status on cmos sensors: 2005 outcome a. besson, on behalf of iphc/ires strasbourg dapnia saclay (m8,...

Status on CMOS Sensors: 2005 outcomeStatus on CMOS Sensors: 2005 outcome

A. Besson, on behalf of

IPHC/IReS Strasbourg DAPNIA Saclay (M8, M15)

LPSC Grenoble (ADC)LPC Clermont (ADC)

Univ. Frankfurt (M11)

• Fast integrated signal processing• Operation @ room Temp.• Thinning• Exploration of fabrication processes • Delayed signal processing • EUDET

SOCLE, Lyon, 12-13 janvier 2006SOCLE, Lyon, 12-13 janvier 2006

Socle, Lyon, 12-13 janvier 2006 Auguste Besson 2

Specific aspects of the CMOS VD Specific aspects of the CMOS VD conceptconcept

• Overall design a priori very similar to TESLA TDR concept (CCD):

• Basic characteristics:

• Main R&D effort

5 cylindrical layers R = 15 – 60 mm surface ~ 3000 cm2

sensor thickness ~ 25-50 m total number of pixels ~ 300 millions Pmean ~≤ 25 W (full detector; 1/20 duty cycle) operated T > 5o ?

pixelsADC, sparsification

support

Layer

Pitch tr.o. Nlad Npix Pinstdiss Pmean

dis

L1 20 m 25 s 20 25M < 100 W

< 5 W

L2 25 m 50 s 26 65M < 130 W

< 7 W

L3 30 m 200 s 24 75M < 100 W

< 5 W

L4 35 m 200 s 32 70M < 110 W

< 6 W

L5 40 m 200 s 40 70M < 125 W

< 6 W

total 142

305M

< 565 W

<29 W

concentrated on achieving fast CMOS sensors: signal processing (sparsification) integrated/chip


Status of the main R&D directionsStatus of the main R&D directions

• Fast read-out in L1/L2 with // processing of columns– Mimosa 8 (with Saclay) characterized in test beam.

– Mimosa 15 (M8 pixel in AMS 0.35 opto) tested in lab.

• Multi-memory architecture (FAPS) in L3-L5– Mimosa 12 tested in lab.

• Radiation hardness (Ionising damage) @ high TºC– Mimosa 11 characterized in test beam.

irradiated with 10 keV X-Rays up to 1 MRad.

• other on going activities– Fabrication processes

– ADC

– Thinning

– Mimostar-2

// read-out architecture// read-out architecture


// read-out architecture: Mimosa 8// read-out architecture: Mimosa 8

• Mimosa 8:• Test in lab: 55Fe results

– Pixel noise ~ 15 e-– CDS ending each col. Pixel-to-pixel dispersion ~ 8 e-

• Test beam results (DESY, 5GeV e-)

– Analog part Charge ~ 450 e- thin epi layer Typical noise ~ 12-15 e- S/N (MPV) ~ 8.5 - 9.5

– Digital part The discriminator works as expected:

efficiency / purity / multiplicity

Next step: ADC, rad. hardness, AMS 0.35 OPTO, speed

- TSMC 0.25 m fab. process with ~ 8 m epitaxial layer- Pixel pitch: 25 m- 3 sub matrices with 3 diode surfaces

- 1.2 x 1.2 μm2

- 1.7 x 1.7 μm2

- 2.4 x 2.4 μm2

- 24 // columns of 128 pixels with 1 discriminator per column- 8 analogic columns


M8 digital : Efficiency and fake M8 digital : Efficiency and fake raterate

Temp. = 20oC; r.o. = 40 MHz

S/N(seed) cut > 5.5 ( discri. threshold =5 mV)Contamination ~< 5 x 10-5

Fake Hit rate / pixel / event

First sensor with integrated signal digitisation !Architecture to be extended with ADC for EUDET telescope

Average hit multiplicity (num of pixels in cluster)

Efficiency (%)


Mimosa 15: translation in AMS 0.35 Mimosa 15: translation in AMS 0.35 optoopto

• TSMC – 0.25 technology < 7 μm epitaxial layer thickness: signal ~ 450 e-

while AMS-0.35 opto techno ~< 12 μm thickness: signal ~ 700-800 e-

Translate Mimosa 8 in AMS-0.35 opto techno.

• First step: Mimosa 15 (fab. in Summer 2005) Pixel with integrated CDS design of Mimosa 8 2 diode sizes: 1.7 x 1.7 μm2 & 2.4 x 2.4 μm2

Lab. tests in December-January


Mimosa 15: tests with Mimosa 15: tests with 5555Fe sourceFe source• 2.4 x 2.4 μm2 diode:

– Gain ~ 50 μV/e-

– Qseed ~ 10% of Qtot (instead of ~ 25%)

– Q3x3 ~ 30% of Qtot (instead of ~ 70%)

– Noise ~< 10 e- ENC Gain & Noise very close to Mimosa 8 ready for full translation of

Mimosa 8 But: less signal charge collected adapt sensing diode size

Calibration peak

Cluster seed

Charge (electrons) Noise (electrons)

Mean ~ 8.3 e-

2.4 x 2.4 μm2

T = 20 oC25 MHz

Multi-memory architectureMulti-memory architecture


Multi-memory architecture (1)Multi-memory architecture (1)

• Mimosa 12 (MOSAIC-1)– Layers 3-5. (& layer 2 ?)– Prototype exploring various types & dimensions of

memory cells AMS-0.35 m techno 4 capacitors/pixel (35 m pitch) 6 sub-arrays with various MOS capa.: 50, 100,

200 fF

Aim for minimal size capacitors providing satisfactory precision, depending on pitch - i.e. layer - (~ 4.6 fF/m2)

Minimal size of capacitor: ~ 50 fF (see also CAP for BELLE)

Cap : 100 fF

Cap : 200 fF

Cap : 50 fF

AC : Poly - Poly

AC : Nwell - Poly

Clamping



• 4 capacitors / pixel– Calibration peak with 55Fe

With sampling and read-out With direct read-out

Calibration peak

312

290

310

274

313

24177,0%

100,0%

88,4%

100,0%

92,9%

100,0%

0 50 100 150 200 250 300 350

Mode sanséchantillonnage

Pixel Standard


Pixel Standard


Pixel Standard

20

0fF

10

0fF

50

fF

UADC

Standard pixelWithout sampling



50 fF

100 fF

200 fF

Vdd_diode

Vdda

VcascAm p

Pow erOnAm pVdda

Read

Vdda

Vac

Sw itchM em

PrechM em

VrefM em

S<0> S<1> S<2> S<3>

tint ~ 230 μs ~ O(1 ms)

Storage duration is critical

Radiation hardnessRadiation hardness


Radiation hardness (1)Radiation hardness (1)

• Mimosa 11: structures– AMS 0.35 μm opto.– 8 different sub-matrices Standard rad tol: thin oxyde and guard ring

Minimize leakage current

• Mimosa 11: test beam – DESY, 5 GeV e-– T = 40 oC ; 700 μs (2.5 MHz)– S/N (MPV) ~ 24– Eff = 99,9 0.05 %

N-Wellp+

SBSF

P-Well

P-epi

n+p+ p+

Standard (A0 sub 2)

N-Well

PartiallyP+ doped

p+

SBSF P+ polyfilling

P+ polyfilling

P-Well

P-epi

n+ n+p+ p+

PartiallyP+ doped

Rad hard (A3 sub 1)


Mimosa 11Mimosa 11

-25 °C 10°C 40 °C

0kR

ad10 keV X-ray Temperature

500k

Rad(with S. Amar-Youcef, C. Müntz, J. Stroth. Frankfurt)(with S. Amar-Youcef, C. Müntz, J. Stroth. Frankfurt)

Integration time (ms)Integration time (ms)

NoiseNoise (e-) (e-)Standard structureStandard structure

Rad hard structureRad hard structure

200 200 μμss

50 100 150 200 250 300

0.2

0.4

0.6

0.8

1

Standard structureStandard structure Rad hard structureRad hard structure

4-pixel cluster: 55Fe spectrum before (red) and after (green) 1 Mrad of X-rays @40°C (200 µs integ. time)

50 100 150 200 250 300

0.2

0.4

0.6

0.8

1

Other on-going activitiesOther on-going activities


Other on-going activitiesOther on-going activities

• Fabrication process exploration– AMS 0.35 μm opto :

Excellent performances (M9, M11, M14) Epi. Layer ~ 12 μm S/N ~ 20-30 (MPV) det ~ 99-99.9 % ; sp = 1.5-2.5 m (20 m pitch) Will be used for EUDET

– TSMC 0.25 μm Typical cluster charge for MIP ~ 450 e- Epi. Layer ~ 6.5 μm

• ADC – LPC-Clermont : full flash ADC proto. fab. in Automn 2005– LPSC-Grenoble : semi-flash ADC proto. subm. in Dec 2005– IPHC/IReS: Wilkinson double ramp (4.5 bits)– DAPNIA & IReS: Succ. approx. 4 & 5 bits.

• Thinning (Mimosa-5)– TRACIT company:

Thinning at 50 μm successful (mech.) electrical tests foreseen On going tests to thin down to 40 μm


MimoSTAR 2MimoSTAR 2

• MimoSTAR-2– AMS 0.35 μm OPTO. 30 μm pitch – 2 matrices 64 x 128, JTAG architecture– Rad. hard structure (based on Mimosa 11)

• To be installed in STAR (2006) Ionising radiation tolerant pixel validated at temperature up to + 40 oC No active cooling needed at int. time ~< O(1 ms)

• Prototype of a EUDET telescope demonstrator chip

Test-beam results (DESY, 5 GeV e-) 2 r.o. time (2 and 10 MHz) 800 μs and 4 ms

(preliminary)(preliminary)

Efficiency vs Temp S/N (MPV) vs Temp


Summary and OutlookSummary and Outlook

• M8: first prototype with discri (TSMC 0.25) Very good m.i.p detection performances implement ADC Signal charge assessed: ~ 450 e- only (AMS 0.35 opto: > 700 e-)

• M15: M8 pixel (with CDS) also validated in AMS 0.35 opto

• M11: rad. tol. pixel @ room To up to 1MRad (if tint ~< 1 ms)

• M12: >~ 50 fF capacitors seem mandatory Not suited to inner most layer but perhaps to 2nd layer

• ADC: study of several alternative architectures @ IReS, LPSC, LPCC, DAPNIA

• Thinning below 50 μm has started

• EUDET: Telescope of 5-7 planes of MIMOSA sensors with digital output and

integrated zero suppression (M8/M15++) MimoSTAR 2 tested with m.i.p.s demonstrator in 2007


Liste des personnelsListe des personnels

IPHC/IReS: J.Baudot, A.B., G. Claus, C. Colledani, (G. Deptuch), M. Deveaux, A.

Dorokhov,

W. Dulinski, M. Goffe, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, Ch. Hu, K.

Jaaskelainen,

M. Pellicioli, O.Robert, A. Shabetai, M. Szelezniak, I. Valin, M. Winter

DAPNIA: M. Besançon, Y. Degerli, N. Fourches, Y. Li, P. Lutz, F. Orsini

LPSC: D.Dzahini, M.Dahoumane, H.Ghazlane, J.Y.Hostachy, E.Lagorio, O.Rossetto,

D.Tourres

LPCC: B.Bohner, R.Cornat, P.Gay, J.Lecoq, L.Royer

(Univ. Frankfurt: S. Amar-Youcef)


Mimosa 11Mimosa 11

-25 °C 10°C 40 °C

0kR

ad20

kRad

10 keV X-ray Temperature

500k

Rad

1000

kRad

(with S. Amar-Youcef, C. Müntz, J. Stroth. Frankfurt)

Integration time (ms)Integration time (ms)

Noise (e-)Noise (e-)

Standard structure

Rad hard structure

200 μs


M8 digital : Hit multiplicityM8 digital : Hit multiplicity



• Diode « self-bias »• Couplage AC 50fF• Ampli. Nmos G~10• 4 capacités de

stockage• Ampli. Source Follower

• Diode « self-bias »• Couplage AC 50fF

– Poly-Poly– Nwell - Poly

• Ampli. Pmos G~7• 4 capacités de

stockage( Cap =200 fF)

• Ampli. Source Follower

• Diode « self-bias »

• Couplage AC 50fF

• Ampli. Nmos G~10

• 2 capacités de stockage « clamping » (CDS intégré)

• Ampli. Source Follower

Cap : 100 fF

Cap : 200 fF

Cap : 50 fF

AC : Poly - Poly

AC : Nwell - Poly

Clamping

status on cmos sensors: 2005 outcome a. besson, on behalf of iphc/ires strasbourg dapnia saclay (m8,...

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