wafer polish/grinder challenges
TRANSCRIPT
1July 16th, 2008
ACCRETECHACCRETECHEquipmentEquipment
Challenges for Challenges for 3D Interconnect3D Interconnect
Kazuo Kobayashi / Marketing Dept.
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ACCRETECH CHALLENGE
• Handling System ( WSS / Tape )• Thinning ( Grinding WPH)• Thinning ( C M Polishing / Etching)• Cleaning ( particle / contamination)• Chemistry( Environment )• Low temperature process • Dicing (Diamond Blade >>> Z axis control)• Dicing (Ablation Laser for device cutting)• Dicing (Laser Scribing for precise energy control) • Stress relief. ( back-side + die-side )• DAF ( coating / printing / cutting )
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2008: Set for further growth and increased production capacity:
+ 15,900m2 ground, +50% vs. today
Hachioji PlantBldg. for PG, Dicer & CMPCompleted in March 2005
ACCT Tower
Building #1 / #2
(Prober)
Building #4(Win-Win)
Parts Control
Building #3(Dicer, PG,
CMP)
New Land for
next Factory
Challenging Site
4
Polish Grinder Family
2000 2001 2002 2003 2004 2005 2006
PG300Grinder + CMP stress release
PG300RMGrinder + CMP stress releaseRemover/Mounter IntegratedDAF capability included
PG300PRMGrinder + CMP stress releasePlasma for special applicationsRemover/Mounter IntegratedDAF capability included
PG300DRMGrinder + CMP stress releaseDAF300 module integrated forbottom die DAF lamination
Remover/Mounter Integrated
Growing Inline DemandGrowing Inline DemandBG+ PolishPG+ RM(Remove Mount)PG+ Plasma+RMPG+DAF+RM
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Blade Dicer family
A-WD-10B A-WD-100A A-WD-110A A-WD-250S
A-WD-200T
ML200
A-WD-300T
A-WD-300T
with Load Port
A-WD-300TXPS280
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Laser Dicer familyML200
ML300RME
PG300+ML300+RM
DC tape expander
Laser scribing
300mm/sec
IR picture
MAHOH LASER
MAHO :magic in Japanese
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Thin Wafers
TransparencyTransparency
5 micron thick wafer
Rolled by device and BG tape & pattern.
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HANDLING
Hard wf. Support System
12 micron
⇒ COST⇒ Accuracy (TTV, Uniformity)⇒ Thermal Expansion Rate⇒ Chemical
6 micron
Frame Handling System
Challenge
more > less← →
⇒ Accuracy (TTV, Uniformity)⇒ Universal chuck ⇒ Chemical
Tape Adhesive glass wafer
Si
13
Wafer Edge WSS
50um
Wafer support System
50um
Adhesive
No support Crack
Heat expansion Chemical resistance
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TTV : 1 > 0.75 > 0.5 micron
基準面からの平坦化に接着剤や平面加工を採用
+ 5 μ x 10 dice. = +50 μ
Or adhesive for thickness adjustment
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300mm 5μ(1μ means)
Edge induced yield issue = Cut---Grind---Melt
Thickness <5 μ
Radial grinding mark is affective from chuck grinding condition.
Thinner wafer is sensitive to temperature change.
8 /12 inch vacuum area divider is high density Al2O3 ceramic
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HANDLING
Universal Size Chuck on Grinding
6 micron
Vacuum Chuck Transfer
Thermal Expansion rate
12 micron
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Non-Contact Gauge
Air Inlet
Air Nozzle
• Post Process
• Pre-Process
• In-Process
• Response
• Accuracy
• Maintenance
Wet WaferIR Laser
Air Blow
Laser
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DC frame chuck for thinning
10μ20μ
Vacuum Clamping Chuck
WaferBG tape
Frame
Cup type Grinding wheel
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Dry Etching after GAS =grind after Sawing=Grind After Mahoh dicing
Before Thinning
After GAS(Dry Etching)
GAS + Plasma
Sawing/Dicing first
Still stressed
GAS process GAM process
Damage less
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DAF cutting (after GAS vs GAM)
Die moves after “Grind After Sawing” or “Dice Before Grinding”DAF must be cut by laser after measuring the die to die center position.This takes time and street width expands 3 times.
DieDie
DieDie
Die
Die
DieLaser
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FRAME PROBER
porous ceramic chuck
Frame chucked
Correct die position
X列ごとのXズレ
-50
0
50
100
150
200
Y=109
Y=110
Y=111
Y=112
Y=113
Y=114
Y=115
Y=116
Y=117
Y=118
Y=119
Y=120
Y=121
Y=122
Y=123
Y=124
Y=125
Y=126
Y=127
Y=128
Y=129
Y=130
Y=131
Y=132
Y=133
Y=134
Y=135
Y=136
Y=137
Y=138
Y=139
Y=140
Y=141
Y=142
Y=143
Y=144
Y=145
Y=146
Y=147
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
Y列 ごとの Yズ レ量
-50
- 4 0
- 3 0
- 2 0
- 1 0
0
1 0
2 0
3 0
4 0
X=106
X=108
X=110
X=112
X=114
X=116
X=118
X=120
X=122
X=124
X=126
X=128
X=130
X=132
X=134
X=136
X=138
X=140
X=142
X=144
X=146
X=148
1 09
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
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DAF coating systemDAF coating system
Y-Axis
X-Axis
θAxisA-Loader
B-Loader
Plasma Electrode
Coating Stage
Baking Stage
Inspection StageH4 Handler
PG Side RM Side
H4 Handler
Z-Axis
Masking the dicing street on coatingor inc-jet print for thinner DAF.
Screen printing
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“GAM system ”
MAHO + PG300RM + Expansion + (DB)*-**
4 3
1 2
0 25
*-**
UV
RM300E
PG300
ML300
Convertible to Blade dicing
Flexible for Die Bonders
Connectable to Frame prober,
Die bonder
connectable for Plasma.
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PG+Mahoh (GAM) Integration System
Integration system for thin wafer
Mahoh Laser
Transfer Arm
Transfer Arm
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PG and Mahoh Integration System
Mahoh laser scribing
Plasma Etching
Grinding + Polishing 300mm wafer
Removing / Mounting
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Wafer Thinning SystemWafer Thinning SystemTurn Key Solution = Handling & Cleaning
UV Curing UnitCoin Stack OptionOff-line Cassette Option
Post Process Gauge
Protection TapeLaminating
WaferThinning
StressRelief
Die Attach FilmLaminating
Dicing Tape Mounting
Protection Tape Peeling
Dicing Die Bonding
Film Frame Probing
Laser Dicer Integration
ACC300
Dicing Tape Expanding
For Stacked Dicing Tape with DAF Layer
Angle CutLamination for Bump Wafer
Wet PolishingDry PolishingWet EtchingDry Etching
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Challenge for future Integration
*-**
4 3
1 2
0 25
*-**
0 25
*-**
4 3
1 2
0 25
*-**
0 25
PG300/BG300
UV
RM300
EXPANDER
ACC300
UV
ML300 Laser
Plasma
Etcher
WBC=DAF
BG+Polish
United multi laser source
Edge grinding
ScribingTrigger
&Gettering Device grooving
Laser + Blade
Pressure controlFor bumped wafers
CleaningCleaning
Plasma etching
Sivia
DAF cuttinglaser
BG tape Frame handlingChuck table handling