Supporting Information:

Surface-Anchored Metal-Organic Frameworks as

Versatile Resists for Gas-Assisted E-Beam

Lithography: Fabrication of Sub-10 Nanometer

Structures

Martin Drost§, Fan Tu§, Luisa Berger§, Christian Preischl§, Wencai Zhou†, Hartmut Gliemann†,

Christof Wöll† and Hubertus Marbach*§

§Physikalische Chemie II, FAU Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen, Germany

†Institut für Funktionelle Grenzflächen, Karlsruher Institut für Technologie (KIT), Hermann-

von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

*corresponding author: hubertus.marbach@fau.de

Figure SI1. Models of the two used SURMOFS.

Figure SI2. a)-c) SEM images of high resolution nested L structure also depicted in Figure 5a in

the main paper. The whole structure in b) is framed by the corresponding blow-ups a) and c) as

indicated by the dashed blue lines. d) Line profile extracted from the region marked with a green

rectangle in a). e) Line profile extracted from the region marked with a green rectangle in c). The

corresponding FWHM values were estimated as indicated.

Figure SI3. a) Series of AE spectra in the OKLL region recorded on HKUST-1 while scanning the

surface with different SEM magnifications with EBeam = 15 keV and IBeam = 3 nA; the respective

scan areas are displayed in the upper left. The black spectrum was recorded with a stationary

electron beam having a diameter of ~ 3 nm. b) Plot of the normalized OKLL peak area (after a linear

background subtraction) against the electron area dose, illustrating the decrease of oxygen content

following electron beam irradiation.

Figure SI4. Resolution estimation of SEM instrument on Au on HOPG sample. a) SEM

micrograph of gold “droplets” on HOPG sample acquired with 20 keV primary energy and 200

pA beam current, i.e. the same parameters used in the experiments described in our work. b)

Intensity profile extracted at the position indicated in a). The indicated fitting procedure yields a

resolution of 6.3 ± 0.7 nm according to the applied 20/80 criterion.