MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 4 0 2

Silicide Thin F i l m s -Fabrication, Properties,

and Applications

Symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

EDITORS:

Raymond T. Tung Bell Laboratories , Lucent Technologies

Murray Hill, New Jersey, U.S.A.

Karen Maex IMEC

Leuven, Belgium

Paul W. Pellegrini Hanscom Air Force Base

Bedford, Massachusetts, U.S.A.

Leslie H. Allen University of Illinois, Urbana

Urbana, Illinois, U.S.A.

M1RISI MATERIALS RESEARCH SOCIETY

PITTSBURGH. PENNSYLVANIA

CONTENTS

Preface xv

Materials Research Society Symposium Proceedings xvi

PART I: SUICIDE FUNDAMENTALS: ENERGETICS AND KINETICS

'Theoretical Considerations about Phase Growth and Phase Formation 3

F.M. d'tleurle

Study on the Phase Transition from Amorphous Phases to Crystalline TiSi2 15

ft. а. Пат and Нат-lhn Cho

Interface Stability of Ti(Sii.yGey)2 and Si].xGex Alloys 21 D.B. Aldrich, F.M. d'tleurle, D.E. Sayers, and R.J. Nemanich

Study on Ti-Si02 Reaction—Thermodynamic Approach 27 М.В.Л. Fontes, J.D.T. Cappochi, and J.С Acquadro

Stability Hierarchy of New Epitaxial Phases in CoSi2 33 Leo Miglio and Francesca Tavazza

'Diffusion Processes in Silicides: A Comparison between Bulk and Thin Film Phase Formation 39

Patrick Gas and Francois d'tleurle

Diffusion of Arsenic in Single Crystalline CoSi2 51 A. Pisch, J. Cardenes, B.G. Svensson, and C.S. Petersson

PART II: PROCESSING OF SILICIDE THIN FILMS

Process Windows of Nickel and Platinum Silicides in Deep Sub-Micron Regime 59

D-X. Xu, S.R. Das, J.P. McCaffrey, C.J. Peters, and L.E. Erickson

Formation and Relaxation of Ni(Au) Disilicide 65 D. Mangelinck, P. Gas, J.M. Gay, and B. Pichaud

*Post Titanium Suicide Processing 71 O. Grynkewich, V. Ilderem, M. Miller, and S. Ramaswami

Phase Transformation of Titanium Disilicide Induced by High-Temperature Sputtering 83

ft. Fujii, R.T. Tung, D.J. Eaglesham, ft. Kikuta, and T. Kikkawa

"Invited Paper

v

Ti-Salicide Improvement by Preamorphization for ULSI Applications 89

Chun-Cho Chen, Q.F. Wang, Franky Jonckx, Jyh-Shyang Jenq, and Haren Maex

Reduction of the C54-TiSi2 Phase Formation Temperature Using Metallic Impurities 95

R.W. Mann, L.A. Clevenger, Q.L. Miles, J.M.E. Harper, С Cabral, Jr., F.M. d'Heurle, T.A. Knotts, and D.W. Rakowski

Surface Nucleation and Template Growth of Ti Silicides 101 R.T. Tung

Investigation of TiN/TiSi2 Bilayer Thin Films on Si (100) Substrate 107

Y. Shor, J. Pel leg

Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Phase Transformation in Nitrogen Ambient 113

R.V. riagabushnam, S. Sharan, O. Sandhu, V.R. Rakesh, R.K. Singh, and P. Tiwari

Substrate Influence on the Formation of Titanium Suicide on Polycrystalline Silicon 119

Ana rieilde Rodrigues da Silva, Rogerio Furlan, and J.J. Santiago-Aviles

Formation of Titanium Suicide Strap Lines by the Deposition of a Double Layer of Amorphous Silicon-Titanium 125

Ana rieilde Rodrigues da Silva, Rogerio Furlan, and J.J. Santiago-Aviles

Characterization of TiB2/TiSi2 Bilayer Structure Deposited by Sputtering 131

G. Sade and J. Pelieg

Initial Stage of Titanium Suicide Formation on Si(l 11) Substrate 137

S. Shingubara, S. Takata, E. Takahashi, S. lionagata, H. Sakaue, and T. Takahagi

Titanium Silicidation Induced Point Defects in Si 143 S.B. Herner, H-J. Qrossmann, and U.S. Jones

Titanium Silicidation and Secondary Defect Annihilation in Ion Beam Processed SiGe Layers 149

K. Kyllesbech Larsen, F. La Via, S. Lombardo, V. Raineri, R.A. Donaton, and S.U. Campisano

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of CoAi Bilayers with Si<100> Substrates 155

J. Cardenes, S-L. Zhang, B.O. Svensson, and CS. Petersson

VI

Transient Phase Formation During the Growth of Epitaxial CoSi2 by Annealing of CoAi Bi-Layers on (100) Si 161

D.J. Miller, T.I. Selinder, and U.E. Qray

Defect Generation During Epitaxial Growth of CoSi2 on Miniature Sized (100) Si Substrate and its Effect on Electrical Properties 167

Jeong Soo Byun, Jeong Min Seon, Jin Won Park, tlyunsang Hwang, and Jae Jeong Kim

Ti-lnterlayer Mediated Epitaxy of CoSi2 with Ti Capping 173 К Т. Tung and F. Schrey

Phase Formation between Codeposited Co-Ta Thin Film and Single Crystal Silicon Substrate 179

O. Briskin, J. Pelleg, and M. Talianker

Reaction of Amorphous Silicon with Cobalt and Nickel Suicides before Disilicide Formation 185

Jer-shen Maa and Sheng Teng Hsu

Low Temperature Suicides for Poly-Silicon Thin Film Transistor Applications 191

O.T. Sarcona and M.K. Hatalis

PART III: ULSI ISSUES

"0.35 (im Technologies in Japan 199 Takamaro Kikkawa and Isami Sakai

A Low Temperature Single-Step RTA Process to Form Ultra-Thin CoSi2 for MOSFET Applications 209

Melanie J. Sherony, T.S. Sriram, Craig England, Aldo Pelillo, William С Harris, Stephen J. Miller, Steven A. Bill, Isabel Y. Yang, Andy Wei, and Dimitri A. Antoniadis

Application of Cobalt Salicide in Sub-Quarter Micron ULSI 215 G. Bai and A. Stivers

'Manufacturability Issues for Application of Silicides in 0.25 ц т CMOS Process and Beyond 221

Q.F. Wang, A. Lauwers, F. Jonckx, M. de Potter, Chun-Cho Chen, and K. Maex

"Process Modeling and Integration of the Salicide Process Module for Sub-Half Micron Technology 233

Pushkar P. Apte, Douglas A. Prinslow, Jorge A. Kittl, R. Scott List, and Gordon Pollack

Silicidation Strategy of Sub-0.1 ц т Junctions for Deep Submicron Devices 245

Jiunn-Yann Tsai, Carlton M. Osburn, and Steve L. Hsia

*lnvited Paper

VII

Stress in Silicon Due to the Formation of Self Aligned Poly-CoSi2 Lines Studied by Micro-Raman Spectroscopy 251

D.J. Howard, I. De Wolf, ti. Bender, and K. Maex

"In Situ Analysis of the Formation of Thin TiSi2 (<50 nm) Contacts in Submicron CMOS Structures During Rapid Thermal Annealing 257

L.A. Clevenger, C. Cabral, Jr., R.A. Roy, С Lavoie, R. Viswanathan, K.L. Saenger, J. Jordan-Sweet, G. Morales, K.L. Ludwig, Jr., and O.B. Stephenson

Kinetics of the C49 to C54 Phase Transformation in TiSi2 Thin Films on Deep-Sub-Micron Lines 269

J.A. Kittl, D.A. Prinslow, P.P. Apte, and M.P. Pas

A Kinetic Study of the C49 to C54 Conversion in TiSi2 Using Electrical Resistivity Measurements on Single Sub-Micron Lines 275

K.L. Saenger, C. Cabral, Jr., L.A. Clevenger, and R.A. Roy

PART IV: CVD SUICIDES

"Selective Titanium Silicide for Industrial Applications 283 D. Maury, J.L. Regolini, and P. Qayet

Selective TiSi2 Formation Using TiCI4(g), Si(s) and H2(g): A Study of the Mask Loading Phenomena 295

D.B. Gladden, O.A. Weintraub, and M.C. Öztürk

Tungsten Silicide Films Based on Dichlorosilane Chemistry for Sub 0.5 Micron Applications 301

Cengiz S. Ozkan and Mansour Moinpour

PART V: SEMICONDUCTING SUICIDES

"Properties and Perspectives of Semiconducting Transition Metal Silicides 307

ti. Lange

Phase Transformations in Layered Fe-Si Structures 319 M. Fanciulli, С Rosenblad, G. Weyer, ti. von Känel, П. Onda, V. rievolin, and A. Zenkevich

Influence of Stoichiometric Variations and Rapid Thermal Processing of ß-FeSi2 Thin Films on Their Electrical and Microstructural Properties 325

M. Döscher, B. Seile, M. Pauli, P. Kothe, J. Szymanski, J. Müller, and ti. Lange

*lnvited Paper

Vltl

Structural Properties of ß-FeSi2 Bulk Crystal Grown by Horizontal Gradient Freeze Method 331

tl. Kakemoto, Y. Tsai, A.C. Beye, tl. Katsumata, S. Sakuragi, Y. Makita, A. Obara, N. Kobayashi, tl. Shibata, S. Uekusa, T. Tsukamoto, T. Tsunoda, and Y. Imai

Thickness Dependent Phase Formation in Fe Thin Film and Si Substrate Solid Phase Reaction 337

Q.Y. Molnär, G. Peto, E. Zsoldos, Z.E. tlorväth, and N.Q. Khänh

Transport and Low Temperature Specific Heat Measurements of CrSJ2 Single Crystals 343

J.C. Lasjaunias, U. Gottlieb, O. Laborde, O. Thomas, and R. Madar

Anisotropic Optical Response in ß-FeSi2 Single Crystals and Thin Films 349

S. Bocelli, G. Guizzetti, F. Marabelli, G.B. Parravicini, M. Patrini, W. Henrion, N. Lange, and Y. Tomm

Hall Effect Investigation of Doped and Undoped ß-FeSi2 355 S. Brehme, L. Ivanenko, Y. Tomm, G-U. Reinsperger, P. Stauß, and tl. Lange

Evolution of the Optical Response from a Very Narrow Gap Semiconductor to a Metallic Material in (FexMni.x)Si 361

S. Bocelli, F. Marabelli, R. Spolenak, and E. Bauer

Interpretation of the Infrared Spectra of ß-FeSJ2 by Molecular Dynamics Simulations 367

Leo Miglio and Valeria Meregalli

Morphologies and Growth Modes of FeSi and ß-FeSi2 Layers Prepared by Rapid Thermal Annealing 373

P.M. Amesz, L.V. Jorgensen, M. Libezny, J. Poortmans, J. nijs, A. van Veen, tl. Schut, and J.Th.M. de tlosson

Magneto-Transport Properties of Epitaxial Iron-Silicides 379 S. Goncalves-Conto, N. Onda, and tl. von tiänel

PART VI: PROCESSING OF GERMANO-SILICIDE THIN FILMS

Characterization of Zirconium Germanosilicide Formed by Solid State Reaction of Zr with Sii_xGex Alloys 387

Z. Wang, D.B. Aldrich, P. Goeiler, R.J. Nemanich, and D.E. Sayers

Ion Beam Processed Ir/SiGe Structures 393 G. Curello, R. Gwilliam, M. Harry, B.J. Sealy, T. Rodriguez, and M. Clement

Phase Development in Pt/Si-Ge Alloy Layers 399 Michael W. Carmondy, Andrew S. Johnson, and Eric P. tivam

IX

Titanium Germanosilicide Phase Formation During the Ti-Sii.xGex Solid Phase Reactions 405

D.B. Aldrich, Y.L. Chen, D.E. Sayers, and R.J. riemanich

Iridium Suicides Formation on High Doses of Ge+ Implanted Si Layers 411

O. Curello, R. Owilliam, M. Harry, R.J. Wilson, B.J. Sealy, T. Rodriguez, and J. Jimenez-Leube

PART VII: SILICIDES AND ANALOGS FOR IR DETECTION

"Voltage-Tunable PtSi/SiGe/Si Schottky Diode Infrared Detectors 419

Jorge R. Jimenez

MBE Growth Considerations for the Fabrication of 640x480 IR Focal Plane Arrays of SiGe HIP Detectors 431

P.E. Thompson, M. Weeks, P. Tedrow, K. Hobart

Growth and Electrical Performance of Heterojunction p+ Si,.x.yGexCy/p" Si Diodes 437

C.L. Chang, A. St. Amour, L.D. Lanzerotti, and J.С Sturm

GeSi Infrared Detectors Using Selective Deposition 443 K. Strong, D.W. Qreve, and M.M. Weeks

Characterization of Ultra-Thin PtSi Films for Infrared Detectors 449

tl. Bender, P. Roussel, S. Kolodinski, A. Torres, R.A. Donaton, К. Маек, and P. van der Sluis

Effect of Phonon Confinement on Intersubband Losing Lifetimes of Si/SiGe Quantum Well Structures 455

L. Friedman and G. Sun

PART VIII: INTERFACES. SURFACES. AND EPITAXY

*BEEM and UHV-TEM Studies of PtSi/Si(001) 461 K.L. Kavanagh, B.A. Morgan, A.A. Talin, K.M. Ring, R.S. Williams, M.C. Reuter, and R.M. Tromp

Electrical and Structural Characterization of Ti Contacts to Si0.89Ge0.ii/Si(001) Epilayers 475

M. Lyakas, M. Beregovsky, I. Moskowitz, and M. Eizenberg

Heteroepitaxy of CoSi2 on Patterned Si(100) Substrates 481 O.P. Karpenko, D.J. Eaglesham, and S.M. Yalisove

' Invited Paper

x

Electrical Characteristics of CoSi2 Layers Formed by MEVVA Implantation of Co into Si 487

Qicai Peng and S.P. Wong

New Epitaxially Stabilized Silicide Phases 493 S. Goncalves-Conto, E. Müller, К. Schmidt, and ti. von lianel

Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers 499

tl. Bender, M.F. Wu, A. Vantomme, ti. Pattyn, and Q. Langouche

Effects of Growth Parameters on the Epitaxy of CoSi2/Si(100) Formed by Reactive Deposition Epitaxy 505

Andre Vantomme, Stefan Degroote, Johan Dekoster, Hugo Bender, and Guido Langouche

Epitaxial Films of Cobalt Disilicide (100) Evaporated onto Si (100) from a Mixed Source 511

P.T. Goeller, Z. Wang, D.E. Sayers, J.T. Glass, and R.J. nemanich

Fabrication of Epitaxial Silicides Thin Films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy 517

ti. Shibata, Y. Makita, ti. Katsumata, S. Kimura, N. Kobayashi, M. tiasegawa, S. tiishita, A.C. Beye, ti. Takahashi, J. Tanabe, and S. Uekusa

The Growth of Thin Ti Films on Si(l 1 l)-(7x7) Surfaces 523 Aldi A. Saleh and L.D. Peterson

Initial Stages of Reactions between Monolayer Fe and Si(001) Surfaces 529

M. tiasegawa, ti. Kobayashi, and ti. tlayashi

Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon 535

Andre N. Rocher, Andre Oustry, Marie Josee David, and Michel Caumont

Structure and Electrical Properties of Cu/Ge Ohmic Contacts 541

S. Oktyabrsky, M.O. Aboelfotoh, and J. tiarayan

PART IX: NOVEL STRUCTURES AND TECHNIQUES

Patterning of Silicide Layers by Local Oxidation 549 M. Dolle, S. Mantl, M. Hacke, St. Mesters, and ti.L. Bay

Rapid Self-Ion Stimulated Process for TiSi2 Thin Film Formation 555

V.l. Chapljuk, I.V. Gusev, and V.P. Belevsky

XI

Silicide Metallization of Aluminum Nitride Substrates for High-Temperature Microelectronics 561

E. Savrun, M. Sarikaya, A. Luan, and T. Pearsall

Electrical Resistivity of Three Polymorphs of BaSi2

and P-T Phase Diagram 567 M. Imai and T. Hirano

PART X: PROPERTIES OF SILICIDE THIN FILMS

Barrier Height Control and X-ray Diffraction Study of Metal on Sii-xGex/Si Grown by Very Low Pressure CVD 575

Z.Q. Shi, L. tie, and Y. Zheng

Low Temperature Transport Properties of Ru2Si3 Single Crystals 581

U. Qottlieb, R. Madar, and O. Laborde

Synchrotron Radiation Studies of Platinum Silicide Thin Films 587

Т.К. Sham, S.J. Haftel, A. Bzowshi, S.R. Das, D-X. Xu, S.M. tieaid, D. Brewe, and M. Kuhn

Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi2 Synthesis 593

M.R. da Silva, A.A. Melo, J.C. Soares, M.F. da Silva, R. Moons, Q. Langouche, A. Vantomme, O. Conde, Y-C. Lu, and H. Kung

Iridium Silicides Formed by RTA in Vacuum 599 Г. Rodriguez, A. Almendra, M. Botella, M.F. da Silva, J.C. Soares, H. Wolters, and C. Ballesteros

Characterization of Atmospheric Impurities in Tungsten Silicide Films by Secondary Ion Mass Spectrometry (SIMS) 605

Salman Mitha and David B. Sams

First Stages of the Platinum Electroless Deposition on Silicon (100) from Hf Solutions 611

P. Qorostiza, J. Servat, J.R. Morante, and F. Sanz

Effect of the Volume Variation on the Superconductivity of TaSi2 619

Г1. Keller, O. Laborde, U. Gottlieb, and R. Madar

Rapid Thermal Annealing of Tungsten Silicide Films 625 A. Fabricius, O. riennewitz, L. Spieß, V. Cimalla, and J. Pezoldt

Disorder and Strain Effects in the Optical Response of Thin CoSi Epitaxial Films on Si(l 11) 631

S. Bocelli, O. Ouizzetti, F. Marabelli, С Schwartz, S. Goncalves-Conto, and H. von Kane!

XII

Preparation of WSi2 by RTA Annealing of CVD-W Thin Films 637

К.Л. Gesheva, G.I. Stoyanov, D.S. Gogova, and G.D. Beshkov

643

647

XIII