transistors at work
TRANSCRIPT
Transistors at Work
What a transistor is
How it works
How it’s put togetherSpecial Thanks to Elena Sipe, Patrick Kimball, and Steve Behbahany
Image courtesy http://www.yuanlei.com/hardware/specs1/i850e_chips.jpg
What is a Transistor?
The main components of microprocessors.
Microprocessors are vital to many of the
products we use in every day life:
Televisions
Cars
MOSFET Transistor, courtesy of
http://info.tuwien.ac.at/theochem/si-srtio3_interface/mosfet.jpg
http://vista.pca.org/yos/Porsche-911-Turbo.jpg
Radios
home appliances
computers
http://www.sonyericsson.com/cws/products/
mobilephones/overview/x1?cc=us&lc=en
How does it work?
Transistors are miniature electronic switches.
Transistors have two operating positions
On
Off
Binary functionality of transistors enables the processing of information in a computer or other system.
http://intel.com/education/transworks/flat1.htm
Image courtesy of http://www.anz.com/aus/promo/Switching/images/LightSwitch.jpg
Conductors, Insulators, and Semi-
conductors
Conductors - allow electrical current to flow
Insulators - do not allow electrical current to flow
Pure silicon, the base material of most transistors, is a Semiconductor - its conductivity can be modulated by the introduction of impurities.
http://intel.com/education/transworks/flat5.htm
http://www.intel.com/education/transworks/flat5.htm
The On/Off States of a Transistor
Step A
Transistors consist of
three terminals:
Source
Gate
Drain. http://intel.com/education/transworks/flat7.htm
http://www.intel.com/education/transworks/flat7.htm
Step B
n-type transistor - source and drain are negatively charged and sit on a positively charged well of p-silicon. http://intel.com/education/transworks/flat7.htm
A very small quantity of boron or gallium, which have one less valence electron than silicon, is implanted into the silicon base (creating p-type silicon).
http://www.intel.com/education/transworks/flat7.htm
Periodic table: http://www.dayah.com/periodic/Images/periodic%20table.png
A trace amount of phosphorous or arsenic, which contain one more valence electron than silicon, is implanted in the source and drain areas (creating n-type silicon).
Step C
When positive voltage
is applied to the gate,
positively charged
holes are repelled
from the gate which
forms an electron
channel between the
source and the drain,
allowing a clear path
for electricity to flow.
http://intel.com/education/transworks/flat7.htm
http://www.intel.com/education/transworks/flat7.htm
Step D
Electrons are able to
flow through the
transistor. This
completes the circuit;
the transistor is now
“on”.http://intel.com/education/transworks/flat7.htm
http://www.intel.com/education/transworks/flat7.htm
Step E
If the voltage at the
gate is removed,
holes are not repelled
from the area
between the source
and drain. The
pathway is broken
and the transistor is
turned off. http://intel.com/education/transworks/flat7.htm
http://www.intel.com/education/transworks/flat7.htm
How a Transistor Handles Information
The transistor's "on" state
is represented by a 1,
and the "off" state is
represented by a 0.
Specific sequences and
patterns of 1's and 0's
generated by multiple
transistors can represent
letters, numbers, colors,
and graphics. This is
known as binary notation.
http://www.intel.com/education/transworks/flat3.htm
http://intel.com/education/transworks/flat3.htm
On a wafer, billions of transistors are housed on a single square chip. One malfunctioning transistor could cause a chip to short-circuit, ruining the chip. Thus, the process of creating each microscopic transistor must be very precise.
Wafer image: http://upload.wikimedia.org/wikipedia/fr/thumb/2/2b/PICT0214.JPG/300px-PICT0214.JPG
Making Microprocessors
Size of Transistors
Scaling of successive generations of MOSFETs into the nanoscale regime (from Intel).
One chip is made of millions or billions of transistors
packed into a length and width of less than half an
inch. Channel lengths in MOSFET transistors are
less than a tenth of a micrometer. Human hair is
approximately 100 micrometers in diameter.
Transistor: MOS
We will illustrate the process sequence of
creating a transistor with a Metal Oxide
Semiconductor(MOS) transistor.
p-Si
Insulatorconductor
n-Si
Source DrainGate
n-Si
½” to ¾“
Image courtesy: Pro. Milo Koretsky
Chemical Engineering Department at OSU
IC Manufacturing ProcessIC Processing consists of selectively
adding material (Conductor, insulator,
semiconductor) to, removing it from or
modifying it
Wafers
Deposition /
OxidationEtching / CMP
Loop
Photo/
Pattern
Transfer Cle
an
Cle
an Ion Implant /
Anneal
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
(Note that these steps are not all the steps to create
a transistor. Some steps are skipped. This is purely to
show the various stages in the loop to create a transistor.)
Making a Transistor: Starting Silicon Wafer
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Si
Wafers
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Clean substrate
Si
Polished Silicon Wafer
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Chemical Vapor Deposition: Si3N4
Si
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Spin Coating of Photoresist
Si
mask
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Develop Photoresist
Si
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Plasma Etch Si3N4
Si
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Plasma Etch: Strip Photoresist
Si
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Ion Implantation
Si
IONS IONSIONS
1.75 u
1/50th of a human hair
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
Anneal
Si
HEAT HEATHEAT
Activate (& diffuse) the dopant
• Clean before anneal
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Dep
os
ition
/
Oxid
atio
n
Lo
op
Ph
oto
/
Patte
rn
Tra
ns
fer
Etc
hin
g /
CM
P
Clean
Ion
Imp
lan
t /
An
ne
al
The Final Steps…a completed transistor
Gate: +
e- e-
Source - Drain: +
Si
Graphics copy-write Pro. Milo Koretsky
Chemical Engineering Department at OSU
Economy of Transistors
~$300 /chip
X ~200 chips/wafer
X 200 wafers/furnace
load =
$12 Million
per furnace
loadhttp://www.dvhardware.net/article16696.html
http://www.nitride.co.jp/english
/products/wafer.html
Additional helpful websites
http://micro.magnet.fsu.edu/electromag/jav
a/transistor/
http://jas.eng.buffalo.edu/education/fab/N
MOS/nmos.html