sige meeting, geneva 1 fast silicon sensors. sige meeting, geneva fast sensors 2 n-well p-substrate...

SiGe Meeting, Geneva 1

Fast Silicon Sensors

SiGe Meeting, Geneva

• Fast sensors

2

N-well

P-substrate

Time


• Fast sensors

3

NMOS PMOSN-well

P-substrate

Time


• Fast sensors

4

Time

20-40ps

500ps

InformationT1,A1T2,A2T3,A3


• Fast sensors

5

N-well

P-substrate

Time

NPN


• Fast sensors

6

Time

~60ps

InformationT1


• Fast sensors

7

N-well

P-substrate

Time

VDD+~2V

GND


• Fast sensors

8

TimeTime

~60ps


AMS

• ams 0.35µm SiGe-BiCMOS process is based on the proven 0.35µm mixed-signal CMOS process and includes an additional high performance analog oriented SiGe HBT transistor module.

• This advanced RF-process offers high-speed HBT-transistors with excellent analog performance such as high fmax and low noise as well as complementary MOS transistors with the option of 5V I/O CMOS transistors.

• Accurately modeled high linear precision capacitors are available as Poly1 / Poly2 or Metal2 / Metal3 versions.

• The modular integration of linear resistors, high quality varactors and thick Metal 4 spiral inductors makes this process ideally suitable for a wide range of high performance RF applications up to 20 Gb/s.

9


• Fast sensors

10


• Fast sensors

11


• Fast sensors

12


• Fast sensors

13

N-well

P-substrate

Time

NPN

+50V

0V


• …

14


IHP

• A high-performance 0.25 µm technology with npn-HBTs up to fT/fmax= 180/220 GHz.• SG25H3:• A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (fT/fmax= 110 GHz/180

GHz) to higher breakdown voltages up to 7 V.• SGB25V:• A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V. • SG13S:• A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/300 GHz, with 3.3 V I/O CMOS and

1.2 V logic CMOS.• SG13G2:• A 0.13 µm BiCMOS technologies with same device portfolio as SG13S but much higher bipolar performance with

fT/fmax = 300/500 GHz• The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 µm, TM2: 3 µm). • The following Modules are available• GD:• Additional integrated complementary RF LDMOS devices with nLDMOS up to 22 V, pLDMOS up to -16 V

breakdown voltage and an • isolated nLDMOS device. (available in SGB25V)• H3P:• Additional pnp-HBTs with fT/fmax = 90/120 GHz for complementary bipolar applications. (available in SG25H3)• RF-MEMS switch:• Additional capacitive MEMS switch devices for frequencies between 30 GHz to 100 GHz. (available in SG25H1

and SG25H3 technology) • LBE:• The Localized Backside Etching module is offered to remove silicon locally to improve passive performance.

(available in all technologies)

15


PET

S IP M s

R eadou t ch ip

F P G A

U S B C h ipSupply vo ltages

U S B C ab le

P C B 1

P C B 2

P C B 3

P C B 4

SIP M signa ls

D ig ita l output signa ls – tim e & energy Contro l

B ias vo ltages

D ig ita l output signa ls

S c in tilla to rs

• PET – Detector for PET/MR

n10-8s


Signal

• Signal

I ~ nPh1,2

Ph3,4

Ph4

Ph_n

Schwelle

1mV~10ns

~100ps


Readout channel

• Readout channel

IR0

IR1

IR2

IRn

TSR2

TSR1

TSR0

Threshold Hit

Start Stop

Input

Comparator

Integrator

Start ADC

Fine/Coarse TSDO(TS)

Comp-

S

R

CNT DAC

DAC

CTSn

CTS2

CTS1

CTS0

FTS3

FTS2

FTS1

RCk

Ck

CCk

DO(I)

RCk

Hit

ClearHit

+

GTh Ld Ld

ConfInComparator Hit Logic Integrator TS Latch CMOS DACs

FTS0FTS0

FTS1

FTS0

FTS1

FTS0

FTS2

FTS1

FTS0

FTS2

FTS3

FTS1

FTS0

FTS2

FTS3

CTS0

CTSn

CTS2

CTS1

CTS0

FTS3

FTS2

FTS1

FTS0

345

CompComp

IR0

IR1

IR2

IRn

TSR2

TSR1

TSR0

IR0

IR1

IR2

IRn

TSR2

TSR1

TSR0

IThn

ITh2

ITh1

ITh0

CThn

CTh0


TC5 A5A4A3A2A1

TC4TC3

ThN

ThP

TC2TC1

(B) CM FB

(A) Diff. FB

(C) Preamplifier

AC (D) DCL buffer

DCL

VCM

VCM

In

Out

Trans-conductor (TCi)

2IFB

2I0Itune Itune

Amplifier stage (Ai)M2 M2*

Amplifier


IR0

IR1

IR2

IRn

TSR2

TSR1

TSR0

Threshold Hit

Start Stop

Input

Comparator

Integrator

Start ADC

Fine/Coarse TSDO(TS)

Comp-

S

R

PIn

Ld

SIn

SOutCkPInQ

CNT

SIn

SOutCk

Q

DAC

DAC

Ld

CTSn

CTS2

CTS1

CTS0

FTS3

FTS2

FTS1

RCk

Ck

CCk

DO(I)

RCk

Hit

ClearHit

+

GTh Ld Ld

ConfInComparator Hit Logic Integrator TS Latch CMOS DACs

FTS0FTS0

FTS1

FTS0

FTS1

FTS0

FTS2

FTS1

FTS0

FTS2

FTS3

FTS1

FTS0

FTS2

FTS3

CTS0

CTSn

CTS2

CTS1

CTS0

FTS3

FTS2

FTS1

FTS0

345

CompComp

IR0

IR1

IR2

IRn

TSR2

TSR1

TSR0

IR0

IR1

IR2

IRn

TSR2

TSR1

TSR0

IThn

ITh2

ITh1

ITh0

CThn

CTh0

Readout

sige meeting, geneva 1 fast silicon sensors. sige meeting, geneva fast sensors 2 n-well p-substrate...

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