tl084 amplificador operacional para etapa pre amp amplificador bunker mx2400 1

44
TL081, TL081A, TL081B, TL082, TL082A, TL082B TL084, TL084A, TL084B JFETĆINPUT OPERATIONAL AMPLIFIERS SLOS081G - FEBRUARY 1977 - REVISED SEPTEMBER 2004 1 POST OFFICE BOX 655303 DALLAS, TEXAS 75265 D Low Power Consumption D Wide Common-Mode and Differential Voltage Ranges D Low Input Bias and Offset Currents D Output Short-Circuit Protection D Low Total Harmonic Distortion . . . 0.003% Typ D High Input Impedance . . . JFET-Input Stage D Latch-Up-Free Operation D High Slew Rate . . . 13 V/µs Typ D Common-Mode Input Voltage Range Includes V CC+ description/ordering information The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previously developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient. Offset adjustment and external compensation options are available within the TL08x family. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from - 40°C to 85°C. The Q-suffix devices are characterized for operation from -40°C to 125°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. ORDERING INFORMATION T J V IO max AT 255C PACKAGE ORDERABLE PART NUMBER TOP-SIDE MARKING PDIP (P) Tube of 50 TL081CP TL081CP PDIP (P) Tube of 50 TL082CP TL082CP PDIP (N) Tube of 25 TL084CN TL084CN Tube of 75 TL081CD TL081C Reel of 2500 TL081CDR TL081C SOIC (D) Tube of 75 TL082CD TL082C SOIC (D) Reel of 2500 TL082CDR TL082C 0°C to 70°C 15 mV Tube of 50 TL084CD TL084C 0°C to 70°C 15 mV Reel of 2500 TL084CDR TL084C SOP (PS) Reel of 2000 TL081CPSR T081 SOP (PS) Reel of 2000 TL082CPSR T082 SOP (NS) Reel of 2000 TL084CNSR TL084 Tube of 150 TL082CPW T082 TSSOP (PW) Reel of 2000 TL082CPWR T082 TSSOP (PW) Tube of 90 TL084CPW T084 Reel of 2000 TL084CPWR T084 Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2004, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. On products compliant to MILĆPRFĆ38535, all parameters are tested unless otherwise noted. On all other products, production processing does not necessarily include testing of all parameters.

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Page 1: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Low Power Consumption

Wide Common-Mode and DifferentialVoltage Ranges

Low Input Bias and Offset Currents

Output Short-Circuit Protection

Low Total Harmonic Distortion . . . 0.003% Typ

High Input Impedance . . . JFET-Input Stage

Latch-Up-Free Operation

High Slew Rate . . . 13 V/µs Typ

Common-Mode Input Voltage RangeIncludes V CC+

description/ordering information

The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previouslydeveloped operational amplifier family. Each of these JFET-input operational amplifiers incorporateswell-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices featurehigh slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient. Offsetadjustment and external compensation options are available within the TL08x family.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from −40°C to 85°C. The Q-suffix devices are characterized for operation from −40°C to 125°C.The M-suffix devices are characterized for operation over the full military temperature range of −55°C to 125°C.

ORDERING INFORMATION

TJVIOmaxAT 25C PACKAGE † ORDERABLE

PART NUMBERTOP-SIDEMARKING

PDIP (P)Tube of 50 TL081CP TL081CP

PDIP (P)Tube of 50 TL082CP TL082CP

PDIP (N) Tube of 25 TL084CN TL084CN

Tube of 75 TL081CDTL081C

Reel of 2500 TL081CDRTL081C

SOIC (D)Tube of 75 TL082CD

TL082CSOIC (D)Reel of 2500 TL082CDR

TL082C

0°C to 70°C 15 mVTube of 50 TL084CD

TL084C0°C to 70°C 15 mVReel of 2500 TL084CDR

TL084C

SOP (PS)Reel of 2000 TL081CPSR T081

SOP (PS)Reel of 2000 TL082CPSR T082

SOP (NS) Reel of 2000 TL084CNSR TL084

Tube of 150 TL082CPWT082

TSSOP (PW)Reel of 2000 TL082CPWR

T082

TSSOP (PW)Tube of 90 TL084CPW

T084Reel of 2000 TL084CPWR

T084

† Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available atwww.ti.com/sc/package.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright 2004, Texas Instruments Incorporated ! " #$%! " &$'(#! )!%*)$#!" # ! "&%##!" &% !+% !%" %," "!$%!""!)) -!.* )$#! &#%""/ )%" ! %#%""(. #($)%!%"!/ (( &%!%"*

&)$#!" #&(! ! 0101 (( &%!%" % !%"!%)$(%"" !+%-"% !%)* (( !+% &)$#!" &)$#!&#%""/ )%" ! %#%""(. #($)% !%"!/ (( &%!%"*

Page 2: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description/ordering information (continued)

ORDERING INFORMATION

TJVIOmaxAT 25C PACKAGE † ORDERABLE

PART NUMBERTOP-SIDEMARKING

PDIP (P)Tube of 50 TL081ACP TL081ACP

PDIP (P)Tube of 50 TL082ACP TL082ACP

PDIP (N) Tube of 25 TL084ACN TL084ACN

Tube of 75 TL081ACD081AC

Reel of 2500 TL081ACDR081AC

6 mVSOIC (D)

Tube of 75 TL082ACD082AC

6 mVSOIC (D)

Reel of 2500 TL082ACDR082AC

Tube of 50 TL084ACDTL084AC

Reel of 2500 TL084ACDRTL084AC

0°C to 70°CSOP (PS) Reel of 2000 TL082ACPSR T082A

0°C to 70°CSOP (NS) Reel of 2000 TL084ACNSR TL084A

PDIP (P)Tube of 50 TL081BCP TL081BCP

PDIP (P)Tube of 50 TL082BCP TL082BCP

PDIP (N) Tube of 25 TL084BCN TL084BCN

Tube of 75 TL081BCD081BC

3 mV Reel of 2500 TL081BCDR081BC

3 mV

SOIC (D)Tube of 75 TL082BCD

082BCSOIC (D)Reel of 2500 TL082BCDR

082BC

Tube of 50 TL084BCDTL084BC

Reel of 2500 TL084BCDRTL084BC

PDIP (P)Tube of 50 TL081IP TL081IP

PDIP (P)Tube of 50 TL082IP TL082IP

PDIP (N) Tube of 25 TL084IN TL081IN

Tube of 75 TL081IDTL081I

−40°C to 85°C 6 mVReel of 2500 TL081IDR

TL081I

−40°C to 85°C 6 mV

SOIC (D)Tube of 75 TL082ID

TL082ISOIC (D)Reel of 2500 TL082IDR

TL082I

Tube of 50 TL084IDTL084I

Reel of 2500 TL084IDRTL084I

TSSOP (PW) Reel of 2000 TL082IPWR Z082

−40°C to 125°C 9 mV SOIC (D)Tube of 50 TL084QD

TL084QD−40°C to 125°C 9 mV SOIC (D)Reel of 2500 TL084QDR

TL084QD

9 mVCDIP (J) Tube of 25 TL084MJ TL084MJ

−55°C to 125°C9 mV

LCCC (FK) Reel of 55 TL084FK TL084FK−55°C to 125°C

6 mVCDIP (JG) Tube of 50 TL082MJG TL082MJG

6 mVLCCC (FK) Tube of 55 TL082MFK TL082MFK

† Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available atwww.ti.com/sc/package.

Page 3: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

NC − No internal connection

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN−1IN+

VCC+2IN+2IN−

2OUT

4OUT4IN−4IN+VCC−3IN+3IN−3OUT

TL084, TL084A, TL084BD, J, N, NS, OR PW PACKAGE

(TOP VIEW)

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

4IN+NCVCC−NC3IN+

1IN+NC

VCC+NC

2IN+

TL084M . . . FK PACKAGE(TOP VIEW)

1IN

−1O

UT

NC

3OU

T3I

N −

4OU

T4I

N −

2IN

−2O

UT

NC

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC2OUTNC2IN−NC

NC1IN−

NC1IN+

NC

TL082M . . . FK PACKAGE(TOP VIEW)

NC

1OU

TN

C2I

N +

NC

NC

NC

NC

1

2

3

4

8

7

6

5

OFFSET N1IN−IN+

VCC−

NCVCC+OUTOFFSET N2

TL081, TL081A, TL081BD, P, OR PS PACKAGE

(TOP VIEW)

1

2

3

4

8

7

6

5

1OUT1IN−1IN+

VCC−

VCC+2OUT2IN−2IN+

TL082, TL082A, TL082BD, JG, P, PS, OR PW PACKAGE

(TOP VIEW)

VC

C+

VC

C −

NC − No internal connection NC − No internal connection

symbols

+

+

OFFSET N1

IN+

IN−OUT

IN+

IN−OUT

TL082 (EACH AMPLIFIER)TL084 (EACH AMPLIFIER)

TL081

OFFSET N2

Page 4: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

schematic (each amplifier)

C1

VCC+

IN+

VCC−

OFFSET N1

1080 Ω 1080 Ω

IN−

TL081 Only

64 Ω

128 Ω

64 Ω

OUT

Component values shown are nominal.

OFFSET N2

Page 5: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †

TL08_CTL08_ACTL08_BC

TL08_I TL084Q TL08_M UNIT

Supply voltage, VCC+ (see Note 1) 18 18 18 18 V

Supply voltage VCC− (see Note 1) −18 −18 −18 −18 V

Differential input voltage, VID (see Note 2) ± 30 ± 30 ± 30 ± 30 V

Input voltage, VI (see Notes 1 and 3) ±15 ±15 ±15 ±15 V

Duration of output short circuit (see Note 4) Unlimited Unlimited Unlimited Unlimited

Continuous total power dissipation See Dissipation Rating Table

Operating free-air temperature range, TA 0 to 70 − 40 to 85 − 40 to 125 − 55 to 125 °C

D package (8-pin) 97 97

D package (14-pin) 86 86

N package (14-pin) 76 76

Package thermal impedance, θJA NS package (14-pin) 80°C/W

Package thermal impedance, θJA(see Notes 5 and 6) P package (8-pin) 85 85

°C/W(see Notes 5 and 6)

PS package (8-pin) 95 95

PW package (8-pin) 149

PW package (14-pin) 113 113

Operating virtual junction temperature 150 150 150 150 °C

Case temperature for 60 seconds, TC FK package 260 °C

Lead temperature 1,6 mm (1/16 inch) from casefor 60 seconds

J or JG package 300 °C

Storage temperature range, Tstg − 65 to 150 − 65 to 150 − 65 to 150 − 65 to 150 °C† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC−.2. Differential voltages are at IN+ with respect to IN−.3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.4. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the

dissipation rating is not exceeded.5. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable

ambient temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.6. The package thermal impedance is calculated in accordance with JESD 51-7.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C

POWER RATINGDERATINGFACTOR

DERATEABOVE TA

TA = 70°CPOWER RATING

TA = 85°CPOWER RATING

TA = 125°CPOWER RATING

D (14 pin) 680 mW 7.6 mW/°C 60°C 604 mW 490 mW 186 mW

FK 680 mW 11.0 mW/°C 88°C 680 mW 680 mW 273 mW

J 680 mW 11.0 mW/°C 88°C 680 mW 680 mW 273 mW

JG 680 mW 8.4 mW/°C 69°C 672 mW 546 mW 210 mW

Page 6: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

2222222 32 2 SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

6 POST OFFICE BOX 655303 DALLAS, TEXAS 75265•

elec

tric

al c

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cter

istic

s, V

CC

± =

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V (

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ther

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e no

ted)

PA

RA

ME

TE

RT

ES

T C

ON

DIT

ION

ST A

TL0

81C

TL0

82C

TL0

84C

TL0

81A

CT

L082

AC

TL0

84A

C

TLO

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CT

L082

BC

TL0

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TL0

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TL0

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PM

AX

MIN

TY

PM

AX

MIN

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PM

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MIN

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PM

AX

VIO

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t offs

et v

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O =

0R

S =

50

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153

62

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VV

IOIn

put o

ffset

vol

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VO

= 0

RS

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0 Ω

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1818

18µV

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I IOIn

put o

ffset

cur

rent

‡V

O =

025

°C5

200

510

05

100

510

0pA

I IOIn

put o

ffset

cur

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‡V

O =

0F

ull r

ange

22

210

nA

I IBIn

put b

ias

curr

ent‡

VO

= 0

25°C

3040

030

200

3020

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pAI IB

Inpu

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ull r

ange

107

720

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RC

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°C±

11−

12 to 15±

11−

12 to 15±

11−

12 to 15±

11−

12 to 15V

Max

imum

pea

kR

L =

10

kΩ25

°C±

12±

13.5

±12

±13

.5±

12±

13.5

±12

±13

.5

VO

MM

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um p

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10 k

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olta

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AV

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Larg

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O =

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V,

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25°C

2520

050

200

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050

200

V/m

VA

VD

diffe

rent

ial v

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≥2

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ange

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2525

V/m

V

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33

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put r

esis

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°C10

1210

1210

1210

12Ω

CM

RR

Com

mon

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ject

ion

ratio

VIC

= V

ICR

min

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= 0

, R

= 5

0 25

°C70

8675

8675

8675

86dB

CM

RR

Com

mon

-mod

ere

ject

ion

ratio

VIC

= V

ICR

min

,V

O =

0,

RS

= 5

0 Ω

25°C

7086

7586

7586

7586

dB

k SV

R

Sup

ply-

volta

gere

ject

ion

ratio

VC

C =

±15

V to

±9

V,V

= 0

, R

= 5

0 25

°C70

8680

8680

8680

86dB

k SV

Rre

ject

ion

ratio

(∆V

CC

±/∆

VIO

)

VC

C =

±15

V to

±9

V,V

O =

0,

RS

= 5

0 Ω

25°C

7086

8086

8086

8086

dB

I CC

Sup

ply

curr

ent

(per

am

plifi

er)

VO

= 0

,N

o lo

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°C1.

42.

81.

42.

81.

42.

81.

42.

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A

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ttenu

atio

nA

VD

= 1

0025

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012

012

012

0dB

†A

ll ch

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teris

tics

are

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sure

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der

open

-loop

con

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ns w

ith z

ero

com

mon

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e vo

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, unl

ess

othe

rwis

e sp

ecifi

ed. F

ull r

ange

for

T A is

0°C

to 7

0°C

for

TL0

8_C

, TL0

8_A

C,

TL0

8_B

C a

nd −

40°C

to 8

5°C

for

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‡In

put b

ias

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ents

of a

n F

ET-

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t ope

ratio

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ifier

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n in

Fig

ure

17. P

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ust b

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le.

Page 7: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics, V CC ± = ±15 V (unless otherwise noted)

PARAMETER TEST CONDITIONS† TATL081M, TL082M TL084Q, TL084M

UNITPARAMETER TEST CONDITIONS† TA MIN TYP MAX MIN TYP MAXUNIT

VIO Input offset voltage VO = 0, RS = 50 Ω25°C 3 6 3 9

mVVIO Input offset voltage VO = 0, RS = 50 ΩFull range 9 15

mV

αVIO

Temperature coefficient of input offset voltage

VO = 0 RS = 50 Ω Full range 18 18 µV/°C

IIO Input offset current‡ VO = 025°C 5 100 5 100 pA

IIO Input offset current‡ VO = 0125°C 20 20 nA

IIB Input bias current‡ VO = 025°C 30 200 30 200 pA

IIB Input bias current‡ VO = 0125°C 50 50 nA

VICRCommon-mode inputvoltage range

25°C ±11−12

to15

±11− 12

to15

V

Maximum peakRL = 10 kΩ 25°C ±12 ±13.5 ±12 ±13.5

VOMMaximum peakoutput voltage swing

RL ≥ 10 kΩFull range

±12 ±12 VVOM output voltage swingRL ≥ 2 kΩ

Full range±10 ±12 ±10 ±12

V

AVD

Large-signaldifferential voltage

VO = ±10 V, RL ≥ 2 kΩ 25°C 25 200 25 200V/mVAVD differential voltage

amplification VO = ±10 V, RL ≥ 2 kΩ Full range 15 15V/mV

B1 Unity-gain bandwidth 25°C 3 3 MHz

ri Input resistance 25°C 1012 1012 Ω

CMRRCommon-moderejection ratio

VIC = VICRmin,VO = 0, RS = 50 Ω 25°C 80 86 80 86 dB

kSVR

Supply-voltagerejection ratio(∆VCC± /∆VIO)

VCC = ±15 V to ±9 V,VO = 0, RS = 50 Ω 25°C 80 86 80 86 dB

ICCSupply current(per amplifier)

VO = 0, No load 25°C 1.4 2.8 1.4 2.8 mA

VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 dB

† All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.‡ Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as shown in

Figure 17. Pulse techniques must be used that maintain the junction temperatures as close to the ambient temperature as possible.

operating characteristics, V CC± = ±15 V, TA = 25°C (unless otherwise noted)PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VI = 10 V, RL = 2 kΩ, CL = 100 pF, See Figure 1 8∗ 13

SR Slew rate at unity gain VI = 10 V,T = − 55 C to 125 C,

RL = 2 kΩ, CL = 100 pF,5∗ V/µsSR Slew rate at unity gain VI = 10 V,

TA = − 55°C to 125°C, See Figure 15∗ V/µs

tr Rise timeVI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1

0.05 µs

Overshoot factorVI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1

20 %

VnEquivalent input noisevoltage RS = 20 Ω

f = 1 kHz 18 nV/√HzVn

Equivalent input noisevoltage RS = 20 Ω

f = 10 Hz to 10 kHz 4 µV

InEquivalent input noisecurrent RS = 20 Ω, f = 1 kHz 0.01 pA/√Hz

THD Total harmonic distortion VIrms = 6 V,f = 1 kHz

AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ, 0.003 %

∗On products compliant to MIL-PRF-38535, this parameter is not production tested.

Page 8: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

operating characteristics, V CC± = ±15 V, TA = 25°CPARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SR Slew rate at unity gain VI = 10 V, RL = 2 kΩ, CL = 100 pF, See Figure 1 8 13 V/µs

tr Rise timeVI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1

0.05 µs

Overshoot factorVI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1

20 %

Vn Equivalent input noise voltage RS = 20 Ωf = 1 kHz 18 nV/√Hz

Vn Equivalent input noise voltage RS = 20 Ωf = 10 Hz to 10 kHz 4 µV

In Equivalent input noise current RS = 20 Ω, f = 1 kHz 0.01 pA/√Hz

THD Total harmonic distortion VIrms = 6 V,f = 1 kHz

AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ, 0.003 %

PARAMETER MEASUREMENT INFORMATION

Figure 1

VI

CL = 100 pF RL = 2 kΩ

+

OUT

Figure 2

VI

10 kΩ

1 kΩ

RL CL = 100 pF

+

OUT

Figure 3

100 kΩ

C2

C1

N1

500 pF

+

OUT

IN−

Figure 4

TL081

N2

N1

100 kΩ

1.5 kΩ

VCC−

+

OUT

IN−

IN+

Page 9: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

vs Frequency 5, 6, 7

VOM Maximum peak output voltage

vs Frequencyvs Free-air temperature

5, 6, 78

VOM Maximum peak output voltagevs Free-air temperaturevs Load resistancevs Supply voltage

89

10vs Load resistancevs Supply voltage

910

Large-signal differential voltage amplificationvs Free-air temperature 11

AVDLarge-signal differential voltage amplification

vs Free-air temperaturevs Frequency

1112AVD

Differential voltage amplification vs Frequency with feed-forward compensation 13

PD Total power dissipation vs Free-air temperature 14

ICC Supply currentvs Free-air temperature 15

ICC Supply currentvs Free-air temperaturevs Supply voltage

1516

IIB Input bias current vs Free-air temperature 17

Large-signal pulse response vs Time 18

VO Output voltage vs Elapsed time 19

CMRR Common-mode rejection ratio vs Free-air temperature 20

Vn Equivalent input noise voltage vs Frequency 21

THD Total harmonic distortion vs Frequency 22

Figure 5

±15

±12.5

±10

±7.5

±5

±2.5

0

f − Frequency − Hz

1 k 10 k 100 k 1 M 10 M

RL = 10 kΩTA = 25°CSee Figure 2

VCC± = ±15 V

VCC± = ±10 V

VCC± = ±5 V

− M

axim

um P

eak

Out

put V

olta

ge −

V

MAXIMUM PEAK OUTPUT VOLTAGEvs

FREQUENCY

VO

M

100

Figure 6

MAXIMUM PEAK OUTPUT VOLTAGEvs

FREQUENCY

VCC± = ±5 V

VCC± = ±10 V

VCC± = ±15 V

RL = 2 kΩTA = 25°C

±15

±12.5

±10

±7.5

±5

±2.5

0

f − Frequency − Hz

100 1 k 10 k 1 M 10 M

See Figure 2

100 k

− M

axim

um P

eak

Out

put V

olta

ge −

VV

OM

Page 10: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS †

Figure 7

0

±2.5

±5

±7.5

±10

±12.5

±15

10 k 40 k 100 k 400 k 1 M 4 M 10 M

VCC± = ±15 VRL = 2 kΩSee Figure 2

TA = −55°C

TA = 25°C

TA = 125°C

f − Frequency − Hz

MAXIMUM PEAK OUTPUT VOLTAGEvs

FREQUENCY

− M

axim

um P

eak

Out

put V

olta

ge −

VV

OM

Figure 8

±12.5

±10

±7.5

±5

±2.5

MAXIMUM PEAK OUTPUT VOLTAGEvs

FREE-AIR TEMPERATURE

− 75 − 50 − 25 0 25 50 75 100 125

±15

0

ÎÎÎÎÎÎÎÎ

RL = 10 k

ÎÎÎÎRL = 2 k

VCC± = ±15 VSee Figure 2

− M

axim

um P

eak

Out

put V

olta

ge −

VV

OM

TA − Free-Air Temperature − °C

Figure 9

0.10

RL − Load Resistance − k Ω10

±15

±2.5

±5

±7.5

±10

±12.5

VCC± = ±15 VTA = 25°CSee Figure 2

0.2 0.4 0.7 1 2 4 7

MAXIMUM PEAK OUTPUT VOLTAGEvs

LOAD RESISTANCE

− M

axim

um P

eak

Out

put V

olta

ge −

VV

OM

Figure 10

00

|VCC± | − Supply Voltage − V

16

±15

2 4 6 8 10 12 14

±2.5

±5

±7.5

±10

±12.5

RL = 10 kΩTA = 25°C

MAXIMUM PEAK OUTPUT VOLTAGEvs

SUPPLY VOLTAGE

− M

axim

um P

eak

Out

put V

olta

ge −

VV

OM

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

Page 11: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS †

700

70

7

−751

TA − Free-Air Temperature − °C125

1000

−50 −25 0 25 50 75 100

2

4

10

20

40

100

200

400

VCC± = ±15 VVO = ±10 VRL = 2 kΩ

LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION

vsFREE-AIR TEMPERATURE

− L

arge

-Sig

nal D

iffer

entia

lA

VD

Vol

tage

Am

plifi

catio

n −

V/m

V

Figure 11

180°

135°

90 °

45 °

0 °

Phase Shift(right scale)

TA = 25°CRL = 10 kΩVCC± = ±5 V to ±15 V

Differential VoltageAmplification

(left scale)

105

104

103

102

101

1 M100 k10 k1 k10010

106

10 M

f − Frequency − Hz

11

LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION

vsFREQUENCY

− L

arge

-Sig

nal D

iffer

entia

lA

VD

Vol

tage

Am

plifi

catio

n −

V/m

V

Pha

se S

hift

Figure 12

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

Page 12: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS †

Figure 13

See Figure 3TA = 25°CC2 = 3 pF

VCC± = ±15 V

105

104

103

102

10

1 M100 k10 k1 k

106

10 M

f − Frequency With Feed-Forward Compensation − Hz

1100

DIFFERENTIAL VOLTAGE AMPLIFICATIONvs

FREQUENCY WITH FEED-FORWARD COMPENSATION

− D

iffer

entia

l Vol

tage

Am

plifi

catio

n −

V/m

VA

VD

Figure 14

−750

− To

tal P

ower

Dis

sipa

tion

− m

W

TA − Free-Air Temperature − °C125

250

−50 −25 0 25 50 75 100

25

50

75

100

125

150

175

200

225VCC± = ±15 VNo SignalNo Load

TL084, TL085

TL082, TL083

TL081

TOTAL POWER DISSIPATIONvs

FREE-AIR TEMPERATURE

PD

Figure 15

− S

uppl

y C

urre

nt −

mA

−750

TA − Free-Air Temperature − °C125

2.0

−50 −25 0 25 50 75 100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8VCC± = ±15 VNo SignalNo Load

SUPPLY CURRENT PER AMPLIFIERvs

FREE-AIR TEMPERATURE

I CC

±

Figure 16

00

|VCC± | − Supply Voltage − V

16

2.0

2 4 6 8 10 12 14

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8 TA = 25°CNo SignalNo Load

SUPPLY CURRENTvs

SUPPLY VOLTAGE

− S

uppl

y C

urre

nt −

mA

I CC

±

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

Page 13: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS †

Figure 17

− 500.01

− In

put B

ias

Cur

rent

− n

A

TA − Free-Air Temperature − °C125

100

− 25 0 25 50 75 100

0.1

1

10

VCC± = ± 15 V

INPUT BIAS CURRENTvs

FREE-AIR TEMPERATURE

I IB

Figure 18

VCC± = ±15 VRL = 2 k ΩCL = 100 pFTA = 25°C

Output

4

2

0

− 2

− 4

32.521.510.50

6

3.5

t − Time − µs

Inpu

t and

Out

put V

olta

ges

− V

− 6

VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE

Input

Figure 19

− 4

− O

utpu

t Vol

tage

− m

V

t − Elapsed Time − µs

1.2

28

0 0.2 0.4 0.6 0.8 1.0

0

4

8

12

16

20

24

OUTPUT VOLTAGEvs

ELAPSED TIME

VO

VCC± = ±15 VRL = 2 k ΩCL = 100 pFTA = 25°CSee Figure 1

Figure 20

RL = 10 kΩVCC± = ±15 V

88

87

86

85

84

1007550250− 25− 50

89

125

TA − Free-Air Temperature − °C

CM

RR

− C

omm

on-M

ode

Rej

ectio

n R

atio

− d

B

83− 75

COMMON-MODE REJECTION RATIOvs

FREE-AIR TEMPERATURE

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

Page 14: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS †

Figure 21

100

− E

quilv

alen

t Inp

ut N

oise

Vol

tage

f − Frequency − Hz

100 k

50

10

20

30

40

VCC± = ±15 VAVD = 10RS = 20 ΩTA = 25°C

40 100 400 1 k 4 k 10 k 40 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

Vn

nV/

Hz

Figure 22

0.001

TH

D −

Tot

al H

arm

onic

Dis

tort

ion

− %

1VCC± = ±15 VAVD = 1VI(RMS) = 6 VTA = 25°C

40 k10 k4 k1 k400 100 k

f − Frequency − Hz

10

0.004

0.01

0.04

0.1

0.4

TOTAL HARMONIC DISTORTIONvs

FREQUENCY

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

APPLICATION INFORMATION

Figure 23

+

−15 V

15 VOutput

1 kΩ

9.1 kΩ3.3 kΩ

CF = 3.3 µF

RF = 100 kΩ

3.3 kΩ

TL081

f =2π RF CF

1

Figure 24

+

R1

C1 C2R3

C3 VCC−

VCC+

TL081OutputInput

R2

R1 = R2 = 2(R3) = 1.5 MΩ

fo =2π R1 C1

1= 1 kHz

C1 = C2 = = 110 pFC32

Page 15: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

Input

+

+

TL084 Output C

Output BTL084

+

VCC+

Output ATL084

+VCC+

TL084

VCC+100 kΩ

100 µF

1 µF

1 MΩ

100 kΩ

100 kΩ 100 kΩ

VCC+

VCC+

Figure 25. Audio-Distribution Amplifier

+

+

88.4 kΩ

18 pF

VCC+

VCC−

18 pF

18 pF

88.4 kΩ

88.4 kΩ

1N4148

1N4148

VCC−

VCC+

1 kΩ

− 15 V

6 cos ωt

15 V18 kΩ

(see Note A)

1 kΩ

6 sin ωt

1/2TL082 1/2

TL082

18 kΩ (see Note A)

NOTE A: These resistor values may be adjusted for a symmetrical output.

Figure 26. 100-KHz Quadrature Oscillator

Page 16: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004

16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

Output BOutput A

+

1.5 kΩ VCC−

43 kΩ

220 pF

43 kΩ

VCC+

30 kΩ

VCC+43 kΩ

VCC−

+

16 kΩ

43 kΩ

Input220 pF 220 pF

16 kΩ

+

VCC−

VCC+

30 kΩ

VCC+

43 kΩ

220 pF

43 kΩ

VCC−

+

1.5 kΩ

1/4TL084

2 kHz/divSecond-Order Bandpass Filterfo = 100 kHz, Q = 30, GAIN = 4

2 kHz/divCascaded Bandpass Filter

fo = 100 kHz, Q = 69, GAIN = 16

Output A

Outpu tB

1/4TL084

1/4TL084

1/4TL084

Figure 27. Positive-Feedback Bandpass Filter

Page 17: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

PACKAGE OPTION ADDENDUM

www.ti.com 27-Apr-2012

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

5962-9851501Q2A ACTIVE LCCC FK 20 1 TBD Call TI Call TI

5962-9851501QPA ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type

5962-9851503Q2A ACTIVE LCCC FK 20 1 TBD Call TI Call TI

5962-9851503QCA ACTIVE CDIP J 14 1 TBD Call TI Call TI

TL081ACD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081ACDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081ACDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081ACDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081ACDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081ACDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081ACJG OBSOLETE CDIP JG 8 TBD Call TI Call TI

TL081ACP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL081ACPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL081BCD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081BCDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081BCDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081BCDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081BCDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081BCDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081BCP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL081BCPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

Page 18: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

PACKAGE OPTION ADDENDUM

www.ti.com 27-Apr-2012

Addendum-Page 2

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL081CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL081CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL081CPSR ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CPSRE4 ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CPSRG4 ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081CPWLE OBSOLETE TSSOP PW 8 TBD Call TI Call TI

TL081ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081IDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081IDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081IDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL081IP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL081IPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

Page 19: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

PACKAGE OPTION ADDENDUM

www.ti.com 27-Apr-2012

Addendum-Page 3

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL081MFKB OBSOLETE LCCC FK 20 TBD Call TI Call TI

TL081MJG OBSOLETE CDIP JG 8 TBD Call TI Call TI

TL081MJGB OBSOLETE CDIP JG 8 TBD Call TI Call TI

TL082ACD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082ACPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082ACPSR ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACPSRE4 ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082ACPSRG4 ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082BCD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082BCDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082BCDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082BCDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082BCDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082BCDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

Page 20: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

PACKAGE OPTION ADDENDUM

www.ti.com 27-Apr-2012

Addendum-Page 4

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL082BCP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082BCPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CJG OBSOLETE CDIP JG 8 TBD Call TI Call TI

TL082CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082CPSR ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPSRG4 ACTIVE SO PS 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPW ACTIVE TSSOP PW 8 150 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPWE4 ACTIVE TSSOP PW 8 150 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPWG4 ACTIVE TSSOP PW 8 150 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPWLE OBSOLETE TSSOP PW 8 TBD Call TI Call TI

TL082CPWR ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPWRE4 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082CPWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

Page 21: Tl084 Amplificador Operacional Para Etapa Pre Amp Amplificador Bunker Mx2400 1

PACKAGE OPTION ADDENDUM

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Addendum-Page 5

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL082ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IDE4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IDRE4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IJG OBSOLETE CDIP JG 8 TBD Call TI Call TI

TL082IP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082IPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL082IPWR ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IPWRE4 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082IPWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL082MFK OBSOLETE LCCC FK 20 TBD Call TI Call TI

TL082MFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

TL082MJG ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type

TL082MJGB ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type

TL084ACD ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACDE4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACDG4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACDR ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACDRE4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

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Addendum-Page 6

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL084ACDRG4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084ACNE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084ACNSR ACTIVE SO NS 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACNSRE4 ACTIVE SO NS 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ACNSRG4 ACTIVE SO NS 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCD ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCDE4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCDG4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCDR ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCDRE4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCDRG4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084BCN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084BCNE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084CD ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CDE4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CDG4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CDR ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CDRE4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

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Addendum-Page 7

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL084CDRG4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CJ OBSOLETE CDIP J 14 TBD Call TI Call TI

TL084CN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084CNE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084CNSLE OBSOLETE SO NS 14 TBD Call TI Call TI

TL084CNSR ACTIVE SO NS 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CNSRG4 ACTIVE SO NS 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CPW ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CPWE4 ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CPWG4 ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CPWLE OBSOLETE TSSOP PW 14 TBD Call TI Call TI

TL084CPWR ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CPWRE4 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084CPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084ID ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084IDE4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084IDG4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084IDR ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084IDRE4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084IDRG4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

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PACKAGE OPTION ADDENDUM

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Addendum-Page 8

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TL084IJ OBSOLETE CDIP J 14 TBD Call TI Call TI

TL084IN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084INE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TL084MFK ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

TL084MFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

TL084MJ ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type

TL084MJB ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type

TL084QD ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084QDG4 ACTIVE SOIC D 14 50 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084QDR ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TL084QDRG4 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

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PACKAGE OPTION ADDENDUM

www.ti.com 27-Apr-2012

Addendum-Page 9

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TL082, TL082M, TL084, TL084M :

• Catalog: TL082, TL084

• Automotive: TL082-Q1, TL082-Q1

• Military: TL082M, TL084M

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

• Military - QML certified for Military and Defense Applications

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TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TL081ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL081BCDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL081CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL081CPSR SO PS 8 2000 330.0 16.4 8.2 6.6 2.5 12.0 16.0 Q1

TL081IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082ACPSR SO PS 8 2000 330.0 16.4 8.2 6.6 2.5 12.0 16.0 Q1

TL082BCDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082CPSR SO PS 8 2000 330.0 16.4 8.2 6.6 2.5 12.0 16.0 Q1

TL082CPWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1

TL082IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TL082IPWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1

TL084ACDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TL084ACDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TL084ACNSR SO NS 14 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 28-Nov-2012

Pack Materials-Page 1

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Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TL084BCDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TL084CDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TL084CNSR SO NS 14 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1

TL084CPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TL084IDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TL084QDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TL081ACDR SOIC D 8 2500 340.5 338.1 20.6

TL081BCDR SOIC D 8 2500 340.5 338.1 20.6

TL081CDR SOIC D 8 2500 340.5 338.1 20.6

TL081CPSR SO PS 8 2000 367.0 367.0 38.0

TL081IDR SOIC D 8 2500 340.5 338.1 20.6

TL082ACDR SOIC D 8 2500 340.5 338.1 20.6

TL082ACDR SOIC D 8 2500 367.0 367.0 35.0

TL082ACPSR SO PS 8 2000 367.0 367.0 38.0

TL082BCDR SOIC D 8 2500 340.5 338.1 20.6

TL082CDR SOIC D 8 2500 367.0 367.0 35.0

TL082CPSR SO PS 8 2000 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 28-Nov-2012

Pack Materials-Page 2

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Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TL082CPWR TSSOP PW 8 2000 367.0 367.0 35.0

TL082IDR SOIC D 8 2500 367.0 367.0 35.0

TL082IDR SOIC D 8 2500 340.5 338.1 20.6

TL082IPWR TSSOP PW 8 2000 367.0 367.0 35.0

TL084ACDR SOIC D 14 2500 333.2 345.9 28.6

TL084ACDR SOIC D 14 2500 367.0 367.0 38.0

TL084ACNSR SO NS 14 2000 367.0 367.0 38.0

TL084BCDR SOIC D 14 2500 333.2 345.9 28.6

TL084CDR SOIC D 14 2500 333.2 345.9 28.6

TL084CNSR SO NS 14 2000 367.0 367.0 38.0

TL084CPWR TSSOP PW 14 2000 367.0 367.0 35.0

TL084IDR SOIC D 14 2500 333.2 345.9 28.6

TL084QDR SOIC D 14 2500 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 28-Nov-2012

Pack Materials-Page 3

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MECHANICAL DATA

MCER001A – JANUARY 1995 – REVISED JANUARY 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE

0.310 (7,87)0.290 (7,37)

0.014 (0,36)0.008 (0,20)

Seating Plane

4040107/C 08/96

5

40.065 (1,65)0.045 (1,14)

8

1

0.020 (0,51) MIN

0.400 (10,16)0.355 (9,00)

0.015 (0,38)0.023 (0,58)

0.063 (1,60)0.015 (0,38)

0.200 (5,08) MAX

0.130 (3,30) MIN

0.245 (6,22)0.280 (7,11)

0.100 (2,54)

0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).B. This drawing is subject to change without notice.C. This package can be hermetically sealed with a ceramic lid using glass frit.D. Index point is provided on cap for terminal identification.E. Falls within MIL STD 1835 GDIP1-T8

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IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherchanges to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latestissue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current andcomplete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of salesupplied at the time of order acknowledgment.

TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s termsand conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessaryto support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarilyperformed.

TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provideadequate design and operating safeguards.

TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI components or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.

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