silicon inner layer sensor prr, 8 august 2003 1 g. ginther update on the d0 run iib silicon upgrade...

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Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther University of Rochester On behalf of the Run IIb Silicon Group

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Page 1: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

Silicon Inner Layer Sensor PRR, 8 August 2003

1 G. Ginther

Update on the

D0 Run IIb Silicon Upgrade

for the

Inner Layer Sensor PRR

8 August 03

George Ginther

University of Rochester

On behalf of the Run IIb Silicon Group

Page 2: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

Silicon Inner Layer Sensor PRR, 8 August 2003

2 G. Ginther

Detector Design Six layer silicon tracker, divided into two radial

groups and two barrels Inner layers: Layers 0 and 1

18mm < R < 39mm Axial readout only 50/58 m readout for L0/L1 Assembled into one unit Mounted on integrated support

Outer layers: Layers 2-5 53mm < R < 164 mm Axial and stereo readout 60 m readout pitch Stave support structure

Employs only single sided silicon Three sensor sizes L0 (2 chip) L1 (3 chip) L2-L5 (5

chip) All sensors have intermediate strips

Page 3: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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12 sided carbon

fiber support structures

Six sensors mounted on each side of the support structure

Inner Layers

Layer 0 pre-prototype with co-bonded grounding flex circuits

L1 Support Structure Assembly

Page 4: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

Silicon Inner Layer Sensor PRR, 8 August 2003

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Readout SchematicsLayers 1-5: Hybrids mounted directly on silicon

Layer 0: Hybrids connected to sensors via analog cables (to address space and thermal constraints)

SVX4 chips mounted on hybrids; employed in SVX2 readout mode to facilitate reuse of Run IIa higher level readout infrastructure

Interface with current DAQ system

Sensor8’ Twisted Pair Cable

Adapter Card

Junction Card

2’ Digital Cable

Hybrid

Sensor8’ Twisted Pair Cable

Interface with current DAQ system

Junction Card

2’ Digital Cable

Analog

Cable

Hybrid

Page 5: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

Silicon Inner Layer Sensor PRR, 8 August 2003

5 G. Ginther

Layer 1 Sensors Prototypes

10 prototype Hamamatsu sensors ordered April 2002 and delivered 21 Sept 2002

Three sensors irradiated at KSU Ordered the remaining 3 prototype L1 sensors that Hamamatsu

had on the shelf, and these arrived 16 July 2003 These sensors are of very high quality

144 production sensors installed in final assembly BOE includes 50% spare sensors --estimates based on 120 yen/$

– 60.5K$ NRE and 94.0K$ for 216 sensors (and 30% contingency)

Layer 0 Sensors Prototypes

Only ELMA sensors available 144 production sensors installed in

final assembly BOE includes 50% spare sensors

– 54.8K$ NRE and 59.6K$ for 216 sensors (and 75% contingency)

Inner Layer Sensors

Page 6: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

Silicon Inner Layer Sensor PRR, 8 August 2003

6 G. Ginther

Update on Sensors

Sensor studies completed Electrical characteristics of prototype L1 sensors

and test structures Irradiation studies reviewed and completed Flux normalization verified via foil activation

Preparation for arrival of production sensors Certification of sensor probing sites

Fermilab Kansas State University Stony Brook Rochester (new probing site currently under development)

Visual and mechanical inspection prep Procedures and database setup

Outer layer sensor order placed 130 sensors arrived on 1 August 2003 QA evaluation in progress

Page 7: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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Advances in Other Areas

Second round SVX4 readout chip prototype approved, fabricated and currently under test

Yield appears to be high and chip appears fully functional Hybrid and module burn-in test stands completed Prototype analog cables delivered and tested Prototype L0 hybrids delivered and tested Grounding scheme on hybrids revised Grounding scheme for inner layer support structures

developed and being prototyped Fabrication fixtures prototyped and tested Mechanical grade pre-production stave fabricated Electrical grade pre-production stave in progress Carbon fiber (and autoclave) for stave shells ordered Bearings placed on z=0 prototype bulkhead

Page 8: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

Silicon Inner Layer Sensor PRR, 8 August 2003

8 G. Ginther

Silicon Upgrade StatusFinal

Ordered Delivered Ordered Delivered Order

ELMA

HPK

ELMA

HPK

L2 Sensors HPK

Analogue Cable Dycx

L0 Hybrid Amitr.

L1 Hybrid

CPT

others

L2S Hybrid

Honey

Basic

J unction Card

Twisted Pr. Cable

Adapter Card

Purple Card

Test Stand Elctr.

First Prototype Second Prototype

Component Vendor Design

L0 Sensors

L1 Sensors

Digital Cable

L2A Hybrid

Page 9: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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Sensor Production Schedule

Hamamatsu provided a sensor production schedule which includes L0 and L1 sensors

Delivery of first batch of L2-5 sensors was almost on schedule

TYPE L1 L2-5 L0 TOTAL

QTY

3/4 0

3/5 0

3/6 0

3/7 130 130

3/8 130 130

3/9 270 270

3/10 110 270 380

3/11 270 50 320

3/12 270 50 320

4/1 106 270 60 436

4/2 270 56 326

4/3 400 400

4/4 400 400

4/5 55 55

4/6 0

4/7 0

TOTAL 216 2735 216 3167

Page 10: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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Sensor Delivery If delivery of L0 sensors is completed

after 14 Sept 04, project misses DOE milestone by 14 Sept 04 should not cause module production slip

If Hamamatsu L0 sensor production schedule just slips with the order date slip, then this order should be placed within 3 months to avoid module production slip

– Order for L2-L5 sensors took six weeks from PRR to release And, we have no prototype Hamamatsu L0 sensors, and would prefer

to get a few asap for studies after 16 Sept 04 puts L0 sensors on critical path

2 days slack relative to current silicon ready to move date

If delivery of L1 sensors is completed after 28 June 04, project misses DOE milestone by 24 June 04 should not cause module production slip

If Hamamatsu L1 sensor production schedule just slips with order date slip, then this order should be placed within a month to avoid module production slip

after 4 October 04 puts L1 sensors on critical path 14.2 weeks slack relative to current silicon ready to move date

Page 11: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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Summary

Excellent progress on prototyping and pre-production of the D0 Run IIb Silicon Upgrade

Prototypes of all components of the design are in hand Pre-production for most parts in progress Remaining technical challenges are being addressed Have started placing production orders

A strong, knowledgeable, experienced and very dedicated team is working hard (in a rather challenging climate) to produce the upgraded silicon detector that D0 needs to significantly enhance its performance throughout Run IIb

The constraints on the project dictate that we continue to push ahead in spite of the uncertainty

Page 12: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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Charge The Committee is requested to review the overall readiness for

placing the production order for the inner layer sensors for the DZero Run IIb silicon detector. In particular, the project is requesting that the Committee evaluate the following items:

Whether the sensor specifications meet the technical requirements for Run IIb, recommending any changes that may be necessary. This should include, but not be limited to, consideration of results from radiation testing.

The completeness and viability of the quality assurance program the project has in place to qualify the production-version inner layer sensors, including a review of:

Soundness of the logistics of the testing and qualification plans; Technical specifications and criteria for quality assurance; Adequacy of the resources, both labor and equipment, that have been requested in

the project plan for testing and QA. Included here should be an evaluation as to whether the throughput of qualified sensors will be adequate to maintain the project schedule;

The adequacy of the plans for logging data from sensor testing. The overall technical readiness for placing the order, and the

procurement readiness and strategy. If the Committee has any reservations here, it is requested that they describe what additional work should be done in order to meet proper readiness criteria.

Page 13: Silicon Inner Layer Sensor PRR, 8 August 2003 1 G. Ginther Update on the D0 Run IIb Silicon Upgrade for the Inner Layer Sensor PRR 8 August 03 George Ginther

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Inner Layer Sensor PRR

Thank you for the insights, constructive comments, and recommendations that resulted from your review of the Outer Layer Sensors

Thanks for taking the time to help us in this important endeavor