)
(1) (3)
1/12 2017.07 - Rev.Bwww.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.
DatasheetSCT2H12NY
*1 Limited only by maximum temperature allowed.*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
Thermal resistance
Parameter SymbolValues
UnitMin. Typ. Max.
UnitMin. Typ. Max.
Thermal resistance, junction - case RthJC - 2.65 3.45 °C/W
Electrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
V
Zero gate voltagedrain current
IDSS
VDS = 1700V, VGS = 0V
ATj = 25°C -
Drain - Source breakdownvoltage
V(BR)DSS VGS = 0V, ID = 1mA 1700 - -
0.1 10
Tj = 150°C - 0.2 -
Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA
nA
Gate threshold voltage VGS (th) VDS = VGS, ID = 0.41mA 1.6 2.8 4.0 V
Gate - Source leakage current IGSS VGS = 6V, VDS = 0V - - 100
2/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
Tj = 25°C - 1.15 1.5
Tj = 125°C - 1.71 -
UnitMin. Typ. Max.
Static drain - sourceon - state resistance
RDS(on) *4
VGS = 18V, ID = 1.1A
Transconductance gfs *4 VDS = 10V, ID = 1.1A - 0.4 - S
Gate input resistance RG f = 1MHz, open drain - 64 -
pFOutput capacitance Coss VDS = 800V - 16 -
Reverse transfer capacitance Crss f = 1MHz
Input capacitance Ciss VGS = 0V - 184 -
- 6 -
Effective output capacitance,energy related
Co(er)VGS = 0VVDS = 0V to 800V
- 17 - pF
Turn - on delay time td(on) *4 VDD = 500V, ID = 1.1A - 16 -
nsRise time tr
*4
Fall time tf *4 RG = 0 - 74 -
VGS = 18V/0V - 21 -
Turn - off delay time td(off) *4 RL = 455 - 35 -
µJ
Turn - off switching loss Eoff *4 - 32 -
Turn - on switching loss Eon *4 VDD = 800V, ID=1.1A
VGS = 18V/0V
RG = 0, L=2mH*Eon includes diode reverse recovery
- 57 -
- 14 -
Gate Charge characteristics (Ta = 25C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
V
- 5 -
Gate plateau voltage V(plateau) VDD = 500V, ID = 1A - 10.5 -
nCGate - Source charge Qgs *4 ID = 1A - 4 -
Gate - Drain charge Qgd *4 VGS = 18V
Total gate charge Qg *4 VDD = 500V
3/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
A
Inverse diode direct current,pulsed
ISM *2 - - 10 A
Inverse diode continuous,forward current
IS *1
Tc = 25°C
- - 4
V
Reverse recovery time trr *4
IF = 1.1A, VR = 800V
di/dt = 300A/s
- 21 - ns
Reverse recovery charge Qrr *4
Forward voltage VSD *4 VGS = 0V, IS = 1.1A - 4.3 -
- 13 - nC
Peak reverse recovery current Irrm *4 - 1.1 - A
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Ws/KRth2 1601m Cth2 1.42m
Rth3 556m Cth3 65.6m
Rth1 493m
K/W
Cth1 378µ
4/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Pow
er D
issi
patio
n :
PD
[W]
Dra
in C
urre
nt :
ID
[A]
Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal Resistance vs. Pulse Width
Tra
nsie
nt T
herm
al R
esis
tanc
e : R
th[K
/W]
Pulse Width : PW [s]
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200
0.1
1
10
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Ta = 25ºCSingle Pulse
0.01
0.1
1
10
100
0.1 1 10 100 1000 10000
Ta = 25ºCSingle Pulse
PW = 100s
PW = 1ms
PW = 10ms
PW = 100ms
Operation in this areais limited by RDS(on)
5/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
Fig.6 Tj = 150°C Typical Output
Characteristics(I)Fig.7 Tj = 150°C Typical Output
Characteristics(II)
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
ID
[A]
Dra
in C
urre
nt :
ID
[A]
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
ID
[A]
Drain - Source Voltage : VDS [V]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0 1 2 3 4 5
Ta = 25ºCPulsed
VGS= 8V
VGS= 14V
VGS= 16V
VGS= 18V
VGS= 20V
VGS= 12V
VGS= 10V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0 1 2 3 4 5
Ta = 150ºCPulsed
VGS= 8V
VGS= 18V
VGS= 16VVGS= 14V
VGS= 12V
VGS= 20V
VGS= 10V
0
0.5
1
1.5
2
2.5
3
3.5
0 2 4 6 8 10
Ta = 25ºCPulsed
VGS= 8V
VGS= 10V
VGS= 14V
VGS= 16VVGS= 20V
VGS= 12V
VGS= 18V
0
0.5
1
1.5
2
2.5
3
3.5
0 2 4 6 8 10
Ta = 150ºCPulsed
VGS = 10V
VGS= 8V
VGS= 18V
VGS= 16V
VGS= 20V
VGS= 14V
VGS= 12V
6/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)
Dra
in C
urre
nt :
ID
[A]
Dra
in C
urre
nt :
ID
[A]
Fig.10 Gate Threshold Voltagevs. Junction Temperature
Gat
e T
hres
hold
Vol
tage
: V
GS
(th)
[V]
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
Tra
nsco
nduc
tanc
e : g
fs[S
]
Drain Current : ID [A]
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]
0.01
0.1
1
0.01 0.1 1 10
VDS = 10VPulsed
Ta= 175ºCTa= 125ºCTa= 75ºCTa= 25ºCTa= 25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50 0 50 100 150 200
VDS = 10VID = 0.41mA
0.01
0.1
1
10
0 2 4 6 8 10 12 14 16 18 20
VDS = 10VPulsed
Ta= 175ºCTa= 125ºCTa= 75ºCTa= 25ºCTa= 25ºC
0
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10 12 14 16 18 20
VDS = 10VPulsed
Ta= 175ºCTa= 125ºCTa= 75ºCTa= 25ºCTa= 25ºC
7/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - StateResistance vs. Drain Current
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Res
ista
nce
: RD
S(o
n)[
]
Drain Current : ID [A]
0
0.5
1
1.5
2
2.5
3
8 10 12 14 16 18 20 22
ID = 1.1A
ID = 2.2A
Ta = 25ºCPulsed
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150 200
VGS = 18VPulsed
ID = 2.2A
ID = 1.1A
0.1
1
10
0.1 1 10
VGS = 18VPulsed
Ta = 175ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = 25ºC
8/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.15 Typical Capacitancevs. Drain - Source Voltage
Cap
acita
nce
: C
[pF
]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Sw
itchi
ng T
ime
: t [
ns]
Drain Current : ID [A]
Fig.18 Dynamic Input Characteristics
Total Gate Charge : Qg [nC]
Gat
e -
Sou
rce
Vol
tage
: V
GS
[V]
Cos
s S
tore
d E
nerg
y : E
OS
S[
J]
Fig.16 Coss Stored Energy
Drain - Source Voltage : VDS [V]
0
1
2
3
4
5
6
7
0 200 400 600 800 1000
Ta = 25ºC
1
10
100
1000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºCf = 1MHzVGS = 0V
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16
Ta = 25ºCVDD = 500VID = 1APulsed
10
100
1000
0.1 1 10
tf
td(on)
td(off)
Ta = 25ºCVDD = 500VVGS = 18VRG = 0Pulsed
tr
9/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.19 Typical Switching Lossvs. Drain - Source Voltage
Sw
itchi
ng E
nerg
y : E
[J
]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Lossvs. External Gate Resistance
Sw
itchi
ng E
nerg
y : E
[J
]
External Gate Resistance : RG []
Sw
itchi
ng E
nerg
y : E
[J
]
Fig.20 Typical Switching Lossvs. Drain Current
Drain Current : ID [A]
0
50
100
150
200
250
0 1 2 3 4 5
Ta = 25ºCVDD=800VVGS = 18V/0VRG=0L=2mH
Eon
Eoff
0
10
20
30
40
50
60
70
80
90
100
500 600 700 800 900 1000 1100
Ta = 25ºCID=1.1AVGS = 18V/0VRG=0L=2mH
Eon
Eoff
0
20
40
60
80
100
120
140
0 20 40 60 80 100
Ta = 25ºCVDD=800VID=1.1AVGS = 18V/0VL=2mH
Eon
Eoff
10/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Electrical characteristic curves
Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage
Inve
rse
Dio
de
For
war
d C
urre
nt :
IS
[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current
Rev
erse
Rec
over
y T
ime
: trr
[ns]
Inverse Diode Forward Current : IS [A]
0.01
0.1
1
10
0 1 2 3 4 5 6 7 8
VGS = 0VPulsed
Ta = 175ºCTa = 125ºCTa = 75ºCTa = 25ºCTa = 25ºC
10
100
1000
1 10
Ta = 25ºCdi / dt = 300A / sVR = 800VVGS = 0VPulsed
11/12 2017.07 - Rev.B
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DatasheetSCT2H12NY
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
90%
90% 90%
10% 10%
50%10%50%
VGS
Pulse width
VDS
ton toff
trtd(on) tftd(off)
VGS
RG
VDS
D.U.T.
ID
RL
VDD
VGS
IG(Const.)
VDS
D.U.T.
ID
RL
VDD
VG
VGS
Charge
Qg
Qgs Qgd
VsurgeIrr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
DRIVER MOSFET
RG
D.U.T. LIF
VDD
Same type device as D.U.T.
D.U.T.
ID
trr
Irr 100%
Irr
IF
0
Irr 90%
drr / dt
Irr 10%DRIVER MOSFET
RG
D.U.T. LIF
VDD
D.U.T.
12/12 2017.07 - Rev.B
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