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The top documents tagged [d confinement]
Light absorption in Si or Ge nanostructures - GADEST2013
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Accurate Nalysis of MMI Devices With 2-D Confinement---1996
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International Workshop of Computational Electronics Purdue University, 26 th of October 2004 Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium
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Part 3. Semiconductor Materials for Optoelectronic Application The major semiconductor materials used for optoelectronic applications are III-V and II-V
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Eugene Demler Harvard University Strongly correlated many-body systems: from electronic materials to ultracold atoms to photons
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Transport in nanowire MOSFETs: influence of the band-structure M. Bescond IMEP – CNRS – INPG (MINATEC), Grenoble, France Collaborations: N. Cavassilas,
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Eugene Demler Harvard University
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NIST Diffusion Workshop, May 2007 Diffusion along dislocation cores in metals G. P. Purja Pun and Y. Mishin Department of Physics and Astronomy, George
213 views
Measuring correlation functions in interacting systems of cold atoms
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Anatoli Polkovnikov Boston University
61 views
QUANTUM MANY-BODY SYSTEMS OF ULTRACOLD ATOMS Eugene Demler Harvard University Grad students: A. Imambekov (->Rice), Takuya Kitagawa Postdocs: E. Altman
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Eugene Demler Harvard University
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