silicon photomultiplier - hamamatsu photonics · 2018. 4. 10. · introduction very high intrinsic...
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![Page 1: Silicon Photomultiplier - Hamamatsu Photonics · 2018. 4. 10. · Introduction Very high intrinsic gain together with minimal excess noise make silicon photomultiplier (SiPM) a possible](https://reader035.vdocument.in/reader035/viewer/2022062613/6147822aafbe1968d37a18cd/html5/thumbnails/1.jpg)
Silicon Photomultiplier
Slawomir Piatek
Technical Consultant, Hamamatsu Corp.
Operation, Performance & Possible Applications
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Introduction
Very high intrinsic gain together with minimal excess noise make
silicon photomultiplier (SiPM) a possible choice of a photodetector in
those applications where the input light is in the photon-counting
range.
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Introduction
This webinar is a high-level review of SiPM’s structure, operation,
and opto-electronic characteristics, followed by a discussion of
some possible applications.
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Outline
• Structure and operation
• Opto-electronic characteristics
• Applications
+ Automotive ToF LiDAR
+ Flow cytometry
+ Radiation detection and monitoring
• Summary and conclusions
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SiPM
Structure and Operation of a SiPM
Portraits of SiPMs (images not to scale)
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SiPM structure
SiPM is an array of microcells
=APD
RQ
p+
π
n+
p+
oxide
Single microcell
electrical equivalent
circuit of a microcell
Sid
e vi
ewTo
p vi
ew
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SiPM structure
...
Anode
Cathode
single microcell
RQ
APD
All of the microcells are connected in parallel
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SiPM specifications
Active area: 1.3×1.3 − 6×6 mm2
Microcell size (pitch): 10×10, 15×15, 25×25, 50×50, 75×75 μm2
Number of microcells: (active area)/(microcell size), from 100’s to
10,000’s
Overvoltage: ΔV = VBIAS – VBD; recommended by the manufacturer
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SiPM operation
VBIAS > VBD
K
A× G
RL
time [ns]
Am
plitu
de [m
V]
Example of single-photoelectron
waveform (1 p.e.)
Gain = area under the curve in electrons
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SiPM operation
time [ns]
Am
plitu
de [m
V]
Fast component
Slow component
RC time constant of the slow component
depends on microcell size (all else being equal)
Recovery time tR ≈ 5 times the RC time
constant
tR is on the order of 10’s to 100’s ns but in
practical situations, it is also a function of
detection bandwidth
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SiPM operation
time
Arb
.
The output of an SiPM is a chronological superposition of current
pulses
Current pulses due to photons
SiPM also outputs current pulses even in absence of light: dark
counts (dark current)
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Dark Counts
time
Arb
.
Dark-count pulses are indistinguishable from those due to photons
The rate of dark counts depends on overvoltage, temperature, and
size of the active area
Current pulses due to photons and dark
counts are indistinguishable
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Crosstalk
Primary discharge can trigger
a secondary discharge in
neighboring microcells. This is
crosstalk.
time
Arb
.
2 p.e. crosstalk event
Crosstalk probability depends on
overvoltage
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Operation
VBIAS
1, 2, 3,….
VBIAS
If the pulses are distinguishable,
SiPM can be operated in a photon
counting mode.
If the pulses overlap, the SiPM can be
operated in an analog mode. The
measured output is voltage or current.
counter
SiPM V or I
0 100
light
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SiPM detection circuits
V/V
RL
CR
VBIAS
SiPM
Vout
CR
VBIAS
SiPM
Vout
RF
TIA+
-
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SiPM
Performance and characteristics
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Characteristics of a SiPM
• Photon detection efficiency
• Gain
• Crosstalk probability
• Dark current & dark counts
• Linearity & dynamic range
• Temperature effects
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Photon detection efficiency
wavelength [nm]
Pho
ton
dete
ctio
n ef
ficie
ncy
[%] • Photon detection efficiency (PDE) is
a probability that an incident photon
is detected. It depends on:
- wavelength
- overvoltage
- microcell size
Peak PDE 20% − 50%
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Photon detection efficiency
wavelength [nm]
Pho
ton
dete
ctio
n ef
ficie
ncy
[%]
5
10
15
20
25
30 Examples of PDE curves for
SiPMs optimized for NIR, VIS,
and UV response.
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Gain
Overvoltage [V] C
rosstalk prob. & P
DE
• Gain of SiPM is comparable
to that of a PMT.
Excess noise very low:
F ~ 1.1, mostly due to crosstalkGai
n
S13720, 1.3×1.3 mm2
• Gain depends linearly on
overvoltage
25 μm
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Gain versus temperature
Does gain of an SiPM depend on temperature?
Yes – if the bias voltage is fixed
Reverse bias voltage [V]
Gai
n [×
106 ]
Otte et al. (2016)
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Gain versus temperature
Does gain of an SiPM depend on temperature?
No – if the overvoltage is fixed
Temperature [°C]G
ain
varia
tion
[%]
Fixed overvoltage
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Crosstalk
Overvoltage [V]
Crosstalk prob. &
PD
E
PCT increases with overvoltage
Crosstalk is the main contributor to
excess noise
F ≈ (1+PCT)
S13720, 1.3×1.3 mm2
25 μm
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Dark Current
Overvoltage [V]
Dar
k cu
rren
t [A
]
S13720, 1.3×1.3 mm2 Example of dark current versus overvoltage
DCR = ID/eμ
ID = 1×10-7 A (at 7 V)
μ = 1.2×106 (at 7 V)
-> DCR ≈ 520 kHzor once per about 2 μs
25 μm
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Linearity and dynamic range
Incident light level (850 nm) [W]
Out
put c
urre
nt [A
]
S13720, 1.3×1.3 mm2 Example of output current versus incident light
level.
Photon irradiance (at 850 nm) = 4.3×1018× P[W]
P = 10-8 W −> 4.3×1010 photons per second
Linearity depends on the number of
microcells for a given active area
25 μm
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SiPM, PMT & APD
This webinar will compare and contrast SiPM with a photomultiplier
tube (PMT) and APD.
Let’s briefly review the operation of a PMT and APD
Examples of a PMT (left) and APD (right).
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Operation of a PMT
R1 R2 R3 R4 R5 R6 R7
C1 C2C3
K P
D1 D2 D3 D4 D5 D6
V ~ 1000 V
e−
Rf
IPIK
2 ns/div
10
0 m
V/d
iv
Typical voltage
divider
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SiPM versus PMT
• Solid state versus vacuum tube
technology
• Comparable gains
• Comparable excess noise
• Dark count rate per unit active area
larger in SiPM
• E & B field immunity in SiPM
• Comparable photosensitivity in the
spectral overlap region
• Greater optimization for PMTs
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Operation of an APD
self-quenching avalanche
VBIAS
RL
electronsholes
IPH
APD biased below breakdown voltage
Single photon can lead up to about
100 of electron-hole pairs
Avalanche is self-quenching
Thus gain up to ~100
photon
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SiPM versus APDlo
g(G
ain)
Gain = 1
linear
regionGeiger
region
VBIASVBD
APDs SiPMs
• Differ in construction
• GainSiPM >> GainAPD
• FSiPM << FAPD
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Possible applications of SiPMs
• Flow cytometry
• Automotive time-of-flight LiDAR
• Radiation detection and monitoring
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Automotive time-of-flight LiDAR
How far is this tree?
LiDAR
LiDAR = Light Detection and Ranging
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Automotive ToF LiDAR: basic concept
to target
emitted pulse
“start” pulse
“stop” pulse
emission optics
timer
collection optics
laser
returned pulse after Δt
beam splitterw = cτ
“fast” photodetector
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Automotive ToF LiDAR: basic concept
Measure round-trip time-of-flight Δt
Range (distance to the reflection point) = cΔt/2; here c is the
speed of light
By scanning the surroundings, a 3D map can be constructed
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Characteristics of received light
• Wavelength: 905 nm or 1550 nm
• Pulse: duration 2 – 5 ns
• No. of photons per returned pulse: 100’s – 10,000’s on
detector’s active area
• Repetition frequency: kHz - MHz
• DC photon background
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Photodetector requirements
• High quantum efficiency at 905 nm and/or 1550 nm (affects
detection range)
• High detector (intrinsic) gain (reduces importance of electronic noise)
• Small excess noise (affects timing error)
• Small time jitter (affects distance resolution)
APD has been a default detector. Could SiPM be a better choice?
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Photosensitivity
Wavelength [nm]
Pho
ton
dete
ctio
n ef
ficie
ncy
[%]
Wavelength [nm]
Qua
ntum
effi
cien
cy [
%] S10341 Si APDS13720 SiPM
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Intrinsic gain
Overvoltage [V]
Gai
n
S13720 SiPM
Reverse voltage [V]
S10341 Si APD
Gai
n38
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Excess noise
Overvoltage [V]
Crosstalk probability [%
]
F ≈ 1+PCT = 1.06
S13720 SiPM
Gain
Exc
ess
nois
e fa
ctor
S10341 Si APD
F ≈ (Gain)0.3 = 3.2 for gain = 50
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Time jitter
There are two contributions to timing jitter:
1. “Classical” jitter – variation in response time, often reported for
a single photon illumination. This contribution is on the order of
100 ps for SiPMs and APDs
2. Time-walk effect. For a constant trigger level, timing depends
gain variation and signal intensity.
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Time jitter
time
arb.
trig. level
Different trigger times:
time walk effect
For a given light level SiPM has
smaller time-walk effect because
of its lower excess noise.
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Take-away points
1. SiPMs are likely to compete successfully with APDs at 905 nm
because of their higher gain and much lower excess noise.
Empirical evidence is forthcoming.
2. Sensitivity at 905 nm will improve in a new generation SiPMs
3. SiPMs with sensitivity at 1550 nm are being developed.
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Flow cytometry
Studying biological cells with light
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Flow cytometry (basic concept)
Laser
Forward-scatter
photodetector
Side-scatter photodetector
Data processing
flow
flow
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Flow cytometry
Excitation light
Fluorescent
light
cell
fluorescent dye
Flow cytometry also uses fluorescence tagging to study cells45
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Flow cytometry
• Used to study and sort biological cells
• Side-scatter signal vs. forward scatter signal depends on cell
properties
• Fluorescence is also employed (dyes attached to cells) to
produce a variety of plots using fluorescence signal(s)
• The optical system employs a combination of lasers (different
wavelengths), optical filters, and photodetectors
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Flow cytometry data
Forward scatter signal
Sid
e sc
atte
r si
gnal
Side scatter vs. forward scatter plot – the
most fundamental in flow cytometry
Cell’s characteristics such as size,
complexity, or refractive index affect the
relative strengths of side scatter and
forward scatter signals
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Characteristics of received light
• Wavelength: can be selected depending on cell sizes and
fluoresce
• Pulses − duration dependent on sheath flow speed and cell size and is on the order of μs.
• No. of photons per pulse varies from few to thousands
• Rate of pulses in kHz
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Side-scatter photodetector requirements
• High photodetection efficiency (affects S/N of detection)
• High dynamic range (affects accuracy of the scatter plot; systematic errors)
• High intrinsic gain (reduces importance of electronic noise)
• Minimal excess noise (affects accuracy of the scatter plots; random noise)
• High linearity (affects accuracy of the scatter plot; systematic errors)
PMT is commonly used. Could SiPM be a better choice?
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Photosensitivity
S13360
3×3 mm2, 25 μm
14,400 microcells
Wavelength [nm]
PD
E [%
]
Wavelength [nm]C
atho
de r
adia
nt s
ensi
tivity
[m
A/W
]
H10720
QE ≈ 28%
at 450 nm
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GainG
ain
Overvoltage [V]
14,400 μcells
S13360
3×3 mm2, 25 μm
Gai
n
Control voltage [V]
H10720
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Excess Noise
F ≈ 1+PCT (SiPM)
F ≈ δ/(δ – 1) (PMT; δ – gain of the first dynode )
Excess noise increases with gain
Excess noise decreases with gain
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Linearity/dynamic range (PMT)
Output current [mA]
Dev
iatio
n [%
]
H10720 10% nonlinearity: 75 mA, TP = 500 ns
Gain = 2×106, QE = 28%
No. of incident photons at 450 nm:
4.2×105
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Linearity/dynamic range (SiPM)
Ntot = 14,400; PDE = 25%, tr = 50 ns
Nγ.PDE = 1.1×105 (ideal response)
Nfired = 0.75×105 or 32% below an ideal response
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Take-away points
1. The major weakness of SiPMs in flow cytometry is limited
dynamic range and linearity
2. However, out of dozens of optical channels in a flow cytometer,
SIPM can be suitable for some
3. There is a great interest in using SiPMs in flow cytometry but
little published work on this subject exists
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Radiation monitoring and spectroscopy
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Radiation monitoring (basic idea)
Scintillator Photodetector
Ionizing
radiation
time
Out
put
trigger level
radiation events
An event is registered if the output signal exceeds the threshold
level.
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Radiation monitoring (basic idea)
Amplifier Discriminator Counter
• Used to detect the presence of specific radiation
• Monitoring devices are often portable and hand-held.
• Information provided: radiation rate (flux can be derived)
1,2,3…
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Characteristics of received light
• Wavelength dependent on the choice of scintillator often in the
300 nm – 500 nm range
• Pulses
• Number of photons per pulse depends on energy of ionizing
radiation and type of scintillator
• Duration of the pulse depends on the size and type of the scintillator (decay time constants range from ns to μs)
• Frequency of pulses depends on the rate of incoming radiation
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Photodetector requirements
• High photodetection efficiency
• High intrinsic gain
• Ability to couple to a scintillator
• Suitable for portable hand-held devices
• Large active area
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Radiation spectroscopy
Scintillator Photodetector
Ionizing
radiation
C
R
Charge integrator
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Radiation spectroscopy (basic idea)
V/V
Discriminator
A/D
ComputerCharge
integrator
Energy
No.
of
even
ts
Resolution =
FWHM
E
FWHM
E
Resolution is affected by the
properties of the photodetector
and the scintillator.
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Photodetector requirements
• High photodetection efficiency (affects S/N of the detection and thus
resolution)
• High intrinsic gain (reduces the importance of electronic noise and, thus,
better count rate and measurable lower energy levels)
• Ability to couple to a scintillator
• Low excess noise (affects energy resolution)
• High linearity (affects systematic errors and energy range)
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Radiation detection photodetectors
PMTs used to dominate the detector choice in radiation detection,
monitoring, and spectroscopy.
SiPMs are becoming a viable alternative.
Due to a multitude of possible detection scenarios, it is best to
perform a side-by-side comparison between an SiPM and a PMT.
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SiPM vs. PMT in γ-ray detectionSiPM PMT
Energy [MeV] Energy [MeV]
Num
ber
of c
ount
s
Num
ber
of c
ount
s
Example of energy spectra from Grodzicka et al. 2017 [Nuclear Inst. and Methods in
Physics Research, A 874 (2017) 137–148]
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SiPM vs. PMT in γ-ray detection
SiPM – PMT comparison for different energies and scintillators from
Grodzicka et al. 2017 [Nuclear Inst. and Methods in Physics Research, A 874 (2017) 137–148]
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Take-away points
1. SiPMs provide comparable performance to PMTs in radiation
monitoring and spectroscopy
2. It is likely that the majority of hand-held devices will employ
SiPMs
3. Side-by-side comparison is the best approach in deciding if an
SiPM or a PMT should be used for a given detection application
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Summary and conclusions
• High gain, low excess noise, magnetic immunity, and ease of
use are some of the highly desirable characteristics of SiPMs
• There is a great interest in using SiPMs instead of APDs and
PMTs in a variety of applications
• New generation SiPMs will have improved characteristics
making the transition more likely
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Visit Booth #521 & Presentations at PW18
Development of an InGaAs SPAD 2D array for Flash LIDAR
Presentation by Takashi Baba, January 29, 2018 (11:00 AM - 11:30 AM)
Development of an InGaAs MPPC for NIR photon counting applications
Presentation by Yusei Tamura, January 30, 2018 (5:50 PM - 6:10 PM)
Photodetectors, Raman Spectroscopy, and SiPMs versus PMTs
One-day Workshop with Slawomir Piatek, January 31, 2018 (8:30 AM - 5:30 PM) – Free Registration Needed
Development of a Silicon hybrid SPAD 1D array for LIDAR and spectrometers
Poster session with Shunsuke Adachi, January 31, 2018 (6:00 PM - 8:00 PM)
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