second generation egan® fets are lead free

EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 1

APPLICATION NOTE: AN013 Second Generation eGaN® FETs

Second Generation eGaN® FETs are Lead Free and Offer Improved Performance

Since March, 2011 Efficient Power Conversion Corporation (EPC) has launched a family

of second generation enhancement mode gallium nitride (eGaN) FETs. All of these new

products are lead free, halogen free, RoHS compliant, and have significant improve-

ments in their overall performance. These lead free products join the family of eGaN

FETs introduced in March, 2010.

EFFICIENT POWER CONVERSION

Alex Lidow, CEO, Efficient Power Conversion Corporation

Table 1 shows a comparison of key characteristics between the first generation and second genera-tion 40 V, 100V and 200 V eGaN FETs [1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12].

In addition to the improvements shown in Table 1, there are several other areas of performance that have been enhanced in this new generation.

Part Number

Package (mm)

RoHS & Halogen

FreeTJ(MAX) (°C) VDS

VGS

(max)Max

RDS(ON) @5VGS

QG typ(nC)

QG max(nC)

QGS typ(nC)

QGS max(nC)

QGD typ(nC)

QGD max(nC)

QOSS typ(nC)

QOSS max(nC)

VTH typ

QRR (nC)

ID (A) Pulsed ID (A)

EPC1015 LGA 4.1x1.6 No 125 40 6 4 11.6 N/A 3.8 N/A 2.2 N/A 18.5 N/A 1.4 0 100 33

EPC2015 LGA 4.1x1.6 Yes 150 40 6 4 10.5 11.6 3 3.5 2.2 2.7 18.5 22 1.4 0 100 33

EPC1014 LGA 1.7x1.1 No 125 40 6 16 3 N/A 1 N/A 0.55 N/A 4.6 N/A 1.4 0 40 10

EPC2014 LGA 1.7x1.1 Yes 150 40 6 16 2.5 2.8 0.57 0.7 0.48 0.6 4.8 6.0 1.4 0 40 10

EPC1001 LGA 4.1x1.6 No 125 100 6 7 10.5 N/A 3 N/A 3.3 N/A 32 N/A 1.4 0 150 25

EPC2001 LGA 4.1x1.6 Yes 125 100 6 7 8 10 2.3 2.8 2.2 2.7 35 40 1.4 0 150 25

EPC1007 LGA 1.7x1.1 No 125 100 6 30 2.7 N/A 0.75 N/A 1 - N/A 8 N/A 1.4 0 25 6

EPC2007 LGA 1.7x1.1 Yes 125 100 6 30 2.1 2.7 0.5 0.7 0.6 1.2 10 15 1.4 0 25 6

EPC1010 LGA 3.6x1.6 No 125 200 6 25 7.5 N/A 1.5 N/A 3.5 N/A 40 N/A 1.4 0 40 12

EPC2010 LGA 3.6x1.6 Yes 125 200 6 25 5 7.5 1.3 2 1.7 2.2 41 48 1.4 0 60 12

EPC1012 LGA 1.7x0.9 No 125 200 6 100 1.9 N/A 0.37 N/A 0.9 N/A 10 N/A 1.4 0 12 3

EPC2012 LGA 1.7x0.9 Yes 125 200 6 100 1.5 1.8 0.33 0.41 0.57 0.75 11 14 1.4 0 15 3

Table 1

New!

New!

New!

New!

New!

New!

http://www.epc-co.com




Figure 2: EPC1001 typical output and transfer characteristics

I D –

Drai

n Cu

rrent

(A)

VDS – Drain to Source Voltage (V)

100

90

80

70

60

50

40

30

20

10

0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VGS

GS

GS

GS

= 5V = 4V = 3V = 2

I D –

Drai

n Cu

rrent

(A)

VGS – Gate-to-Source Voltage (V)

80

70

60

50

40

30

20

10

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3V

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

VGS – Gate to Source Voltage (V)

16

14

12

10

8

6

4

2

02.5 3 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 40 AID = 80 A


20

15

10

5

02.5 3 3.5 4 4.5 5 5.5

ID = 25 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.2

1

0.8

0.6

0.4

0.2

00 10 20 30 40 50 60 70 80 90 100

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

V GS –

Gat

e to S

ourc

e Vo

ltage

(V)

QG – Gate Charge (nC)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10 12

ID = 25 AVDS = 50 V

Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics

Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature

Figure 5: Capacitance Figure 6: Gate Charge

Typical Output Characteristics Transfer Characteristics

Figure 3: EPC2001 RDS(ON vs VGS for various current levels. These RoHS parts are fully enhanced at 40 A with 4 V on the gate.

Figure 4: EPC1001 RDS(ON vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 40 A.

I D –

Drai

n Cu

rrent

(A)


100

90

80

70

60

50

40

30

20

10

0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VGS

GS

GS

GS

= 5V = 4V = 3V = 2

I D –

Drai

n Cu

rrent

(A)


100

80

60

40

20

00 0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)


16

18

20

14

12

10

8

6

4

2

02.5 2 3 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 40 AID = 80 A


20

15

10

5

02.5 2 3 3.5 4 4.5 5 5.5

ID = 25 A

VDS = 3V

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.2

1

0.8

0.6

0.4

0.2

00 10 20 30 40 50 60 70 80 90 100

V GS –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10

ID = 25 AVDS = 50 V




COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

I D –

Drai

n Cu

rrent

(A)


100

90

80

70

60

50

40

30

20

10

0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VGS

GS

GS

GS

= 5V = 4V = 3V = 2

I D –

Drai

n Cu

rrent

(A)


80

70

60

50

40

30

20

10

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3V

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)


16

14

12

10

8

6

4

2

02.5 3 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 40 AID = 80 A


20

15

10

5

02.5 3 3.5 4 4.5 5 5.5

ID = 25 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.2

1

0.8

0.6

0.4

0.2

00 10 20 30 40 50 60 70 80 90 100

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

V GS –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10 12

ID = 25 AVDS = 50 V




RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents

Figure 1: EPC2001(RoHS) typical output and transfer characteristics

I D –

Drai

n Cu

rrent

(A)


100

90

80

70

60

50

40

30

20

10

0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VGS

GS

GS

GS

= 5V = 4V = 3V = 2

I D –

Drai

n Cu

rrent

(A)


100

80

60

40

20

00 0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)


16

18

20

14

12

10

8

6

4

2

02.5 2 3 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 40 AID = 80 A


20

15

10

5

02.5 2 3 3.5 4 4.5 5 5.5

ID = 25 A

VDS = 3V

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.2

1

0.8

0.6

0.4

0.2

00 10 20 30 40 50 60 70 80 90 100

V GS –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10

ID = 25 AVDS = 50 V




COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


EPC2001 Compared with EPC1001The four figures on the following page compare the 100 V, 25 A EPC2001 (Figure 1) with the prior-generation EPC1001 (Figure 2) typical output and transfer char-acteristics. The new generation product performs significantly better at higher currents. In addition to less conduction loss at higher current, the new-generation EPC2001 has improved RDS(ON) at lower gate-source voltages (see Figures 3 and 4 comparisons below). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increasing dv/dt immunity.






I D Dr

ain

Curre

nt (A

)


20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VGS = 5VGS = 4VGS = 3VGS = 2

I D Dr

ain

Curre

nt (A

)


18

16

14

12

10

8

6

4

2

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


70

60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 4 AID = 6 AID = 10 AID = 20 A

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


90

80

70

60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 6 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 10 20 30 40 50 60 70 80 90 100

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

V GS –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 0.5 1 1.5 2 2.5 3

ID = 6 AVDS = 50 V


Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature

Figure 5: Capacitance Figure 6: Gate ChargeFigure 7: EPC2007 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 10 A with 4 V on the gate.

Figure 8: EPC1007 RDS(ON) vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 10 A.

I D Dr

ain

Curre

nt (A

)


20

25

30

35

40

15

10

5

00 0.5 1 1.5 2


I D Dr

ain

Curre

nt (A

)


40

35

30

25

20

15

10

5

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


70

60

50

40

30

20

10

02.5 2 3 3.5 4 4.5 5

ID = 4 AID = 6 AID = 10 AID = 20 A

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


100

80

60

40

20

02.5 3 3.5 4 4.5 5 2

ID = 6 A

25˚C125˚C


Figure 3: RDS(ON) vs. V for Various Current Figure 4: RDS(ON) vs. VGSGS for Various Temperature

I D Dr

ain

Curre

nt (A

)


20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D Dr

ain

Curre

nt (A

)


18

16

14

12

10

8

6

4

2

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


70

60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 4 AID = 6 AID = 10 AID = 20 A

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


90

80

70

60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 6 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 10 20 30 40 50 60 70 80 90 100

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

V GS –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 0.5 1 1.5 2 2.5 3

ID = 6 AVDS = 50 V





EPC2007 Compared with EPC1007The four figures below compare the 100 V, 6 A EPC2007 (Figure 5) with the prior-generation EPC1007 (Figure 6) typical output and transfer characteristics. The new generation product performs significantly better at higher currents. In addition to less conduction loss at higher current, the new-generation EPC2001 has improved RDS(ON) at lower gate-source voltages (see Figure 7 and 8 comparisons below). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increas-ing dv/dt immunity.

Figure 5: EPC2007 (RoHS) typical output and transfer characteristics

Typical Output Characteristics

I D Dr

ain

Curre

nt (A

)


20

25

30

35

40

15

10

5

00 0.5 1 1.5 2


I D Dr

ain

Curre

nt (A

)


40

35

30

25

20

15

10

5

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


70

60

50

40

30

20

10

02.5 2 3 3.5 4 4.5 5

ID = 4 AID = 6 AID = 10 AID = 20 A

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


100

80

60

40

20

02.5 3 3.5 4 4.5 5 2

ID = 6 A

25˚C125˚C


Figure 3: RDS(ON) vs. V for Various Current Figure 4: RDS(ON) vs. VGSGS for Various Temperature

Transfer Characteristics




I D –

Drai

n Cu

rrent

(A)


120

100

80

60

40

20

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D –

Drai

n Cu

rrent

(A)


V GS –

Gat

e to S

ourc

e Vol

tage

(V)

100

90

80

70

60

50

40

30

20

10

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


12

10

8

6

4

2

02.5 3 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 50 AID = 100 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


16

14

12

10

8

6

4

2

02.5 3 3.5 4 4.5 5 5.5

ID = 33 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.2

1

0.8

0.6

0.4

0.2

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10 12

ID = 33 AVDS = 20 V






EPC2015 Compared with EPC1015The EPC2015 is a 40 V, 33 A FET. The new generation product has been upgraded to an operating temperature of 150°C compared with 125°C for the prior generation, allowing the user more operating headroom. The graphs below compare the EPC2015 (Figure 9) with the prior-generation EPC1015 (Figure 10) typical output and transfer characteristics. As with the 100 V FETs discussed above, the new generation 40 V product performs significantly better at higher currents and increased VGS nec-essary for significant current conduction. The new-generation EPC2015 also has improved RDS(ON) at lower gate-source voltages (see comparisons in Figures 11 and 12).



I D –

Drai

n Cu

rrent

(A)


150

100

50

0 0 0.5 1 1.5 2

VGS

GS

GS

GS

= 5V = 4V = 3V = 2

I D –

Drai

n Cu

rrent

(A)


150

100

50

00.5 1 1.5 2 2.5 3 3.5 4 4.5

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)


10

8

6

4

2

02 3 2.5 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 50 AID = 100 A


20

15

10

5

02 2.5 3 3.5 4 4.5 5 5.5

ID = 33 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.6

1.8

1.2

1

0.8

0.6

0.4

0.2

00 10 20 30

V G –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 1210

ID = 33 AVD = 20 V




COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

25˚C125˚C

VDS = 3V

I D –

Drai

n Cu

rrent

(A)


150

100

50

0 0 0.5 1 1.5 2

VGS

GS

GS

GS

= 5V = 4V = 3V = 2

I D –

Drai

n Cu

rrent

(A)


150

100

50

00.5 1 1.5 2 2.5 3 3.5 4 4.5

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)

R DS(

ON) –

Dra

in t

o Sou

rce R

esist

ance

(mΩ

)


10

8

6

4

2

02 3 2.5 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 50 AID = 100 A


20

15

10

5

02 2.5 3 3.5 4 4.5 5 5.5

ID = 33 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.6

1.8

1.2

1

0.8

0.6

0.4

0.2

00 10 20 30

V G –

Gat

e to S

ourc

e Vo

ltage

(V)


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 1210

ID = 33 AVD = 20 V




COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

25˚C125˚C

VDS = 3V

I D –

Drai

n Cu

rrent

(A)


120

100

80

60

40

20

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D –

Drai

n Cu

rrent

(A)


V GS –

Gat

e to S

ourc

e Vol

tage

(V)

100

90

80

70

60

50

40

30

20

10

0.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


12

10

8

6

4

2

02.5 3 3.5 4 4.5 5 5.5

ID = 10 AID = 20 AID = 50 AID = 100 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


16

14

12

10

8

6

4

2

02.5 3 3.5 4 4.5 5 5.5

ID = 33 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


1.4

1.2

1

0.8

0.6

0.4

0.2

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 2 4 6 8 10 12

ID = 33 AVDS = 20 V




Figure 11: EPC2015 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 50 A with 4 V on the gate.






EPC2014 Compared with EPC1014The EPC2014 is a 40 V, 10 A FET. The new generation product has been upgraded to an operating temperature of 150°C compared with 125°C for the prior generation, allowing the user more operating headroom. The graphs below compare the EPC2014 (Figure 13) with the prior-generation EPC1014 (Figure 14) typical output and transfer characteristics. As with the FETs discussed above, the new generation 40 V product performs significantly better at higher currents and increased VGS neces-sary for significant current conduction. The new-generation EPC2014 also has improved RDS(ON) at lower gate-source voltages (see comparisons in Figures 15 and 16).

I D Dr

ain

Curre

nt (A

)


40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

I D Dr

ain

Curre

nt (A

)


40

25

30

35

20

15

10

5

00 0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VDS = 3 V



V GS –

Gat

e to S

ourc

e Vol

tage

(V)

C – Ca

pacit

ance

(nF)


0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4

3

2

1

00 0.5 1 1.5 2 2.5

ID = 10 AVD = 20 V




I D Dr

ain

Curre

nt (A

)


40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D Dr

ain

Curre

nt (A

)


V GS –

Gat

e to S

ourc

e Vol

tage

(V)

30

25

20

15

10

5

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


45

40

35

30

25

20

15

10

5

02.5 3 3.5 4 4.5 5 5.5

ID = 4 AID = 6 AID = 15 AID = 30 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 10 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 0.5 1 1.5 2 2.5 3

ID = 10 AVDS = 20 V






I D Dr

ain

Curre

nt (A

)


40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

I D Dr

ain

Curre

nt (A

)


40

25

30

35

20

15

10

5

00 0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VDS = 3 V



V GS –

Gat

e to S

ourc

e Vol

tage

(V)

C – Ca

pacit

ance

(nF)


0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4

3

2

1

00 0.5 1 1.5 2 2.5

ID = 10 AVD = 20 V


I D Dr

ain

Curre

nt (A

)


40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D Dr

ain

Curre

nt (A

)


V GS –

Gat

e to S

ourc

e Vol

tage

(V)

30

25

20

15

10

5

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


45

40

35

30

25

20

15

10

5

02.5 3 3.5 4 4.5 5 5.5

ID = 4 AID = 6 AID = 15 AID = 30 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 10 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.35

0.3

0.25

0.2

0.15

0.1

0.05

00 5 10 15 20 25 30 35 40

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 0.5 1 1.5 2 2.5 3

ID = 10 AVDS = 20 V











I D –

Drai

n Cu

rrent

(A)


45

40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D –

Drai

n Cu

rrent

(A)


40

35

30

25

20

15

10

5

0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


50

45

40

35

30

25

20

15

10

5

02.5 3 3.5 4 4.5 5 5.5

ID = 5 AID = 10 AID = 25 AID = 50 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


70

60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 12 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.7

0.6

0.5

0.4

0.3

0.2

0.1

00 20 40 60 80 100 120 140 160 180 200

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 1 2 3 4 5 6 7 8

ID = 12 AVDS = 100 V




V GS –

Gat

e to S

ourc

e Vol

tage

(V)


Figure 17: EPC2010 (RoHS) typical output and transfer characteristics. Note that the EPC2010 is rated up to 60 A pulsed.

I D –

Drai

n Cu

rrent

(A)


50

60

40

30

20

10

00 0.5 1 1.5 2 2.5 3

I D –

Drai

n Cu

rrent

(A)


40

50

60

30

20

10

00.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


50

60

40

30

20

10

02.5 2 3 3.5 4 4.5 5 5.5

ID = 10 A ID = 20 AID = 40 AID = 60 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)





50

60

40

30

20

10

02.5 2 3 3.5 4 4.5 5 5.5

25˚C125˚C


EPC2010 Compared with EPC1010The four figures below compare the 200 V, 12 A EPC2010 (Figure 17) with the prior-generation EPC1010 (Figure 18) typical output and transfer characteristics. Consistent with the four parts discussed above, the new generation 200 V product also performs significantly better at higher currents. The EPC2010 is also rated for 60 A maximum ID (pulsed) compared with only 40 A in the prior generation.

In addition to a higher pulsed current rating and less conduction loss at higher current, the new-generation EPC2010 has improved RDS(ON) at lower gate-source voltages (see Figure19 and 20 comparisons on the following page). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increasing dv/dt immunity.




EPC2012 Compared with EPC1012The four figures below and on the following page compare the 200 V, 3 A EPC2012 (Figure 21) with the prior-generation EPC1012 (Figure 22) typical output and transfer characteristics. Consistent with the five parts discussed above, the new generation 200 V product also performs significantly better at higher currents. The EPC2012 is also rated for 15 A maximum ID (pulsed) compared with only 12 A in the prior generation.

Figure 21: EPC2012 (RoHS) typical output and transfer characteristics. Note that the EPC2012 is rated up to 15 A pulsed.

I D –

Drai

n Cu

rrent

(A)


15

10

5

00 0.5 1 1.5 2


I D –

Drai

n Cu

rrent

(A)


15

10

5

00 0.5 1.5 1 2 2.5 3 3.5 4 4.5

25˚C125˚C

VD = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


200

150

100

50

02.5 2 3 3.5 4 4.5 5 5.5

ID = 3 AID = 6 AID = 10 AID = 15 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


250

200

100

50

150

02 2.5 3 3.5 4 4.5 5 5.5

ID = 3 A

25˚C125˚C


Figure 3: RDS(ON) vs. VGS for Various Drain Currents Figure 4: RDS(ON) vs. VGS for Various Temperatures


The dv/dt immunity is further improved in the second-generation EPC2010 because of the significantly improved Miller ratio [13]. As can be seen in Table 1 above, the Miller ratio (QGD/QGS(VTH)) has improved from a typical value of 2.3 down to a value of 1.3 for the EPC2010.

I D –

Drai

n Cu

rrent

(A)


45

40

35

30

25

20

15

10

5

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D –

Drai

n Cu

rrent

(A)


40

35

30

25

20

15

10

5

0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


50

45

40

35

30

25

20

15

10

5

02.5 3 3.5 4 4.5 5 5.5

ID = 5 AID = 10 AID = 25 AID = 50 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


70

60

50

40

30

20

10

02.5 3 3.5 4 4.5 5 5.5

ID = 12 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.7

0.6

0.5

0.4

0.3

0.2

0.1

00 20 40 60 80 100 120 140 160 180 200

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 1 2 3 4 5 6 7 8

ID = 12 AVDS = 100 V




V GS –

Gat

e to S

ourc

e Vol

tage

(V)

I D –

Drai

n Cu

rrent

(A)


50

60

40

30

20

10

00 0.5 1 1.5 2 2.5 3

I D –

Drai

n Cu

rrent

(A)


40

50

60

30

20

10

00.5 1 1.5 2 2.5 3 3.5 4 4.5

25˚C125˚C

VDS = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


50

60

40

30

20

10

02.5 2 3 3.5 4 4.5 5 5.5

ID = 10 A ID = 20 AID = 40 AID = 60 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)





50

60

40

30

20

10

02.5 2 3 3.5 4 4.5 5 5.5

25˚C125˚C









I D –

Drai

n Cu

rrent

(A)


15

10

5

00 0.5 1 1.5 2


I D –

Drai

n Cu

rrent

(A)


15

10

5

00 0.5 1.5 1 2 2.5 3 3.5 4 4.5

25˚C125˚C

VD = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


200

150

100

50

02.5 2 3 3.5 4 4.5 5 5.5

ID = 3 AID = 6 AID = 10 AID = 15 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


250

200

100

50

150

02 2.5 3 3.5 4 4.5 5 5.5

ID = 3 A

25˚C125˚C


Figure 3: RDS(ON) vs. VGS for Various Drain Currents Figure 4: RDS(ON) vs. VGS for Various Temperatures

I D –

Drai

n Cu

rrent

(A)


12

10

8

6

4

2

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D –

Drai

n Cu

rrent

(A)


V GS –

Gat

e to S

ourc

e Vol

tage

(V)

9

8

7

6

5

4

3

2

1

0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VD = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


200

180

160

140

120

100

80

60

40

20

02.5 3 3.5 4 4.5 5 5.5

ID = 3 AID = 6 AID = 10 AID = 15 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


250

200

150

100

50

02.5 3 3.5 4 4.5 5 5.5

ID = 3 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.18

0.16

0.14

0.12

0.1

0.08

0.06

0.04

0.02

00 20 40 60 80 100 120 140 160 180 200

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 0.2 0.4 0.6 0.0 1 1.2 1.4 1.6 1.0 2

ID = 3 AVDS = 100 V





The dv/dt immunity is further improved in the second-generation EPC2012 because of the significantly improved Miller ratio [13]. As can be seen in Table 1 above, the Miller ratio (QGD/QGS(VTH)) has improved from a typical value of 2.4 down to a value of 1.8 for the EPC2012.

In addition to a higher pulsed current rating and less conduction loss at higher current, the new-generation EPC2012 has improved RDS(ON) at lower gate-source volt-ages (see Figure 23 and 24 comparisons below). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increasing dv/dt immunity.


Typical Output Characteristics Transfer CharacteristicsI D

– Dr

ain

Curre

nt (A

)


12

10

8

6

4

2

00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2


I D –

Drai

n Cu

rrent

(A)


V GS –

Gat

e to S

ourc

e Vol

tage

(V)

9

8

7

6

5

4

3

2

1

0.5 1 1.5 2 2.5 3 3.5 4

25˚C125˚C

VD = 3 V

R DS(

ON) –

Dra

in to

Sour

ce R

esist

ance

(mΩ

)


200

180

160

140

120

100

80

60

40

20

02.5 3 3.5 4 4.5 5 5.5

ID = 3 AID = 6 AID = 10 AID = 15 A R D

S(ON

) – D

rain

to So

urce

Res

istan

ce (mΩ

)


250

200

150

100

50

02.5 3 3.5 4 4.5 5 5.5

ID = 3 A

25˚C125˚C

C – Ca

pacit

ance

(nF)


0.18

0.16

0.14

0.12

0.1

0.08

0.06

0.04

0.02

00 20 40 60 80 100 120 140 160 180 200

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD


5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

00 0.2 0.4 0.6 0.0 1 1.2 1.4 1.6 1.0 2

ID = 3 AVDS = 100 V







Figure 26: Normalized ZθJB Curve Set for EPC2XXX Products

Normalized Maximum Transient Thermal Impedance

tp, Rectangular Pulse Duration, seconds

Z θJB

, Nor

mal

ized T

herm

alIm

peda

nce

Duty Factors:

Notes:Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJB x RθJB + TB

PDM

t1

t2

0.50.20.10.050.020.01

Single Pulse

1

0.1

0.01

0.001

0.000110-5 10-4 10-3 10-2 10-1 1 10 100

Figure 25: Typical thermal resistance for EPC2001, EPC2007, EPC2015, EPC2014, EPC2010 and EPC2012.

New Technical InformationThe data sheets for the EPC2XXX series of lead free eGaN FETs, starting with the EPC2001, EPC2007, EPC2015, EPC2014, EPC2010 and EPC2012 have additional infor-mation to help the designer get the maximum performance from the product. Thermal resistance data is supplied for both DC and transient operation as shown in Figures 25 and 26 below [14].

TYP

RθJC Thermal Resistance, Junction to Case 1.6 °C/W

RθJB Thermal Resistance, Junction to Board 15 °C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1) 54 °C/W

TYP




TYP




EPC2001 and EPC2015

EPC2010

EPC2012, EPC2014 and EPC2007

Thermal Characteristics



Note 1: RθJA is determinged with the device mounted on one square inch of copper pad, single layer 2 oz. copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.




Assembly Considerations for Second Generation eGaN FETsThere are three physical changes to the new gen-eration of lead-free product.

The first change is that there is a connection to the silicon substrate that has been brought to the sur-face (see Figures 27, 28, 29 and 30). It is advised that the substrate be connected to source poten-tial to get the maximum dynamic performance from the device.

The second change is the width of the solder bars. The EPC2001, EPC2007, EPC2014 and EPC2015 all have 200 μm wide solder bars compared with 250 μm in the prior generation. The EPC2010 and EPC2012 both have a 250 μm wide solder bar com-pared with 300 μm in the prior generation.

The third change is that the height of the solder bars has been increased from 70μm +/-20 to 100 μm +/- 20 for all the new generation parts. The added height allows for greater post-assembly clearance between the FET and the PCB. This clear-ance makes it easier to clean out foreign materials and avoids the harmful accumulation of particles.

SummaryThe new-generation of eGaN FETs are lead free and halogen free and have improved electrical perfor-mance, matched with additional support documen-tation to help the system designer deliver leading edge eGaN FET based product faster and with less engineering effort. These products maintain “back-ward compatibility” with the prior generation of eGaN FETs from EPC [15].

Figure 28: Magnified die photo of EPC2010 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.

Figure 29: Magnified die photo of EPC2014 and EPC2007 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.

Figure 30: Magnified die photo of EPC2012 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.

Figure 27: Magnified die photo of EPC2015 or EPC2001 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.

This terminal is connected

to the substrate

This dimension has been decreased to 200µm


to the substrate


to the substrate


to the substrate



This dimension has been decreased to

200µm




[1] http://epc-co.com/epc/documents/datasheets/EPC1001_datasheet_final.pdf












[13] Johan Strydom, “The eGaN FET-Silicon Power Shoot-Out: 2: Drivers, Layout”, Power Electronics Technology, January 1, 2011, http://powerelectronics.com/power_semiconductors/first-article-series-gallium-nitride-201101/

[14] John Worman and Yanping Ma, “Thermal Performance of EPC eGaN™ FETs”, http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf

[15] http://epc-co.com/epc/Products/eGaNFETs.aspx


second generation egan® fets are lead free

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