si detector

8/9/2019 Si Detector

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Si-Detector Developments at

BARC

Dr. S.K.Kataria

Electronics Division,

BARC, Mumbai


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Collaborators

M.D. Ghodaon!ar, Anita "op!ar, M.#. Di$it, %.B. Chandratre, A.Das,%i&a' Mishra, %.D. Srivastava, R.%. Shri!antaiah, Achar'ulu, R.K.

Choudhari, Benc' (ohn,A.K. Mohant'

BARC

) *.%. Ananda, Subash Chandran, +rabha!ararao, .Shan!aranara'ana

BEL

) .+. adha/an, G.S. %irdi

CEERI

) R.K. Shivpuri, Ashutosh Bharad/a&, Kirti Ran&an0

DU


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+lan o1 the "al!

) Development o1 the CMS presho/er

silicon strip detector ) Silicon Dri1t Detectors

) Si-Detector Readout Electronics


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Compact Muon SolenoidCMS


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+resho/er Disc23.45m

MB "#+E3

MB "#+E6

MB "#+E7

MB "#+E8K Chip

"otal 734 $ 4 9 45: Mother boards


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Advantages of silicon detectors:

• ;ast response o1 the order o1 1e/ ns

• *ih level o1 sementation possible- strips,

microstrips, pi$els,etc

• *ih ener' and position resolution

• Room temp operation possible


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Applications o1 Silicon Detectors0Detection o1 radiation - α, β, γ , protons, neutrons,

chared particles, photons

• Silicon detectors with multielement geometries of strips microstrips pi!els etc

- +h'sics e$periments such as that at CER, uclear Science e$perimentsin our countr'

- Astronom' ? lo/ ener' @-ra's

- Medical imain ?pi$el detectors

• Single element detectors

Small area diodes " area #$%&'' mm#

- +ersonal dosimeters area monitors 1or -radiation

- eutron dose measurement usin boron coatinthin 1oil

- o/ ener' @-ra' spectroscop' /ith preamp ? lo/ noise

at 788C ? F:8Ke% /ith 1e/ 788 e% resolution

- *ih resolution α-spectroscop'- Chared particle detection

Large area diodes &''%('' mm#

- Detection o1 lo/ activit' radiation such as #() +u in air

• Silicon photodiode*scintillator s+stem


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%arious t'pes o1 silicon strip detectors used

1or hih ener' ph'sics e$periments >

other applications

) Sinle sided and double sided Strip detectors ? DC coupled,3D +osition sensin

) +i$el detectors ?suitable 1or imain applications) Silicon microstrip detectors ? AC coupled, sinle or double

sided

) Silicon dri1t detectors ? hih ener' and position resolution,suitable 1or imain applications

) Monolithic active pi$el detectors

) Sinle element detectors /ith hih ener' resolutionlaresensitive area


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Silicon stripmicrostrip detector

? SS, DC coupled


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• +rotot'pe Development phase

?CEER= and BE

• +reproduction ?BE• +roduction ?BE

=mportant activities involved0

• Detector desin and 1abrication

• Detector uali1ication

• Micro module assembl'

C,S -reshower Silicon Strip Detector

Development

."hese detectors /ill be used as the presho/er

detectors 1or photons in the CMS at CER.


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+rotot'pe "echnolo'

Development

• 7:-strip silicon detector developed at CEER= on a3H a1er

strips o1 eometr' 38$7.:I mm3 enclosed in three +J uard-rins

• 63-strip silicon detector o1 eometr' :8$:8 mm3 developed at BEstrips o1 eometr' :8$7.:5 mm3 enclosed in seven +J uard-rins

• += diode detectors o1 various areas 6$6 mm3 78$78 mm3 developed at BE alon /ith stripdetector

8 diodes enclosed in t/o uard rins


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Detector speci1ications and Detector desin

) ElectricalBrea!do/n voltae 1or all strips L9 688%I88%

"otal current o1 all strips 9F I A at 1ull depletion voltae ?%;D and

F9 78 A at 7I8J%;D

Ma$imum 7 strip /ith lea!ae current L 7 A at %;D > L I A at %;DJ7I8%

) Geometrical

enth :6.8 J- 8.7 mm idth :6.8 J8.8, -8.7 mm

Detector speci1ications are ver' strinent as these are to be operated in a

hih radiation bac!round o1 neutrons ? 3$78 74 cm3 > amma

? 78Mrad 1or a lon period o1 ten 'ears


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Scanned picture of BEL andScanned picture of BEL and

CEERI Detectors ( Prototype)CEERI Detectors ( Prototype)


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CharacteriNation o1 the strip detector

) +robe-&is to ma!e contact to the 63 stripssimultaneousl'

) Simulaneous measurement o1 strip current o1 63

strips ? =%

) Simulaneous measurement o1 strip capacitance o1 63strips ? C%

+robe-&is, measurement setups /ere developed b'

BARC.

"estin 1acilit' has been setup at BE 1or

uali1ication o1 detectors as per the CER

speci1ications


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) Aron implantation atBac! plane

) Sacri1icial $ide Gro/n


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Bac/%-lane 0hmic Side -rocessing

1echnolog+ Single step implantation ) Ener' o1 the ion-beam0 O8 Ke%

) Dose0 2E&$ ions*cm#

) Annealin0 68 min, 5I8 PC in 3

Dou3le step implantation First Step:

) Ener' o1 the ion-beam0 778 Ke%

) Dose0 &E&$ ions*cm#

) Annealin0 78 min, 78I8 PC in 3 J 3 Second Step:

) Ener' o1 the ion-beam0 I8 Ke%

) Dose0 7E7: ionscm3

) Annealin0 68 min, 5I8 PC in 3


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=% and C% measurement s'stem developed

b' BARC


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Reverse =% characterstics o1 all 63 strips o1 a

detector ? production phase

1.00E-10

1.00E-09

1.00E-08

1.00E-07

1.00E-06

0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0

Bias Voltage (Volts)

R e v

e r s e c u r r e n t ( i c r o a ! " s )


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Capacitance vs %oltae Characterstics o1 all 63 strips

o1 a detector ? +roduction phase

3.00E-11

5.00E-11

7.00E-11

9.00E-11

1.10E-10

1.30E-10

1.50E-10

1.70E-10

0.0 50.0 100.0 150.0 200.0 250.0

Bias Voltage (Volts)

# a " a c i t a n c e ( $

a r a % s )


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Brea&%o'n Voltage (or )oo% *etectors

0

100

200

300

400

500

600

+ast t,ree %igits o( t,e Barco%e

B r e a & % o ' n V o l t a g e ( V

$ull *e"letion Voltage (or )oo% *etectors

105

110

115

120

125


$ u l l % e " l e

t i o n

V o l t a g e


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#urrent at $ull %e"letion Voltage (or )oo% *etectors

0.01

0.1

1


#urrent at 300 Volts (or )oo% *etectors

0.1

1

10



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lengt, o( t,e %etectors

62.8

62.9

63

63.1

63.2

last t,ree %igits o( -arco%e

l e n g t ,

(

'i%t, o( t,e %etectors

62.8

62.9

63

63.1

63.2

1

4

5

1

4

9

1

5

3

1

5

7

1

6

1

1

6

5

1

6

9

1

7

3

1

7

7

1

8

1

1

8

5

1

8

9

1

9

3

last t,ree %igits o( -arco%e

'

i % t ,

( !


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Detector Micromodule


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4a3rication of Detectors of

modified geometr+ .5( 6 5( mm#

7

Composite diagram for all the layers of Mask2

I !hara!teristi!s of 32 strips a 63 " 63 mm 2

dete!tor fa#ri!ated at $%&


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Simulation Studies

'opi(g )rofile after ea!h of thermal treatme(t*he !ross+se!tio( of the sim,lated de-i!e sho.i(g

differe(t layers a(d !o(to,r for the /,(!tio( depth


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Silicon Detectors /ith =nbuilt (;E"

Simulation Studies > Desin ) An e$tension o1 += diode development /or!

) ;abrication o1 (;E" alon /ith += diode detector avoidsstra' capacitances and micro phonic noise pic!ups

) SDD is based on the lateral chare transport scheme. "hesinal chare enerated b' radiation is collected b' asmall area anode ?small capacitanceQ 8.7p;. "hecapacitance o1 the detector is independent o1 the detectorarea

) "hese detectors can be cooled do/n to -38PC that /ouldive ener' resolution o1 Q7O8 e% ? += diodes and Q7I8e% ?SDD


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Radial Cross Section o1 SDD >

(;E"


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-(;E" Characteristics

0 2 6 8 10 12 1 16

0.0

1.0/10-3

2.0/10-3

3.0/10-3

.0/10-3

5.0/10-3

*rain #,aracteristics

V" 5 V

R*

1

+5

+4

+3

+2

+1

0

3 * ( 4 ! "

)

V*1

(V)

-10 -8 -6 - -2 0

0.0

1.0/10-3

2.0/10-3

3.0/10-3

.0/10-3

5.0/10-3

3 * ( 4 !

" )

V)1 (V)

*ra(sfer Chara!teristi!s

g!1.1 !


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Silicon Drift Detector with Integrated

4ront%end electronics ) o/ noise operation /ith lare

active area

) Ener' and position sensincapabilit'

) *ih ener' resolution27I8e%

) *ih position resolution 2 77µm

) *ih count rate capabilit' 3e:cpscm3

) Applications o1 Silicon dri1tdetectors

) @-ra' > γ -ra' Spectroscop') Simulation studies 1or SDD and

inbuilt (;E" completed Analog 8%ra+ Ac9uisitionS+stem .A8AS7


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DETECTOR(S)

CMOS ASIC from SCL Concept to CHIP

OCTAL Charge Preamp OCTPREM

8 CHANNEL SILICON STRIP PULSE

PROCESSOR. SPAIR

FRONT END DOSIMETER ASIC. CODA

8 CHANNEL CURRENT PULSE PREAMPLIFIER MICON

4ull custom designs


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Bloc! Diaram TS+A=RH


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,IC0

Error amp

re1

in

= to %>S*A+ER

Bu11er

out

bias

4IC0

KEY FEATURES

&%% C%7* CM)%7*I7

I'%& 9 ))*I7& C:M$%;

%M; )M*

50 7 )%I7 *IM%1800 e M (oise

8 C:77%&


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) "he process technolo' 1or lare area silicon detectors has beensuccess1ull' developed and silicon strip detectors meetin all theelectrical and technoloical speci1ications 1or itUs uali1ication as

presho/er sensors have been produced

) "he lea!ae current in detectors is around 3-I nAcm3 and brea!do/nvoltae is in e$cess o1 I88%

) "he approach o1 emplo'in etterin techniues durin 1abricationhas sustained the bul! e11ective carrier li1etime to hih value L 78 ms

) "he in&ection o1 carriers 1rom the bac! plane at 1ull depletion voltae/hich /as the ma&or problem 1or hih voltae operation o1 the

detectors has been e11ectivel' tac!led b' incorporatin doubleimplantation at bac! side so as to have thic!er and uni1orm nJ la'er

) the strip detectors that sho/ hih lea!ae current in strips can becomeusable detectors /ith one o1 the Guard Rins rounded

) Guardrin collects most o1 the sinal chare enerated close to oroutside o1 the active area avoidin the number o1 interactions in /hichimper1ect or incomplete chare collection /ould occur.

) Simulation studies 1or desinin Silicon Dri1t Detector /ith interated -(;E" have been done and results are presented


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+resho/er Readout Architecture

DDUDDU

- p t i c a l R e c e i v e

r s

;+GA

DS+

;ED Bus

Readout -ath

4EC ,odule

- p t o e l e c t r o n i c s

in!

Controller

processor

CK > "7

loic

""Cr$

""Cr$

""Cvimodule

4ront End Readout ASICs4ront End Readout ASICs

4ront End Control ASICs4ront End Control ASICs

Control -ath

Cl! %7=3C

DC<=

%

=3CCC


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DD< ;unctional Reuirements

) ptical to electrical conversion > de-serialiNation o1incomin data streams

) =nterit' veri1ication o1 incomin data pac!etsevent

1raments) Data re1ormattin

) Data reduction

) DD< event 1ormation

) "ransmission o1 DD< events to the lobal DAV throuh theS-in!:4 inter1ace

) "ransmission o1 sp'in events to the local DAV throuh%ME inter1ace


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DD< =nput Data ;ormat


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Data +rocessin in DD<

) +edestal Subtraction

) Common mode noise Subtraction

) "hreshold Comparison

)S'nchroniNation Chec! ) Deconvolution α 9 Y 7 v8

β 9 Y 7 v7 J Y 3 v8

γ 9 Y 7 v3 J Y 3 v7 J Y 6 v8

) Chare E$traction Q 9 W 7 v7 J W 3 v3

) Data concentration and output 1ormattin


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DD< utput Data ;ormat

Header

WBE0 Bein 1 Event 4 bits

W;% ;rmat %ersion 4 bits

W%7Wid "rier umber 34 bits

WB@Wid Bunch umber 73 bits

WSourceWid Source =d 73 bits

WEvtWt' Event "'pe 4 bits

Trailer

WEvtWlth Event siNe in :4 bit /ords 34 bits

WEvtWstat Event status O bits

=nterit' CRC 7: bits

Data Concentrator Card


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Data Concentrator Card

?DCC

4-


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DD< Architecture in DCC

i;=; n;=;Data

+rocessor

5 $ %erte$3+ro

Data

Concentrator

%ME:4

=nter1ace ;=;

Multiple$er S-in!-:4

=nter1ace

:O

:O7

o;=;

7

i;=; n;=;Data

+rocessor i;=; n;=;Data






+rocessor

O $

lin!s

"o CMS

DAV

;rom

SMB

%ME:4 bus

si detector

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