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www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.
DatasheetSCS205KG SiC Schottky Barrier Diode
*1 Tc=150°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
3) High-speed switching possible
Outline
Inner circuit
Packaging specifications
TO-220AC
2) Reduced temperature dependence
1200V
5A
VR
IFQC
Features
17nC
1) Shorter recovery time
A
W
Symbol
Construction
Silicon carbide epitaxial planer type
Parameter
V
V
A
A
A
VRM
Tube
-
Type
Packaging
Reel size (mm)
C
SCS205KG
Basic ordering unit (pcs)
Tape width (mm) -
50
Marking
Packing code
UnitValue
Repetitive peak forward current
Total power disspation
Junction temperature
VR
IF
IFSM
IFRM
PD
1200
1200
5*1
25*5
88*6
23*2
Absolute maximum ratings (Tj = 25°C)
Surge no repetitive forward current
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Tj
Tstg
175
55 to 175Range of storage temperature
87*3 A
18*4
°C
°C
(1) Cathode(2) Cathode(3) Anode
(1)
(2) (3)
(3)(2)
(1)
1/4 2017.06 - Rev.C
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DatasheetSCS205KG
-
IF=5A,Tj=25°C
Symbol
-
VF
VR=1200V,Tj=150°C -
Typ.Unit
Max.Min.
-
Values
1.6
Electrical characteristics (Tj = 25°C)
1200VDC IR =0.1mA
Parameter Conditions
DC blocking voltage
A
VR=1200V,Tj=25°C
V
5
1.9IF=5A,Tj=175°C
VR=1200V,Tj=175°C
V
100-
-
-
1.4
-
-
Switching time tc - 15 -VR=800V,di/dt=500A/s ns
VR=800V,f=1MHz -
VR=800V,di/dt=500A/s
-
17 --
pF21
Forward voltage
Reverse current
Total capacitance
Total capacitive charge nC
-65
IR
C
Qc
270 -
V
A
pFVR=1V,f=1MHz
40 - A
IF=5A,Tj=150°C - 1.8 - V
Thermal characteristics
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
Thermal resistance Rth(j-c) - - 1.5 1.7 °C/W
2/4 2017.06 - Rev.C
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DatasheetSCS205KG
Electrical characteristic curves
0
1
2
3
4
5
6
7
8
0.0 0.5 1.0 1.5 2.0 2.5
Ta=125ºC
Pulsed
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
Fig.1 VF - IF Characteristics
For
war
d C
urre
nt :
I F[A
]
Forward Voltage : VF [V]
Fig.2 VF - IF Characteristics
For
war
d C
urre
nt :
I F[A
]
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
Rev
erse
Cur
rent
: I
R[
A]
Reverse Voltage : VR [V]
Fig.4 VR-Ct Characteristics
Cap
acita
nce
Bet
wee
n T
erm
inal
s : C
t [p
F]
Reverse Voltage : VR [V]
0.001
0.01
0.1
1
10
100
0 200 400 600 800 1,000 1,200
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
10
100
1,000
0.01 0.1 1 10 100 1000
Ta=25ºCf=1MHz
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
Ta=125ºC
Pulsed
Ta=175ºC
Ta=75ºC Ta=25ºC
Ta= 25ºC
3/4 2017.06 - Rev.C
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DatasheetSCS205KG
Electrical characteristic curves
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Ta=25ºCSingle Pulse
0
20
40
60
80
100
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
Duty=0.1
Duty=0.2
Duty=0.5
Duty=0.8D.C.
0
10
20
30
40
0 2 4 6 8 10
Duty=0.1
Duty=0.2Duty=0.5
Duty=0.8
D.C.
Fig.5 Thermal Resistance vs. Pulse Width
The
rmal
Res
ista
nce
: R
th(j
-c)
[ºC
/W]
Pulse Width : Pw [s]
Fig.6 Power Dissipation
Pow
er D
issi
patio
n [W
]
Case Temperature : Tc [ºC]
Fig.7 Ip-Tc Derating Curve
Pea
k F
orw
ard
Cur
rent
: I P
[A]
Case Temperature : Tc [ºC]
Fig.8 Io-Pf Characteristics
Pow
er D
issi
patio
n [W
]
Average Rectified Forward Current : Io [A]
4/4 2017.06 - Rev.C
R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.
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DatasheetDatasheet
Notice – WE Rev.001© 2015 ROHM Co., Ltd. All rights reserved.
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ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.
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