v to-220acp (1) r i 6a q · 2017. 8. 17. · packaging specifications type packaging tube...
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DatasheetSCS306AP SiC Schottky Barrier Diode
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
Junction temperature Tj 175 °C
Range of storage temperature Tstg 55 to 175 °C
1≦PW≦10ms, Tj=150°C 8 A2s
Total power disspation PD 46 W
i2t value1≦PW≦10ms, Tj=25°C
∫i2dt11 A2s
A
Repetitive peak forward current IFRM 28 A
Surge non-repetitive forwardcurrent
PW=10ms sinusoidal, Tj=25°C
IFSM
47 A
PW=10ms sinusoidal, Tj=150°C 40 A
PW=10s square, Tj=25°C 170
Reverse voltage (DC) VR 650 V
Continuous forward current (Tc= 135°C) IF 6 A
Reverse voltage (repetitive peak) VRM 650 V
Packing code C9
Marking SCS306AP
Absolute maximum ratings (Tj = 25°C)
Parameter Symbol Value Unit
Packaging specifications
Type
Packaging Tube
Construction Reel size (mm) -
Silicon carbide epitaxial planar type Tape width (mm) -
Basic ordering unit (pcs) 50
Features Inner circuit
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Outline
VR 650V TO-220ACP
IF 6A
QC 19nC
(1) Cathode(2) Cathode(3) Anode
(1)
(2) (3)
(3)(2)
(1)
*1
*2
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DatasheetSCS306AP
3.09E-02
K/W
Cth1 1.81E-04
Ws/KRth2 3.09E-01 Cth2 6.65E-04
Rth3 1.83E+00 Cth3 1.58E-03
Rth1
°C/W
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Thermal resistance Rth(j-c) - - 2.2 3.2
Thermal characteristics
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
ns
Non-repetetiveAvaranche Energy
Eava L=1mH - 71 - mJ
Switching time tC VR=400V, di/dt=350A/s - 15 -
Reverse current IR
27 - pF
Total capacitive charge QC VR=400V, di/dt=350A/s - 19 - nC
Total capacitance CVR=1V, f=1MHz - 300 - pF
VR=650V, f=1MHz -
A
VR=650V, Tj=150°C - 1.2 120 A
VR=650V, Tj=175°C - 3.6
VR=650V, Tj=25°C - 0.018 30
- A
V
IF=6A, Tj=150°C - 1.44 1.71 V
IF=6A, Tj=175°C - 1.50 - V
Electrical characteristics (Tj = 25°C)
Parameter Symbol ConditionsValues
Forward voltage VF
IF=6A, Tj=25°C - 1.35 1.50
UnitMin. Typ. Max.
DC blocking voltage VDC IR =50A 650 - - V
PD
Tj Tc
Ta
Rth,nRth1
Cth1 Cth2 Cth,n
2/5 2017.07 - Rev.D
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DatasheetSCS306AP
Electrical characteristic curves
Fig.3 VR - IR Characteristics
0.001
0.01
0.1
1
10
0 200 400 600
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
Pulsed
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0
1
2
3
4
5
6
7
8
9
0.0 0.5 1.0 1.5 2.0 2.5
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºCPulsed
1
10
100
1,000
0.01 0.1 1 10 100 1000
Ta=25ºCf=1MHz
Fig.1 VF - IF Characteristics
For
war
d C
urre
nt :
I F[A
]
Forward Voltage : VF [V]
Fig.2 VF - IF Characteristics
For
war
d C
urre
nt :
I F[A
]
Forward Voltage : VF [V]
Rev
erse
Cur
rent
: I
R[
A]
Reverse Voltage : VR [V]
Fig.4 VR-Ct Characteristics
Cap
acita
nce
Bet
wee
n T
erm
inal
s : C
t[p
F]
Reverse Voltage : VR [V]
3/5 2017.07 - Rev.D
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DatasheetSCS306AP
Electrical characteristic curves
0.01
0.1
1
10
1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1
Ta=25ºCSingle Pulse
0
5
10
15
20
25
30
35
40
45
50
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
25 50 75 100 125 150 175
Duty=0.1
Duty=0.2
Duty=0.5
Duty=0.8D.C.
Fig.5 Typical Transient Thermal Resistance vs. Pulse Width
Tra
nsie
nt T
herm
al R
esis
tanc
e : R
th(j
-c)
[ºC
/W]
Pulse Width : PW [s]
Fig.6 Power Dissipation
Pow
er D
issi
patio
n [W
]
Case Temperature : Tc [ºC]
Pea
k F
orw
ard
Cur
rent
: I P
[A]
Case Temperature : Tc [ºC]
Peak
For
war
d Cu
rren
t : I P
[A]
Case Temperature : Tc [ºC]
0
10
20
30
40
50
60
70
80
25 50 75 100 125 150 175
Duty=0.1
Duty=0.2
Duty=0.5
Duty=0.8
D.C.
Fig.7*3 Maximum peak forward current derating curve IP - Tc
Fig.8*4 Typical peak forward current derating curve IP - Tc (Not guaranteed)
*3 Based on max Vf, max Rth(j-c)Valid for switching of above 10kHz, excluding D.C. curve.
*4 Based on typ Vf, typ Rth(j-c)Typical value, not guaranteedValid for switching of above 10kHz, excluding D.C. curve
4/5 2017.07 - Rev.D
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DatasheetSCS306AP
Electrical characteristic curves
Symplified forward characteristic model
b2 1.28E-06 /°C2
-1.10E-03 V/°C
b0 5.87E-02
b1 1.24E-04 /°C
Symbol Typical Value Unit
a0 9.66E-01 V
a1
10
100
1000
1.E-5 1.E-4 1.E-3 1.E-2
Ta=25ºCSingle Pulse
0
1
2
3
4
5
6
7
8
0 200 400 600
Fig.9 Surge non-repetitive forward current vs. Pulse width (Sinusoidal waveform)
Sur
ge n
on-r
epet
itive
for
war
d cu
rren
t : I F
SM
[A]
Pulse Width : PW [s]
Fig.10 Typical capacitance store energy
Cap
acita
nce
stor
ed e
nerg
y : E
C[
J]
Reverse Voltage : VR [V]
For
war
d C
urre
nt :
I F
Forward Voltage : VF
Fig.11 Equivalent forward current curve
VF = Vth + Rdiff IF
Vth (Tj) = a0 + a1 Tj
Rdiff (Tj) = b0 + b1 Tj + b2 Tj2
Vth1/Rdiff
Tj in ºC; -55 ºC < Tj <175 ºC ; IF <12A
5/5 2017.07 - Rev.D
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