spin pumping and brasília inverse edelstein effect rio in
TRANSCRIPT
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Universidade Federal de Pernambuco Departamento de Física Recife, PE, Brazil [email protected]
Spin pumping and
inverse Edelstein effect
in YIG/graphene
Sergio M. Rezende
Spin Orbit Coupling and Topology in Low-D
Spetses, Greece
July 1st, 2016
Brasília
São Paulo
Rio
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“Earlier” phenomena in magnetic multilayers (t<2000)
• Single films: Surface and induced anisotropies, magnetic damping
• FM/AF exchange bias effect
• Interlayer exchange coupling in FM/NM/FM (FM and AF coupling)
• Giant magnetoresistance-GMR
• Spin valve phenomena
• Spin transfer torque (free-layer/spacer/fixed-layer)
• Magnetic tunneling
Spintronics
“New areas” of Spintronics
• Spin current phenomena: Spin pumping and Spin Hall effects
• Spin Caloritronics: Spin Seebeck and spin Peltier effects
• Insulator-based spintronics
• Antiferromagnetic spintronics
• Spin orbitronics; 2D-Spintronics
SMR 2
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Rapid development of Spintronics
Continuing discovery of new phenomena involving
charge, spin and heat currents has boosted the
development of SPINTRONICS, offering good
opportunities for basic research and for applications
Items published per year Citations per year
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I. Spin current in metals Generation: Spin Hall Effects
Spin Pumping Effect
Spin Seebeck Effect
Detection: Inverse Spin Hall effect (ISHE)
II. Spin pumping experiments with YIG/metal
III. Spin to charge current conversion in YIG/Gr
Sample preparation and characterization
Spin pumping experiments
Interpretation with inverse Edelstein effect
Outline
SMR 4
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Charge flux without spin flux
Metal layer
Charge and spin currents in metals
Spin current IS = I↑ - I↓ = 0
Charge current IC = I↑+I↓ ≠ 0
SMR 5 JC=charge/time.area
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Charge current IC = I↑+I↓ = 0
Spin current IS = I↑ - I↓ ≠ 0
Spin flux without charge flux
Metal layer
Charge and spin currents in metals
JS=spin (angular momentum)/time.area SMR 6
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I Charge current
SMR 7
Metal (NM) with strong spin-orbit coupling (Pt, Pd)
H
Spin Hall effect (SHE)
Theoretical prediction: Dyakonov & Perel 1971; Hirsch 1999
Intrinsic and extrinsic souces
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Charge current spin current
Accumulation of spin-up
Accumulation of spin-down
Spin current JS
Charge current JC
Metal with strong spin-orbit coupling
(Pt, Pd)
Electrons with opposite spins in JC are deflected to opposite sides creating spin current
S-O US-OµL×S
H
Spin Hall effect (SHE)
spin polarization
spin Hall angle
05.0~SHin Pt Courtesy: Antonio Azevedo SMR 8
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FM
)(tm
Js
Spin current
2002- A. Brataas, Y. Tserkovnyak,
G.E Bauer, B. I. Halperin
Precessing spins in FM layer pump
spin current (angular momentum)
into NM layer
NM
Spin pumping effect (SPE)
Spin current Spin precession SPE
t
MM
M
gJ r
S
24
Spin mixing conductance
STT
Inverse of the spin transfer torque by spin current SMR 9
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SMR 10
Ferromagnetic Resonance (FMR)
Permalloy film (60 nm)
0.6 0.7 0.8 0.9 1.0
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
Sig
na
l d
P/d
H (
arb
. u
nits)
Magnetic field H (kOe)
f = 8.6 GHz
8.2/ Bg
2/1
0 )]4([ effMHH
GHz/kOe
H
)(th
M
0
Microwave
cavity with
sample
Magnet
Detector Microwave generator
Processor M
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b- Spin pumping: theory
Spin current density due to precessing magnetization at the interface
dt
MdMg
MJ S
)0()0(
4)0(
2
FM
NM
Effects of spin pumping: 1-Magnetic damping
Spin current = angular momentum/time= TORQUE
Enhanced damping
due to spin pumping
Flow of angular momentum out of the FM causes relaxation of M
SMR 11
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SMR 12
Spin pumping damping in Permalloy/Pt
Py
0 10 20 30 40 50 60 70 800
10
20
30
40
50
60
70
80
Lin
ew
idth
H
(O
e)
Thickness tPy
(nm)
Spin pumping damping is known to be effective in very thin FM films
Observed by Misukami, Ando & Miyasaki (2002)
2-m scattering by surface roughness( ) Arias & Mills (1998)
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SMR 13
Spin pumping damping in Permalloy/Pt
Py
Py/Pt (10 nm)
0 10 20 30 40 50 60 70 800
10
20
30
40
50
60
70
80
Lin
ew
idth
H
(O
e)
Thickness tPy
(nm)
Spin pumping damping is known to be effective in very thin FM films
Observed by Misukami, Ando & Miyasaki (2002)
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ΔV
Did not explain the spin-to-charge current conversion
Electric detection of Ferromagnetic Resonance (FMR)
SMR 14
Effects of spin pumping: 2-Voltage generation
FMR signal
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SMR 15
Explains the generation of VDC in terms of spin-pumping and the Inverse Spin Hall Effect (ISHE)
Effects of spin pumping: 2-Voltage generation
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SMR 16
V ≠ 0
Charge current JC Spin current JS
Inverse Spin Hall effect (ISHE) [Hirsch 99, Saitoh 2006]
S-O
US-OµL×S
Courtesy: Antonio Azevedo
Spin current Charge current
(Onsager reciprocal of SHE)
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Spin Hall effects: Good reviews
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FMR-Spin pumping in FM/NM bilayer
SMR 18
Spin current generates charge current by ISHE
H M
V
JS
Pumped spin current
JC
x
y
z
Peak voltage
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SMR 19
AC + DC voltage
FM (Ni81Fe19)
NM (Pt)
Si
Ag
- - - + + +
m(t)
Spin current generates charge current by ISHE
SJ
Contributions to DC voltage Spin pumping + ISHE Anisotropic magnetoresistance (classical induction)
FMR-Spin pumping in FM/NM bilayer
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DC voltage generated by FMR
0
2
0 cos)(),( rfeffSHSP hHLgHV
00
2
0 sin2sinsin)('cos)(),( rfIIAMR hHLHLHV
SPAMR VVV
H
0
NM FM
)(th
0.70 0.75 0.80 0.85 0.900.0
0.5
1.0
1.5
2.0
Sig
na
l d
P/d
H (a
rb. u
nits)
Magnetic field H (kOe) 0.70 0.75 0.80 0.85 0.90
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
Sig
na
l d
P/d
H (a
rb. u
nits)
Magnetic field H (kOe)
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Typical in-plane dependence of the dc voltage
DC voltage generated by FMR
0
3
6
9
12
V (
V)
0
3
6
9
12
0
3
6
9
12
V (
V)
0
3
6
9
12
0.6 0.7 0.8 0.9 1.0
-12
-9
-6
-3
0
V (
V)
Magnetic Field (kOe)
0.6 0.7 0.8 0.9 1.0
-12
-9
-6
-3
0
Magnetic Field (kOe)
Symmetric for = 0o and 180o and changes polarity
0
Py (18.5 nm)/Pt (6.0 nm)
0.6 0.7 0.8 0.9 1.0-3
0
3
6
9
12
V (
V)
Magnetic Field (kOe)
V
fit
Vsym
Vasym
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How to separate VSP from VAMR
SMR 22
Spin pumping damping gives spin-mixing conductance
for Py/Pt
A. Azevedo et al, Phys. Rev. B 83, 144402 (2011)
Spin Hall angle
Spin diff. length
For Pt
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SPE+ISHE in FM insulators/NM
YIG
SPE+ISHE
Yttrium Iron Garnet –YIG-(Y3Fe5O12)- ferrimagnetic insulator with very small magnetic losses.
SMR 23 Free from the AMR voltage
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II. Spin pumping experiments in YIG/Metal
SMR 24
MW generator
MW Circulator
Power Supply
Lock-in
Sample in
the hole of
shorted
waveguide
Gaussmeter
Electromagnet
Detector
Modulation coils
(for FMR)
Nanovoltmeter
Microstrip assembly for broadband measurements
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200 Oe
0.70 0.75 0.80 0.85 0.90
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
Sig
na
l d
P/d
H (
arb
. u
nits)
Magnetic field H (kOe)
Permalloy film (60 nm)
Ferromagnetic Resonance (FMR) in Py and YIG
0.70 0.75 0.80 0.85 0.900.0
0.5
1.0
1.5
2.0
Sig
na
l d
P/d
H (
arb
. u
nits)
Magnetic field H (kOe)
dH
2.50 2.55 2.60 2.65 2.70
-60
-40
-20
0
20
40
60
Sig
na
l d
P/d
H (
arb
. u
nits)
Magnetic field H (kOe)
H2
H 24 Oe
2.57 2.58 2.59 2.60
-60
-40
-20
0
20
40
60
Sig
na
l d
P/d
H (
arb
. u
nits)
Magnetic field H (kOe)
H 0.5 Oe
30 Oe Yttrium Iron Garnet -YIG (Y3Fe5O12)- (28 µm)
f=9.4 GHz
SMR 25
standing SW mode
small damping
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YIG
FMR damping by spin pumping in YIG/Pt Pt
M.B. Jungfleisch et al, Phys. Rev. B 91, 134407 (2015)
does not vanish for large dYIG
YIG (6 µm) f=9.4 GHz
SMR et al, Phys. Rev. B 88, 014404 (2013)
tcoh~ 300 – 500 nm
SP-line broadening in thick YIG films
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Yttrium Iron Garnet –YIG (6 µm)
FMR f=9.4 GHz
SMR 27
FMR and spin pumping in YIG/Pt and YIG/Ta
Spin pumping free from AMR
P=32 mW
similar
Actually smaller than Pt
T=300 K
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YIG (6 µm)/Pt (4 nm)
SMR 28
FMR and spin pumping in YIG/Pt and YIG/Ta
Knowing and for Pt, and for YIG/Pt, measurement of
versus microwave power gives for the YIG/Pt interface
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SMR 29
SP-ISHE in metallic antiferromagnetic IrMn
Spin pumping by FMR
2/ HPgRV effSHNSP
T=300 K
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SMR 30
Spin-Seebeck
Consistent with spin pumping
SP-ISHE in metallic antiferromagnetic IrMn
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III. Spin to charge current conversion in YIG/Gr
Sample preparation and characterization
Spin pumping experiments
Interpretation with inverse Edelstein effect
2D-Spintronics
SMR 31
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Preparation of YIG/graphene sample
1- Large area graphene grown by CVD on a Cu foil
2- Spun deposition of PMMA (120 nm)
3- Soaking in (NH4)2S2O8 to remove Cu foil
4- Washed with
deionized water
5- YIG/substrate is lifted from underneath PMMA/Graphene and Gr bonds to the YIG film
7- Cleaning in isopropanol and drying in nitrogen flow
6- PMMA removed
with acetone
YIG (6 μm) grown by LPE on (111) GGG. Cut with 1.5 x 3.0 mm
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500 1000 1500 2000 2500
Graphene on YIG/GGG
2DG
Graphene on SiO2/Si
2D
Inte
nsity(a
.u.)
G
YIG/GGG
Raman Shift(cm-1)
Characterization of YIG/SLG structure
Evidence of a single-layer graphene on YIG
Features of SLG
SMR 33
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Characterization of YIG/SLG structure
STM images
40 nm 0.5 nm 0.5 nm
10 20 30 40 50 60 70 80 90
101
102
103
104
105
106
107
50.8 51.0 51.2 51.410
2
104
106
108
GGG/YIG
Inte
nsity(c
ou
nts
/se
c)
2(deg)
GGG(444)YIG(444)
X-ray diffraction
0 1 2 3 4 5 6 7
Graphene on GGG/YIG
Yttriu
mY
ttriu
m
Iro
n
Ca
rbo
nO
xyg
en
Percentage
C: 10,06%
O: 45,32%
Fe: 27.75%
Y: 16.87%
Iro
n
Inte
nsity(a
.u.)
Energy (keV)
EDS
No traces of
impurities
SMR 34
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I-V curve shows Ohmic contacts between the electrodes and SLG
SMR 35
Resistance measurements
-1.0 -0.5 0.0 0.5 1.0
-0.1
0.0
0.1 R=9 kOhms
Cu
rre
nt
(mA
)
Voltage (V)
Magnetoresistance measured with I=300 µA, static field H in the plane + field modulation
for lock-in detection
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Magnetoresistance of YIG/SLG structure
Conclusion: Proximity effect induces magnetization and spin-orbit coupling in SLG
Khoeler’s rule
-80 -40 0 40 80
-1.0
-0.5
0.0
0.5
1.0 H up
H down
M/M
s
H (Oe)
YIG
-80 -40 0 40 80
M x
dM
/dH
H up
H down
H (Oe)
-80 -40 0 40 803.82
3.83
3.84
H up
H down
dR
/dH
(
/Oe
)
H (Oe)
MR measurement with field modulation
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Ferromagnetic resonance in YIG/SLG-9.4 GHz
2.50 2.52 2.54
-0.1
0.0
0.1
FM
R d
P/d
H (
arb
. u
nits)
H (kOe)
YIG/SLG
2.52 2.54 2.56
-0.2
0.0
0.2
FM
R d
P/d
H (
arb
. u
nits)
H (kOe)
YIG bare
2.50 2.52 2.54
-0.1
0.0
0.1
FM
R d
P/d
H (
arb
. u
nits)
H (kOe)
YIG/Pt
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Microwave driving f= 9.4 GHz P= 80 mW
(shorted waveguide)
Spin pumping experiments with YIG/SLG
2.48 2.50 2.52 2.54 2.56-40
-20
0
20
40
0
90º
180º
R=9 k
YIG/SLG
VS
P (V
)
H (kOe)
Sample B
SMR 38
T=300 K
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Frequency dependence of spin-pumping voltage
Spin pumping experiments with YIG/SLG
0.4 0.8 1.2 1.6-40
-20
0
20
40
6 GHz5 GHz4 GHz
VS
P (V
)
Magnetic field H (Oe)
3 GHz
Nonlinear 3-m process inhibits
FMR
Linear variation of with frequency is a signature of the
spin pumping process
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SMR 40
µW power dependence of spin-pumping voltage
Spin pumping experiments with YIG/SLG
2 .5 0
2.52
2.54
2.56
0
10
20
30
40
50
60
70
0
3 0
6 0
9 0
1 2 0
VS
P (
V)
Powe
r (mW)
H (kOe)
Linear variation of with µW power (h2)is another signature of
the spin pumping process
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Interface dependence of spin-pumping voltage
Spin pumping experiments with YIG/SLG
Sample A
2.4 2.5 2.6 2.7-200
-100
0
100
200
= 0
= 90o
= 180o
VS
P (V
)
H (kOe)
YIG/SLG (15.9 k)
Sample C
Smaller linewidth
Smaller
Smaller
Larger linewidth
Larger
Larger
SMR 41 J. B. S. Mendes et al, PRL. 115, 226601 (2015).
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Spin-charge conversion in YIG/SLG
Spin-pumping+ ISHE?
PROBLEMS 1- Fit of this equation to data leads to unphysical parameters. 2- Single layer graphene does not support 3D spin current.
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Mechanism of spin-charge conversion in YIG/SLG
SMR 43
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2D electron gas with spin orbit coupling (SOC)
Rashba energy
SOC
Rashba field
SMR 44
Defines direction of spin quantization
Fermi circles
Spin-momentum locking
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2D electron gas with spin orbit coupling (SOC)
Edelstein effect: Charge current induces spin polarization
Zero net spin polarization Charge current driven by electric field produces
net spin polarization Rojas-Sánchez et al. Otani’s talk on Monday
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2D electron gas with spin orbit coupling (SOC)
Inverse Edelstein effect (IEE)- Onsager reciprocal of EE: Non-equilibrium spin polarization generates a charge current
surface charge current spin current
IEE parameter (dimension of length)
SMR 46 momentum relaxation time
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0- Isolated single-layer graphene has weak SOC
Mechanism of spin-charge conversion in YIG/SLG
1- Contact with YIG enhances SOC of the carriers in SLG
2- SOC and symmetry breaking creates Rashba field
-x
z
y
3- Microwave driving excites FMR which pumps spin current into SLG with polarization in the direction of the field H (y)
SMR 47
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Mechanism of spin-charge conversion in YIG/SLG
4- Non-equilibrium spin polarization creates charge current in the –x direction by IEE, that produces a voltage
SMR 48
-x
z
y
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Spin pumping experiments with YIG/SLG
SMR 49
0 30 60 90 1200
20
40
60
YIG/SLGV
IEE
-pe
ak(
V)
Microwave power (mW)
All quantities are known. So we obtain
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Comparison with other systems
Rashba parameter
The Rashba parameter in YIG/SLG is quite smaller than in other 2D systems.
Not surprising since graphene has very weak SOC.
estimated from measured RN
S-de Haas oscillations
ARPES
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Spin pumping experiment is a powerful tool to
study the conversion of spin currents into charge
current.
SMR 51
Summary
In contact with YIG, graphene has magneto-
resistance typical of magnetic systems and
exhibits enhanced spin-orbit coupling.
Microwave driven FMR in YIG/SLG generates
spin currents in graphene that are converted into
charge currents by the inverse Edelstein effect,
made possible by the Rashba field.
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Thanks to all co-authors
Universidade Federal de Pernambuco Departamento de Física Recife, PE, Brazil Sergio M. Rezende [email protected]
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Thanks to all co-authors
Universidade Federal de Pernambuco Departamento de Física Recife, PE, Brazil Sergio M. Rezende [email protected]
SUPPORT
MANY THANKS FOR YOUR ATTENTION
RECIFE, Pernambuco
Fernando Machado Antonio
Azevedo
Roberto Rodríguez
Joaquim Mendes