SU-8 Testing (v1b)

Thin SU8 on glass slideTest Soft Bake (SB) and Post Exposure

Bake (PEB)

“Control” Recipe

• Spin Coating: 10s @ 500rpm; 30s @ 2000rpm – (expected thickness?)

• Soft Bake (SB): 60s @ 93°C• Exposure: 8s @ 275 W• PEB: 60s @ 93°C• Develop: 4min in SU8 developer• SU8 developer rinse • IPA rinse/Nitrogen Dry

1st Set of Tests

4 samples; 8 devices/sample4 Wells (W)+4 Blanks (B)/sample• S1: “Control”: Misaligned (how?); All shorted; R(W) ~8.6Ω;

R(B)~10ΩTest Parameters:SB (RT Evap for 30min) and Vary PEB time @ 60°C?• S2: 8min PEB: R(W)=(2.7±0.8)Ω; R(B)=11MΩ±0; C(B) = ?pF• S3: 13min PEB: R(W)=(4.9±?)Ω; R(B=(5.6±7.7)MΩ; C(B)=? ±?• S4: 15min PEB: R(W)=(3.8±1)Ω; R(B)=(11±0)MΩ; C(B)=? ±?• Cracking patterns seen in S2, S3, S4

2nd set of test samples Summary

• 4 samples• 2 “Controls” Test Parameters: 1 min PEB @ 93°C and Vary SB time @ 60°C• SB: 2.5 min• SB: 5 min

2nd Test Results“Control 1” S5

Device Capacitance(pF)

Resistance(Ω) Type

1 -1 29.4 B

2 -1 0.5 W

3 9.38 3.7x10^6 B

4 -1 24 W

5 -1 24 B

6 -1 7 W

7 -1 421 B

8 -1 17 W

Summary: W: 4/4 Shorted B: 3/4 ShortedR(Well): (12.1 ± 10) ΩExcluding #3 R(Blank): (158± 230) ΩBlank Capacitance: 9.38 pF

“Control 2” S6Device Capacitance(p

F)Resistance(Ω) Type

1 Damaged (Too High Voltage)

9.7 4.6x10^6 W

2 9.33 8.3x10^6 B

3 Damaged (Too High Voltage)

9.61 3.04x10^5 W

4 9.4 1.05x10^7 B

5 -1 142 W

6 9.25 1.1x10^7 B

7 -1 46 W

8 10.3 12000 BSummary: W: 2/4 Shorted (2 Damaged by applying too high a voltage) B: 0/4 ShortedR(Well): (94± 68) Ω; C(Blank): (9.57± 0.5) pF

2.5min SB S7Device Capacitance(p

F)Resistance(Ω) Type

1 -1 13.4 W

2 -1 428 B

3 -1 10.8 W

4 -1 294 B

5 -1 3.7 W

6 -1 5.7 B

7 -1 4.1 W

8 -1 11.6 B

Summary: All Shorted R(Blank): 184.8± 211Ω

R(Well): 8± 4.9Ω

5min SB S8Device Capacitance(p

F)Resistance(Ω) Type

1 -1 4.8 W

2 -1 16 B

3 -1 1.9 W

4 -1 44 B

5 -1 4.3 W

6 Error? -1 - B

7* 15.16 1.76 W

8 15.25 0.57x10^6 B

Summary: W: 3/4 Shorted (why not 4/4?) B: 3/4 ShortedR(Blank): (30± 20)Ω (#8 excluded)R(Well): (3.7± 1.6) Ω7*: Remeasured and same effect ignored in the average. Strange that there is a Capacitance and low Resistance, Remeasured C and still high

“Control 2” 20x

“Control 2” 100x

“Control1” 100x

2.5min SB 100x

5min SB 100x

S9

• Back Contact Broken no Resistances• Measured Capacitances• W: 2/4 Shorted B: 1/4 Shorted• Avg Capacitance Well: 19.3± 0.6pF

Device Capacitance(pF)

Resistance(Ω) Type

1 -1 W

2 -1 B

3 12 W

4 19 B

5 -1 W

6 19 B

7 19 W

8 20 B

S10Device Capacitance(p

F)Resistance(Ω) Type

1 -1 4.5 W

2 -1 18 B

3 -1 6.7 W

4 -1 121 B

5 -1 3.9 W

6 -1 127 B

7 -1 5 W

8 -1 118 B

Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Well Resistance: 5.0± 1.2Ω

Avg Blank Resistance: 96± 52Ω Double Exposed (16s)