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SSeennssoorrss && TTrraannssdduucceerrss

Volume 132, Issue 9, September 2011

www.sensorsportal.com ISSN 1726-5479

Editors-in-Chief: professor Sergey Y. Yurish, tel.: +34 696067716, e-mail: [email protected]

Editors for Western Europe Meijer, Gerard C.M., Delft University of Technology, The Netherlands Ferrari, Vittorio, Universitá di Brescia, Italy

Editor South America Costa-Felix, Rodrigo, Inmetro, Brazil

Editor for Eastern Europe Sachenko, Anatoly, Ternopil State Economic University, Ukraine

Editors for North America Datskos, Panos G., Oak Ridge National Laboratory, USA Fabien, J. Josse, Marquette University, USA Katz, Evgeny, Clarkson University, USA

Editor for Asia Ohyama, Shinji, Tokyo Institute of Technology, Japan

Editor for Asia-Pacific Mukhopadhyay, Subhas, Massey University, New Zealand

Editorial Advisory Board

Abdul Rahim, Ruzairi, Universiti Teknologi, Malaysia Ahmad, Mohd Noor, Nothern University of Engineering, Malaysia Annamalai, Karthigeyan, National Institute of Advanced Industrial Science

and Technology, Japan Arcega, Francisco, University of Zaragoza, Spain Arguel, Philippe, CNRS, France Ahn, Jae-Pyoung, Korea Institute of Science and Technology, Korea Arndt, Michael, Robert Bosch GmbH, Germany Ascoli, Giorgio, George Mason University, USA Atalay, Selcuk, Inonu University, Turkey Atghiaee, Ahmad, University of Tehran, Iran Augutis, Vygantas, Kaunas University of Technology, Lithuania Avachit, Patil Lalchand, North Maharashtra University, India Ayesh, Aladdin, De Montfort University, UK Azamimi, Azian binti Abdullah, Universiti Malaysia Perlis, Malaysia Bahreyni, Behraad, University of Manitoba, Canada Baliga, Shankar, B., General Monitors Transnational, USA Baoxian, Ye, Zhengzhou University, China Barford, Lee, Agilent Laboratories, USA Barlingay, Ravindra, RF Arrays Systems, India Basu, Sukumar, Jadavpur University, India Beck, Stephen, University of Sheffield, UK Ben Bouzid, Sihem, Institut National de Recherche Scientifique, Tunisia Benachaiba, Chellali, Universitaire de Bechar, Algeria Binnie, T. David, Napier University, UK Bischoff, Gerlinde, Inst. Analytical Chemistry, Germany Bodas, Dhananjay, IMTEK, Germany Borges Carval, Nuno, Universidade de Aveiro, Portugal Bousbia-Salah, Mounir, University of Annaba, Algeria Bouvet, Marcel, CNRS – UPMC, France Brudzewski, Kazimierz, Warsaw University of Technology, Poland Cai, Chenxin, Nanjing Normal University, China Cai, Qingyun, Hunan University, China Campanella, Luigi, University La Sapienza, Italy Carvalho, Vitor, Minho University, Portugal Cecelja, Franjo, Brunel University, London, UK Cerda Belmonte, Judith, Imperial College London, UK Chakrabarty, Chandan Kumar, Universiti Tenaga Nasional, Malaysia Chakravorty, Dipankar, Association for the Cultivation of Science, India Changhai, Ru, Harbin Engineering University, China Chaudhari, Gajanan, Shri Shivaji Science College, India Chavali, Murthy, N.I. Center for Higher Education, (N.I. University), India Chen, Jiming, Zhejiang University, China Chen, Rongshun, National Tsing Hua University, Taiwan Cheng, Kuo-Sheng, National Cheng Kung University, Taiwan Chiang, Jeffrey (Cheng-Ta), Industrial Technol. Research Institute, Taiwan Chiriac, Horia, National Institute of Research and Development, Romania Chowdhuri, Arijit, University of Delhi, India Chung, Wen-Yaw, Chung Yuan Christian University, Taiwan Corres, Jesus, Universidad Publica de Navarra, Spain Cortes, Camilo A., Universidad Nacional de Colombia, Colombia Courtois, Christian, Universite de Valenciennes, France Cusano, Andrea, University of Sannio, Italy D'Amico, Arnaldo, Università di Tor Vergata, Italy De Stefano, Luca, Institute for Microelectronics and Microsystem, Italy Deshmukh, Kiran, Shri Shivaji Mahavidyalaya, Barshi, India Dickert, Franz L., Vienna University, Austria Dieguez, Angel, University of Barcelona, Spain Dighavkar, C. G., M.G. Vidyamandir’s L. V.H. College, India Dimitropoulos, Panos, University of Thessaly, Greece Ding, Jianning, Jiangsu Polytechnic University, China Djordjevich, Alexandar, City University of Hong Kong, Hong Kong

Donato, Nicola, University of Messina, Italy Donato, Patricio, Universidad de Mar del Plata, Argentina Dong, Feng, Tianjin University, China Drljaca, Predrag, Instersema Sensoric SA, Switzerland Dubey, Venketesh, Bournemouth University, UK Enderle, Stefan, Univ.of Ulm and KTB Mechatronics GmbH, Germany Erdem, Gursan K. Arzum, Ege University, Turkey Erkmen, Aydan M., Middle East Technical University, Turkey Estelle, Patrice, Insa Rennes, France Estrada, Horacio, University of North Carolina, USA Faiz, Adil, INSA Lyon, France Fericean, Sorin, Balluff GmbH, Germany Fernandes, Joana M., University of Porto, Portugal Francioso, Luca, CNR-IMM Institute for Microelectronics and Microsystems, Italy Francis, Laurent, University Catholique de Louvain, Belgium Fu, Weiling, South-Western Hospital, Chongqing, China Gaura, Elena, Coventry University, UK Geng, Yanfeng, China University of Petroleum, China Gole, James, Georgia Institute of Technology, USA Gong, Hao, National University of Singapore, Singapore Gonzalez de la Rosa, Juan Jose, University of Cadiz, Spain Granel, Annette, Goteborg University, Sweden Graff, Mason, The University of Texas at Arlington, USA Guan, Shan, Eastman Kodak, USA Guillet, Bruno, University of Caen, France Guo, Zhen, New Jersey Institute of Technology, USA Gupta, Narendra Kumar, Napier University, UK Habib, Maki K., American University in Cairo, Egypt Hadjiloucas, Sillas, The University of Reading, UK Haider, Mohammad R., Sonoma State University, USA Hashsham, Syed, Michigan State University, USA Hasni, Abdelhafid, Bechar University, Algeria Hernandez, Alvaro, University of Alcala, Spain Hernandez, Wilmar, Universidad Politecnica de Madrid, Spain Homentcovschi, Dorel, SUNY Binghamton, USA Horstman, Tom, U.S. Automation Group, LLC, USA Hsiai, Tzung (John), University of Southern California, USA Huang, Jeng-Sheng, Chung Yuan Christian University, Taiwan Huang, Star, National Tsing Hua University, Taiwan Huang, Wei, PSG Design Center, USA Hui, David, University of New Orleans, USA Jaffrezic-Renault, Nicole, Ecole Centrale de Lyon, France Jaime Calvo-Galleg, Jaime, Universidad de Salamanca, Spain James, Daniel, Griffith University, Australia Janting, Jakob, DELTA Danish Electronics, Denmark Jiang, Liudi, University of Southampton, UK Jiang, Wei, University of Virginia, USA Jiao, Zheng, Shanghai University, China John, Joachim, IMEC, Belgium Kalach, Andrew, Voronezh Institute of Ministry of Interior, Russia Kang, Moonho, Sunmoon University, Korea South Kaniusas, Eugenijus, Vienna University of Technology, Austria Katake, Anup, Texas A&M University, USA Kausel, Wilfried, University of Music, Vienna, Austria Kavasoglu, Nese, Mugla University, Turkey Ke, Cathy, Tyndall National Institute, Ireland Khelfaoui, Rachid, Université de Bechar, Algeria Khan, Asif, Aligarh Muslim University, Aligarh, India Kim, Min Young, Kyungpook National University, Korea South Ko, Sang Choon, Electronics. and Telecom. Research Inst., Korea South Kotulska, Malgorzata, Wroclaw University of Technology, Poland Kockar, Hakan, Balikesir University, Turkey

Kong, Ing, RMIT University, Australia Kratz, Henrik, Uppsala University, Sweden Krishnamoorthy, Ganesh, University of Texas at Austin, USA Kumar, Arun, University of South Florida, USA Kumar, Subodh, National Physical Laboratory, India Kung, Chih-Hsien, Chang-Jung Christian University, Taiwan Lacnjevac, Caslav, University of Belgrade, Serbia Lay-Ekuakille, Aime, University of Lecce, Italy Lee, Jang Myung, Pusan National University, Korea South Lee, Jun Su, Amkor Technology, Inc. South Korea Lei, Hua, National Starch and Chemical Company, USA Li, Genxi, Nanjing University, China Li, Hui, Shanghai Jiaotong University, China Li, Xian-Fang, Central South University, China Li, Yuefa, Wayne State University, USA Liang, Yuanchang, University of Washington, USA Liawruangrath, Saisunee, Chiang Mai University, Thailand Liew, Kim Meow, City University of Hong Kong, Hong Kong Lin, Hermann, National Kaohsiung University, Taiwan Lin, Paul, Cleveland State University, USA Linderholm, Pontus, EPFL - Microsystems Laboratory, Switzerland Liu, Aihua, University of Oklahoma, USA Liu Changgeng, Louisiana State University, USA Liu, Cheng-Hsien, National Tsing Hua University, Taiwan Liu, Songqin, Southeast University, China Lodeiro, Carlos, University of Vigo, Spain Lorenzo, Maria Encarnacio, Universidad Autonoma de Madrid, Spain Lukaszewicz, Jerzy Pawel, Nicholas Copernicus University, Poland Ma, Zhanfang, Northeast Normal University, China Majstorovic, Vidosav, University of Belgrade, Serbia Malyshev, V.V., National Research Centre ‘Kurchatov Institute’, Russia Marquez, Alfredo, Centro de Investigacion en Materiales Avanzados, Mexico Matay, Ladislav, Slovak Academy of Sciences, Slovakia Mathur, Prafull, National Physical Laboratory, India Maurya, D.K., Institute of Materials Research and Engineering, Singapore Mekid, Samir, University of Manchester, UK Melnyk, Ivan, Photon Control Inc., Canada Mendes, Paulo, University of Minho, Portugal Mennell, Julie, Northumbria University, UK Mi, Bin, Boston Scientific Corporation, USA Minas, Graca, University of Minho, Portugal Moghavvemi, Mahmoud, University of Malaya, Malaysia Mohammadi, Mohammad-Reza, University of Cambridge, UK Molina Flores, Esteban, Benemérita Universidad Autónoma de Puebla,

Mexico Moradi, Majid, University of Kerman, Iran Morello, Rosario, University "Mediterranea" of Reggio Calabria, Italy Mounir, Ben Ali, University of Sousse, Tunisia Mulla, Imtiaz Sirajuddin, National Chemical Laboratory, Pune, India Nabok, Aleksey, Sheffield Hallam University, UK Neelamegam, Periasamy, Sastra Deemed University, India Neshkova, Milka, Bulgarian Academy of Sciences, Bulgaria Oberhammer, Joachim, Royal Institute of Technology, Sweden Ould Lahoucine, Cherif, University of Guelma, Algeria Pamidighanta, Sayanu, Bharat Electronics Limited (BEL), India Pan, Jisheng, Institute of Materials Research & Engineering, Singapore Park, Joon-Shik, Korea Electronics Technology Institute, Korea South Penza, Michele, ENEA C.R., Italy Pereira, Jose Miguel, Instituto Politecnico de Setebal, Portugal Petsev, Dimiter, University of New Mexico, USA Pogacnik, Lea, University of Ljubljana, Slovenia Post, Michael, National Research Council, Canada Prance, Robert, University of Sussex, UK Prasad, Ambika, Gulbarga University, India Prateepasen, Asa, Kingmoungut's University of Technology, Thailand Pullini, Daniele, Centro Ricerche FIAT, Italy Pumera, Martin, National Institute for Materials Science, Japan Radhakrishnan, S. National Chemical Laboratory, Pune, India Rajanna, K., Indian Institute of Science, India Ramadan, Qasem, Institute of Microelectronics, Singapore Rao, Basuthkar, Tata Inst. of Fundamental Research, India Raoof, Kosai, Joseph Fourier University of Grenoble, France Rastogi Shiva, K. University of Idaho, USA Reig, Candid, University of Valencia, Spain Restivo, Maria Teresa, University of Porto, Portugal Robert, Michel, University Henri Poincare, France Rezazadeh, Ghader, Urmia University, Iran Royo, Santiago, Universitat Politecnica de Catalunya, Spain Rodriguez, Angel, Universidad Politecnica de Cataluna, Spain Rothberg, Steve, Loughborough University, UK Sadana, Ajit, University of Mississippi, USA Sadeghian Marnani, Hamed, TU Delft, The Netherlands Sandacci, Serghei, Sensor Technology Ltd., UK Sapozhnikova, Ksenia, D.I.Mendeleyev Institute for Metrology, Russia Saxena, Vibha, Bhbha Atomic Research Centre, Mumbai, India

Schneider, John K., Ultra-Scan Corporation, USA Sengupta, Deepak, Advance Bio-Photonics, India Seif, Selemani, Alabama A & M University, USA Seifter, Achim, Los Alamos National Laboratory, USA Shah, Kriyang, La Trobe University, Australia Silva Girao, Pedro, Technical University of Lisbon, Portugal Singh, V. R., National Physical Laboratory, India Slomovitz, Daniel, UTE, Uruguay Smith, Martin, Open University, UK Soleymanpour, Ahmad, Damghan Basic Science University, Iran Somani, Prakash R., Centre for Materials for Electronics Technol., India Srinivas, Talabattula, Indian Institute of Science, Bangalore, India Srivastava, Arvind K., NanoSonix Inc., USA Stefan-van Staden, Raluca-Ioana, University of Pretoria, South Africa Stefanescu, Dan Mihai, Romanian Measurement Society, Romania Sumriddetchka, Sarun, National Electronics and Computer Technology Center,

Thailand Sun, Chengliang, Polytechnic University, Hong-Kong Sun, Dongming, Jilin University, China Sun, Junhua, Beijing University of Aeronautics and Astronautics, China Sun, Zhiqiang, Central South University, China Suri, C. Raman, Institute of Microbial Technology, India Sysoev, Victor, Saratov State Technical University, Russia Szewczyk, Roman, Industrial Research Inst. for Automation and Measurement,

Poland Tan, Ooi Kiang, Nanyang Technological University, Singapore, Tang, Dianping, Southwest University, China Tang, Jaw-Luen, National Chung Cheng University, Taiwan Teker, Kasif, Frostburg State University, USA Thirunavukkarasu, I., Manipal University Karnataka, India Thumbavanam Pad, Kartik, Carnegie Mellon University, USA Tian, Gui Yun, University of Newcastle, UK Tsiantos, Vassilios, Technological Educational Institute of Kaval, Greece Tsigara, Anna, National Hellenic Research Foundation, Greece Twomey, Karen, University College Cork, Ireland Valente, Antonio, University, Vila Real, - U.T.A.D., Portugal Vanga, Raghav Rao, Summit Technology Services, Inc., USA Vaseashta, Ashok, Marshall University, USA Vazquez, Carmen, Carlos III University in Madrid, Spain Vieira, Manuela, Instituto Superior de Engenharia de Lisboa, Portugal Vigna, Benedetto, STMicroelectronics, Italy Vrba, Radimir, Brno University of Technology, Czech Republic Wandelt, Barbara, Technical University of Lodz, Poland Wang, Jiangping, Xi'an Shiyou University, China Wang, Kedong, Beihang University, China Wang, Liang, Pacific Northwest National Laboratory, USA Wang, Mi, University of Leeds, UK Wang, Shinn-Fwu, Ching Yun University, Taiwan Wang, Wei-Chih, University of Washington, USA Wang, Wensheng, University of Pennsylvania, USA Watson, Steven, Center for NanoSpace Technologies Inc., USA Weiping, Yan, Dalian University of Technology, China Wells, Stephen, Southern Company Services, USA Wolkenberg, Andrzej, Institute of Electron Technology, Poland Woods, R. Clive, Louisiana State University, USA Wu, DerHo, National Pingtung Univ. of Science and Technology, Taiwan Wu, Zhaoyang, Hunan University, China Xiu Tao, Ge, Chuzhou University, China Xu, Lisheng, The Chinese University of Hong Kong, Hong Kong Xu, Sen, Drexel University, USA Xu, Tao, University of California, Irvine, USA Yang, Dongfang, National Research Council, Canada Yang, Shuang-Hua, Loughborough University, UK Yang, Wuqiang, The University of Manchester, UK Yang, Xiaoling, University of Georgia, Athens, GA, USA Yaping Dan, Harvard University, USA Ymeti, Aurel, University of Twente, Netherland Yong Zhao, Northeastern University, China Yu, Haihu, Wuhan University of Technology, China Yuan, Yong, Massey University, New Zealand Yufera Garcia, Alberto, Seville University, Spain Zakaria, Zulkarnay, University Malaysia Perlis, Malaysia Zagnoni, Michele, University of Southampton, UK Zamani, Cyrus, Universitat de Barcelona, Spain Zeni, Luigi, Second University of Naples, Italy Zhang, Minglong, Shanghai University, China Zhang, Qintao, University of California at Berkeley, USA Zhang, Weiping, Shanghai Jiao Tong University, China Zhang, Wenming, Shanghai Jiao Tong University, China Zhang, Xueji, World Precision Instruments, Inc., USA Zhong, Haoxiang, Henan Normal University, China Zhu, Qing, Fujifilm Dimatix, Inc., USA Zorzano, Luis, Universidad de La Rioja, Spain Zourob, Mohammed, University of Cambridge, UK

Sensors & Transducers Journal (ISSN 1726-5479) is a peer review international journal published monthly online by International Frequency Sensor Association (IFSA). Available in electronic and on CD. Copyright © 2011 by International Frequency Sensor Association. All rights reserved.

SSeennssoorrss && TTrraannssdduucceerrss JJoouurrnnaall

CCoonntteennttss

Volume 132 Issue 9 September 2011

www.sensorsportal.com ISSN 1726-5479

Research Articles

Gas Sensors Based on Inorganic Materials: An Overview K. R. Nemade ..................................................................................................................................... 1 Control Valve Stiction Identification, Modelling, Quantification and Control - A Review Srinivasan Arumugam and Rames C. Panda..................................................................................... 14 Numerical Prediction of a Bi-Directional Micro Thermal Flow Sensors M. Al-Amayrah, A. Al-Salaymeh, M. Kilani, A. Delgado ..................................................................... 25 The Linearity of Optical Tomography: Sensor Model and Experimental Verification Siti Zarina Mohd. Muji, Ruzairi Abdul Rahim, Mohd Hafiz Fazalul Rahiman, Zulkarnay Zakaria, Elmy Johana Mohamad, Mohd Safirin Karis ...................................................................................... 40 Structure Improvement and Simulation Research of a Three-dimensional Force Flexible Tactile Sensor Based on Conductive Rubber Shanhong Li, Xuekun Zhuang, Fei Xu, Junxiang Ding, Feng Shuang, Yunjian Ge...................................................... 47 Modeling and Simulation of Wet Gas Flow in Venturi Flow Meter Hossein Seraj, Mohd Fuaad Rahmat, Marzuki Khaled, Rubiyah Yusof and Iliya Tizhe Thuku ......... 57 Improvement Study of Wet Nitrocellulose Membranes Using Optical Reflectometry Hariyadi Soetedjo ............................................................................................................................... 69 Use of Balance Calibration Certificate to Calculate the Errors of Indication and Measurement Uncertainty in Mass Determinations Performed in Medical Laboratories Adriana Vâlcu ..................................................................................................................................... 76 Improved Web-based Power Quality Monitoring Instrument I. Adam, A. Mohamed and H. Sanusi ................................................................................................. 89 Design and Fabrication of a Soil Moisture Meter Using Thermal Conductivity Properties of Soil Subir Das, Biplab Bag, T. S. Sarkar, Nisher Ahmed, B. Chakrabrty .................................................. 100 Numerical Study of Mechanical Stirring in Case of Yield Stress Fluid with Circular Anchor Impeller Brahim Mebarki, Belkacem Draoui, Lakhdar Rahmani, Mohamed Bouanini, Mebrouk Rebhi, El hadj Benachour .............................................................................................................................. 108 Computer Vision Based Smart Lane Departure warning System for Vehicle Dynamics Control Ambarish G. Mohapatra ..................................................................................................................... 122

Simple Implementation of an Electronic Tongue for Taste Assessments of Food and Beverage Products Abdul Hallis Abdul Aziz, Ali Yeon Md. Shakaff, Rohani Farook, Abdul Hamid Adom, Mohd Noor Ahmad and Nor Idayu Mahat........................................................................................... 136 Aluminum-Selective Electrode Based on (1E,2E)-N1,N2- dihydroxy )-N1,N2- bis (4-hydroxy phenyl) Oxalimidamide as a Neutral Carrier Aghaie M., Esfandyar Baghdar, Fekri Lari F., Ali Kakanejadifard, Aghaie H. .................................... 151

Authors are encouraged to submit article in MS Word (doc) and Acrobat (pdf) formats by e-mail: [email protected] Please visit journal’s webpage with preparation instructions: http://www.sensorsportal.com/HTML/DIGEST/Submition.htm

International Frequency Sensor Association (IFSA).

Sensors & Transducers Journal, Vol. 132, Issue 9, September 2011, pp. 57-68

57

SSSeeennnsssooorrrsss &&& TTTrrraaannnsssddduuuccceeerrrsss

ISSN 1726-5479© 2011 by IFSA

http://www.sensorsportal.com

Modeling and Simulation of Wet Gas Flow in Venturi Flow Meter

1Hossein SERAJ, 2Mohd Fuaad RAHMAT, 3Marzuki KHALED,

4Rubiyah YUSOF and 5Iliya Tizhe THUKU 1, 3, 4Center for Artificial Intelligence and Robotics (CAIRO)

Universiti Teknologi Malaysia International Campus Jalan Semarak, 54100 Kuala Lumpur Malaysia

2, 5Control and Instrumentation Engineering Department, Faculty of Electrical Engineering, Universiti Teknologi Malaysia Johor Bahru, 81310 Skudai, Malaysia

E-mail: [email protected], [email protected], [email protected], [email protected], [email protected]

Received: 2 August 2011 /Accepted: 19 September 2011 /Published: 27 September 2011

Abstract: Wet gas which is a gas contains liquid, is encountered in various industrial applications such as oil and gas, power generation and mining plants. Measuring wet gas flow rate is required in many of these applications. Venturi flow meters are frequently used for wet gas flow measurement. This paper describes modeling and computer simulation of wet gas flow in the Venturi flow meters. The model used in this paper is based on an annular flow pattern. In this flow pattern, the gas is travelling in the middle of the pipe and the liquid is travelling along the pipe wall. In addition, it is assumed that some liquid droplets are entrained in the gas core. Then Simulink module of Matlab software has been used to simulate this model. This simulation has been used to compare various methods for correcting over-reading of Bernoulli formula when the same is used to measure wet gas flow rate in Venturi flow meter. By comparing the results obtained from simulation of these correction methods, it was found that some of these correction methods such as De Leeuw method are performing better than the others. Copyright © 2011 IFSA. Keywords: Wet gas, Venturi flow meter, Measurement, Flow measurement, Modeling, Simulation.

Sensors & Transducers Journal, Vol. 132, Issue 9, September 2011, pp. 57-68

58

1. Introduction Calvert has provided the first model for prediction of pressure drop across Venturi [1, 2] when wet gas is passing through it. In this model, it was assumed that all the liquid is travelling in the form of droplets. Calvert has also assumed that these droplets are accelerated by gas movement and they reach the gas velocity at the end of Venturi throat. In this model, there is no liquid film along the pipe wall. As per this model, the pressure drop across Venturi (between the inlet and throat) is as follow:

2

1000 gtG

LL UQ

QP

(1)

In this model, gtU is gas velocity at the end of Venturi throat. L is liquid density and GL QQ is the

volumetric ratio of liquid to gas. Yung et al. has derived another model similar to Calvert model [1, 3]. In this model, it is assumed that the droplet reach gas velocity at the end of the Venturi throat. Yung has introduced a dimensionless parameter, β, in his model as follow:

2gt

G

LL U

Q

QP (2)

Boll has also derived a new model for two phase flow in Venturi [4]. This model is the first model which has the form of differential equation. This model can also be used for the entire length of the Venturi (including convergent, throat and divergent sections). Also acceleration and deceleration of gas and liquid droplets is considered in this model. In his model, travelling of the liquid along the pipe wall has also been considered. Boll model is show below:

dxD

fU

Q

QdUU

Q

QdUU

dp

eq

gs

G

L

G

Ldgs

G

L

G

Lgsgs

G

2

1

(3)

2. Modeling Wet Gas Flow in Venturi The model used in this paper for simulation of wet gas flow in Venturi is obtained from the work done by Werven and Azzopardi [5] . In this model, it is assumed that wet gas has annular flow pattern. In this flow pattern, the gas is travelling in the middle of the pipe and the liquid is travelling along the pipe wall. We refer to the liquid travelling along the pipe wall as liquid film hereafter. Also the gas section in the middle of pipeline is called gas core. In this model, it is also assumed that in addition to the liquid film, some liquid droplets are also present in the gas core. These liquid droplets are generated from entrainment of some liquid from the liquid film into the gas core. At the same time, some of liquid droplets are returning to the liquid film (deposition). The velocity of the gas at each

section of the pipe is defined by U . Mass conservation is used to derive the gas velocity as follow:

A

WU

G

G

(4)

Sensors & Transducers Journal, Vol. 132, Issue 9, September 2011, pp. 57-68

59

0

dx

dWG

(5)

As the gas core has higher speed comparing to liquid film, therefore some portion of liquid is gradually entrained from liquid film into gas core in different section of the pipe. At each section of the pipe, depending on the condition at that section, a group of droplets is generated and this group has a specific droplet size. After entrainment, these droplets are getting accelerated by the gas core. Some droplets are also deposited in the liquid film along the pipeline. The velocity of the liquid droplets in each group (generated at a section of the pipe) is changed as per following relation:

Di

DiDi

L

GDi

DiDi d

UUUUC

dx

dUU

4

3

(6)

The diameter of the droplet is calculated as follow:

GL

LEGTDi W

W

Wed

5.34.15

58.0

(7)

In which: gLT (8)

and TLUWe 2

(9)

DiC is the drag coefficient between gas and liquid droplets defined as follow:

1000Re

1000Re

44.0

Re15.01Re

24 687.0

Di

DiDiDiDiC

(10)

In this formula, DiRe is droplet Reynolds No. calculated as follow:

G

DDG

Diii

dUU

Re

(11)

Some droplets of each group are joining the liquid film as they move along the Venturi. If we define the deposition rate of droplets by D , then this can be calculated using following formula: CkD D (12)

In this formula, C is mass concentration of droplets defined by:

Sensors & Transducers Journal, Vol. 132, Issue 9, September 2011, pp. 57-68

60

n

i D

LE

i

i

AU

WC

1

(13)

In above relation, Dk is mass transfer coefficient. The rate of change of mass flow rate of an existing droplet group can be calculated using following formula:

LE

LELE

W

WdD

dx

dWii

(14)

Also some new droplets are generated at each section of the venturi. These new droplets are generated from entrainment of some droplets from liquid film to the gas core. If we define the rate of entrainment per unit area by E, then the same can be calculated as follow:

Ed CkE

(15)

Then we can estimate the change of mass flow rate of newly generated droplets as follow:

dEdx

dWiLE

(16)

Droplet size of the newly generated droplet can be estimated using relation (7). Also at the intersection point between the convergent section of the Venturi and the throat area, some liquid is entrained from liquid film to the gas core. This entrainment is in addition of the normal entrainment to gas core. This additional entrainment happens due to the tendency of liquid film to keep its momentum at the sharp edge between convergent and throat sections. The amount of entrainment at throat section can be calculated using following relation: 34.0

063.11

We

WeE c

F

(17)

The rate of change of the liquid film can also be estimated from below relation. The same is obtained from mass conservation of the liquid in the pipe.

EDddx

dWLF

(18)

Also the liquid film thickness is defined by m. In order to be able to estimate the liquid film thickness, m, we need to define the shear stress at the interface between the liquid film and the gas core as follow:

2

2

1GChGii UCf

(19)

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61

In above relation, if is the interfacial friction factor defined as follow:

d

mff GCi 3601

(20)

In relation (19), GCU is the velocity of the gas and droplet in the gas core. The same can be computed as per following relation:

L

LE

G

GGC A

W

A

WU

(21)

Also hC used in relation (19) is estimated using following relation:

GC

LEh AU

WC

(22)

Also GCf used in relation (19) is defined as below:

25.0Re

079.0

GCGCf

(23)

GCRe is Reynolds number of the gas core defined as follow:

G

LEGGC A

dWW

Re

(24)

The film thickness, m, can be estimated using below relation:

i

LFdx

dpd

m

3

4

(25)

In above relation, LFdx

dp

is the frictional pressure gradient if the liquid fill the whole cross section of Venturi and travel with the speed of liquid film. Then it can be defined as follow:

22LFLLF

LF

Ufddx

dp

(26)

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62

LFf is the liquid-film friction factor which depends on the liquid film Reynolds number and defined as follow:

8000Re200

8000Re

200Re

001069.0Reln

38.143Re

079.0Re

16

5.4

25.0

LF

LF

LF

LF

LF

LF

LFf

(27)

In above relation, LFRe is the Reynolds Number of liquid film defined as:

L

LFLF

dG

Re

(28)

In which LFG is the mass flux of the liquid film defined as:

A

WG LF

LF

(29)

Finally the rate of change of the pressure in the pipe can be estimated as follow:

ddx

dU

A

W

dx

dU

A

W

dx

dp iDn

i

LEG ii4

1

(30)

In this relation, the pressure drop across Venturi has been attributed to the pressure drops produced due to acceleration of gas, pressure drop due to acceleration of droplets and pressure drop due to friction factor between liquid film and gas core. 3. Simulating of Wet Gas Flow in Venturi using Matlab and Simulink Software For modeling wet gas flow through venturi, Matlab software has been selected. Matlab is a powerful software for mathematical calculations. Matlab includes several modules and each module incorporates the functions related to a specific branch of science such as fuzzy logic, signal processing, aerospace, finance, biology, communication, etc. One of these modules is Simulink which provides a graphic means for modeling. Simulink is designed for simulating different dynamic models. Model is a set of differential equations or state space equations which can be used to predict the future behaviour of a system if the initial condition of that system is known. Simulation in this case means solving differential equations or state space equations in a certain time period by knowing the initial state of the parameters. For example, Simulink can predict the location of a pendulum (a metal ball hanged to the rope) in a time period if we have modeled all governing equations which describe the motion of the pendulum and if we enter the initial location of the pendulum.

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In order to simulate passage of wet gas fluid through Venturi, above mentioned relations (4 to 30) have been modeled in Simulink environment. It should be noted that in this study, the inlet, convergent section and throat section of Venturi have been modeled. This is due to the fact that in flow measurement using Venturi, the differential pressure between the inlet and throat section of Venturi is measured. After modeling all these relations in Simulink, this model is simulated using Rung-Kutta algorithm. This algorithm is using a variable step approach in which time steps for simulation is variable. The time step depends on the rate of change of the parameters. When there are fast changes in the parameters, then the simulation steps are decreased by the software to have more accurate results. When the rate of change of the parameters is slow, then the software increases the simulation steps to get some feeling of the output of simulation, pressure change along the venturi is shown in Fig. 1 for dry and wet gas cases. In this figure, the solid line shows pressure profile along the Venturi in case of dry gas. In the divergent section of the pipe, there is a sharp decrease in pressure profile. The same occurs due to increase of gas velocity and subsequent decrease of gas pressure as per Bernoulli formula. The pressure profile in case of wet gas is also shown with dotted line.

Fig. 1. Pressure profile along the pipeline in two different liquid loading.

It can be seen that although the gas flow rate is equal in both dry gas and wet gas cases, the pressure drop in case of wet gas is more. This is due to existence of liquid droplets in the wet gas and the fact that these liquid droplets create more pressure drop in order to get accelerated by gas. In Fig. 2, the simplified block diagram for simulating the passage of wet gas through venturi has been depicted.

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Fig. 2. Block diagram for modeling passage of wet gas through Venturi. 4. Verifying Different Models for Correcting the Over-reading in Wet Gas Venturi

Flow Meters The simulated model of wet gas flow through venturi can be used to verify the available methods for correcting the measurement obtained from applying Bernoulli formula to Venturi flow meter in case of wet gas. Bernoulli formula is primarily used for measuring the pure gas flow rate using Venturi flow meter. When wet gas is passing through Venturi, the reading obtained from Bernoulli formula is more than the actual flow rates. For correcting the over-reading obtained from Bernoulli formula, several methods are derived which take into account the presence of the liquid in wet gas [6, 7]. Available correction methods are multiplying the reading of Bernoulli formula with different correction factors. These correction factors are typically functions of gas quality, Lokart_Martinelli No, gas and liquid density and gas Froude number [6]. In order to compare these correction methods, they have also been modeled in Matlab Simulink software. In actual flow meters, there is normally another measurement device in addition to Venturi [6]. This additional measurement device can be radioactive densitometer, microwave sensors, etc. and is used to measure a parameter which indicates the ratio between gas and liquid volumes in the pipe (GVF). For example in radioactive densitometer, the density of the wet gas which itself depends of the percentage of gas and liquid in the pipe, is measured. Then using this second measurement, the correction factor is calculated. Also in actual flow meters, typically the line pressure and line temperature are measured. The line pressure and line temperature is also used to identify the density of the gas in the pipeline. By knowing the correction factor and multiplying the same with the flow measurement obtained from Bernoulli formula, the corrected gas flow rate in the wet gas application is derived. In this study, different correction methods such as Murdock [8], Chisholm [9], De Leeuw [10], Lim [8] and Steve [11] have been compared. For comparing these correction methods, first the reading of Bernoulli formula is derived. Then the correction factor obtained from each of these correction methods is calculated in the Simulink. Finally the estimated gas flow rate from each of these correction methods is derived (by multiplying the correction factor with the Bernoulli reading). In Fig. 3, the flow measurements obtained from these correction methods are plotted against the actual gas flow rate in different GVF values. Also the reading obtained from Bernoulli formula has been shown in above figure. It can be seen that the reading obtained from Bernoulli formula is the same as actual gas flow rate when the GVF =1 (100 % gas). As the concentration of liquid is increased in the wet gas (GVF value is decreased), the difference between reading obtained from Bernoulli formula and the actual gas flow rate is increased. It can also be seen in above figure that after applying different correction methods, the reading obtained from these methods are approaching toward the actual gas flow rate. It can be seen that De

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Leeuw method perform best in high GVF values because it estimates the nearest value to the actual flow rate. In lower GVF values, Lim method is performing better.

Fig. 3. Flow rates measured by different correction methods in various GVF values.

Pipeline pressure is also varying in different applications due to various reasons such as different gas reservoir pressure, different production strategy, etc. As the upstream pressure will directly affect the gas density and since the gas density is used for calculating the gas flow rate in Bernoulli formula, therefore it is interesting to know that how different correction methods react to changes in pipeline pressure. In Fig. 4, the measurements obtained from various correction methods are plotted in different pipeline pressures. It can be seen from this figure that some correction method such as Steven method works better in lower pipeline pressures while other correction methods such as De Leeuw, Lim and Chisholm give better results in higher pipeline pressures. In actual conditions, density of liquid in wet gas changes due to variation in condensate composition, salinity, etc. So it would be of interest if we know the dependency of different correction methods to variation in liquid density. In Fig.5, the reading obtained from different correction methods is depicted in various liquid densities. Here also, De Leeuw method performs better than the other methods. Similarly, in Fig. 6, different correction methods have been compared in different gas densities. It should be mentioned that in some of these correction methods (e.g. Steven, Lim, De Leeuw), density of the gas and liquid are needed to calculate the correction factor. Therefore for applying these correction methods, we need another measurement facility in addition to Venturi meter to measure the density of gas and liquid. For example, in some applications, radioactive densitometer is used to measure the liquid and gas density [6].

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Fig. 4. Flow rates measured by different correction methods in various pipeline pressures.

Fig. 5. Flow rates measured by different correction methods in various liquid densities. 5. Conclusion In this paper, the model for describing wet gas flow through Venturi has been elaborated. Then this differential equation model has been simulated using Simulink software. Finally this simulation is used

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to compare different methods which are commonly used for correcting the reading obtained from Bernoulli formula. This comparison has shown how each correction method performs in various conditions where for example gas density, liquid density, GVF or pipeline pressure is changing. It was found that some of the correction methods such as De Leeuw method perform better than the others.

Fig. 6. Flow rates measured by different correction methods in various gas densities. References [1]. A. Sun, Modeling Gas-Liquid Flow in Venturi Scrubbers a High Pressure, Transaction of Institution of

Chemical Engineers, Vol. 81, B, 2003, pp. 250-256. [2]. Calvert, Venturi and other atomizing scrubbers efficiency and pressure drop, Journal of American Institute

of Chemical Engineers, Vol. 16, 1970, pp. 392-396. [3]. Yung, Pressure Loss in Venturi Scrubbers, Journal of Air Control Association, Vol. 27, 1977, pp. 348-350. [4]. Boll, Particle Collection and Pressure Drop in Venturi Scrubbers, Journal of Industrial and Engineering

Chemistry Fundamentals, Vol. 12, 1973, pp. 40-50. [5]. O. Van Werven, Azzopardi, Modeling Wet-Gas Annular/ Dispersed Flow Through a Venturi AIChE

Journal, Vol. 49, 6, 2003, pp. 1383-1391. [6]. R. Hossein, S. Marzuki, F. Rahmat. Review of Wet Gas Flow Measurement using Venturi Tubes and Radio

Active Materials, International Journal on Smart Sensing and Intelligent Systems, Vol. 3, 4, 2010, pp. 672-689.

[7]. Z. Fang, Jin, A comparison of correlations used for Venturi wet gas metering in oil and gas industry. Journal of Petroleum Science and Engineering, Vol. 57, 2006, pp. 247–256.

[8]. F. Dong, F. S. Z., W Li, C Tan, Comparison of differential pressure model based on flow regime for gas/liquid two-phase flow, Journal of Physics, Vol. 147, 2009, pp. 1-9.

[9]. Chisholm, Research note: two phase flow through sharp-edged orifices, Journal of Mechanical Engineering Science, Vol. 19, 3, 1975, pp. 128-130.

[10]. De Leeuw, Wet Gas Flow Measurement Using a Combination of Venturi Meter and a Tracer Technique, in Proceeding of the 12th North sea Flow Measurement Workshop, 1994.

[11]. R. N. Steven, Wet gas metering with a horizontally mounted Venturi meter, Journal of Flow Measurement and Instrumentation, Vol. 12, 2002, pp. 361–372.

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