versatile 200 mm rtp/rtcvd system temperature range: room ... · purge gas line with needle valve...

Non-contractual document, specifications subject to change without notice

ANNEALSYS AS-Master

Versatile 200 mm RTP/RTCVD system Temperature range: Room temperature up to 1500°C

Pressure range: Atmosphere down to 10-6 Torr

AS-Master


ANNEALSYS AS-Master

Applications: RTP & RTCVD

• Implant annealing • Contact annealing (III-V and SiC) • Silicon carbonization • Rapid Thermal Oxidation (RTO) • Rapid Thermal Nitridation (RTN) • Diffusion from spin-on dopants • Densification and crystallization • Selenization • Rapid Thermal CVD (Si poly, SiO2, SiNx) • Etc.


ANNEALSYS AS-Master

Substrate types

• Silicon wafers • Compound semiconductor wafers • GaN/Sapphire wafers for LEDs • Silicon carbide wafers • Poly silicon wafers for solar cells • Glass substrates • Metals • Etc…


ANNEALSYS AS-Master

Key Features

• Multi-zone infrared halogen lamp furnace with close loop air cooling • Stainless steel cold wall chamber technology • Fast digital PID temperature controller • Thermocouple and pyrometer control • Atmospheric and vacuum process capability • Purge gas line with needle valve • Up to 6 process gas lines with digital MFC • PC control with Ethernet communication for fast data logging • Optional turbo pump and pressure control • Manual or cassette to cassette loading

Stand alone system for substrates up to 200 mm


ANNEALSYS AS-Master

Multi configuration system to meet customer requirements

• Several furnace configurations: • S20: standard, 6 zones, up to 1150°C • S20 HT: high temperature, 6 zones, up to 1500°C • 2000: enhanced uniformity, 10 zones, up to 1250°C • 2000 HT: can run in S20 HT or 2000 configuration

• Multi temperature port locations to meet different substrate sizes • Optional pumping chamber for low vacuum processes • Gas panel for annealing to CVD applications • Optional pressure control • Optional turbo pumping • Cassette to cassette version


ANNEALSYS AS-Master

Infrared furnace configurations

Model Number of heating zones

Max. Temperature

Max. ramp rate (200 mm wafer)

up to 1100°C

Power

S20 6 1150°C 100°C/s 75 kW 2000 10 1250°C 150°C/s 86 kW S20 HT 6 1500°C(1) 200°C/s 102 kW 2000 HT(2) 10 (2000 mode)

6 (HT mode) 1250°C 1500°C

150°C/s 200°C/s

102 kW

(1) The maximum temperature depends on substrate and process conditions. (2) The AS-Master 2000HT can switch from 2000 to S20HT mode. The switch from one configuration to the other is software controlled.


ANNEALSYS AS-Master

Reactor design

Water-cooled bedplate

Wafer

Pyrometer

Vacuum

Quartz pins

Halogen lamps

Quartz window GAS INLET

Thermocouple Thermocouple

Pyrometer position at edge viewport


ANNEALSYS AS-Master

Easy and fast installation of quartz pins for different substrate sizes

Wafer

Standard quartz pins installation: Easy substrate size change for 4’, 6’, 200 and 240 mm

Outer quarts pins

Holding quarts pins

Quartz pins for intermediate substrate sizes: 5’ or others

Bedplate

Quartz pins for small substrate and substrate with different shapes:

Drawing pins shape quartz pins Can be installed at any location

Substrate

Bedplate

Thermocouple

6’ 4’

Bedplate

Wafer


ANNEALSYS AS-Master

Furnace control

Infrared halogen tubular lamp furnace with fan cooling: Low noise level No compressed air consumption

Power blocks are power control (not voltage control) Power to lamps is independent of

Lamp filament resistivity Lamp aging

=> Better process reproducibility

Multi zone control: Excellent temperature uniformity


ANNEALSYS AS-Master

Multi-zone furnace

Zone 1

Zone 4

Zone 2

Zone 3

Zone 5

Zone

6

Zone

9

Zone

7

Zone

8

Zone

10

Lamp distribution 2000 and 2000 HT versions


ANNEALSYS AS-Master

Zone 1

Zone 4

Zone 2 Zone 3

Zone

5

Zone

6

Lamp distribution S20 and S20 HT versions

Multi-zone furnace


ANNEALSYS AS-Master

Process chamber

Lamp air cooling system

Lamp furnace Lamp furnace

FAN

Rear view

Heat exchanger

Water

Heat exchanger

Hot air

Cold air

Process chamber

Side view

Close loop circuit for lamp cooling – No heat released to the cleanroom


ANNEALSYS AS-Master

Temperature control

Thermocouple temperature control: • K type thermocouple: Room temperature to 1000°C • 5 thermocouple feedthroughs

Pyrometer temperature control: • High temperature range pyrometer: 400°C to 1500°C • Low temperature range pyrometer: 150°C to 1100°C • 4 possible pyrometer locations for different substrate sizes • Optional second pyrometer

Fast digital temperature controller: • Overshoot-less capability • Several sets of PID parameters for different temperature levels • Autotuning procedure • Possibility to associate a PID parameter table to each recipe


ANNEALSYS AS-Master

Additional pumping chamber

Turbo pump

Auxiliary pumping chamber

Gate valve

High vacuum conductance between process chamber and turbo pump


ANNEALSYS AS-Master

Option fast cooling system


Process heating position: wafer held by quartz pins

Wafer

Bellows

Pyrometer Piston

Quartz pin


ANNEALSYS AS-Master

Fast cooling position: wafer in contact with water-cooled bedplate

Wafer

Quartz pin

Very fast cooling rate up to 100 ºC/s down to room temperature

Option fast cooling system


Bellows

Pyrometer Piston


ANNEALSYS AS-Master

Temperature control quartz window

Pump Heat exchanger

Water in Water out

RTCVD: temperature controlled window to limit deposition on window


ANNEALSYS AS-Master

Substrate rotation RTCVD : substrate rotation for enhanced deposition uniformity

Wafer

Vacuum feedthrough Motor

Rotating bedplate

Bearings Atmosphere

Vacuum


ANNEALSYS AS-Master

Standard Vacuum and Gas configuration

MFC

Purge Gas 1 Gas 2 Gas 3

Vacuum gauge

Vacuum valve

To Vacuum pump

Exhaust Check valve

Opt

iona

l MFC

MFC

Gas 4 Gas 5 M

FC

MFC


ANNEALSYS AS-Master

Gas panel

The gas panel is housed in an independent cabinet on the system backside


ANNEALSYS AS-Master

Configuration with turbo pump and CVD gas panel

Capacitance Manometer

10 Torr

Vacuum valve

Exhaust

Pressure switch

Purge Gas 1

MFC

MFC

Gas 2

MFC

Gas 3

MFC

NO Valve

NC Valve Gas 5

Primary vacuum pump

Throttle valve

Pressure controller

MFC

MFC

Gas 6 Gas 4

Process chamber

Forepump Turbo Pump

Gate valve


ANNEALSYS AS-Master

Easy substrate loading with full wafer access

Manual loading version

Pneumatic jack

Pneumatic jack

CHAMBER CLOSED

CHAMBER OPEN

wafer

Thermocouples

From development to production : manual loading to cassette to cassette loading


ANNEALSYS AS-Master

Chamber loading

ROBOT

CHAMBER CLOSED

CHAMBER OPEN

ROBOT

Cassette to cassette loading version

From development to production : manual loading to cassette to cassette loading


ANNEALSYS AS-Master

Cluster tool version

Cluster

ROBOT Pyrometer

Cluster

ROBOT

Pyrometer

Loading mode

Process mode


ANNEALSYS AS-Master

Cassette

Cooling station

Furnace

Robot

AS-Master

Top view: Single cassette configuration for wafer annealing

Custom configuration depending on customer application

Cassette to cassette version


ANNEALSYS AS-Master

Multi cassette configuration for multi wafer annealing with susceptors Compound semiconductors and sapphire applications, LED production

Loading station

Cassette to cassette version Custom configuration depending on customer application


ANNEALSYS AS-Master

Access modes: • Operator, Engineer, Administrator

Recipe mode: • Up to 100 steps per recipe • TC and pyrometer calibration associated to recipe • PID table associated to recipe

Process: • Full data logging • All data and table saved in process historical • Automatic autotuning (PID calculation) • Automatic pyrometer calibration

Manual mode: • Manual control of heating, vacuum and gas

Configuration mode: • Mass flow ranges, calibration tables, alarm values…

Same software for all Annealsys systems = robustness and reliability

PC Control Software


ANNEALSYS AS-Master PC Control Software: Real time display and data collection


ANNEALSYS AS-Master PC Control Software: Diagnostic capabilities


ANNEALSYS AS-Master

Easy access for service

Control module Reactor module

Pneumatic lift of upper flange for quartz window access

Lamp furnace opening for halogen lamp access


ANNEALSYS AS-Master

1400

1104

Control Module

Process chamber and air cooling system

700

800

Maintenance access area


600

Computer Optional Transformer

Optional Vacuum Pump

Gas

cab

inet

Manual loading version layout


ANNEALSYS AS-Master

Cassette to cassette version layout

1400

1104

Control Module

Process chamber and air cooling system

700

800



600

Computer Optional

Transformer

Optional Vacuum Pump

Gas

cab

inet

Robot Handling

unit

620


ANNEALSYS AS-Master

Temperature uniformity on 200-mm wafer measured with a wafer probe Temperature uniformity: 0.14% @1023°C (AS-Master 2000)

Thermocouple R Θ T (°C) TC1 5 0° 1025 TC2 50 0° 1021 TC3 50 315° 1024

TC4 50 270° 1023 TC5 90 0° 1023 TC6 50 315° 1030 TC7 90 270° 1023

TC2 TC5 TC1

TC4

TC7

TC6

TC 3 45°

Θ

Wafer probe configuration

Process results


ANNEALSYS AS-Master

Temperature uniformity on 6-inch wafer measured by RTO: ±3°C @1000°C AS-Master 2000

y = 0.5881x + 901.01R2 = 0.9997

975

980

985

990

995

1000

1005

1010

1015

1020

1025

0 50 100 150 200 250

Oxide thickness

Tem

pera

ture

Oxydation kinetic

Process Wafersize

Temp. Oxide thickness (nm) Calculated temperatures (°C) Uniformity(Tmax-Tmin)/2

Uniformity3 Sigma

°C Min Max Center 3 Sigma Min Max Center 3 Sigma +/- °C +/- °COX-0980 6" 980 126.69 169.00 134 10.53 976 1000 980 6.19 12.44 3.10OX-1000 6" 1000 163.00 182.86 169 9.62 997 1009 1000 5.66 5.84 2.83OX-1020 6" 1020 184.70 223.10 202 12.80 1010 1032 1020 7.53 11.29 3.76

Process results


ANNEALSYS AS-Master

Specifications AS-Master

Maximum substrate diameter 200 mm Chamber dimensions 300 mm diameter x 30 mm Number of lamps 20 to 32 (depending on version) Lamp cooling Fan with heat exchanger and closed loop air circuit Temperature range RT to 1500°C Ramp rate 0.1°C to 200°C/s (depends on furnace version) Temperature control Fast digital PID controller Thermocouple 2 K type Low / high temperature pyrometer range 150°C to 1100°C / 400°C to 1500°C Pyrometer ports 4 Gas injection Under quartz window Purge gas line Standard Process gas line with mass flow cont. Up to 6 Pumping port Backside of chamber Vacuum valve and vacuum gauge Standard


ANNEALSYS AS-Master

Facility requirements AS-Master

Voltage 3x400V+N Optional transformer for other voltage

Power 75 kW (Standard version) 86 kW (10 zones version)

102 kW (High temperature version)

Water flow 30 l/mn (Standard version) 40 l/mn(10 zones version)

50 l/mn (High temperature version)

Compressed air 6 bars / 0.1 m3/h

Process gases 2 bars


ANNEALSYS AS-Master

Dimensions and Weight

AS-Master Manual loading AS-Master + Robot module Width 1,100 mm 1,100 mm Height 2,500 mm 2,500 mm Depth 1,550 mm 2,170 mm

Weight 800 kg 1,050 kg


ANNEALSYS AS-Master

Customers

China: Chinese Academy of Science France: CNRS LAAS Germany: Robert Bosch Japan: AIST Osaka Prefecture University Showa Denko Luxembourg: CRP Gabriel Lippmann (RTCVD) Norway: SINTEF Russia: Technoinfo Spain: CSIC IMB Barcelona (RTCVD) Taiwan: Promos Thailand: TMEC


ANNEALSYS AS-Master

ANNEALSYS

Bâtiment T2, PIT de la Pompignane Rue de la Vieille Poste

34055 MONTPELLIER Cedex 1 France

Tel: +33 (0) 467 20 23 63

Email: [email protected]

www.annealsys.com

Thank you for your attention

versatile 200 mm rtp/rtcvd system temperature range: room ... · purge gas line with needle valve...

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