All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Standard)

PART NUMBER: 2SK3603-01MR

MANUFACTURER: Fuji Electric

REMARK: Body Diode (Standard)

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

POWER MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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Body Diode Model

Pspice model parameter

Model description

IS Saturation Current

N Emission Coefficient

RS Series Resistance

IKF High-injection Knee Current

CJO Zero-bias Junction Capacitance

M Junction Grading Coefficient

VJ Junction Potential

ISR Recombination Current Saturation Value

BV Reverse Breakdown Voltage(a positive value)

IBV Reverse Breakdown Current(a positive value)

TT Transit Time

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Transconductance Characteristic Circuit Simulation Result

Comparison table

ID(A) VGS(V)

Error (%) Measurement Simulation

1 4.3 4.5 4.651

2 6.1 6.3 3.279

5 9.5 9.7 2.105

10 13 13.1 0.769

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V_V1

0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V

I(V2)

1.0A

10A

500mA

40A

V2

0Vdc

V3

25Vdc

0

V1

10Vdc

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

0.5 4.925 4.9767 1.050

1 5.08 5.1087 0.5649

2 5.29 5.2938 0.0718

5 5.67 5.6696 -0.0070

10 6.1 6.12 0.3279

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V_V3

0V 2.0V

I(V2)

0A

10A

V2

0Vdc

V3

25Vdc

0

V1

10Vdc

Id-Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=8, VGS=10V Measurement Simulation Error (%)

RDS (on) 79 m 79.002 m 0.0025

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Time*10ms

0 10n 20n 30n 40n

V(W1:3)

0V

2V

4V

6V

8V

10V

12V

14V

D1

Dbreak

V2

0Vdc

I2

16Adc

V175Vdc

0

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 10m

TR = 10n

-

+W1

ION = 0uAIOFF = 1mAW

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=75V ,ID=16A

Measurement Simulation Error (%)

Qgs 9 nC 9.05 nC 0.56

Qgd 6 nC 6.01 nC 0.17

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Capacitance Characteristic (Vds vs. Cbd)

Simulation Result

VDS(V)

Cbd(pF)

Error(%) Measurement Simulation

1 920 919 -0.1087

2 780 776 -0.5128

5 550 545 -0.9091

10 387 380 -1.8088

20 250 251 0.4

50 133 135 1.5038

100 90 85 -5.5556

Simulation

Measurement

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Time

5.000us 5.050us 5.100us

V(2) V(3)/4.8

0V

4V

8V

12V

0

V3

0Vdc

0

2

0

L1

0.05uH

L2

0.03uH

3

RG

10

RL

6

V1

TD = 5u

TF = 7nPW = 5uPER = 100u

V1 = 0

TR = 6n

V2 = 10

VDD

48

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=8A, VDD=48V VGS=0/10V

Measurement Simulation Error(%)

td (on) 12 ns 12.06 ns 0.5

VGS

ID

VGS = 10V

VDS =48 (V)

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V_V3

0V 5V 10V

I(V2)

0A

5A

10A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=5.0V

5.2V

V3

10Vdc

V1

10.0Vdc

V2

0Vdc

0

5.4V

5.6V

5.8V

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V_V3

0V 0.5V 1.0V 1.4V

I(V2)

10mA

100mA

1.0A

10A

100A

V3

0Vdc

V2

0Vdc

R1

0.01m

0

Forward Current Characteristic of Reverse Diode

Circuit Simulation Result

Evaluation Circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.100 0.624 0.631 1.090

0.200 0.658 0.655 -0.456

0.500 0.690 0.687 -0.435

1.000 0.714 0.711 -0.420

2.000 0.736 0.735 -0.204

5.000 0.764 0.766 0.262

10.000 0.788 0.790 0.254

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Time

0.4us 0.8us 1.2us 1.6us 2.0us 2.4us

I(R1)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trr=trj+trb 320 ns 316 ns 1.250

V1

TD = 75n

TF = 10nPW = 1uPER = 10u

V1 = {-9.4}

TR = 10n

V2 = {10.7}

0

R1

50

0

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Reverse Recovery Characteristic Reference

Trj=195(ns) Trb=125(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example