wafer polish/grinder challenges

33
1 July 16 th , 2008 ACCRETECH ACCRETECH Equipment Equipment Challenges for Challenges for 3D Interconnect 3D Interconnect Kazuo Kobayashi / Marketing Dept.

Upload: trinhnhan

Post on 18-Jan-2017

227 views

Category:

Documents


2 download

TRANSCRIPT

1July 16th, 2008

ACCRETECHACCRETECHEquipmentEquipment

Challenges for Challenges for 3D Interconnect3D Interconnect

Kazuo Kobayashi / Marketing Dept.

2

ACCRETECH CHALLENGE

• Handling System ( WSS / Tape )• Thinning ( Grinding WPH)• Thinning ( C M Polishing / Etching)• Cleaning ( particle / contamination)• Chemistry( Environment )• Low temperature process • Dicing (Diamond Blade >>> Z axis control)• Dicing (Ablation Laser for device cutting)• Dicing (Laser Scribing for precise energy control) • Stress relief. ( back-side + die-side )• DAF ( coating / printing / cutting )

3

2008: Set for further growth and increased production capacity:

+ 15,900m2 ground, +50% vs. today

Hachioji PlantBldg. for PG, Dicer & CMPCompleted in March 2005

ACCT Tower

Building #1 / #2

(Prober)

Building #4(Win-Win)

Parts Control

Building #3(Dicer, PG,

CMP)

New Land for

next Factory

Challenging Site

4

Polish Grinder Family

2000 2001 2002 2003 2004 2005 2006

PG300Grinder + CMP stress release

PG300RMGrinder + CMP stress releaseRemover/Mounter IntegratedDAF capability included

PG300PRMGrinder + CMP stress releasePlasma for special applicationsRemover/Mounter IntegratedDAF capability included

PG300DRMGrinder + CMP stress releaseDAF300 module integrated forbottom die DAF lamination

Remover/Mounter Integrated

Growing Inline DemandGrowing Inline DemandBG+ PolishPG+ RM(Remove Mount)PG+ Plasma+RMPG+DAF+RM

5

Blade Dicer family

A-WD-10B A-WD-100A A-WD-110A A-WD-250S

A-WD-200T

ML200

A-WD-300T

A-WD-300T

with Load Port

A-WD-300TXPS280

6

Laser Dicer familyML200

ML300RME

PG300+ML300+RM

DC tape expander

Laser scribing

300mm/sec

IR picture

MAHOH LASER

MAHO :magic in Japanese

7

Prober family

8

Thin Wafers

9

Rolled up after Grinding

45um 50um 55um

10

Thin Wafers

TransparencyTransparency

5 micron thick wafer

Rolled by device and BG tape & pattern.

11

HANDLING

Hard wf. Support System

12 micron

⇒ COST⇒ Accuracy (TTV, Uniformity)⇒ Thermal Expansion Rate⇒ Chemical

6 micron

Frame Handling System

Challenge

more > less← →

⇒ Accuracy (TTV, Uniformity)⇒ Universal chuck ⇒ Chemical

Tape Adhesive glass wafer

Si

12

Wafer Edge

360um

180um

50um25um

WET Etched wafer

13

Wafer Edge WSS

50um

Wafer support System

50um

Adhesive

No support Crack

Heat expansion Chemical resistance

14

TTV : 1 > 0.75 > 0.5 micron

基準面からの平坦化に接着剤や平面加工を採用

+ 5 μ x 10 dice. = +50 μ

Or adhesive for thickness adjustment

15

Die Strength ( after grind )

Weak

STRONG

Grinding mark

Die Die

Grinding mark

16

300mm 5μ(1μ means)

Edge induced yield issue = Cut---Grind---Melt

Thickness <5 μ

Radial grinding mark is affective from chuck grinding condition.

Thinner wafer is sensitive to temperature change.

8 /12 inch vacuum area divider is high density Al2O3 ceramic

17

HANDLING

Universal Size Chuck on Grinding

6 micron

Vacuum Chuck Transfer

Thermal Expansion rate

12 micron

18

Non-Contact Gauge

Air Inlet

Air Nozzle

• Post Process

• Pre-Process

• In-Process

• Response

• Accuracy

• Maintenance

Wet WaferIR Laser

Air Blow

Laser

19

DC frame chuck for thinning

10μ20μ

Vacuum Clamping Chuck

WaferBG tape

Frame

Cup type Grinding wheel

20

Via/Plug Exposure

21

Etching after laser dicing

22

Dry Etching after GAS =grind after Sawing=Grind After Mahoh dicing

Before Thinning

After GAS(Dry Etching)

GAS + Plasma

Sawing/Dicing first

Still stressed

GAS process GAM process

Damage less

23

DAF cutting (after GAS vs GAM)

Die moves after “Grind After Sawing” or “Dice Before Grinding”DAF must be cut by laser after measuring the die to die center position.This takes time and street width expands 3 times.

DieDie

DieDie

Die

Die

DieLaser

24

FRAME PROBER

porous ceramic chuck

Frame chucked

Correct die position

X列ごとのXズレ

-50

0

50

100

150

200

Y=109

Y=110

Y=111

Y=112

Y=113

Y=114

Y=115

Y=116

Y=117

Y=118

Y=119

Y=120

Y=121

Y=122

Y=123

Y=124

Y=125

Y=126

Y=127

Y=128

Y=129

Y=130

Y=131

Y=132

Y=133

Y=134

Y=135

Y=136

Y=137

Y=138

Y=139

Y=140

Y=141

Y=142

Y=143

Y=144

Y=145

Y=146

Y=147

106

107

108

109

110

111

112

113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

128

129

130

131

132

133

134

135

136

137

138

139

Y列 ごとの Yズ レ量

-50

- 4 0

- 3 0

- 2 0

- 1 0

0

1 0

2 0

3 0

4 0

X=106

X=108

X=110

X=112

X=114

X=116

X=118

X=120

X=122

X=124

X=126

X=128

X=130

X=132

X=134

X=136

X=138

X=140

X=142

X=144

X=146

X=148

1 09

110

111

112

113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

128

129

130

131

25

DAF coating systemDAF coating system

Y-Axis

X-Axis

θAxisA-Loader

B-Loader

Plasma Electrode

Coating Stage

Baking Stage

Inspection StageH4 Handler

PG Side RM Side

H4 Handler

Z-Axis

Masking the dicing street on coatingor inc-jet print for thinner DAF.

Screen printing

26

“GAM system ”

MAHO + PG300RM + Expansion + (DB)*-**

4 3

1 2

0 25

*-**

UV

RM300E

PG300

ML300

Convertible to Blade dicing

Flexible for Die Bonders

Connectable to Frame prober,

Die bonder

connectable for Plasma.

27

PG+Mahoh (GAM) Integration System

Integration system for thin wafer

Mahoh Laser

Transfer Arm

Transfer Arm

28

PG and Mahoh Integration System

Mahoh laser scribing

Plasma Etching

Grinding + Polishing 300mm wafer

Removing / Mounting

29

Thin Die

Accretech : North Hall 5571.

30

Wafer Thinning SystemWafer Thinning SystemTurn Key Solution = Handling & Cleaning

UV Curing UnitCoin Stack OptionOff-line Cassette Option

Post Process Gauge

Protection TapeLaminating

WaferThinning

StressRelief

Die Attach FilmLaminating

Dicing Tape Mounting

Protection Tape Peeling

Dicing Die Bonding

Film Frame Probing

Laser Dicer Integration

ACC300

Dicing Tape Expanding

For Stacked Dicing Tape with DAF Layer

Angle CutLamination for Bump Wafer

Wet PolishingDry PolishingWet EtchingDry Etching

31

INLINE TO INTEGRATION

INLINE

INTEGRATION

Distance and handover times

32

Challenge for future Integration

*-**

4 3

1 2

0 25

*-**

0 25

*-**

4 3

1 2

0 25

*-**

0 25

PG300/BG300

UV

RM300

EXPANDER

ACC300

UV

ML300 Laser

Plasma

Etcher

WBC=DAF

BG+Polish

United multi laser source

Edge grinding

ScribingTrigger

&Gettering Device grooving

Laser + Blade

Pressure controlFor bumped wafers

CleaningCleaning

Plasma etching

Sivia

DAF cuttinglaser

BG tape Frame handlingChuck table handling

33

Thank you !MOSCONE CENTER

North Hall 5571. Come and Feelthe die strength!